페이지 28 - GeneSiC Semiconductor 제품

부품 번호	제조업체	설명	패키지	재고
MBRH240150	GeneSiC Semiconductor	DIODE SCHOTTKY 150V 240A D67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 240A Voltage - Forward (Vf) (Max) @ If: 880mV @ 240A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 150V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C	패키지: D-67	재고7,104
MURH7020R	GeneSiC Semiconductor	DIODE FAST 200V 70A D-67 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1V @ 70A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 25µA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C	패키지: D-67	재고5,040
MBR7580R	GeneSiC Semiconductor	DIODE SCHOTTKY REV 80V DO5 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 75A Voltage - Forward (Vf) (Max) @ If: 840mV @ 75A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 80V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-203AB, DO-5, Stud	재고5,456
FR85B02	GeneSiC Semiconductor	DIODE GEN PURP 100V 85A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 85A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 25µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -40°C ~ 125°C	패키지: DO-203AB, DO-5, Stud	재고3,472
FR20G02	GeneSiC Semiconductor	DIODE GEN PURP 400V 20A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 25µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -40°C ~ 125°C	패키지: DO-203AB, DO-5, Stud	재고6,912
FR40BR02	GeneSiC Semiconductor	DIODE GEN PURP REV 100V 40A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1V @ 40A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 25µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -40°C ~ 125°C	패키지: DO-203AB, DO-5, Stud	재고2,512
FR6DR05	GeneSiC Semiconductor	DIODE GEN PURP REV 200V 16A DO4 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 25µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-203AA, DO-4, Stud	재고7,616
UFT10010	GeneSiC Semiconductor	DIODE GEN PURP 100V 50A TO249AB Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io) (per Diode): 50A Voltage - Forward (Vf) (Max) @ If: 1V @ 50A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 25µA @ 100V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: TO-249AB Supplier Device Package: TO-249AB	패키지: TO-249AB	재고5,120
MURF30020	GeneSiC Semiconductor	DIODE GEN PURP 200V 150A TO244 Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io) (per Diode): 150A Voltage - Forward (Vf) (Max) @ If: 1V @ 150A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25µA @ 200V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: TO-244AB Supplier Device Package: TO-244	패키지: TO-244AB	재고7,568
MBRTA80080R	GeneSiC Semiconductor	DIODE SCHOTTKY 80V 400A 3TOWER Diode Configuration: 1 Pair Common Anode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io) (per Diode): 400A Voltage - Forward (Vf) (Max) @ If: 840mV @ 400A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 80V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	패키지: Three Tower	재고4,384
MBRF60035R	GeneSiC Semiconductor	DIODE SCHOTTKY 35V 300A TO244AB Diode Configuration: 1 Pair Common Anode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io) (per Diode): 300A (DC) Voltage - Forward (Vf) (Max) @ If: 650mV @ 300A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10mA @ 20V Operating Temperature - Junction: -40°C ~ 175°C Mounting Type: Chassis Mount Package / Case: TO-244AB Supplier Device Package: TO-244AB	패키지: TO-244AB	재고2,256
MBRT30040L	GeneSiC Semiconductor	DIODE SCHOTTKY 40V 150A 3 TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io) (per Diode): 150A Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 40V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	패키지: Three Tower	재고7,168
MBR40035CTL	GeneSiC Semiconductor	DIODE SCHOTTKY 35V 200A 2 TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io) (per Diode): 200A Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 35V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Twin Tower Supplier Device Package: Twin Tower	패키지: Twin Tower	재고7,664
FST16040L	GeneSiC Semiconductor	DIODE SCHOTTKY 40V 80A TO249AB Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io) (per Diode): 80A Voltage - Forward (Vf) (Max) @ If: 600mV @ 80A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 40V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: TO-249AB Supplier Device Package: TO-249AB	패키지: TO-249AB	재고5,168
MBRT40040	GeneSiC Semiconductor	DIODE MODULE 40V 400A 3TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io) (per Diode): 400A (DC) Voltage - Forward (Vf) (Max) @ If: 750mV @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	패키지: Three Tower	재고7,824
MURT20010	GeneSiC Semiconductor	DIODE MODULE 100V 200A 3TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io) (per Diode): 200A (DC) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 25µA @ 50V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	패키지: Three Tower	재고5,552
MURF20005R	GeneSiC Semiconductor	DIODE MODULE 50V 200A TO244 Diode Configuration: 1 Pair Common Anode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io) (per Diode): 200A (DC) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 25µA @ 50V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: TO-244AB Supplier Device Package: TO-244	패키지: TO-244AB	재고5,232
MBR40060CT	GeneSiC Semiconductor	DIODE MODULE 60V 400A 2TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io) (per Diode): 400A (DC) Voltage - Forward (Vf) (Max) @ If: 800mV @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 20V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Twin Tower Supplier Device Package: Twin Tower	패키지: Twin Tower	재고5,072
MBR300150CTR	GeneSiC Semiconductor	DIODE SCHOTTKY 150V 150A 2 TOWER Diode Configuration: 1 Pair Common Anode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io) (per Diode): 150A Voltage - Forward (Vf) (Max) @ If: 880mV @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 150V Operating Temperature - Junction: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Twin Tower Supplier Device Package: Twin Tower	패키지: Twin Tower	재고6,720
MBR30080CT	GeneSiC Semiconductor	DIODE MODULE 80V 300A 2TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io) (per Diode): 300A (DC) Voltage - Forward (Vf) (Max) @ If: 840mV @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 8mA @ 20V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Twin Tower Supplier Device Package: Twin Tower	패키지: Twin Tower	재고5,648
MBR12040CTR	GeneSiC Semiconductor	DIODE MODULE 40V 120A 2TOWER Diode Configuration: 1 Pair Common Anode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io) (per Diode): 120A (DC) Voltage - Forward (Vf) (Max) @ If: 650mV @ 120A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 20V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Twin Tower Supplier Device Package: Twin Tower	패키지: Twin Tower	재고6,704
FST12020	GeneSiC Semiconductor	DIODE MODULE 20V 120A TO249AB Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io) (per Diode): 120A (DC) Voltage - Forward (Vf) (Max) @ If: 650mV @ 120A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 20V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: TO-249AB Supplier Device Package: TO-249AB	패키지: TO-249AB	재고6,000
MBR2X120A180	GeneSiC Semiconductor	DIODE SCHOTTKY 180V 120A SOT227 Diode Configuration: 2 Independent Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 180V Current - Average Rectified (Io) (per Diode): 120A Voltage - Forward (Vf) (Max) @ If: 920mV @ 120A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 180V Operating Temperature - Junction: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	패키지: SOT-227-4, miniBLOC	재고5,984
KBPC1504W	GeneSiC Semiconductor	DIODE BRIDGE 15A 400V 1PH KBPC-W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A Current - Reverse Leakage @ Vr: 5µA @ 400V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, KBPC-W Supplier Device Package: KBPC-W	패키지: 4-Square, KBPC-W	재고4,336
GBU6J	GeneSiC Semiconductor	DIODE BRIDGE 600V 6A GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A Current - Reverse Leakage @ Vr: 5µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: 4-SIP, GBU	재고8,460
GD10MPS12A	GeneSiC Semiconductor	DIODE SIL CARB 1.2KV 25A TO220-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 5 µA @ 1200 V Capacitance @ Vr, F: 367pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote
GBJ25D	GeneSiC Semiconductor	200V 25A GBJ SINGLE PHASE BRIDGE Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBJ Supplier Device Package: GBJ	패키지: -	Request a Quote
GBJ10M	GeneSiC Semiconductor	1000V 10A GBJ SINGLE PHASE BRIDG Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBJ Supplier Device Package: GBJ	패키지: -	Request a Quote

MBRH240150

GeneSiC Semiconductor

DIODE SCHOTTKY 150V 240A D67

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 240A
Voltage - Forward (Vf) (Max) @ If: 880mV @ 240A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C

패키지: D-67

재고7,104

MURH7020R

GeneSiC Semiconductor

DIODE FAST 200V 70A D-67

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1V @ 70A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 25µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C

패키지: D-67

재고5,040

MBR7580R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 80V DO5

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 75A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 75A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 80V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-203AB, DO-5, Stud

재고5,456

FR85B02

GeneSiC Semiconductor

DIODE GEN PURP 100V 85A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 85A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 25µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C

패키지: DO-203AB, DO-5, Stud

재고3,472

FR20G02

GeneSiC Semiconductor

DIODE GEN PURP 400V 20A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C

패키지: DO-203AB, DO-5, Stud

재고6,912

FR40BR02

GeneSiC Semiconductor

DIODE GEN PURP REV 100V 40A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1V @ 40A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 25µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C

패키지: DO-203AB, DO-5, Stud

재고2,512

FR6DR05

GeneSiC Semiconductor

DIODE GEN PURP REV 200V 16A DO4

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-203AA, DO-4, Stud

재고7,616

UFT10010

GeneSiC Semiconductor

DIODE GEN PURP 100V 50A TO249AB

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 50A
Voltage - Forward (Vf) (Max) @ If: 1V @ 50A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 25µA @ 100V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: TO-249AB
Supplier Device Package: TO-249AB

패키지: TO-249AB

재고5,120

MURF30020

GeneSiC Semiconductor

DIODE GEN PURP 200V 150A TO244

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io) (per Diode): 150A
Voltage - Forward (Vf) (Max) @ If: 1V @ 150A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25µA @ 200V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Supplier Device Package: TO-244

패키지: TO-244AB

재고7,568

MBRTA80080R

GeneSiC Semiconductor

DIODE SCHOTTKY 80V 400A 3TOWER

Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io) (per Diode): 400A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 400A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 80V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

패키지: Three Tower

재고4,384

MBRF60035R

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 300A TO244AB

Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 300A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10mA @ 20V
Operating Temperature - Junction: -40°C ~ 175°C
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Supplier Device Package: TO-244AB

패키지: TO-244AB

재고2,256

MBRT30040L

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 150A 3 TOWER

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io) (per Diode): 150A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 40V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

패키지: Three Tower

재고7,168

MBR40035CTL

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 200A 2 TOWER

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io) (per Diode): 200A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 35V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower

패키지: Twin Tower

재고7,664

FST16040L

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 80A TO249AB

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io) (per Diode): 80A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 80A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 40V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: TO-249AB
Supplier Device Package: TO-249AB

패키지: TO-249AB

재고5,168

MBRT40040

GeneSiC Semiconductor

DIODE MODULE 40V 400A 3TOWER

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 20V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

패키지: Three Tower

재고7,824

MURT20010

GeneSiC Semiconductor

DIODE MODULE 100V 200A 3TOWER

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

패키지: Three Tower

재고5,552

MURF20005R

GeneSiC Semiconductor

DIODE MODULE 50V 200A TO244

Diode Configuration: 1 Pair Common Anode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Supplier Device Package: TO-244

패키지: TO-244AB

재고5,232

MBR40060CT

GeneSiC Semiconductor

DIODE MODULE 60V 400A 2TOWER

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 20V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower

패키지: Twin Tower

재고5,072

MBR300150CTR

GeneSiC Semiconductor

DIODE SCHOTTKY 150V 150A 2 TOWER

Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io) (per Diode): 150A
Voltage - Forward (Vf) (Max) @ If: 880mV @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 150V
Operating Temperature - Junction: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower

패키지: Twin Tower

재고6,720

MBR30080CT

GeneSiC Semiconductor

DIODE MODULE 80V 300A 2TOWER

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - Forward (Vf) (Max) @ If: 840mV @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 8mA @ 20V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower

패키지: Twin Tower

재고5,648

MBR12040CTR

GeneSiC Semiconductor

DIODE MODULE 40V 120A 2TOWER

Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io) (per Diode): 120A (DC)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 120A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower

패키지: Twin Tower

재고6,704

FST12020

GeneSiC Semiconductor

DIODE MODULE 20V 120A TO249AB

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io) (per Diode): 120A (DC)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 120A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: TO-249AB
Supplier Device Package: TO-249AB

패키지: TO-249AB

재고6,000

MBR2X120A180

GeneSiC Semiconductor

DIODE SCHOTTKY 180V 120A SOT227

Diode Configuration: 2 Independent
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 180V
Current - Average Rectified (Io) (per Diode): 120A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 120A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 180V
Operating Temperature - Junction: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227

패키지: SOT-227-4, miniBLOC

재고5,984

KBPC1504W

GeneSiC Semiconductor

DIODE BRIDGE 15A 400V 1PH KBPC-W

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A
Current - Reverse Leakage @ Vr: 5µA @ 400V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
Supplier Device Package: KBPC-W

패키지: 4-Square, KBPC-W

재고4,336

GBU6J

GeneSiC Semiconductor

DIODE BRIDGE 600V 6A GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
Current - Reverse Leakage @ Vr: 5µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: 4-SIP, GBU

재고8,460

GD10MPS12A

GeneSiC Semiconductor

DIODE SIL CARB 1.2KV 25A TO220-2

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Capacitance @ Vr, F: 367pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

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GBJ25D

GeneSiC Semiconductor

200V 25A GBJ SINGLE PHASE BRIDGE

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBJ
Supplier Device Package: GBJ

패키지: -

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GBJ10M

GeneSiC Semiconductor

1000V 10A GBJ SINGLE PHASE BRIDG

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBJ
Supplier Device Package: GBJ

패키지: -

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