페이지 155 - IDT, Integrated Device Technology Inc 제품 - 메모리

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
70V7339S133BC8	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 133MHZ 256CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 9Mb (512K x 18) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 4.2ns Voltage - Supply: 3.15 V ~ 3.45 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 256-LBGA Supplier Device Package: 256-CABGA (17x17)	패키지: 256-LBGA	재고2,496	SRAM	SRAM - Dual Port, Synchronous	9Mb (512K x 18)	Parallel	133MHz	-	4.2ns	3.15 V ~ 3.45 V	0°C ~ 70°C (TA)	Surface Mount	256-LBGA	256-CABGA (17x17)
70T3599S133BC8	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 133MHZ 256CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 4.2ns Voltage - Supply: 2.4 V ~ 2.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 256-LBGA Supplier Device Package: 256-CABGA (17x17)	패키지: 256-LBGA	재고4,720	SRAM	SRAM - Dual Port, Synchronous	4.5Mb (128K x 36)	Parallel	133MHz	-	4.2ns	2.4 V ~ 2.6 V	0°C ~ 70°C (TA)	Surface Mount	256-LBGA	256-CABGA (17x17)
70T3319S133BF8	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 133MHZ 208CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 4.5Mb (256K x 18) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 4.2ns Voltage - Supply: 2.4 V ~ 2.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 208-LFBGA Supplier Device Package: 208-CABGA (15x15)	패키지: 208-LFBGA	재고4,416	SRAM	SRAM - Dual Port, Synchronous	4.5Mb (256K x 18)	Parallel	133MHz	-	4.2ns	2.4 V ~ 2.6 V	0°C ~ 70°C (TA)	Surface Mount	208-LFBGA	208-CABGA (15x15)
70T3319S133BC8	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 133MHZ 256CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 4.5Mb (256K x 18) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 4.2ns Voltage - Supply: 2.4 V ~ 2.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 256-LBGA Supplier Device Package: 256-CABGA (17x17)	패키지: 256-LBGA	재고3,440	SRAM	SRAM - Dual Port, Synchronous	4.5Mb (256K x 18)	Parallel	133MHz	-	4.2ns	2.4 V ~ 2.6 V	0°C ~ 70°C (TA)	Surface Mount	256-LBGA	256-CABGA (17x17)
7142SA100CB	IDT, Integrated Device Technology Inc	IC SRAM 16KBIT 100NS SB48 Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 100ns Access Time: 100ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 48-DIP (0.600", 15.24mm) Supplier Device Package: 48-SIDE BRAZED	패키지: 48-DIP (0.600", 15.24mm)	재고6,800	SRAM	SRAM - Dual Port, Asynchronous	16Kb (2K x 8)	Parallel	-	100ns	100ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	48-DIP (0.600", 15.24mm)	48-SIDE BRAZED
7132SA100CB	IDT, Integrated Device Technology Inc	IC SRAM 16KBIT 100NS SB48 Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 100ns Access Time: 100ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 48-DIP (0.600", 15.24mm) Supplier Device Package: 48-SIDE BRAZED	패키지: 48-DIP (0.600", 15.24mm)	재고2,112	SRAM	SRAM - Dual Port, Asynchronous	16Kb (2K x 8)	Parallel	-	100ns	100ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	48-DIP (0.600", 15.24mm)	48-SIDE BRAZED
7026L20G	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT 20NS 84PGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 256Kb (16K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 84-BPGA Supplier Device Package: 84-PGA (27.94x27.94)	패키지: 84-BPGA	재고6,496	SRAM	SRAM - Dual Port, Asynchronous	256Kb (16K x 16)	Parallel	-	20ns	20ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Through Hole	84-BPGA	84-PGA (27.94x27.94)
70T3589S133BC	IDT, Integrated Device Technology Inc	IC SRAM 2MBIT 133MHZ 256CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 2Mb (64K x 36) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 4.2ns Voltage - Supply: 2.4 V ~ 2.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 256-LBGA Supplier Device Package: 256-CABGA (17x17)	패키지: 256-LBGA	재고5,856	SRAM	SRAM - Dual Port, Synchronous	2Mb (64K x 36)	Parallel	133MHz	-	4.2ns	2.4 V ~ 2.6 V	0°C ~ 70°C (TA)	Surface Mount	256-LBGA	256-CABGA (17x17)
70T3399S133BC	IDT, Integrated Device Technology Inc	IC SRAM 2MBIT 133MHZ 256CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 2Mb (128K x 18) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 4.2ns Voltage - Supply: 2.4 V ~ 2.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 256-LBGA Supplier Device Package: 256-CABGA (17x17)	패키지: 256-LBGA	재고5,328	SRAM	SRAM - Dual Port, Synchronous	2Mb (128K x 18)	Parallel	133MHz	-	4.2ns	2.4 V ~ 2.6 V	0°C ~ 70°C (TA)	Surface Mount	256-LBGA	256-CABGA (17x17)
7008L55G	IDT, Integrated Device Technology Inc	IC SRAM 512KBIT 55NS 84PGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 512Kb (64K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 84-BPGA Supplier Device Package: 84-PGA (27.94x27.94)	패키지: 84-BPGA	재고6,880	SRAM	SRAM - Dual Port, Asynchronous	512Kb (64K x 8)	Parallel	-	55ns	55ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Through Hole	84-BPGA	84-PGA (27.94x27.94)
70V639S10PRFG8	IDT, Integrated Device Technology Inc	IC SRAM 2.25MBIT 10NS 128TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 2.25Mb (128K x 18) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 3.15 V ~ 3.45 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 128-LQFP Supplier Device Package: 128-TQFP (14x20)	패키지: 128-LQFP	재고5,872	SRAM	SRAM - Dual Port, Asynchronous	2.25Mb (128K x 18)	Parallel	-	10ns	10ns	3.15 V ~ 3.45 V	0°C ~ 70°C (TA)	Surface Mount	128-LQFP	128-TQFP (14x20)
70V639S10PRF8	IDT, Integrated Device Technology Inc	IC SRAM 2.25MBIT 10NS 128TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 2.25Mb (128K x 18) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 3.15 V ~ 3.45 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 128-LQFP Supplier Device Package: 128-TQFP (14x20)	패키지: 128-LQFP	재고5,824	SRAM	SRAM - Dual Port, Asynchronous	2.25Mb (128K x 18)	Parallel	-	10ns	10ns	3.15 V ~ 3.45 V	0°C ~ 70°C (TA)	Surface Mount	128-LQFP	128-TQFP (14x20)
70V3399S166PRF8	IDT, Integrated Device Technology Inc	IC SRAM 2MBIT 166MHZ 128TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 2Mb (128K x 18) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 3.6ns Voltage - Supply: 3.15 V ~ 3.45 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 128-LQFP Supplier Device Package: 128-TQFP (14x20)	패키지: 128-LQFP	재고3,136	SRAM	SRAM - Dual Port, Synchronous	2Mb (128K x 18)	Parallel	166MHz	-	3.6ns	3.15 V ~ 3.45 V	0°C ~ 70°C (TA)	Surface Mount	128-LQFP	128-TQFP (14x20)
70V26L25G	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT 25NS 84PGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 256Kb (16K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 84-BPGA Supplier Device Package: 84-PGA (27.94x27.94)	패키지: 84-BPGA	재고5,056	SRAM	SRAM - Dual Port, Asynchronous	256Kb (16K x 16)	Parallel	-	25ns	25ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Through Hole	84-BPGA	84-PGA (27.94x27.94)
7140LA55CB	IDT, Integrated Device Technology Inc	IC SRAM 8KBIT 55NS SB48 Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 8Kb (1K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 48-DIP (0.600", 15.24mm) Supplier Device Package: 48-SIDE BRAZED	패키지: 48-DIP (0.600", 15.24mm)	재고7,968	SRAM	SRAM - Dual Port, Asynchronous	8Kb (1K x 8)	Parallel	-	55ns	55ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	48-DIP (0.600", 15.24mm)	48-SIDE BRAZED
7140LA35CB	IDT, Integrated Device Technology Inc	IC SRAM 8KBIT 35NS SB48 Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 8Kb (1K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 48-DIP (0.600", 15.24mm) Supplier Device Package: 48-SIDE BRAZED	패키지: 48-DIP (0.600", 15.24mm)	재고5,184	SRAM	SRAM - Dual Port, Asynchronous	8Kb (1K x 8)	Parallel	-	35ns	35ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	48-DIP (0.600", 15.24mm)	48-SIDE BRAZED
7130LA55CB	IDT, Integrated Device Technology Inc	IC SRAM 8KBIT 55NS SB48 Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 8Kb (1K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 48-DIP (0.600", 15.24mm) Supplier Device Package: 48-SIDE BRAZED	패키지: 48-DIP (0.600", 15.24mm)	재고3,488	SRAM	SRAM - Dual Port, Asynchronous	8Kb (1K x 8)	Parallel	-	55ns	55ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	48-DIP (0.600", 15.24mm)	48-SIDE BRAZED
7130LA35CB	IDT, Integrated Device Technology Inc	IC SRAM 8KBIT 35NS SB48 Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 8Kb (1K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 48-DIP (0.600", 15.24mm) Supplier Device Package: 48-SIDE BRAZED	패키지: 48-DIP (0.600", 15.24mm)	재고2,272	SRAM	SRAM - Dual Port, Asynchronous	8Kb (1K x 8)	Parallel	-	35ns	35ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	48-DIP (0.600", 15.24mm)	48-SIDE BRAZED
70V657S10DRG	IDT, Integrated Device Technology Inc	IC SRAM 1.125MBIT 10NS 208QFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 1.125Mb (32K x 36) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 3.15 V ~ 3.45 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 208-BFQFP Supplier Device Package: 208-PQFP (28x28)	패키지: 208-BFQFP	재고5,184	SRAM	SRAM - Dual Port, Asynchronous	1.125Mb (32K x 36)	Parallel	-	10ns	10ns	3.15 V ~ 3.45 V	0°C ~ 70°C (TA)	Surface Mount	208-BFQFP	208-PQFP (28x28)
70V657S10DR	IDT, Integrated Device Technology Inc	IC SRAM 1.125MBIT 10NS 208QFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 1.125Mb (32K x 36) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 3.15 V ~ 3.45 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 208-BFQFP Supplier Device Package: 208-PQFP (28x28)	패키지: 208-BFQFP	재고6,448	SRAM	SRAM - Dual Port, Asynchronous	1.125Mb (32K x 36)	Parallel	-	10ns	10ns	3.15 V ~ 3.45 V	0°C ~ 70°C (TA)	Surface Mount	208-BFQFP	208-PQFP (28x28)
70V3579S5DRI	IDT, Integrated Device Technology Inc	IC SRAM 1.125MBIT 5NS 208QFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 1.125Mb (32K x 36) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 5ns Voltage - Supply: 3.15 V ~ 3.45 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 208-BFQFP Supplier Device Package: 208-PQFP (28x28)	패키지: 208-BFQFP	재고2,960	SRAM	SRAM - Dual Port, Synchronous	1.125Mb (32K x 36)	Parallel	-	-	5ns	3.15 V ~ 3.45 V	-40°C ~ 85°C (TA)	Surface Mount	208-BFQFP	208-PQFP (28x28)
70V3389S5PRFI	IDT, Integrated Device Technology Inc	IC SRAM 1.125MBIT 5NS 128TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 1.125Mb (64K x 18) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 5ns Voltage - Supply: 3.15 V ~ 3.45 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 128-LQFP Supplier Device Package: 128-TQFP (14x20)	패키지: 128-LQFP	재고5,472	SRAM	SRAM - Dual Port, Synchronous	1.125Mb (64K x 18)	Parallel	-	-	5ns	3.15 V ~ 3.45 V	-40°C ~ 85°C (TA)	Surface Mount	128-LQFP	128-TQFP (14x20)
7007L20G	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT 20NS 68PGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 68-BPGA Supplier Device Package: 68-PGA (29.46x29.46)	패키지: 68-BPGA	재고4,384	SRAM	SRAM - Dual Port, Asynchronous	256Kb (32K x 8)	Parallel	-	20ns	20ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Through Hole	68-BPGA	68-PGA (29.46x29.46)
70V7599S200BC8	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 200MHZ 256CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3.4ns Voltage - Supply: 3.15 V ~ 3.45 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 256-LBGA Supplier Device Package: 256-CABGA (17x17)	패키지: 256-LBGA	재고7,520	SRAM	SRAM - Dual Port, Synchronous	4.5Mb (128K x 36)	Parallel	200MHz	-	3.4ns	3.15 V ~ 3.45 V	0°C ~ 70°C (TA)	Surface Mount	256-LBGA	256-CABGA (17x17)
70V7319S200BC8	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 200MHZ 256CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 4.5Mb (256K x 18) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3.4ns Voltage - Supply: 3.15 V ~ 3.45 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 256-LBGA Supplier Device Package: 256-CABGA (17x17)	패키지: 256-LBGA	재고3,456	SRAM	SRAM - Dual Port, Synchronous	4.5Mb (256K x 18)	Parallel	200MHz	-	3.4ns	3.15 V ~ 3.45 V	0°C ~ 70°C (TA)	Surface Mount	256-LBGA	256-CABGA (17x17)
7052L20G	IDT, Integrated Device Technology Inc	IC SRAM 16KBIT 20NS 108PGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Quad Port, Asynchronous Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 108-BPGA Supplier Device Package: 108-PGA (30.48x30.48)	패키지: 108-BPGA	재고5,776	SRAM	SRAM - Quad Port, Asynchronous	16Kb (2K x 8)	Parallel	-	20ns	20ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Through Hole	108-BPGA	108-PGA (30.48x30.48)
70V7319S133BFI8	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 133MHZ 208CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 4.5Mb (256K x 18) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 4.2ns Voltage - Supply: 3.15 V ~ 3.45 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 208-LFBGA Supplier Device Package: 208-CABGA (15x15)	패키지: 208-LFBGA	재고5,632	SRAM	SRAM - Dual Port, Synchronous	4.5Mb (256K x 18)	Parallel	133MHz	-	4.2ns	3.15 V ~ 3.45 V	-40°C ~ 85°C (TA)	Surface Mount	208-LFBGA	208-CABGA (15x15)
70V639S12PRF8	IDT, Integrated Device Technology Inc	IC SRAM 2.25MBIT 12NS 128TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 2.25Mb (128K x 18) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12ns Voltage - Supply: 3.15 V ~ 3.45 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 128-LQFP Supplier Device Package: 128-TQFP (14x20)	패키지: 128-LQFP	재고5,232	SRAM	SRAM - Dual Port, Asynchronous	2.25Mb (128K x 18)	Parallel	-	12ns	12ns	3.15 V ~ 3.45 V	0°C ~ 70°C (TA)	Surface Mount	128-LQFP	128-TQFP (14x20)

70V7339S133BC8

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 133MHZ 256CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 9Mb (512K x 18)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 4.2ns
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-LBGA
Supplier Device Package: 256-CABGA (17x17)

패키지: 256-LBGA

재고2,496

SRAM

SRAM - Dual Port, Synchronous

9Mb (512K x 18)

Parallel

133MHz

-

4.2ns

3.15 V ~ 3.45 V

0°C ~ 70°C (TA)

Surface Mount

256-LBGA

256-CABGA (17x17)

70T3599S133BC8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 133MHZ 256CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 4.2ns
Voltage - Supply: 2.4 V ~ 2.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-LBGA
Supplier Device Package: 256-CABGA (17x17)

패키지: 256-LBGA

재고4,720

SRAM

SRAM - Dual Port, Synchronous

4.5Mb (128K x 36)

Parallel

133MHz

-

4.2ns

2.4 V ~ 2.6 V

0°C ~ 70°C (TA)

Surface Mount

256-LBGA

256-CABGA (17x17)

70T3319S133BF8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 133MHZ 208CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 4.5Mb (256K x 18)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 4.2ns
Voltage - Supply: 2.4 V ~ 2.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 208-LFBGA
Supplier Device Package: 208-CABGA (15x15)

패키지: 208-LFBGA

재고4,416

SRAM

SRAM - Dual Port, Synchronous

4.5Mb (256K x 18)

Parallel

133MHz

-

4.2ns

2.4 V ~ 2.6 V

0°C ~ 70°C (TA)

Surface Mount

208-LFBGA

208-CABGA (15x15)

70T3319S133BC8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 133MHZ 256CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 4.5Mb (256K x 18)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 4.2ns
Voltage - Supply: 2.4 V ~ 2.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-LBGA
Supplier Device Package: 256-CABGA (17x17)

패키지: 256-LBGA

재고3,440

SRAM

SRAM - Dual Port, Synchronous

4.5Mb (256K x 18)

Parallel

133MHz

-

4.2ns

2.4 V ~ 2.6 V

0°C ~ 70°C (TA)

Surface Mount

256-LBGA

256-CABGA (17x17)

7142SA100CB

IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 100NS SB48

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 48-DIP (0.600", 15.24mm)
Supplier Device Package: 48-SIDE BRAZED

패키지: 48-DIP (0.600", 15.24mm)

재고6,800

SRAM

SRAM - Dual Port, Asynchronous

16Kb (2K x 8)

Parallel

-

100ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

48-DIP (0.600", 15.24mm)

48-SIDE BRAZED

7132SA100CB

IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 100NS SB48

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 48-DIP (0.600", 15.24mm)
Supplier Device Package: 48-SIDE BRAZED

패키지: 48-DIP (0.600", 15.24mm)

재고2,112

SRAM

SRAM - Dual Port, Asynchronous

16Kb (2K x 8)

Parallel

-

100ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

48-DIP (0.600", 15.24mm)

48-SIDE BRAZED

7026L20G

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 20NS 84PGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 256Kb (16K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 84-BPGA
Supplier Device Package: 84-PGA (27.94x27.94)

패키지: 84-BPGA

재고6,496

SRAM

SRAM - Dual Port, Asynchronous

256Kb (16K x 16)

Parallel

-

20ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Through Hole

84-BPGA

84-PGA (27.94x27.94)

70T3589S133BC

IDT, Integrated Device Technology Inc

IC SRAM 2MBIT 133MHZ 256CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 2Mb (64K x 36)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 4.2ns
Voltage - Supply: 2.4 V ~ 2.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-LBGA
Supplier Device Package: 256-CABGA (17x17)

패키지: 256-LBGA

재고5,856

SRAM

SRAM - Dual Port, Synchronous

2Mb (64K x 36)

Parallel

133MHz

-

4.2ns

2.4 V ~ 2.6 V

0°C ~ 70°C (TA)

Surface Mount

256-LBGA

256-CABGA (17x17)

70T3399S133BC

IDT, Integrated Device Technology Inc

IC SRAM 2MBIT 133MHZ 256CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 2Mb (128K x 18)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 4.2ns
Voltage - Supply: 2.4 V ~ 2.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-LBGA
Supplier Device Package: 256-CABGA (17x17)

패키지: 256-LBGA

재고5,328

SRAM

SRAM - Dual Port, Synchronous

2Mb (128K x 18)

Parallel

133MHz

-

4.2ns

2.4 V ~ 2.6 V

0°C ~ 70°C (TA)

Surface Mount

256-LBGA

256-CABGA (17x17)

7008L55G

IDT, Integrated Device Technology Inc

IC SRAM 512KBIT 55NS 84PGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 512Kb (64K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 84-BPGA
Supplier Device Package: 84-PGA (27.94x27.94)

패키지: 84-BPGA

재고6,880

SRAM

SRAM - Dual Port, Asynchronous

512Kb (64K x 8)

Parallel

-

55ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Through Hole

84-BPGA

84-PGA (27.94x27.94)

70V639S10PRFG8

IDT, Integrated Device Technology Inc

IC SRAM 2.25MBIT 10NS 128TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 2.25Mb (128K x 18)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 128-LQFP
Supplier Device Package: 128-TQFP (14x20)

패키지: 128-LQFP

재고5,872

SRAM

SRAM - Dual Port, Asynchronous

2.25Mb (128K x 18)

Parallel

-

10ns

3.15 V ~ 3.45 V

0°C ~ 70°C (TA)

Surface Mount

128-LQFP

128-TQFP (14x20)

70V639S10PRF8

IDT, Integrated Device Technology Inc

IC SRAM 2.25MBIT 10NS 128TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 2.25Mb (128K x 18)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 128-LQFP
Supplier Device Package: 128-TQFP (14x20)

패키지: 128-LQFP

재고5,824

SRAM

SRAM - Dual Port, Asynchronous

2.25Mb (128K x 18)

Parallel

-

10ns

3.15 V ~ 3.45 V

0°C ~ 70°C (TA)

Surface Mount

128-LQFP

128-TQFP (14x20)

70V3399S166PRF8

IDT, Integrated Device Technology Inc

IC SRAM 2MBIT 166MHZ 128TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 2Mb (128K x 18)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 3.6ns
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 128-LQFP
Supplier Device Package: 128-TQFP (14x20)

패키지: 128-LQFP

재고3,136

SRAM

SRAM - Dual Port, Synchronous

2Mb (128K x 18)

Parallel

166MHz

-

3.6ns

3.15 V ~ 3.45 V

0°C ~ 70°C (TA)

Surface Mount

128-LQFP

128-TQFP (14x20)

70V26L25G

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 25NS 84PGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 256Kb (16K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 84-BPGA
Supplier Device Package: 84-PGA (27.94x27.94)

패키지: 84-BPGA

재고5,056

SRAM

SRAM - Dual Port, Asynchronous

256Kb (16K x 16)

Parallel

-

25ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Through Hole

84-BPGA

84-PGA (27.94x27.94)

7140LA55CB

IDT, Integrated Device Technology Inc

IC SRAM 8KBIT 55NS SB48

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 8Kb (1K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 48-DIP (0.600", 15.24mm)
Supplier Device Package: 48-SIDE BRAZED

패키지: 48-DIP (0.600", 15.24mm)

재고7,968

SRAM

SRAM - Dual Port, Asynchronous

8Kb (1K x 8)

Parallel

-

55ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

48-DIP (0.600", 15.24mm)

48-SIDE BRAZED

7140LA35CB

IDT, Integrated Device Technology Inc

IC SRAM 8KBIT 35NS SB48

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 8Kb (1K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 48-DIP (0.600", 15.24mm)
Supplier Device Package: 48-SIDE BRAZED

패키지: 48-DIP (0.600", 15.24mm)

재고5,184

SRAM

SRAM - Dual Port, Asynchronous

8Kb (1K x 8)

Parallel

-

35ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

48-DIP (0.600", 15.24mm)

48-SIDE BRAZED

7130LA55CB

IDT, Integrated Device Technology Inc

IC SRAM 8KBIT 55NS SB48

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 8Kb (1K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 48-DIP (0.600", 15.24mm)
Supplier Device Package: 48-SIDE BRAZED

패키지: 48-DIP (0.600", 15.24mm)

재고3,488

SRAM

SRAM - Dual Port, Asynchronous

8Kb (1K x 8)

Parallel

-

55ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

48-DIP (0.600", 15.24mm)

48-SIDE BRAZED

7130LA35CB

IDT, Integrated Device Technology Inc

IC SRAM 8KBIT 35NS SB48

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 8Kb (1K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 48-DIP (0.600", 15.24mm)
Supplier Device Package: 48-SIDE BRAZED

패키지: 48-DIP (0.600", 15.24mm)

재고2,272

SRAM

SRAM - Dual Port, Asynchronous

8Kb (1K x 8)

Parallel

-

35ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

48-DIP (0.600", 15.24mm)

48-SIDE BRAZED

70V657S10DRG

IDT, Integrated Device Technology Inc

IC SRAM 1.125MBIT 10NS 208QFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 1.125Mb (32K x 36)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 208-BFQFP
Supplier Device Package: 208-PQFP (28x28)

패키지: 208-BFQFP

재고5,184

SRAM

SRAM - Dual Port, Asynchronous

1.125Mb (32K x 36)

Parallel

-

10ns

3.15 V ~ 3.45 V

0°C ~ 70°C (TA)

Surface Mount

208-BFQFP

208-PQFP (28x28)

70V657S10DR

IDT, Integrated Device Technology Inc

IC SRAM 1.125MBIT 10NS 208QFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 1.125Mb (32K x 36)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 208-BFQFP
Supplier Device Package: 208-PQFP (28x28)

패키지: 208-BFQFP

재고6,448

SRAM

SRAM - Dual Port, Asynchronous

1.125Mb (32K x 36)

Parallel

-

10ns

3.15 V ~ 3.45 V

0°C ~ 70°C (TA)

Surface Mount

208-BFQFP

208-PQFP (28x28)

70V3579S5DRI

IDT, Integrated Device Technology Inc

IC SRAM 1.125MBIT 5NS 208QFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 1.125Mb (32K x 36)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 5ns
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 208-BFQFP
Supplier Device Package: 208-PQFP (28x28)

패키지: 208-BFQFP

재고2,960

SRAM

SRAM - Dual Port, Synchronous

1.125Mb (32K x 36)

Parallel

-

5ns

3.15 V ~ 3.45 V

-40°C ~ 85°C (TA)

Surface Mount

208-BFQFP

208-PQFP (28x28)

70V3389S5PRFI

IDT, Integrated Device Technology Inc

IC SRAM 1.125MBIT 5NS 128TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 1.125Mb (64K x 18)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 5ns
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 128-LQFP
Supplier Device Package: 128-TQFP (14x20)

패키지: 128-LQFP

재고5,472

SRAM

SRAM - Dual Port, Synchronous

1.125Mb (64K x 18)

Parallel

-

5ns

3.15 V ~ 3.45 V

-40°C ~ 85°C (TA)

Surface Mount

128-LQFP

128-TQFP (14x20)

7007L20G

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 20NS 68PGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 68-BPGA
Supplier Device Package: 68-PGA (29.46x29.46)

패키지: 68-BPGA

재고4,384

SRAM

SRAM - Dual Port, Asynchronous

256Kb (32K x 8)

Parallel

-

20ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Through Hole

68-BPGA

68-PGA (29.46x29.46)

70V7599S200BC8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 200MHZ 256CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3.4ns
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-LBGA
Supplier Device Package: 256-CABGA (17x17)

패키지: 256-LBGA

재고7,520

SRAM

SRAM - Dual Port, Synchronous

4.5Mb (128K x 36)

Parallel

200MHz

-

3.4ns

3.15 V ~ 3.45 V

0°C ~ 70°C (TA)

Surface Mount

256-LBGA

256-CABGA (17x17)

70V7319S200BC8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 200MHZ 256CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 4.5Mb (256K x 18)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3.4ns
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-LBGA
Supplier Device Package: 256-CABGA (17x17)

패키지: 256-LBGA

재고3,456

SRAM

SRAM - Dual Port, Synchronous

4.5Mb (256K x 18)

Parallel

200MHz

-

3.4ns

3.15 V ~ 3.45 V

0°C ~ 70°C (TA)

Surface Mount

256-LBGA

256-CABGA (17x17)

7052L20G

IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 20NS 108PGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Quad Port, Asynchronous
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 108-BPGA
Supplier Device Package: 108-PGA (30.48x30.48)

패키지: 108-BPGA

재고5,776

SRAM

SRAM - Quad Port, Asynchronous

16Kb (2K x 8)

Parallel

-

20ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Through Hole

108-BPGA

108-PGA (30.48x30.48)

70V7319S133BFI8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 133MHZ 208CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 4.5Mb (256K x 18)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 4.2ns
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 208-LFBGA
Supplier Device Package: 208-CABGA (15x15)

패키지: 208-LFBGA

재고5,632

SRAM

SRAM - Dual Port, Synchronous

4.5Mb (256K x 18)

Parallel

133MHz

-

4.2ns

3.15 V ~ 3.45 V

-40°C ~ 85°C (TA)

Surface Mount

208-LFBGA

208-CABGA (15x15)

70V639S12PRF8

IDT, Integrated Device Technology Inc

IC SRAM 2.25MBIT 12NS 128TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 2.25Mb (128K x 18)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 128-LQFP
Supplier Device Package: 128-TQFP (14x20)

패키지: 128-LQFP

재고5,232

SRAM

SRAM - Dual Port, Asynchronous

2.25Mb (128K x 18)

Parallel

-

12ns

3.15 V ~ 3.45 V

0°C ~ 70°C (TA)

Surface Mount

128-LQFP

128-TQFP (14x20)