ISSI, Integrated Silicon Solution Inc 제품

IS42SM16200D-75BLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 32MBIT 133MHZ 54BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile
• Memory Size: 32Mb (2M x 16)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: -
• Access Time: 6ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 54-TFBGA
• Supplier Device Package: 54-TFBGA (8x8)

패키지: 54-TFBGA

IS49NLS18320-25B

ISSI, Integrated Silicon Solution Inc

IC DRAM 576MBIT 400MHZ 144BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: DRAM
• Memory Size: 576Mb (32M x 18)
• Memory Interface: Parallel
• Clock Frequency: 400MHz
• Write Cycle Time - Word, Page: -
• Access Time: 20ns
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 144-TFBGA
• Supplier Device Package: 144-FCBGA (11x18.5)

패키지: 144-TFBGA

IS49NLC36800-25BI

ISSI, Integrated Silicon Solution Inc

IC DRAM 288MBIT 400MHZ 144BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: DRAM
• Memory Size: 288Mb (8M x 36)
• Memory Interface: Parallel
• Clock Frequency: 400MHz
• Write Cycle Time - Word, Page: -
• Access Time: 20ns
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 144-TFBGA
• Supplier Device Package: 144-FCBGA (11x18.5)

패키지: 144-TFBGA

IS42RM32160C-75BL-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 133MHZ 90BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile
• Memory Size: 512Mb (16M x 32)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.4ns
• Voltage - Supply: 2.3 V ~ 3 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 90-LFBGA
• Supplier Device Package: 90-WBGA (8x13)

패키지: 90-LFBGA

IS42S16800E-7BLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 143MHZ 54TFBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 128Mb (8M x 16)
• Memory Interface: Parallel
• Clock Frequency: 143MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 54-TFBGA
• Supplier Device Package: 54-TFBGA (8x8)

패키지: 54-TFBGA

IS42S32200C1-7T

ISSI, Integrated Silicon Solution Inc

IC SDRAM 64MBIT 143MHZ 86TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 64Mb (2M x 32)
• Memory Interface: Parallel
• Clock Frequency: 143MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.5ns
• Voltage - Supply: 3.15 V ~ 3.45 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 86-TFSOP (0.400", 10.16mm Width)
• Supplier Device Package: 86-TSOP II

패키지: 86-TFSOP (0.400", 10.16mm Width)

IS61QDB42M36A-300M3L

ISSI, Integrated Silicon Solution Inc

IC SRAM 72MBIT 300MHZ 165BGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous, QUAD
• Memory Size: 72Mb (2M x 36)
• Memory Interface: Parallel
• Clock Frequency: 300MHz
• Write Cycle Time - Word, Page: -
• Access Time: 8.4ns
• Voltage - Supply: 1.71 V ~ 1.89 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 165-LBGA
• Supplier Device Package: 165-LFBGA (15x17)

패키지: 165-LBGA

IS61NVP51236B-200B3LI

ISSI, Integrated Silicon Solution Inc

IC SRAM 18MBIT 200MHZ 165BGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous
• Memory Size: 18Mb (512K x 36)
• Memory Interface: Parallel
• Clock Frequency: 200MHz
• Write Cycle Time - Word, Page: -
• Access Time: 3ns
• Voltage - Supply: 2.375 V ~ 2.625 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 165-TBGA
• Supplier Device Package: 165-TFBGA (13x15)

패키지: 165-TBGA

IS45S32800J-6TLA1-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 166MHZ 86TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 256Mb (32M x 8)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 86-TFSOP (0.400", 10.16mm Width)
• Supplier Device Package: 86-TSOP II

패키지: 86-TFSOP (0.400", 10.16mm Width)

IS43LR16320C-6BL-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 166MHZ 60BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile DDR
• Memory Size: 512Mb (32M x 16)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 5.5ns
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 60-TFBGA
• Supplier Device Package: 60-TFBGA (8x10)

패키지: 60-TFBGA

IS62WV25616EALL-55BLI

ISSI, Integrated Silicon Solution Inc

IC SRAM

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 4Mb (256K x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 55ns
• Access Time: 55ns
• Voltage - Supply: 1.65 V ~ 2.2 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

IS43R16160D-5TL

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 200MHZ 66TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR
• Memory Size: 256Mb (16M x 16)
• Memory Interface: Parallel
• Clock Frequency: 200MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 700ps
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 66-TSSOP (0.400", 10.16mm Width)
• Supplier Device Package: 66-TSOP II

패키지: 66-TSSOP (0.400", 10.16mm Width)

IS42S16320F-7BL

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 143MHZ 54BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 512Mb (32M x 16)
• Memory Interface: Parallel
• Clock Frequency: 143MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 54-TFBGA
• Supplier Device Package: 54-TWBGA (13x8)

패키지: 54-TFBGA

IS31SE5104-QFLS2-TR

ISSI, Integrated Silicon Solution Inc

IC TOUCH SENSOR CAP 4CH 16SOIC

• Type: Capacitive Sensor
• Input Type: -
• Output Type: -
• Interface: I2C
• Current - Supply: 173µA
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-WFQFN Exposed Pad
• Supplier Device Package: 16-QFN (3x3)

패키지: 16-WFQFN Exposed Pad

IS61QDPB41M36A1-400B4LI

ISSI, Integrated Silicon Solution Inc

IC SRAM 36M PARALLEL 400MHZ

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous, QUADP
• Memory Size: 36Mb (1M x 36)
• Memory Interface: Parallel
• Clock Frequency: 400MHz
• Write Cycle Time - Word, Page: -
• Access Time: 8.4ns
• Voltage - Supply: 1.71 V ~ 1.89 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 165-TBGA
• Supplier Device Package: 165-TFBGA (13x15)

패키지: 165-TBGA

IS43R16320F-6BL-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 512M PARALLEL 166MHZ

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR
• Memory Size: 512Mb (32M x 16)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 700ps
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 60-TFBGA
• Supplier Device Package: 60-TFBGA (13x8)

패키지: 60-TFBGA

IS61WV2568EDBLL-10BLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 2M PARALLEL 36MBGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 2Mb (256K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 10ns
• Access Time: 10ns
• Voltage - Supply: 2.4 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 36-TFBGA
• Supplier Device Package: 36-TFBGA (6x8)

패키지: 36-TFBGA

IS61NVF102418-6.5B3I

ISSI, Integrated Silicon Solution Inc

IC SRAM 18M PARALLEL 165TFBGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous
• Memory Size: 18Mb (1M x 18)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: -
• Access Time: 6.5ns
• Voltage - Supply: 2.375 V ~ 2.625 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 165-TBGA
• Supplier Device Package: 165-TFBGA (13x15)

패키지: 165-TBGA

IS43LD32128B-25BPLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 4GBIT PARALLEL 168VFBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR2-S4
• Memory Size: 4Gbit
• Memory Interface: Parallel
• Clock Frequency: 400 MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: -
• Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
• Operating Temperature: -40°C ~ 85°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 168-VFBGA
• Supplier Device Package: 168-VFBGA (12x12)

패키지: -

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IS21TF128G-JCLI

ISSI, Integrated Silicon Solution Inc

IC FLASH 1TBIT EMMC 153VFBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND (TLC)
• Memory Size: 1Tbit
• Memory Interface: eMMC_5.1
• Clock Frequency: 200 MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 153-VFBGA
• Supplier Device Package: 153-VFBGA (11.5x13)

패키지: -

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IS43R16320E-6TL-TR

ISSI, Integrated Silicon Solution Inc

512M, 2.5V, DDR 32Mx16, 166MHz,

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR
• Memory Size: 512Mbit
• Memory Interface: SSTL_2
• Clock Frequency: 166 MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 700 ps
• Voltage - Supply: 2.3V ~ 2.7V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 66-TSSOP (0.400", 10.16mm Width)
• Supplier Device Package: 66-TSOP II

패키지: -

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IS46TR81280C-125JBLA25-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 1GBIT PARALLEL 78TWBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR3
• Memory Size: 1Gbit
• Memory Interface: Parallel
• Clock Frequency: 800 MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 20 ns
• Voltage - Supply: 1.425V ~ 1.575V
• Operating Temperature: -40°C ~ 115°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 78-TFBGA
• Supplier Device Package: 78-TWBGA (8x10.5)

패키지: -

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IS46LQ16128A-062TBLA2

ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +105C), 2

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR4
• Memory Size: 2Gbit
• Memory Interface: LVSTL
• Clock Frequency: 1.6 GHz
• Write Cycle Time - Word, Page: 18ns
• Access Time: 3.5 ns
• Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
• Operating Temperature: -40°C ~ 105°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 200-TFBGA
• Supplier Device Package: 200-TFBGA (10x14.5)

패키지: -

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IS43TR16128B-093NBLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 2GBIT PAR 96TWBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR3
• Memory Size: 2Gbit
• Memory Interface: Parallel
• Clock Frequency: 1.066 GHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 20 ns
• Voltage - Supply: 1.425V ~ 1.575V
• Operating Temperature: -40°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 96-TFBGA
• Supplier Device Package: 96-TWBGA (9x13)

패키지: -

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IS46TR16512B-107MBLA1

ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +95C), 8G

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR3
• Memory Size: 8Gbit
• Memory Interface: Parallel
• Clock Frequency: 933 MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 20 ns
• Voltage - Supply: 1.425V ~ 1.575V
• Operating Temperature: -40°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 96-TFBGA
• Supplier Device Package: 96-TWBGA (10x14)

패키지: -

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IS46LQ16256AL-062TBLA1

ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +95C), 4G

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR4X
• Memory Size: 4Gbit
• Memory Interface: LVSTL
• Clock Frequency: 1.6 GHz
• Write Cycle Time - Word, Page: 18ns
• Access Time: 3.5 ns
• Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
• Operating Temperature: -40°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 200-VFBGA
• Supplier Device Package: 200-VFBGA (10x14.5)

패키지: -

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IS25WP064D-JKLE-TR

ISSI, Integrated Silicon Solution Inc

64Mb QPI/QSPI, 8-pin WSON 5X6MM,

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 64Mbit
• Memory Interface: SPI - Quad I/O, QPI, DTR
• Clock Frequency: 166 MHz
• Write Cycle Time - Word, Page: 40µs, 800µs
• Access Time: -
• Voltage - Supply: 1.65V ~ 1.95V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-WDFN Exposed Pad
• Supplier Device Package: 8-WSON (6x5)

패키지: -

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IS43TR16640CL-125JBL

ISSI, Integrated Silicon Solution Inc

IC DRAM 1GBIT PARALLEL 96TWBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR3L
• Memory Size: 1Gbit
• Memory Interface: Parallel
• Clock Frequency: 800 MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 20 ns
• Voltage - Supply: 1.283V ~ 1.45V
• Operating Temperature: 0°C ~ 85°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 96-TFBGA
• Supplier Device Package: 96-TWBGA (9x13)

패키지: -