페이지 81 - IXYS 제품 - 트랜지스터 - FET, MOSFET - 단일

IXFC30N60P

IXYS

MOSFET N-CH 600V 15A ISOPLUS220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3820pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 166W (Tc)
Rds On (Max) @ Id, Vgs: 250 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS220?
Package / Case: ISOPLUS220?

패키지: ISOPLUS220?

재고5,072

MOSFET (Metal Oxide)

600V

15A (Tc)

10V

5V @ 4mA

85nC @ 10V

3820pF @ 25V

±30V

-

166W (Tc)

250 mOhm @ 15A, 10V

-55°C ~ 150°C (TJ)

Through Hole

ISOPLUS220?

IXFV30N60PS

IXYS

MOSFET N-CH 600V 30A PLUS220-SMD

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 240 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PLUS-220SMD
Package / Case: PLUS-220SMD

패키지: PLUS-220SMD

재고3,856

MOSFET (Metal Oxide)

600V

30A (Tc)

10V

5V @ 4mA

82nC @ 10V

4000pF @ 25V

±30V

-

500W (Tc)

240 mOhm @ 15A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PLUS-220SMD

IXFV30N60P

IXYS

MOSFET N-CH 600V 30A PLUS220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 240 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS220
Package / Case: TO-220-3, Short Tab

패키지: TO-220-3, Short Tab

재고6,000

MOSFET (Metal Oxide)

600V

30A (Tc)

10V

5V @ 4mA

82nC @ 10V

4000pF @ 25V

±30V

-

500W (Tc)

240 mOhm @ 15A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PLUS220

TO-220-3, Short Tab

IXFV26N60PS

IXYS

MOSFET N-CH 600V 26A PLUS220-SMD

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 270 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PLUS-220SMD
Package / Case: PLUS-220SMD

패키지: PLUS-220SMD

재고3,280

MOSFET (Metal Oxide)

600V

26A (Tc)

10V

5V @ 4mA

72nC @ 10V

4150pF @ 25V

±30V

-

460W (Tc)

270 mOhm @ 500mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PLUS-220SMD

IXFV26N60P

IXYS

MOSFET N-CH 600V 26A PLUS220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 270 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS220
Package / Case: TO-220-3, Short Tab

패키지: TO-220-3, Short Tab

재고5,280

MOSFET (Metal Oxide)

600V

26A (Tc)

10V

5V @ 4mA

72nC @ 10V

4150pF @ 25V

±30V

-

460W (Tc)

270 mOhm @ 500mA, 10V

-55°C ~ 150°C (TJ)

Through Hole

PLUS220

TO-220-3, Short Tab

IXFC22N60P

IXYS

MOSFET N-CH 600V 12A ISOPLUS220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 360 mOhm @ 11A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS220?
Package / Case: ISOPLUS220?

패키지: ISOPLUS220?

재고4,880

MOSFET (Metal Oxide)

600V

12A (Tc)

10V

5V @ 4mA

58nC @ 10V

4000pF @ 25V

±30V

-

130W (Tc)

360 mOhm @ 11A, 10V

-55°C ~ 150°C (TJ)

Through Hole

ISOPLUS220?

IXFV22N60PS

IXYS

MOSFET N-CH 600V 22A PLUS220-SMD

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 350 mOhm @ 11A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PLUS-220SMD
Package / Case: PLUS-220SMD

패키지: PLUS-220SMD

재고2,912

MOSFET (Metal Oxide)

600V

22A (Tc)

10V

5.5V @ 4mA

58nC @ 10V

3600pF @ 25V

±30V

-

400W (Tc)

350 mOhm @ 11A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PLUS-220SMD

IXFV22N60P

IXYS

MOSFET N-CH 600V 22A PLUS220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 350 mOhm @ 11A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS220
Package / Case: TO-220-3, Short Tab

패키지: TO-220-3, Short Tab

재고6,608

MOSFET (Metal Oxide)

600V

22A (Tc)

10V

5.5V @ 4mA

58nC @ 10V

3600pF @ 25V

±30V

-

400W (Tc)

350 mOhm @ 11A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PLUS220

TO-220-3, Short Tab

IXFV18N60PS

IXYS

MOSFET N-CH 600V 18A PLUS220-SMD

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 400 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PLUS-220SMD
Package / Case: PLUS-220SMD

패키지: PLUS-220SMD

재고4,672

MOSFET (Metal Oxide)

600V

18A (Tc)

10V

5.5V @ 2.5mA

50nC @ 10V

2500pF @ 25V

±30V

-

360W (Tc)

400 mOhm @ 500mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PLUS-220SMD

IXFV18N60P

IXYS

MOSFET N-CH 600V 18A PLUS220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 400 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS220
Package / Case: TO-220-3, Short Tab

패키지: TO-220-3, Short Tab

재고6,624

MOSFET (Metal Oxide)

600V

18A (Tc)

10V

5.5V @ 2.5mA

50nC @ 10V

2500pF @ 25V

±30V

-

360W (Tc)

400 mOhm @ 500mA, 10V

-55°C ~ 150°C (TJ)

Through Hole

PLUS220

TO-220-3, Short Tab

IXFC14N60P

IXYS

MOSFET N-CH 600V 8A ISOPLUS220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 630 mOhm @ 7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS220?
Package / Case: ISOPLUS220?

패키지: ISOPLUS220?

재고5,824

MOSFET (Metal Oxide)

600V

8A (Tc)

10V

5.5V @ 2.5mA

36nC @ 10V

2500pF @ 25V

±30V

-

125W (Tc)

630 mOhm @ 7A, 10V

-55°C ~ 150°C (TJ)

Through Hole

ISOPLUS220?

IXFC36N50P

IXYS

MOSFET N-CH 500V 19A ISOPLUS220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 190 mOhm @ 18A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS220?
Package / Case: ISOPLUS220?

패키지: ISOPLUS220?

재고7,168

MOSFET (Metal Oxide)

500V

19A (Tc)

10V

5V @ 4mA

93nC @ 10V

5500pF @ 25V

±30V

-

156W (Tc)

190 mOhm @ 18A, 10V

-55°C ~ 150°C (TJ)

Through Hole

ISOPLUS220?

IXFV36N50PS

IXYS

MOSFET N-CH 500V 36A PLUS220-SMD

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 540W (Tc)
Rds On (Max) @ Id, Vgs: 170 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PLUS-220SMD
Package / Case: PLUS-220SMD

패키지: PLUS-220SMD

재고5,984

MOSFET (Metal Oxide)

500V

36A (Tc)

10V

5V @ 4mA

93nC @ 10V

5500pF @ 25V

±30V

-

540W (Tc)

170 mOhm @ 500mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PLUS-220SMD

IXFV36N50P

IXYS

MOSFET N-CH 500V 36A PLUS220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 540W (Tc)
Rds On (Max) @ Id, Vgs: 170 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS220
Package / Case: TO-220-3, Short Tab

패키지: TO-220-3, Short Tab

재고7,296

MOSFET (Metal Oxide)

500V

36A (Tc)

10V

5V @ 4mA

93nC @ 10V

5500pF @ 25V

±30V

-

540W (Tc)

170 mOhm @ 500mA, 10V

-55°C ~ 150°C (TJ)

Through Hole

PLUS220

TO-220-3, Short Tab

IXFV30N50PS

IXYS

MOSFET N-CH 500V 30A PLUS220-SMD

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 200 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PLUS-220SMD
Package / Case: PLUS-220SMD

패키지: PLUS-220SMD

재고5,920

MOSFET (Metal Oxide)

500V

30A (Tc)

10V

5V @ 4mA

70nC @ 10V

4150pF @ 25V

±30V

-

460W (Tc)

200 mOhm @ 15A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PLUS-220SMD

IXFV30N50P

IXYS

MOSFET N-CH 500V 30A PLUS220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 200 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS220
Package / Case: TO-220-3, Short Tab

패키지: TO-220-3, Short Tab

재고6,160

MOSFET (Metal Oxide)

500V

30A (Tc)

10V

5V @ 4mA

70nC @ 10V

4150pF @ 25V

±30V

-

460W (Tc)

200 mOhm @ 15A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PLUS220

TO-220-3, Short Tab

IXFC26N50P

IXYS

MOSFET N-CH 500V 15A ISOPLUS220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 260 mOhm @ 13A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS220?
Package / Case: ISOPLUS220?

패키지: ISOPLUS220?

재고2,384

MOSFET (Metal Oxide)

500V

15A (Tc)

10V

5.5V @ 4mA

65nC @ 10V

3600pF @ 25V

±30V

-

130W (Tc)

260 mOhm @ 13A, 10V

-55°C ~ 150°C (TJ)

Through Hole

ISOPLUS220?

IXFV26N50PS

IXYS

MOSFET N-CH 500V 26A PLUS220-SMD

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 230 mOhm @ 13A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PLUS-220SMD
Package / Case: PLUS-220SMD

패키지: PLUS-220SMD

재고6,224

MOSFET (Metal Oxide)

500V

26A (Tc)

10V

5.5V @ 4mA

60nC @ 10V

3600pF @ 25V

±30V

-

400W (Tc)

230 mOhm @ 13A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PLUS-220SMD

IXFV26N50P

IXYS

MOSFET N-CH 500V 26A PLUS220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 230 mOhm @ 13A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS220
Package / Case: TO-220-3, Short Tab

패키지: TO-220-3, Short Tab

재고6,800

MOSFET (Metal Oxide)

500V

26A (Tc)

10V

5.5V @ 4mA

60nC @ 10V

3600pF @ 25V

±30V

-

400W (Tc)

230 mOhm @ 13A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PLUS220

TO-220-3, Short Tab

IXFV22N50PS

IXYS

MOSFET N-CH 500V 22A PLUS220-SMD

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 350W (Tc)
Rds On (Max) @ Id, Vgs: 270 mOhm @ 11A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PLUS-220SMD
Package / Case: PLUS-220SMD

패키지: PLUS-220SMD

재고2,544

MOSFET (Metal Oxide)

500V

22A (Tc)

10V

5.5V @ 2.5mA

50nC @ 10V

2630pF @ 25V

±30V

-

350W (Tc)

270 mOhm @ 11A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PLUS-220SMD

IXFV22N50P

IXYS

MOSFET N-CH 500V 22A PLUS220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 350W (Tc)
Rds On (Max) @ Id, Vgs: 270 mOhm @ 11A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS220
Package / Case: TO-220-3, Short Tab

패키지: TO-220-3, Short Tab

재고2,512

MOSFET (Metal Oxide)

500V

22A (Tc)

10V

5.5V @ 2.5mA

50nC @ 10V

2630pF @ 25V

±30V

-

350W (Tc)

270 mOhm @ 11A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PLUS220

TO-220-3, Short Tab

IXFC16N50P

IXYS

MOSFET N-CH 500V 10A ISOPLUS220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 450 mOhm @ 8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS220?
Package / Case: ISOPLUS220?

패키지: ISOPLUS220?

재고7,312

MOSFET (Metal Oxide)

500V

10A (Tc)

10V

5.5V @ 2.5mA

43nC @ 10V

2250pF @ 25V

±30V

-

125W (Tc)

450 mOhm @ 8A, 10V

-55°C ~ 150°C (TJ)

Through Hole

ISOPLUS220?

IXTV30N60PS

IXYS

MOSFET N-CH 600V 30A PLUS220-SMD

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5050pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 540W (Tc)
Rds On (Max) @ Id, Vgs: 240 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PLUS-220SMD
Package / Case: PLUS-220SMD

패키지: PLUS-220SMD

재고6,016

MOSFET (Metal Oxide)

600V

30A (Tc)

10V

5V @ 250µA

82nC @ 10V

5050pF @ 25V

±30V

-

540W (Tc)

240 mOhm @ 15A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PLUS-220SMD

IXTV30N60P

IXYS

MOSFET N-CH 600V 30A PLUS220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5050pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 540W (Tc)
Rds On (Max) @ Id, Vgs: 240 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS220
Package / Case: TO-220-3, Short Tab

패키지: TO-220-3, Short Tab

재고7,056

MOSFET (Metal Oxide)

600V

30A (Tc)

10V

5V @ 250µA

82nC @ 10V

5050pF @ 25V

±30V

-

540W (Tc)

240 mOhm @ 15A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PLUS220

TO-220-3, Short Tab

IXTV26N60PS

IXYS

MOSFET N-CH 600V 26A PLUS220-SMD

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 270 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PLUS-220SMD
Package / Case: PLUS-220SMD

패키지: PLUS-220SMD

재고4,032

MOSFET (Metal Oxide)

600V

26A (Tc)

10V

5V @ 250µA

72nC @ 10V

4150pF @ 25V

±30V

-

460W (Tc)

270 mOhm @ 500mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PLUS-220SMD

IXTV26N60P

IXYS

MOSFET N-CH 600V 26A PLUS220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 270 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS220
Package / Case: TO-220-3, Short Tab

패키지: TO-220-3, Short Tab

재고5,712

MOSFET (Metal Oxide)

600V

26A (Tc)

10V

5V @ 250µA

72nC @ 10V

4150pF @ 25V

±30V

-

460W (Tc)

270 mOhm @ 500mA, 10V

-55°C ~ 150°C (TJ)

Through Hole

PLUS220

TO-220-3, Short Tab

IXTV22N60PS

IXYS

MOSFET N-CH 600V 22A PLUS220-SMD

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 350 mOhm @ 11A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PLUS-220SMD
Package / Case: PLUS-220SMD

패키지: PLUS-220SMD

재고3,216

MOSFET (Metal Oxide)

600V

22A (Tc)

10V

5.5V @ 250µA

62nC @ 10V

3600pF @ 25V

±30V

-

400W (Tc)

350 mOhm @ 11A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PLUS-220SMD

IXTV22N60P

IXYS

MOSFET N-CH 600V 22A PLUS220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 350 mOhm @ 11A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS220
Package / Case: TO-220-3, Short Tab

패키지: TO-220-3, Short Tab

재고7,792

MOSFET (Metal Oxide)

600V

22A (Tc)

10V

5.5V @ 250µA

62nC @ 10V

3600pF @ 25V

±30V

-

400W (Tc)

350 mOhm @ 11A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PLUS220

TO-220-3, Short Tab