페이지 54 - ISSI, Integrated Silicon Solution Inc 제품 - 메모리

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IS43TR16128D-107MBL	ISSI, Integrated Silicon Solution Inc	2G 1.5V DDR3 128MX16 1866MT 96 B Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	패키지: 96-TFBGA	재고8,280	DRAM	SDRAM - DDR3	2Gb (128M x 16)	Parallel	933MHz	15ns	20ns	1.425V ~ 1.575V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS43TR16128DL-125KBL	ISSI, Integrated Silicon Solution Inc	2G 1.5V DDR3 128MX16 1600MT 96 B Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	패키지: 96-TFBGA	재고7,416	DRAM	SDRAM - DDR3L	2Gb (128M x 16)	Parallel	800MHz	15ns	20ns	1.283V ~ 1.45V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS43TR16128D-125KBL	ISSI, Integrated Silicon Solution Inc	2G 1.5V DDR3 128MX16 1600MT 96 B Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	패키지: 96-TFBGA	재고6,516	DRAM	SDRAM - DDR3	2Gb (128M x 16)	Parallel	800MHz	15ns	20ns	1.425V ~ 1.575V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS43TR82560D-107MBL	ISSI, Integrated Silicon Solution Inc	IC DRAM 2G PARALLEL 78TWBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,152	-	-	-	-	-	-	-	-	-	-	-	-
IS25WP016D-JULE-TR	ISSI, Integrated Silicon Solution Inc	IC FLASH 16MB QSPI 8USON Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,400	-	-	-	-	-	-	-	-	-	-	-	-
IS43TR16128D-125KBLI	ISSI, Integrated Silicon Solution Inc	2G 1.5V DDR3 128MX16 1600MT 96 B Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	패키지: 96-TFBGA	재고4,800	DRAM	SDRAM - DDR3	2Gb (128M x 16)	Parallel	800MHz	15ns	20ns	1.425V ~ 1.575V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS43QR16256B-083RBLI	ISSI, Integrated Silicon Solution Inc	4G DDR4 256MX16 BGA(96) Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 1.2GHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-BGA Supplier Device Package: 96-BGA	패키지: 96-BGA	재고7,116	DRAM	SDRAM - DDR4	4Gb (256M x 16)	Parallel	1.2GHz	15ns	-	1.14V ~ 1.26V	-40°C ~ 95°C (TC)	Surface Mount	96-BGA	96-BGA
IS43QR16256B-083RBL	ISSI, Integrated Silicon Solution Inc	4G DDR4 256MX16 BGA(96) Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 1.2GHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-BGA Supplier Device Package: 96-BGA	패키지: 96-BGA	재고5,376	DRAM	SDRAM - DDR4	4Gb (256M x 16)	Parallel	1.2GHz	15ns	-	1.14V ~ 1.26V	0°C ~ 95°C (TC)	Surface Mount	96-BGA	96-BGA
IS41C16105D-50KLI	ISSI, Integrated Silicon Solution Inc	IC DRAM 16M PARALLEL 42SOJ Memory Type: Volatile Memory Format: DRAM Technology: DRAM - EDO Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 84ns Access Time: 25ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 42-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 42-SOJ	패키지: 42-BSOJ (0.400", 10.16mm Width)	재고5,056	DRAM	DRAM - EDO	16Mb (1M x 16)	Parallel	-	84ns	25ns	4.5V ~ 5.5V	-40°C ~ 85°C (TA)	Surface Mount	42-BSOJ (0.400", 10.16mm Width)	42-SOJ
IS41C16100D-50KLI	ISSI, Integrated Silicon Solution Inc	IC DRAM 16M PARALLEL 42SOJ Memory Type: Volatile Memory Format: DRAM Technology: DRAM - EDO Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 84ns Access Time: 25ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 42-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 42-SOJ	패키지: 42-BSOJ (0.400", 10.16mm Width)	재고6,112	DRAM	DRAM - EDO	16Mb (1M x 16)	Parallel	-	84ns	25ns	4.5V ~ 5.5V	-40°C ~ 85°C (TA)	Surface Mount	42-BSOJ (0.400", 10.16mm Width)	42-SOJ
IS43TR16256BL-107MBLI	ISSI, Integrated Silicon Solution Inc	4G 1.35V DDR3 256MX16 1866MT 96 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	패키지: 96-TFBGA	재고6,720	DRAM	SDRAM - DDR3L	4Gb (256M x 16)	Parallel	933MHz	15ns	20ns	1.283V ~ 1.45V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS43TR16256B-107MBLI	ISSI, Integrated Silicon Solution Inc	4G 1.5V DDR3 256MX16 1866MT 96 B Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	패키지: 96-TFBGA	재고6,384	DRAM	SDRAM - DDR3	4Gb (256M x 16)	Parallel	933MHz	15ns	20ns	1.425V ~ 1.575V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS43TR16256BL-125KBLI	ISSI, Integrated Silicon Solution Inc	4G 1.35V DDR3L 256MX16 1600MT 96 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	패키지: 96-TFBGA	재고6,120	DRAM	SDRAM - DDR3L	4Gb (256M x 16)	Parallel	800MHz	15ns	20ns	1.283V ~ 1.45V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS43TR16256B-125KBLI	ISSI, Integrated Silicon Solution Inc	4G 1.5V DDR3 256MX16 1600MT 96 B Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	패키지: 96-TFBGA	재고7,512	DRAM	SDRAM - DDR3	4Gb (256M x 16)	Parallel	800MHz	15ns	20ns	1.425V ~ 1.575V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS43TR16256BL-107MBL	ISSI, Integrated Silicon Solution Inc	4G 1.35V DDR3 256MX16 1866MT 96 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	패키지: 96-TFBGA	재고7,344	DRAM	SDRAM - DDR3L	4Gb (256M x 16)	Parallel	933MHz	15ns	20ns	1.283V ~ 1.45V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS43TR16128DL-107MBLI	ISSI, Integrated Silicon Solution Inc	2G 1.5V DDR3 128MX16 1866MT 96 B Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	패키지: 96-TFBGA	재고6,752	DRAM	SDRAM - DDR3L	2Gb (128M x 16)	Parallel	933MHz	15ns	20ns	1.283V ~ 1.45V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS43TR16256BL-125KBL	ISSI, Integrated Silicon Solution Inc	4G 1.35V DDR3L 256MX16 1600MT 96 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	패키지: 96-TFBGA	재고6,496	DRAM	SDRAM - DDR3L	4Gb (256M x 16)	Parallel	800MHz	15ns	20ns	1.283V ~ 1.45V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS43TR16128D-107MBLI	ISSI, Integrated Silicon Solution Inc	2G 1.5V DDR3 128MX16 1866MT 96 B Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	패키지: 96-TFBGA	재고7,728	DRAM	SDRAM - DDR3	2Gb (128M x 16)	Parallel	933MHz	15ns	20ns	1.425V ~ 1.575V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS43TR16256B-125KBL	ISSI, Integrated Silicon Solution Inc	4G 1.5V DDR3 256MX16 1600MT 96 B Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	패키지: 96-TFBGA	재고6,048	DRAM	SDRAM - DDR3	4Gb (256M x 16)	Parallel	800MHz	15ns	20ns	1.425V ~ 1.575V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS43TR16128DL-125KBLI	ISSI, Integrated Silicon Solution Inc	2G 1.5V DDR3 128MX16 1600MT 96 B Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	패키지: 96-TFBGA	재고7,872	DRAM	SDRAM - DDR3L	2Gb (128M x 16)	Parallel	800MHz	15ns	20ns	1.283V ~ 1.45V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS64WV10248EEBLL-10CTLA3-TR	ISSI, Integrated Silicon Solution Inc	8Mb,High-Speed-Automotive,Async Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 8Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10 ns Voltage - Supply: 2.4V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	패키지: -	Request a Quote	SRAM	SRAM - Asynchronous	8Mbit	Parallel	-	10ns	10 ns	2.4V ~ 3.6V	-40°C ~ 125°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
IS25LX256-JHLE	ISSI, Integrated Silicon Solution Inc	IC FLASH 256MBIT SPI/OCT 24TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 256Mbit Memory Interface: SPI - Octal I/O Clock Frequency: 133 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-TFBGA (6x8)	패키지: -	재고1,914	FLASH	FLASH	256Mbit	SPI - Octal I/O	133 MHz	-	-	2.7V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	24-TBGA	24-TFBGA (6x8)
IS43TR16640CL-107MBL-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 1GBIT PAR 96TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 1Gbit Memory Interface: Parallel Clock Frequency: 933 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	패키지: -	Request a Quote	DRAM	SDRAM - DDR3L	1Gbit	Parallel	933 MHz	15ns	20 ns	1.283V ~ 1.45V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS42S32800L-6BLI	ISSI, Integrated Silicon Solution Inc	IC DRAM 256MBIT PAR 90TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mbit Memory Interface: LVTTL Clock Frequency: 166 MHz Write Cycle Time - Word, Page: - Access Time: 5.4 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	패키지: -	Request a Quote	DRAM	SDRAM	256Mbit	LVTTL	166 MHz	-	5.4 ns	3V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
IS43TR16128B-093NBL-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 2GBIT PAR 96TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 2Gbit Memory Interface: Parallel Clock Frequency: 1.066 GHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	패키지: -	Request a Quote	DRAM	SDRAM - DDR3	2Gbit	Parallel	1.066 GHz	15ns	20 ns	1.425V ~ 1.575V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS49RL36160-125FBL	ISSI, Integrated Silicon Solution Inc	IC DRAM 576MBIT PAR 168FBGA Memory Type: Volatile Memory Format: DRAM Technology: RLDRAM 3 Memory Size: 576Mbit Memory Interface: Parallel Clock Frequency: 800 MHz Write Cycle Time - Word, Page: - Access Time: 8 ns Voltage - Supply: 1.28V ~ 1.42V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 168-LBGA Supplier Device Package: 168-FBGA (13.5x13.5)	패키지: -	Request a Quote	DRAM	RLDRAM 3	576Mbit	Parallel	800 MHz	-	8 ns	1.28V ~ 1.42V	0°C ~ 95°C (TC)	Surface Mount	168-LBGA	168-FBGA (13.5x13.5)
IS25LP128F-JBLA3	ISSI, Integrated Silicon Solution Inc	IC FLASH 128MBIT SPI/QUAD 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mbit Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 166 MHz Write Cycle Time - Word, Page: 800µs Access Time: - Voltage - Supply: 2.3V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	패키지: -	재고26,223	FLASH	FLASH - NOR	128Mbit	SPI - Quad I/O, QPI, DTR	166 MHz	800µs	-	2.3V ~ 3.6V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
IS49RL36320-093EBLI	ISSI, Integrated Silicon Solution Inc	RLDRAM3 Memory, 1.15Gbit, x36, C Memory Type: Volatile Memory Format: DRAM Technology: RLDRAM 3 Memory Size: 1.152Gbit Memory Interface: Parallel Clock Frequency: 1.066 GHz Write Cycle Time - Word, Page: - Access Time: 8 ns Voltage - Supply: 1.28V ~ 1.42V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 168-LBGA Supplier Device Package: 168-FBGA (13.5x13.5)	패키지: -	Request a Quote	DRAM	RLDRAM 3	1.152Gbit	Parallel	1.066 GHz	-	8 ns	1.28V ~ 1.42V	-40°C ~ 95°C (TC)	Surface Mount	168-LBGA	168-FBGA (13.5x13.5)

IS43TR16128D-107MBL

ISSI, Integrated Silicon Solution Inc

2G 1.5V DDR3 128MX16 1866MT 96 B

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

패키지: 96-TFBGA

재고8,280

DRAM

SDRAM - DDR3

2Gb (128M x 16)

Parallel

933MHz

15ns

20ns

1.425V ~ 1.575V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS43TR16128DL-125KBL

ISSI, Integrated Silicon Solution Inc

2G 1.5V DDR3 128MX16 1600MT 96 B

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

패키지: 96-TFBGA

재고7,416

DRAM

SDRAM - DDR3L

2Gb (128M x 16)

Parallel

800MHz

15ns

20ns

1.283V ~ 1.45V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS43TR16128D-125KBL

ISSI, Integrated Silicon Solution Inc

2G 1.5V DDR3 128MX16 1600MT 96 B

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

패키지: 96-TFBGA

재고6,516

DRAM

SDRAM - DDR3

2Gb (128M x 16)

Parallel

800MHz

15ns

20ns

1.425V ~ 1.575V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS43TR82560D-107MBL

ISSI, Integrated Silicon Solution Inc

IC DRAM 2G PARALLEL 78TWBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,152

-

IS25WP016D-JULE-TR

ISSI, Integrated Silicon Solution Inc

IC FLASH 16MB QSPI 8USON

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,400

-

IS43TR16128D-125KBLI

ISSI, Integrated Silicon Solution Inc

2G 1.5V DDR3 128MX16 1600MT 96 B

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

패키지: 96-TFBGA

재고4,800

DRAM

SDRAM - DDR3

2Gb (128M x 16)

Parallel

800MHz

15ns

20ns

1.425V ~ 1.575V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS43QR16256B-083RBLI

ISSI, Integrated Silicon Solution Inc

4G DDR4 256MX16 BGA(96)

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 1.2GHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-BGA
Supplier Device Package: 96-BGA

패키지: 96-BGA

재고7,116

DRAM

SDRAM - DDR4

4Gb (256M x 16)

Parallel

1.2GHz

15ns

-

1.14V ~ 1.26V

-40°C ~ 95°C (TC)

Surface Mount

96-BGA

IS43QR16256B-083RBL

ISSI, Integrated Silicon Solution Inc

4G DDR4 256MX16 BGA(96)

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 1.2GHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-BGA
Supplier Device Package: 96-BGA

패키지: 96-BGA

재고5,376

DRAM

SDRAM - DDR4

4Gb (256M x 16)

Parallel

1.2GHz

15ns

-

1.14V ~ 1.26V

0°C ~ 95°C (TC)

Surface Mount

96-BGA

IS41C16105D-50KLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 16M PARALLEL 42SOJ

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM - EDO
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 84ns
Access Time: 25ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 42-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 42-SOJ

패키지: 42-BSOJ (0.400", 10.16mm Width)

재고5,056

DRAM

DRAM - EDO

16Mb (1M x 16)

Parallel

-

84ns

25ns

4.5V ~ 5.5V

-40°C ~ 85°C (TA)

Surface Mount

42-BSOJ (0.400", 10.16mm Width)

42-SOJ

IS41C16100D-50KLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 16M PARALLEL 42SOJ

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM - EDO
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 84ns
Access Time: 25ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 42-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 42-SOJ

패키지: 42-BSOJ (0.400", 10.16mm Width)

재고6,112

DRAM

DRAM - EDO

16Mb (1M x 16)

Parallel

-

84ns

25ns

4.5V ~ 5.5V

-40°C ~ 85°C (TA)

Surface Mount

42-BSOJ (0.400", 10.16mm Width)

42-SOJ

IS43TR16256BL-107MBLI

ISSI, Integrated Silicon Solution Inc

4G 1.35V DDR3 256MX16 1866MT 96

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

패키지: 96-TFBGA

재고6,720

DRAM

SDRAM - DDR3L

4Gb (256M x 16)

Parallel

933MHz

15ns

20ns

1.283V ~ 1.45V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS43TR16256B-107MBLI

ISSI, Integrated Silicon Solution Inc

4G 1.5V DDR3 256MX16 1866MT 96 B

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

패키지: 96-TFBGA

재고6,384

DRAM

SDRAM - DDR3

4Gb (256M x 16)

Parallel

933MHz

15ns

20ns

1.425V ~ 1.575V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS43TR16256BL-125KBLI

ISSI, Integrated Silicon Solution Inc

4G 1.35V DDR3L 256MX16 1600MT 96

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

패키지: 96-TFBGA

재고6,120

DRAM

SDRAM - DDR3L

4Gb (256M x 16)

Parallel

800MHz

15ns

20ns

1.283V ~ 1.45V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS43TR16256B-125KBLI

ISSI, Integrated Silicon Solution Inc

4G 1.5V DDR3 256MX16 1600MT 96 B

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

패키지: 96-TFBGA

재고7,512

DRAM

SDRAM - DDR3

4Gb (256M x 16)

Parallel

800MHz

15ns

20ns

1.425V ~ 1.575V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS43TR16256BL-107MBL

ISSI, Integrated Silicon Solution Inc

4G 1.35V DDR3 256MX16 1866MT 96

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

패키지: 96-TFBGA

재고7,344

DRAM

SDRAM - DDR3L

4Gb (256M x 16)

Parallel

933MHz

15ns

20ns

1.283V ~ 1.45V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS43TR16128DL-107MBLI

ISSI, Integrated Silicon Solution Inc

2G 1.5V DDR3 128MX16 1866MT 96 B

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

패키지: 96-TFBGA

재고6,752

DRAM

SDRAM - DDR3L

2Gb (128M x 16)

Parallel

933MHz

15ns

20ns

1.283V ~ 1.45V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS43TR16256BL-125KBL

ISSI, Integrated Silicon Solution Inc

4G 1.35V DDR3L 256MX16 1600MT 96

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

패키지: 96-TFBGA

재고6,496

DRAM

SDRAM - DDR3L

4Gb (256M x 16)

Parallel

800MHz

15ns

20ns

1.283V ~ 1.45V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS43TR16128D-107MBLI

ISSI, Integrated Silicon Solution Inc

2G 1.5V DDR3 128MX16 1866MT 96 B

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

패키지: 96-TFBGA

재고7,728

DRAM

SDRAM - DDR3

2Gb (128M x 16)

Parallel

933MHz

15ns

20ns

1.425V ~ 1.575V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS43TR16256B-125KBL

ISSI, Integrated Silicon Solution Inc

4G 1.5V DDR3 256MX16 1600MT 96 B

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

패키지: 96-TFBGA

재고6,048

DRAM

SDRAM - DDR3

4Gb (256M x 16)

Parallel

800MHz

15ns

20ns

1.425V ~ 1.575V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS43TR16128DL-125KBLI

ISSI, Integrated Silicon Solution Inc

2G 1.5V DDR3 128MX16 1600MT 96 B

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

패키지: 96-TFBGA

재고7,872

DRAM

SDRAM - DDR3L

2Gb (128M x 16)

Parallel

800MHz

15ns

20ns

1.283V ~ 1.45V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS64WV10248EEBLL-10CTLA3-TR

ISSI, Integrated Silicon Solution Inc

8Mb,High-Speed-Automotive,Async

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 8Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10 ns
Voltage - Supply: 2.4V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

패키지: -

Request a Quote

SRAM

SRAM - Asynchronous

8Mbit

Parallel

-

10ns

10 ns

2.4V ~ 3.6V

-40°C ~ 125°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

IS25LX256-JHLE

ISSI, Integrated Silicon Solution Inc

IC FLASH 256MBIT SPI/OCT 24TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 256Mbit
Memory Interface: SPI - Octal I/O
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-TFBGA (6x8)

패키지: -

재고1,914

FLASH

256Mbit

SPI - Octal I/O

133 MHz

-

2.7V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

24-TBGA

24-TFBGA (6x8)

IS43TR16640CL-107MBL-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 1GBIT PAR 96TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 1Gbit
Memory Interface: Parallel
Clock Frequency: 933 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

패키지: -

Request a Quote

DRAM

SDRAM - DDR3L

1Gbit

Parallel

933 MHz

15ns

20 ns

1.283V ~ 1.45V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS42S32800L-6BLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 256MBIT PAR 90TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mbit
Memory Interface: LVTTL
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

패키지: -

Request a Quote

DRAM

SDRAM

256Mbit

LVTTL

166 MHz

-

5.4 ns

3V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

IS43TR16128B-093NBL-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 2GBIT PAR 96TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gbit
Memory Interface: Parallel
Clock Frequency: 1.066 GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

패키지: -

Request a Quote

DRAM

SDRAM - DDR3

2Gbit

Parallel

1.066 GHz

15ns

20 ns

1.425V ~ 1.575V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS49RL36160-125FBL

ISSI, Integrated Silicon Solution Inc

IC DRAM 576MBIT PAR 168FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: RLDRAM 3
Memory Size: 576Mbit
Memory Interface: Parallel
Clock Frequency: 800 MHz
Write Cycle Time - Word, Page: -
Access Time: 8 ns
Voltage - Supply: 1.28V ~ 1.42V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 168-LBGA
Supplier Device Package: 168-FBGA (13.5x13.5)

패키지: -

Request a Quote

DRAM

RLDRAM 3

576Mbit

Parallel

800 MHz

-

8 ns

1.28V ~ 1.42V

0°C ~ 95°C (TC)

Surface Mount

168-LBGA

168-FBGA (13.5x13.5)

IS25LP128F-JBLA3

ISSI, Integrated Silicon Solution Inc

IC FLASH 128MBIT SPI/QUAD 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mbit
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 800µs
Access Time: -
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

패키지: -

재고26,223

FLASH

FLASH - NOR

128Mbit

SPI - Quad I/O, QPI, DTR

166 MHz

800µs

-

2.3V ~ 3.6V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

IS49RL36320-093EBLI

ISSI, Integrated Silicon Solution Inc

RLDRAM3 Memory, 1.15Gbit, x36, C

Memory Type: Volatile
Memory Format: DRAM
Technology: RLDRAM 3
Memory Size: 1.152Gbit
Memory Interface: Parallel
Clock Frequency: 1.066 GHz
Write Cycle Time - Word, Page: -
Access Time: 8 ns
Voltage - Supply: 1.28V ~ 1.42V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 168-LBGA
Supplier Device Package: 168-FBGA (13.5x13.5)

패키지: -

Request a Quote

DRAM

RLDRAM 3

1.152Gbit

Parallel

1.066 GHz

-

8 ns

1.28V ~ 1.42V

-40°C ~ 95°C (TC)

Surface Mount

168-LBGA

168-FBGA (13.5x13.5)