페이지 129 - IXYS 제품 | Heisener Electronics

부품 번호	제조업체	설명	패키지	재고
IXGH35N120B	IXYS	IGBT 1200V 70A 300W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 70A Current - Collector Pulsed (Icm): 140A Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 35A Power - Max: 300W Switching Energy: 3.8mJ (off) Input Type: Standard Gate Charge: 170nC Td (on/off) @ 25°C: 50ns/180ns Test Condition: 960V, 35A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	패키지: TO-247-3	재고7,856
IXBH14N250A	IXYS	IGBT 2500V TO247AD IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 2500V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXBH)	패키지: TO-247-3	재고3,328
IXGT4N250C	IXYS	IGBT 2500V 13A 150W TO268 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 2500V Current - Collector (Ic) (Max): 13A Current - Collector Pulsed (Icm): 46A Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 4A Power - Max: 150W Switching Energy: 360µJ (off) Input Type: Standard Gate Charge: 57nC Td (on/off) @ 25°C: -/350ns Test Condition: 1250V, 4A, 20 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268	패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	재고7,360
MWI60-06G6K	IXYS	MOD IGBT SIX-PACK RBSOA E1 IGBT Type: - Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Power - Max: 180W Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 30A Current - Collector Cutoff (Max): 200µA Input Capacitance (Cies) @ Vce: 2.5nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: E1 Supplier Device Package: E1	패키지: E1	재고4,832
MWI15-12A6K	IXYS	MOD IGBT RBSOA SIXPACK E1 IGBT Type: NPT Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 19A Power - Max: 90W Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A Current - Collector Cutoff (Max): 900µA Input Capacitance (Cies) @ Vce: 0.6nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: E1 Supplier Device Package: E1	패키지: E1	재고7,968
IXFV15N100P	IXYS	MOSFET N-CH 1000V 15A PLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5140pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 543W (Tc) Rds On (Max) @ Id, Vgs: 760 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS220 Package / Case: TO-220-3, Short Tab	패키지: TO-220-3, Short Tab	재고3,232
IXTP220N055T	IXYS	MOSFET N-CH 55V 220A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 158nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 430W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	패키지: TO-220-3	재고6,800
IXFL60N60	IXYS	MOSFET N-CH 600V 60A ISOPLUS264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS264? Package / Case: ISOPLUS264?	패키지: ISOPLUS264?	재고6,624
IXTK110N30	IXYS	MOSFET N-CH 300V 110A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 390nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 730W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (IXTK) Package / Case: TO-264-3, TO-264AA	패키지: TO-264-3, TO-264AA	재고7,824
IXFK20N80Q	IXYS	MOSFET N-CH 800V 20A TO-264AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 420 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	패키지: TO-264-3, TO-264AA	재고5,296
IXTT140P10T	IXYS	MOSFET P-CH 100V 140A TO-268 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 400nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 31400pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 568W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 70A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	재고5,408
IXFT88N30P	IXYS	MOSFET N-CH 300V 88A TO268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 88A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 44A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	재고6,160
IXZ318N50	IXYS	RF MOSFET N-CHANNEL Transistor Type: N-Channel Frequency: - Gain: - Voltage - Test: - Current Rating: 1mA Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: 500V Package / Case: 6-SMD, Flat Lead Exposed Pad Supplier Device Package: -	패키지: 6-SMD, Flat Lead Exposed Pad	재고6,032
IXZ308N120	IXYS	RF MOSFET N-CHANNEL DE375 Transistor Type: N-Channel Frequency: - Gain: - Voltage - Test: - Current Rating: 1mA Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: 1200V Package / Case: 6-SMD, Flat Lead Exposed Pad Supplier Device Package: -	패키지: 6-SMD, Flat Lead Exposed Pad	재고7,776
MCD224-22IO1	IXYS	MOD THYRISTOR/DIODE 2200V Y1-CU Structure: Series Connection - SCR/Diode Number of SCRs, Diodes: 1 SCR, 1 Diode Voltage - Off State: 2200V Current - On State (It (AV)) (Max): 240A Current - On State (It (RMS)) (Max): 400A Voltage - Gate Trigger (Vgt) (Max): 2V Current - Gate Trigger (Igt) (Max): 150mA Current - Non Rep. Surge 50, 60Hz (Itsm): 8000A, 8500A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 140°C (TJ) Mounting Type: Chassis Mount Package / Case: Y1-CU	패키지: Y1-CU	재고2,464
MCC220-14IO1	IXYS	MOD THYRISTOR DUAL 1400V Y2-DCB Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1400V Current - On State (It (AV)) (Max): 250A Current - On State (It (RMS)) (Max): 400A Voltage - Gate Trigger (Vgt) (Max): 2V Current - Gate Trigger (Igt) (Max): 150mA Current - Non Rep. Surge 50, 60Hz (Itsm): 8500A, 9000A Current - Hold (Ih) (Max): 150mA Operating Temperature: -40°C ~ 140°C (TJ) Mounting Type: Chassis Mount Package / Case: Y2-DCB	패키지: Y2-DCB	재고4,288
MCD26-16IO8B	IXYS	MOD THYRISTOR/DIO 1600V TO-240AA Structure: Series Connection - SCR/Diode Number of SCRs, Diodes: 1 SCR, 1 Diode Voltage - Off State: 1600V Current - On State (It (AV)) (Max): 32A Current - On State (It (RMS)) (Max): 50A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 100mA Current - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: TO-240AA	패키지: TO-240AA	재고7,072
DPF120X200NA	IXYS	DIODE MODULE 200V 120A SOT227B Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 120A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B Operating Temperature - Junction: -	패키지: SOT-227-4, miniBLOC	재고6,880
MDD72-08N1B	IXYS	DIODE MODULE 800V 113A TO240AA Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io) (per Diode): 113A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 300A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 15mA @ 800V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: TO-240AA Supplier Device Package: TO-240AA	패키지: TO-240AA	재고3,472
GUO40-16NO1	IXYS	3-PHASE BRIDGE RECT 1600V 40A Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 1600V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.28V @ 30A Current - Reverse Leakage @ Vr: 40µA @ 1600V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: 5-SIP Supplier Device Package: 5-SIP	패키지: 5-SIP	재고3,776
IXCP60M35	IXYS	IC CURRENT REGULATOR TO220AB Function: Current Regulator Sensing Method: - Accuracy: - Voltage - Input: - Current - Output: 60mA Operating Temperature: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고3,312
DMA30P1200HB	IXYS	DIODE GEN PURP 1.2KV 30A TO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40 µA @ 1200 V Capacitance @ Vr, F: 11pF @ 400V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 (IXTH) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote
MCNA180PD2200YB	IXYS	BIPOLAR MODULE - THYRISTOR Y4-M Structure: Series Connection - SCR/Diode Number of SCRs, Diodes: 1 SCR, 1 Diode Voltage - Off State: 2.2 kV Current - On State (It (AV)) (Max): 180 A Current - On State (It (RMS)) (Max): 280 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 5400A, 5830A Current - Hold (Ih) (Max): 200 mA Operating Temperature: -40°C ~ 140°C (TJ) Mounting Type: Chassis Mount Package / Case: Y4-M6	패키지: -	재고9
R1446NC12E	IXYS	SCR 1.2KV 2940A W11 Voltage - Off State: 1.2 kV Voltage - Gate Trigger (Vgt) (Max): 3 V Current - Gate Trigger (Igt) (Max): 300 mA Voltage - On State (Vtm) (Max): 1.7 V Current - On State (It (AV)) (Max): 1446 A Current - On State (It (RMS)) (Max): 2940 A Current - Hold (Ih) (Max): 1 A Current - Off State (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 21500A @ 50Hz SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Mounting Type: Clamp On Package / Case: TO-200AC, K-PUK Supplier Device Package: W11	패키지: -	Request a Quote
MCMA240UI1600ED	IXYS	SCR MODULE 1.6KV 240A E2 PACK Structure: Series Connection - SCR/Diode Number of SCRs, Diodes: 3 SCRs, 3 Diodes Voltage - Off State: 1.6 kV Current - On State (It (AV)) (Max): 240 A Current - On State (It (RMS)) (Max): 200 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Current - Gate Trigger (Igt) (Max): 95 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1620A Current - Hold (Ih) (Max): 200 mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: E2	패키지: -	Request a Quote
IXGP28N60A3	IXYS	IGBT IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 75 A Current - Collector Pulsed (Icm): 170 A Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 24A Power - Max: 190 W Switching Energy: 700µJ (on), 2.4mJ (off) Input Type: Standard Gate Charge: 66 nC Td (on/off) @ 25°C: 18ns/300ns Test Condition: 480V, 24A, 10Ohm, 15V Reverse Recovery Time (trr): 26 ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	패키지: -	재고90
MDMA360UB1600PTED	IXYS	BIPOLARMODULE-RECTIFIER+BRAKE E2 Diode Type: Three Phase (Braking) Technology: Standard Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 360 A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 360 A Current - Reverse Leakage @ Vr: 100 µA @ 1600 V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: E2 Supplier Device Package: E2	패키지: -	Request a Quote
DPG30IM400PC-TRL	IXYS	DIODE GEN PURP 400V 30A TO263 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: 32pF @ 200V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote

IXGH35N120B

IXYS

IGBT 1200V 70A 300W TO247

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 70A
Current - Collector Pulsed (Icm): 140A
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 35A
Power - Max: 300W
Switching Energy: 3.8mJ (off)
Input Type: Standard
Gate Charge: 170nC
Td (on/off) @ 25°C: 50ns/180ns
Test Condition: 960V, 35A, 5 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXGH)

패키지: TO-247-3

재고7,856

IXBH14N250A

IXYS

IGBT 2500V TO247AD

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 2500V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXBH)

패키지: TO-247-3

재고3,328

IXGT4N250C

IXYS

IGBT 2500V 13A 150W TO268

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 2500V
Current - Collector (Ic) (Max): 13A
Current - Collector Pulsed (Icm): 46A
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 4A
Power - Max: 150W
Switching Energy: 360µJ (off)
Input Type: Standard
Gate Charge: 57nC
Td (on/off) @ 25°C: -/350ns
Test Condition: 1250V, 4A, 20 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268

패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

재고7,360

MWI60-06G6K

IXYS

MOD IGBT SIX-PACK RBSOA E1

IGBT Type: -
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 60A
Power - Max: 180W
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 30A
Current - Collector Cutoff (Max): 200µA
Input Capacitance (Cies) @ Vce: 2.5nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: E1
Supplier Device Package: E1

패키지: E1

재고4,832

MWI15-12A6K

IXYS

MOD IGBT RBSOA SIXPACK E1

IGBT Type: NPT
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 19A
Power - Max: 90W
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
Current - Collector Cutoff (Max): 900µA
Input Capacitance (Cies) @ Vce: 0.6nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: E1
Supplier Device Package: E1

패키지: E1

재고7,968

IXFV15N100P

IXYS

MOSFET N-CH 1000V 15A PLUS220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5140pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 543W (Tc)
Rds On (Max) @ Id, Vgs: 760 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS220
Package / Case: TO-220-3, Short Tab

패키지: TO-220-3, Short Tab

재고3,232

IXTP220N055T

IXYS

MOSFET N-CH 55V 220A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 158nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 430W (Tc)
Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

패키지: TO-220-3

재고6,800

IXFL60N60

IXYS

MOSFET N-CH 600V 60A ISOPLUS264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 700W (Tc)
Rds On (Max) @ Id, Vgs: 80 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS264?
Package / Case: ISOPLUS264?

패키지: ISOPLUS264?

재고6,624

IXTK110N30

IXYS

MOSFET N-CH 300V 110A TO-264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 390nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7800pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 730W (Tc)
Rds On (Max) @ Id, Vgs: 26 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264 (IXTK)
Package / Case: TO-264-3, TO-264AA

패키지: TO-264-3, TO-264AA

재고7,824

IXFK20N80Q

IXYS

MOSFET N-CH 800V 20A TO-264AA

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 420 mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264AA (IXFK)
Package / Case: TO-264-3, TO-264AA

패키지: TO-264-3, TO-264AA

재고5,296

IXTT140P10T

IXYS

MOSFET P-CH 100V 140A TO-268

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 400nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 31400pF @ 25V
Vgs (Max): ±15V
FET Feature: -
Power Dissipation (Max): 568W (Tc)
Rds On (Max) @ Id, Vgs: 12 mOhm @ 70A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

재고5,408

IXFT88N30P

IXYS

MOSFET N-CH 300V 88A TO268

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 40 mOhm @ 44A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

재고6,160

IXZ318N50

IXYS

RF MOSFET N-CHANNEL

Transistor Type: N-Channel
Frequency: -
Gain: -
Voltage - Test: -
Current Rating: 1mA
Noise Figure: -
Current - Test: -
Power - Output: -
Voltage - Rated: 500V
Package / Case: 6-SMD, Flat Lead Exposed Pad
Supplier Device Package: -

패키지: 6-SMD, Flat Lead Exposed Pad

재고6,032

IXZ308N120

IXYS

RF MOSFET N-CHANNEL DE375

Transistor Type: N-Channel
Frequency: -
Gain: -
Voltage - Test: -
Current Rating: 1mA
Noise Figure: -
Current - Test: -
Power - Output: -
Voltage - Rated: 1200V
Package / Case: 6-SMD, Flat Lead Exposed Pad
Supplier Device Package: -

패키지: 6-SMD, Flat Lead Exposed Pad

재고7,776

MCD224-22IO1

IXYS

MOD THYRISTOR/DIODE 2200V Y1-CU

Structure: Series Connection - SCR/Diode
Number of SCRs, Diodes: 1 SCR, 1 Diode
Voltage - Off State: 2200V
Current - On State (It (AV)) (Max): 240A
Current - On State (It (RMS)) (Max): 400A
Voltage - Gate Trigger (Vgt) (Max): 2V
Current - Gate Trigger (Igt) (Max): 150mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8000A, 8500A
Current - Hold (Ih) (Max): 200mA
Operating Temperature: -40°C ~ 140°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Y1-CU

패키지: Y1-CU

재고2,464

MCC220-14IO1

IXYS

MOD THYRISTOR DUAL 1400V Y2-DCB

Structure: Series Connection - All SCRs
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 1400V
Current - On State (It (AV)) (Max): 250A
Current - On State (It (RMS)) (Max): 400A
Voltage - Gate Trigger (Vgt) (Max): 2V
Current - Gate Trigger (Igt) (Max): 150mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8500A, 9000A
Current - Hold (Ih) (Max): 150mA
Operating Temperature: -40°C ~ 140°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Y2-DCB

패키지: Y2-DCB

재고4,288

MCD26-16IO8B

IXYS

MOD THYRISTOR/DIO 1600V TO-240AA

Structure: Series Connection - SCR/Diode
Number of SCRs, Diodes: 1 SCR, 1 Diode
Voltage - Off State: 1600V
Current - On State (It (AV)) (Max): 32A
Current - On State (It (RMS)) (Max): 50A
Voltage - Gate Trigger (Vgt) (Max): 1.5V
Current - Gate Trigger (Igt) (Max): 100mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560A
Current - Hold (Ih) (Max): 200mA
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-240AA

패키지: TO-240AA

재고7,072

DPF120X200NA

IXYS

DIODE MODULE 200V 120A SOT227B

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 120A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -

패키지: SOT-227-4, miniBLOC

재고6,880

MDD72-08N1B

IXYS

DIODE MODULE 800V 113A TO240AA

Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io) (per Diode): 113A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 300A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 15mA @ 800V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: TO-240AA
Supplier Device Package: TO-240AA

패키지: TO-240AA

재고3,472

GUO40-16NO1

IXYS

3-PHASE BRIDGE RECT 1600V 40A

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1600V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.28V @ 30A
Current - Reverse Leakage @ Vr: 40µA @ 1600V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: 5-SIP
Supplier Device Package: 5-SIP

패키지: 5-SIP

재고3,776

IXCP60M35

IXYS

IC CURRENT REGULATOR TO220AB

Function: Current Regulator
Sensing Method: -
Accuracy: -
Voltage - Input: -
Current - Output: 60mA
Operating Temperature: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고3,312

DMA30P1200HB

IXYS

DIODE GEN PURP 1.2KV 30A TO247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
Capacitance @ Vr, F: 11pF @ 400V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXTH)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

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MCNA180PD2200YB

IXYS

BIPOLAR MODULE - THYRISTOR Y4-M

Structure: Series Connection - SCR/Diode
Number of SCRs, Diodes: 1 SCR, 1 Diode
Voltage - Off State: 2.2 kV
Current - On State (It (AV)) (Max): 180 A
Current - On State (It (RMS)) (Max): 280 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5400A, 5830A
Current - Hold (Ih) (Max): 200 mA
Operating Temperature: -40°C ~ 140°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Y4-M6

패키지: -

재고9

R1446NC12E

IXYS

SCR 1.2KV 2940A W11

Voltage - Off State: 1.2 kV
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - Gate Trigger (Igt) (Max): 300 mA
Voltage - On State (Vtm) (Max): 1.7 V
Current - On State (It (AV)) (Max): 1446 A
Current - On State (It (RMS)) (Max): 2940 A
Current - Hold (Ih) (Max): 1 A
Current - Off State (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21500A @ 50Hz
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Mounting Type: Clamp On
Package / Case: TO-200AC, K-PUK
Supplier Device Package: W11

패키지: -

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MCMA240UI1600ED

IXYS

SCR MODULE 1.6KV 240A E2 PACK

Structure: Series Connection - SCR/Diode
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Off State: 1.6 kV
Current - On State (It (AV)) (Max): 240 A
Current - On State (It (RMS)) (Max): 200 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1620A
Current - Hold (Ih) (Max): 200 mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: E2

패키지: -

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IXGP28N60A3

IXYS

IGBT

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 75 A
Current - Collector Pulsed (Icm): 170 A
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 24A
Power - Max: 190 W
Switching Energy: 700µJ (on), 2.4mJ (off)
Input Type: Standard
Gate Charge: 66 nC
Td (on/off) @ 25°C: 18ns/300ns
Test Condition: 480V, 24A, 10Ohm, 15V
Reverse Recovery Time (trr): 26 ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

패키지: -

재고90

MDMA360UB1600PTED

IXYS

BIPOLARMODULE-RECTIFIER+BRAKE E2

Diode Type: Three Phase (Braking)
Technology: Standard
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 360 A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 360 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: E2
Supplier Device Package: E2

패키지: -

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DPG30IM400PC-TRL

IXYS

DIODE GEN PURP 400V 30A TO263

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 30 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Capacitance @ Vr, F: 32pF @ 200V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

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