페이지 17 - IXYS 제품 | Heisener Electronics

부품 번호	제조업체	설명	패키지	재고
IXGH72N60B3	IXYS	IGBT 600V 75A 540W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 400A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A Power - Max: 540W Switching Energy: 1.38mJ (on), 1.05mJ (off) Input Type: Standard Gate Charge: 230nC Td (on/off) @ 25°C: 31ns/150ns Test Condition: 480V, 50A, 3 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	패키지: TO-247-3	재고6,080
IXA4IF1200UC	IXYS	IGBT 1200V 9A 45W TO252AA IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 9A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A Power - Max: 45W Switching Energy: 400µJ (on), 300µJ (off) Input Type: Standard Gate Charge: 12nC Td (on/off) @ 25°C: - Test Condition: 600V, 3A, 330 Ohm, 15V Reverse Recovery Time (trr): 350ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252, (D-Pak)	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고2,896
IXGP20N120A3	IXYS	IGBT 1200V 40A 180W TO220 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Power - Max: 180W Switching Energy: 2.85mJ (on), 6.47mJ (off) Input Type: Standard Gate Charge: 50nC Td (on/off) @ 25°C: 16ns/290ns Test Condition: 960V, 20A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고5,408
IXGN100N170	IXYS	IGBT 1700V 160A GENX3 SOT-227B IGBT Type: NPT Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 160A Power - Max: 735W Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A Current - Collector Cutoff (Max): 50µA Input Capacitance (Cies) @ Vce: 9.22nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B	패키지: SOT-227-4, miniBLOC	재고6,592
IXA20PG1200DHGLB	IXYS	IGBT MODULE 1200V 105A SMPD IGBT Type: PT Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 32A Power - Max: 130W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Current - Collector Cutoff (Max): 125µA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 9-SMD Module Supplier Device Package: ISOPLUS-SMPD?.B	패키지: 9-SMD Module	재고7,888
IXTX4N300P3HV	IXYS	2000V TO 3000V POLAR3 POWER MOSF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 3000V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960W (Tc) Rds On (Max) @ Id, Vgs: 12.5 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247HV Package / Case: TO-247-3 Variant	패키지: TO-247-3 Variant	재고6,544
IXTT60N10	IXYS	MOSFET N-CH 100V 60A TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	재고2,768
IXFP76N15T2	IXYS	MOSFET N-CH 150V 76A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 38A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	패키지: TO-220-3	재고2,624
IXTT40N50L2	IXYS	MOSFET N-CH 500V 40A TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 540W (Tc) Rds On (Max) @ Id, Vgs: 170 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	재고3,552
275-501N16A-00	IXYS	RF MOSFET N-CHANNEL DE275 Transistor Type: N-Channel Frequency: 100MHz Gain: - Voltage - Test: - Current Rating: 1mA Noise Figure: - Current - Test: - Power - Output: 590W Voltage - Rated: 500V Package / Case: 6-SMD, Flat Lead Exposed Pad Supplier Device Package: DE275	패키지: 6-SMD, Flat Lead Exposed Pad	재고7,440
CS30-14IO1	IXYS	THYRISTOR PHASE 1400V TO-247AD Voltage - Off State: 1400V Voltage - Gate Trigger (Vgt) (Max): 1V Current - Gate Trigger (Igt) (Max): 55mA Voltage - On State (Vtm) (Max): 1.63V Current - On State (It (AV)) (Max): 30A Current - On State (It (RMS)) (Max): 49A Current - Hold (Ih) (Max): 100mA Current - Off State (Max): 50µA Current - Non Rep. Surge 50, 60Hz (Itsm): 400A, 430A SCR Type: Standard Recovery Operating Temperature: -40°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Supplier Device Package: TO-247AD	패키지: TO-3P-3 Full Pack	재고7,088
MCC501-16IO2	IXYS	SCR THY PHASE LEG 1600V WC-501 Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1600V Current - On State (It (AV)) (Max): - Current - On State (It (RMS)) (Max): - Voltage - Gate Trigger (Vgt) (Max): - Current - Gate Trigger (Igt) (Max): - Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz Current - Hold (Ih) (Max): - Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: WC-501	패키지: WC-501	재고6,208
MCD95-18IO1B	IXYS	MOD THYRISTOR/DIO 1800V TO-240AA Structure: Series Connection - SCR/Diode Number of SCRs, Diodes: 1 SCR, 1 Diode Voltage - Off State: 1800V Current - On State (It (AV)) (Max): 116A Current - On State (It (RMS)) (Max): 180A Voltage - Gate Trigger (Vgt) (Max): 2.5V Current - Gate Trigger (Igt) (Max): 150mA Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: TO-240AA	패키지: TO-240AA	재고5,840
MCD72-16IO8B	IXYS	MOD THYRISTOR/DIO 1600V TO-240AA Structure: Series Connection - SCR/Diode Number of SCRs, Diodes: 1 SCR, 1 Diode Voltage - Off State: 1600V Current - On State (It (AV)) (Max): 115A Current - On State (It (RMS)) (Max): 180A Voltage - Gate Trigger (Vgt) (Max): 2.5V Current - Gate Trigger (Igt) (Max): 150mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1700A, 1800A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: TO-240AA	패키지: TO-240AA	재고3,808
MCMA35P1600TA	IXYS	MOD THYRISTOR DUAL 16KV TO-240 Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1600V Current - On State (It (AV)) (Max): 35A Current - On State (It (RMS)) (Max): 55A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 78mA Current - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 140°C (TJ) Mounting Type: Chassis Mount Package / Case: TO-240AA	패키지: TO-240AA	재고7,408
DSA2-12A	IXYS	DIODE AVALANCHE 1200V 3.6A AXIAL Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 3.6A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 7A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: Axial Operating Temperature - Junction: -40°C ~ 180°C	패키지: Axial	재고5,040
DPG60I400HA	IXYS	DIODE GEN PURP 400V 60A TO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.47V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45ns Current - Reverse Leakage @ Vr: 1µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-247-2	재고7,664
DSEP12-12B	IXYS	DIODE GEN PURP 1.2KV 15A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 3.25V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-220-2	재고5,632
VUB116-16NOXT	IXYS	DIODE BRIDGE 1600V 120A Diode Type: Three Phase (Braking) Technology: Standard Voltage - Peak Reverse (Max): 1600V Current - Average Rectified (Io): 120A Voltage - Forward (Vf) (Max) @ If: 2.76V @ 30A Current - Reverse Leakage @ Vr: 100µA @ 1600V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: Module	재고3,376
VBO130-18NO7	IXYS	DIODE BRIDGE 122A 1800V FO-A Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1800V Current - Average Rectified (Io): 122A Voltage - Forward (Vf) (Max) @ If: 1.65V @ 300A Current - Reverse Leakage @ Vr: 300µA @ 1800V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: PWS-E Supplier Device Package: PWS-E	패키지: PWS-E	재고3,952
VBO78-12NO7	IXYS	DIODE BRIDGE 1200V 76A ECO-PAC2 Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1200V Current - Average Rectified (Io): 78A Voltage - Forward (Vf) (Max) @ If: 1.14V @ 40A Current - Reverse Leakage @ Vr: 100µA @ 1200V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: ECO-PAC2 Supplier Device Package: ECO-PAC2	패키지: ECO-PAC2	재고5,088
DLA100B1200LB-TRR	IXYS	RECT BRIDGE 1200V 132A DPAK Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1200V Current - Average Rectified (Io): 132A Voltage - Forward (Vf) (Max) @ If: - Current - Reverse Leakage @ Vr: 10µA @ 1200V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 9-SMD Module Supplier Device Package: ISOPLUS-SMPD?.B	패키지: 9-SMD Module	재고2,432
IXCY20M35	IXYS	IC CURRENT REGULATOR DPAK Function: Current Regulator Sensing Method: - Accuracy: - Voltage - Input: - Current - Output: 20mA Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고2,240
IXBOD1-08	IXYS	IC SGL DIODE BOD 0.9A 800V FP Voltage - Clamping: 800V Technology: Mixed Technology Number of Circuits: 1 Number of Circuits: 1 Applications: High Voltage Mounting Type: Through Hole Package / Case: Radial Supplier Device Package: FP-Case	패키지: Radial	재고7,704
IXTY48P05T-TRL	IXYS	MOSFET P-CH 50V 48A TO252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 24A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	패키지: -	Request a Quote
MIXG240RF1200PTED	IXYS	IGBT MODULE - BRAKE E2-PACK-PFP IGBT Type: PT Configuration: Single Chopper Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 335 A Power - Max: 1250 W Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 200A Current - Collector Cutoff (Max): 200 µA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: E2 Supplier Device Package: E2	패키지: -	Request a Quote
MCD162-16IO1B	IXYS	BIPOLAR MODULE-THYRISTOR/DIODE Y Structure: Series Connection - SCR/Diode Number of SCRs, Diodes: 1 SCR, 1 Diode Voltage - Off State: 1.6 kV Current - On State (It (AV)) (Max): 181 A Current - On State (It (RMS)) (Max): 300 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6480A Current - Hold (Ih) (Max): 200 mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: Y4-M6	패키지: -	Request a Quote
IXA4IF1200TC-TUB	IXYS	IGBT PT 1200V 9A TO268AA IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 9 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A Power - Max: 45 W Switching Energy: 400µJ (on), 300µJ (off) Input Type: Standard Gate Charge: 12 nC Td (on/off) @ 25°C: - Test Condition: 600V, 3A, 330Ohm, 15V Reverse Recovery Time (trr): 350 ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268AA	패키지: -	Request a Quote

IXGH72N60B3

IXYS

IGBT 600V 75A 540W TO247

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 400A
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A
Power - Max: 540W
Switching Energy: 1.38mJ (on), 1.05mJ (off)
Input Type: Standard
Gate Charge: 230nC
Td (on/off) @ 25°C: 31ns/150ns
Test Condition: 480V, 50A, 3 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXGH)

패키지: TO-247-3

재고6,080

IXA4IF1200UC

IXYS

IGBT 1200V 9A 45W TO252AA

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 9A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
Power - Max: 45W
Switching Energy: 400µJ (on), 300µJ (off)
Input Type: Standard
Gate Charge: 12nC
Td (on/off) @ 25°C: -
Test Condition: 600V, 3A, 330 Ohm, 15V
Reverse Recovery Time (trr): 350ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고2,896

IXGP20N120A3

IXYS

IGBT 1200V 40A 180W TO220

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Power - Max: 180W
Switching Energy: 2.85mJ (on), 6.47mJ (off)
Input Type: Standard
Gate Charge: 50nC
Td (on/off) @ 25°C: 16ns/290ns
Test Condition: 960V, 20A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고5,408

IXGN100N170

IXYS

IGBT 1700V 160A GENX3 SOT-227B

IGBT Type: NPT
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 160A
Power - Max: 735W
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
Current - Collector Cutoff (Max): 50µA
Input Capacitance (Cies) @ Vce: 9.22nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B

패키지: SOT-227-4, miniBLOC

재고6,592

IXA20PG1200DHGLB

IXYS

IGBT MODULE 1200V 105A SMPD

IGBT Type: PT
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 32A
Power - Max: 130W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Current - Collector Cutoff (Max): 125µA
Input Capacitance (Cies) @ Vce: -
Input: Standard
NTC Thermistor: No
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-SMD Module
Supplier Device Package: ISOPLUS-SMPD?.B

패키지: 9-SMD Module

재고7,888

IXTX4N300P3HV

IXYS

2000V TO 3000V POLAR3 POWER MOSF

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 3000V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 960W (Tc)
Rds On (Max) @ Id, Vgs: 12.5 Ohm @ 2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247HV
Package / Case: TO-247-3 Variant

패키지: TO-247-3 Variant

재고6,544

IXTT60N10

IXYS

MOSFET N-CH 100V 60A TO-268

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 20 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

재고2,768

IXFP76N15T2

IXYS

MOSFET N-CH 150V 76A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 350W (Tc)
Rds On (Max) @ Id, Vgs: 20 mOhm @ 38A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

패키지: TO-220-3

재고2,624

IXTT40N50L2

IXYS

MOSFET N-CH 500V 40A TO-268

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 540W (Tc)
Rds On (Max) @ Id, Vgs: 170 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

재고3,552

275-501N16A-00

IXYS

RF MOSFET N-CHANNEL DE275

Transistor Type: N-Channel
Frequency: 100MHz
Gain: -
Voltage - Test: -
Current Rating: 1mA
Noise Figure: -
Current - Test: -
Power - Output: 590W
Voltage - Rated: 500V
Package / Case: 6-SMD, Flat Lead Exposed Pad
Supplier Device Package: DE275

패키지: 6-SMD, Flat Lead Exposed Pad

재고7,440

CS30-14IO1

IXYS

THYRISTOR PHASE 1400V TO-247AD

Voltage - Off State: 1400V
Voltage - Gate Trigger (Vgt) (Max): 1V
Current - Gate Trigger (Igt) (Max): 55mA
Voltage - On State (Vtm) (Max): 1.63V
Current - On State (It (AV)) (Max): 30A
Current - On State (It (RMS)) (Max): 49A
Current - Hold (Ih) (Max): 100mA
Current - Off State (Max): 50µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 400A, 430A
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Supplier Device Package: TO-247AD

패키지: TO-3P-3 Full Pack

재고7,088

MCC501-16IO2

IXYS

SCR THY PHASE LEG 1600V WC-501

Structure: Series Connection - All SCRs
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 1600V
Current - On State (It (AV)) (Max): -
Current - On State (It (RMS)) (Max): -
Voltage - Gate Trigger (Vgt) (Max): -
Current - Gate Trigger (Igt) (Max): -
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Current - Hold (Ih) (Max): -
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: WC-501

패키지: WC-501

재고6,208

MCD95-18IO1B

IXYS

MOD THYRISTOR/DIO 1800V TO-240AA

Structure: Series Connection - SCR/Diode
Number of SCRs, Diodes: 1 SCR, 1 Diode
Voltage - Off State: 1800V
Current - On State (It (AV)) (Max): 116A
Current - On State (It (RMS)) (Max): 180A
Voltage - Gate Trigger (Vgt) (Max): 2.5V
Current - Gate Trigger (Igt) (Max): 150mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A
Current - Hold (Ih) (Max): 200mA
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-240AA

패키지: TO-240AA

재고5,840

MCD72-16IO8B

IXYS

MOD THYRISTOR/DIO 1600V TO-240AA

Structure: Series Connection - SCR/Diode
Number of SCRs, Diodes: 1 SCR, 1 Diode
Voltage - Off State: 1600V
Current - On State (It (AV)) (Max): 115A
Current - On State (It (RMS)) (Max): 180A
Voltage - Gate Trigger (Vgt) (Max): 2.5V
Current - Gate Trigger (Igt) (Max): 150mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1700A, 1800A
Current - Hold (Ih) (Max): 200mA
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-240AA

패키지: TO-240AA

재고3,808

MCMA35P1600TA

IXYS

MOD THYRISTOR DUAL 16KV TO-240

Structure: Series Connection - All SCRs
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 1600V
Current - On State (It (AV)) (Max): 35A
Current - On State (It (RMS)) (Max): 55A
Voltage - Gate Trigger (Vgt) (Max): 1.5V
Current - Gate Trigger (Igt) (Max): 78mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560A
Current - Hold (Ih) (Max): 200mA
Operating Temperature: -40°C ~ 140°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-240AA

패키지: TO-240AA

재고7,408

DSA2-12A

IXYS

DIODE AVALANCHE 1200V 3.6A AXIAL

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 3.6A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 7A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 180°C

패키지: Axial

재고5,040

DPG60I400HA

IXYS

DIODE GEN PURP 400V 60A TO247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 1.47V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45ns
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-247-2

재고7,664

DSEP12-12B

IXYS

DIODE GEN PURP 1.2KV 15A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 3.25V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-220-2

재고5,632

VUB116-16NOXT

IXYS

DIODE BRIDGE 1600V 120A

Diode Type: Three Phase (Braking)
Technology: Standard
Voltage - Peak Reverse (Max): 1600V
Current - Average Rectified (Io): 120A
Voltage - Forward (Vf) (Max) @ If: 2.76V @ 30A
Current - Reverse Leakage @ Vr: 100µA @ 1600V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: Module

재고3,376

VBO130-18NO7

IXYS

DIODE BRIDGE 122A 1800V FO-A

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1800V
Current - Average Rectified (Io): 122A
Voltage - Forward (Vf) (Max) @ If: 1.65V @ 300A
Current - Reverse Leakage @ Vr: 300µA @ 1800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: PWS-E
Supplier Device Package: PWS-E

패키지: PWS-E

재고3,952

VBO78-12NO7

IXYS

DIODE BRIDGE 1200V 76A ECO-PAC2

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1200V
Current - Average Rectified (Io): 78A
Voltage - Forward (Vf) (Max) @ If: 1.14V @ 40A
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ECO-PAC2
Supplier Device Package: ECO-PAC2

패키지: ECO-PAC2

재고5,088

DLA100B1200LB-TRR

IXYS

RECT BRIDGE 1200V 132A DPAK

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1200V
Current - Average Rectified (Io): 132A
Voltage - Forward (Vf) (Max) @ If: -
Current - Reverse Leakage @ Vr: 10µA @ 1200V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-SMD Module
Supplier Device Package: ISOPLUS-SMPD?.B

패키지: 9-SMD Module

재고2,432

IXCY20M35

IXYS

IC CURRENT REGULATOR DPAK

Function: Current Regulator
Sensing Method: -
Accuracy: -
Voltage - Input: -
Current - Output: 20mA
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고2,240

IXBOD1-08

IXYS

IC SGL DIODE BOD 0.9A 800V FP

Voltage - Clamping: 800V
Technology: Mixed Technology
Number of Circuits: 1
Number of Circuits: 1
Applications: High Voltage
Mounting Type: Through Hole
Package / Case: Radial
Supplier Device Package: FP-Case

패키지: Radial

재고7,704

IXTY48P05T-TRL

IXYS

MOSFET P-CH 50V 48A TO252

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 50 V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
Vgs (Max): ±15V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 24A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

패키지: -

Request a Quote

MIXG240RF1200PTED

IXYS

IGBT MODULE - BRAKE E2-PACK-PFP

IGBT Type: PT
Configuration: Single Chopper
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 335 A
Power - Max: 1250 W
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 200A
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: -
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: E2
Supplier Device Package: E2

패키지: -

Request a Quote

MCD162-16IO1B

IXYS

BIPOLAR MODULE-THYRISTOR/DIODE Y

Structure: Series Connection - SCR/Diode
Number of SCRs, Diodes: 1 SCR, 1 Diode
Voltage - Off State: 1.6 kV
Current - On State (It (AV)) (Max): 181 A
Current - On State (It (RMS)) (Max): 300 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6480A
Current - Hold (Ih) (Max): 200 mA
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Y4-M6

패키지: -

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IXA4IF1200TC-TUB

IXYS

IGBT PT 1200V 9A TO268AA

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 9 A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
Power - Max: 45 W
Switching Energy: 400µJ (on), 300µJ (off)
Input Type: Standard
Gate Charge: 12 nC
Td (on/off) @ 25°C: -
Test Condition: 600V, 3A, 330Ohm, 15V
Reverse Recovery Time (trr): 350 ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268AA

패키지: -

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