페이지 173 - IXYS 제품 | Heisener Electronics

부품 번호	제조업체	설명	패키지	재고
IXGQ150N30TC	IXYS	IGBT 300V 150A TO3P IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 300V Current - Collector (Ic) (Max): 150A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	패키지: TO-3P-3, SC-65-3	재고6,864
IXXX300N60C3	IXYS	IGBT 600V 510A 2300W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 510A Current - Collector Pulsed (Icm): 1075A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A Power - Max: 2300W Switching Energy: 3.35mJ (on), 1.9mJ (off) Input Type: Standard Gate Charge: 438nC Td (on/off) @ 25°C: 50ns/160ns Test Condition: 400V, 100A, 1 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PLUS247?-3	패키지: TO-247-3	재고2,640
IXGX82N120B3	IXYS	IGBT 1200V 230A 1250W PLUS247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 230A Current - Collector Pulsed (Icm): 500A Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A Power - Max: 1250W Switching Energy: 5mJ (on), 3.3mJ (off) Input Type: Standard Gate Charge: 350nC Td (on/off) @ 25°C: 30ns/210ns Test Condition: 600V, 80A, 2 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PLUS247?-3	패키지: TO-247-3	재고2,400
IXYX140N90C3	IXYS	IGBT 900V 310A 1630W TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 900V Current - Collector (Ic) (Max): 310A Current - Collector Pulsed (Icm): 840A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 140A Power - Max: 1630W Switching Energy: 4.3mJ (on), 4mJ (off) Input Type: Standard Gate Charge: 330nC Td (on/off) @ 25°C: 40ns/145ns Test Condition: 450V, 100A, 1 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PLUS247?-3	패키지: TO-247-3	재고7,632
IXGN100N160A	IXYS	IGBT 200A 1600V SOT-227B IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1600V Current - Collector (Ic) (Max): 200A Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: - Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B	패키지: SOT-227-4, miniBLOC	재고5,088
IXFH70N15	IXYS	MOSFET N-CH 150V 70A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 28 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	패키지: TO-247-3	재고4,288
IXFR200N10P	IXYS	MOSFET N-CH 100V 133A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 133A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 235nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	패키지: ISOPLUS247?	재고2,288
IXFK80N20Q	IXYS	MOSFET N-CH 200V 80A TO-264AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 28 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	패키지: TO-264-3, TO-264AA	재고5,840
IXFH12N80P	IXYS	MOSFET N-CH 800V 12A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	패키지: TO-247-3	재고3,920
IXFN110N85X	IXYS	850V/110A ULT JUNCT X-CLASS HIPE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 850V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 425nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 17000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1170W (Tc) Rds On (Max) @ Id, Vgs: 33 mOhm @ 55A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	패키지: SOT-227-4, miniBLOC	재고4,208
IXTA05N100HV	IXYS	MOSFET N-CH 1KV 750MA TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 750mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 17 Ohm @ 375mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고7,744
IXFN120N20	IXYS	MOSFET N-CH 200V 120A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 120A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 17 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	패키지: SOT-227-4, miniBLOC	재고4,624
GWM120-0075X1-SMD	IXYS	MOSFET 6N-CH 75V 110A ISOPLUS FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 110A Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 17-SMD, Gull Wing Supplier Device Package: ISOPLUS-DIL?	패키지: 17-SMD, Gull Wing	재고2,208
CLA30MT1200NPB	IXYS	THYRISTOR PHASE TO220 Triac Type: Standard Voltage - Off State: 1200V (1.2kV) Current - On State (It (RMS)) (Max): 33A Voltage - Gate Trigger (Vgt) (Max): 1.3V Current - Non Rep. Surge 50, 60Hz (Itsm): 170A, 185A Current - Gate Trigger (Igt) (Max): 40mA Current - Hold (Ih) (Max): 50mA Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	패키지: TO-220-3	재고6,564
MCC132-14IO1	IXYS	THYRISTOR MODULE 1400V 2X130A Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1400V Current - On State (It (AV)) (Max): 130A Current - On State (It (RMS)) (Max): 300A Voltage - Gate Trigger (Vgt) (Max): 2.5V Current - Gate Trigger (Igt) (Max): 150mA Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5080A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: Y4-M6	패키지: Y4-M6	재고5,520
MCD95-08IO1B	IXYS	MOD THYRISTOR/DIO 800V TO-240AA Structure: Series Connection - SCR/Diode Number of SCRs, Diodes: 1 SCR, 1 Diode Voltage - Off State: 800V Current - On State (It (AV)) (Max): 116A Current - On State (It (RMS)) (Max): 180A Voltage - Gate Trigger (Vgt) (Max): 2.5V Current - Gate Trigger (Igt) (Max): 150mA Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: TO-240AA	패키지: TO-240AA	재고6,736
MLO140-16IO7	IXYS	MODULE AC CONTROL 1600V ECO-PAC1 Structure: 1-Phase Controller - SCR/Diode Number of SCRs, Diodes: 1 SCR, 1 Diode Voltage - Off State: 1600V Current - On State (It (AV)) (Max): 58A Current - On State (It (RMS)) (Max): 90A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 100mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1150A, 1230A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module	패키지: Module	재고2,528
MMO140-08IO7	IXYS	MODULE AC CONTROL 800V ECO-PAC1 Structure: 1-Phase Controller - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 800V Current - On State (It (AV)) (Max): 58A Current - On State (It (RMS)) (Max): 90A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 100mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1150A, 1230A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module	패키지: Module	재고5,600
MLO110-12IO7	IXYS	MODULE AC CONTROL 1200V ECO-PAC1 Structure: 1-Phase Controller - SCR/Diode Number of SCRs, Diodes: 1 SCR, 1 Diode Voltage - Off State: 1200V Current - On State (It (AV)) (Max): 51A Current - On State (It (RMS)) (Max): 81A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 100mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1000A, 1070A Current - Hold (Ih) (Max): 100mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module	패키지: Module	재고5,792
MDO600-16N1	IXYS	DIODE MODULE 1.6KV 608A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 608A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1200A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30mA @ 1600V Capacitance @ Vr, F: 762pF @ 400V, 1MHz Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module Operating Temperature - Junction: -	패키지: Module	재고2,192
DS17-08A	IXYS	DIODE AVALANCHE 800V 25A DO203AA Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.36V @ 55A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4mA @ 800V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA Operating Temperature - Junction: -40°C ~ 180°C	패키지: DO-203AA, DO-4, Stud	재고6,000
VBO25-12AO2	IXYS	DIODE BRIDGE 31A 1200V AVAL FO-A Diode Type: Single Phase Technology: Avalanche Voltage - Peak Reverse (Max): 1200V Current - Average Rectified (Io): 38A Voltage - Forward (Vf) (Max) @ If: 1.36V @ 55A Current - Reverse Leakage @ Vr: 300µA @ 1200V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 4-Square, FO-A Supplier Device Package: FO-A	패키지: 4-Square, FO-A	재고3,920
VBO30-08NO7	IXYS	DIODE BRIDGE 35A 800V PWS-A Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A Current - Reverse Leakage @ Vr: 40µA @ 800V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: PWS-A Supplier Device Package: PWS-A	패키지: PWS-A	재고2,928
SLMD121H9L	IXYS	MONO SOLAR CELL 62MM X 21MM Power (Watts) - Max: 201mW Current @ Pmpp: 44.6mA Voltage @ Pmpp: 4.5V Current Short Circuit (Isc): 50mA Type: Monocrystalline Voltage - Open Circuit: 5.67V Operating Temperature: - Package / Case: Cell (9) Size / Dimension: -	패키지: Cell (9)	재고28,932
MMIX1T660N04T4	IXYS	MOSFET N-CH 40V 660A 24SMPD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 660A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 860 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 44000 pF @ 25 V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 830W (Tc) Rds On (Max) @ Id, Vgs: 0.85mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 24-SMPD Package / Case: 24-PowerSMD, 21 Leads	패키지: -	Request a Quote
IXTP230N04T4	IXYS	MOSFET N-CH 40V 230A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 230A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 340W (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 115A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	패키지: -	Request a Quote
IXFA56N30X3	IXYS	MOSFET N-CH 300V 56A TO263AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 320W (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 28A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA (IXFA) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	패키지: -	재고444
W1524LC300	IXYS	DIODE GEN PURP 3KV 1524A W4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 3000 V Current - Average Rectified (Io): 1524A Voltage - Forward (Vf) (Max) @ If: 1.87 V @ 3090 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30 mA @ 3000 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AB, B-PUK Supplier Device Package: W4 Operating Temperature - Junction: -30°C ~ 160°C	패키지: -	Request a Quote

IXGQ150N30TC

IXYS

IGBT 300V 150A TO3P

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 300V
Current - Collector (Ic) (Max): 150A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P

패키지: TO-3P-3, SC-65-3

재고6,864

IXXX300N60C3

IXYS

IGBT 600V 510A 2300W TO247

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 510A
Current - Collector Pulsed (Icm): 1075A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
Power - Max: 2300W
Switching Energy: 3.35mJ (on), 1.9mJ (off)
Input Type: Standard
Gate Charge: 438nC
Td (on/off) @ 25°C: 50ns/160ns
Test Condition: 400V, 100A, 1 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PLUS247?-3

패키지: TO-247-3

재고2,640

IXGX82N120B3

IXYS

IGBT 1200V 230A 1250W PLUS247

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 230A
Current - Collector Pulsed (Icm): 500A
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
Power - Max: 1250W
Switching Energy: 5mJ (on), 3.3mJ (off)
Input Type: Standard
Gate Charge: 350nC
Td (on/off) @ 25°C: 30ns/210ns
Test Condition: 600V, 80A, 2 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PLUS247?-3

패키지: TO-247-3

재고2,400

IXYX140N90C3

IXYS

IGBT 900V 310A 1630W TO247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 900V
Current - Collector (Ic) (Max): 310A
Current - Collector Pulsed (Icm): 840A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 140A
Power - Max: 1630W
Switching Energy: 4.3mJ (on), 4mJ (off)
Input Type: Standard
Gate Charge: 330nC
Td (on/off) @ 25°C: 40ns/145ns
Test Condition: 450V, 100A, 1 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PLUS247?-3

패키지: TO-247-3

재고7,632

IXGN100N160A

IXYS

IGBT 200A 1600V SOT-227B

IGBT Type: -
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1600V
Current - Collector (Ic) (Max): 200A
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: Standard
NTC Thermistor: No
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B

패키지: SOT-227-4, miniBLOC

재고5,088

IXFH70N15

IXYS

MOSFET N-CH 150V 70A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 28 mOhm @ 35A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AD (IXFH)
Package / Case: TO-247-3

패키지: TO-247-3

재고4,288

IXFR200N10P

IXYS

MOSFET N-CH 100V 133A ISOPLUS247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 133A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 235nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 9 mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS247?
Package / Case: ISOPLUS247?

패키지: ISOPLUS247?

재고2,288

IXFK80N20Q

IXYS

MOSFET N-CH 200V 80A TO-264AA

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 28 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264AA (IXFK)
Package / Case: TO-264-3, TO-264AA

패키지: TO-264-3, TO-264AA

재고5,840

IXFH12N80P

IXYS

MOSFET N-CH 800V 12A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 850 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AD (IXFH)
Package / Case: TO-247-3

패키지: TO-247-3

재고3,920

IXFN110N85X

IXYS

850V/110A ULT JUNCT X-CLASS HIPE

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 850V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 425nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 17000pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 1170W (Tc)
Rds On (Max) @ Id, Vgs: 33 mOhm @ 55A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

패키지: SOT-227-4, miniBLOC

재고4,208

IXTA05N100HV

IXYS

MOSFET N-CH 1KV 750MA TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 750mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 17 Ohm @ 375mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고7,744

IXFN120N20

IXYS

MOSFET N-CH 200V 120A SOT-227B

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 120A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9100pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 17 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

패키지: SOT-227-4, miniBLOC

재고4,624

GWM120-0075X1-SMD

IXYS

MOSFET 6N-CH 75V 110A ISOPLUS

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 110A
Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 60A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 17-SMD, Gull Wing
Supplier Device Package: ISOPLUS-DIL?

패키지: 17-SMD, Gull Wing

재고2,208

CLA30MT1200NPB

IXYS

THYRISTOR PHASE TO220

Triac Type: Standard
Voltage - Off State: 1200V (1.2kV)
Current - On State (It (RMS)) (Max): 33A
Voltage - Gate Trigger (Vgt) (Max): 1.3V
Current - Non Rep. Surge 50, 60Hz (Itsm): 170A, 185A
Current - Gate Trigger (Igt) (Max): 40mA
Current - Hold (Ih) (Max): 50mA
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

패키지: TO-220-3

재고6,564

MCC132-14IO1

IXYS

THYRISTOR MODULE 1400V 2X130A

Structure: Series Connection - All SCRs
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 1400V
Current - On State (It (AV)) (Max): 130A
Current - On State (It (RMS)) (Max): 300A
Voltage - Gate Trigger (Vgt) (Max): 2.5V
Current - Gate Trigger (Igt) (Max): 150mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5080A
Current - Hold (Ih) (Max): 200mA
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Y4-M6

패키지: Y4-M6

재고5,520

MCD95-08IO1B

IXYS

MOD THYRISTOR/DIO 800V TO-240AA

Structure: Series Connection - SCR/Diode
Number of SCRs, Diodes: 1 SCR, 1 Diode
Voltage - Off State: 800V
Current - On State (It (AV)) (Max): 116A
Current - On State (It (RMS)) (Max): 180A
Voltage - Gate Trigger (Vgt) (Max): 2.5V
Current - Gate Trigger (Igt) (Max): 150mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A
Current - Hold (Ih) (Max): 200mA
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-240AA

패키지: TO-240AA

재고6,736

MLO140-16IO7

IXYS

MODULE AC CONTROL 1600V ECO-PAC1

Structure: 1-Phase Controller - SCR/Diode
Number of SCRs, Diodes: 1 SCR, 1 Diode
Voltage - Off State: 1600V
Current - On State (It (AV)) (Max): 58A
Current - On State (It (RMS)) (Max): 90A
Voltage - Gate Trigger (Vgt) (Max): 1.5V
Current - Gate Trigger (Igt) (Max): 100mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1150A, 1230A
Current - Hold (Ih) (Max): 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module

패키지: Module

재고2,528

MMO140-08IO7

IXYS

MODULE AC CONTROL 800V ECO-PAC1

Structure: 1-Phase Controller - All SCRs
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 800V
Current - On State (It (AV)) (Max): 58A
Current - On State (It (RMS)) (Max): 90A
Voltage - Gate Trigger (Vgt) (Max): 1.5V
Current - Gate Trigger (Igt) (Max): 100mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1150A, 1230A
Current - Hold (Ih) (Max): 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module

패키지: Module

재고5,600

MLO110-12IO7

IXYS

MODULE AC CONTROL 1200V ECO-PAC1

Structure: 1-Phase Controller - SCR/Diode
Number of SCRs, Diodes: 1 SCR, 1 Diode
Voltage - Off State: 1200V
Current - On State (It (AV)) (Max): 51A
Current - On State (It (RMS)) (Max): 81A
Voltage - Gate Trigger (Vgt) (Max): 1.5V
Current - Gate Trigger (Igt) (Max): 100mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1000A, 1070A
Current - Hold (Ih) (Max): 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module

패키지: Module

재고5,792

MDO600-16N1

IXYS

DIODE MODULE 1.6KV 608A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 608A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1200A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 30mA @ 1600V
Capacitance @ Vr, F: 762pF @ 400V, 1MHz
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Operating Temperature - Junction: -

패키지: Module

재고2,192

DS17-08A

IXYS

DIODE AVALANCHE 800V 25A DO203AA

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.36V @ 55A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 4mA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA
Operating Temperature - Junction: -40°C ~ 180°C

패키지: DO-203AA, DO-4, Stud

재고6,000

VBO25-12AO2

IXYS

DIODE BRIDGE 31A 1200V AVAL FO-A

Diode Type: Single Phase
Technology: Avalanche
Voltage - Peak Reverse (Max): 1200V
Current - Average Rectified (Io): 38A
Voltage - Forward (Vf) (Max) @ If: 1.36V @ 55A
Current - Reverse Leakage @ Vr: 300µA @ 1200V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: QC Terminal
Package / Case: 4-Square, FO-A
Supplier Device Package: FO-A

패키지: 4-Square, FO-A

재고3,920

VBO30-08NO7

IXYS

DIODE BRIDGE 35A 800V PWS-A

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A
Current - Reverse Leakage @ Vr: 40µA @ 800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: PWS-A
Supplier Device Package: PWS-A

패키지: PWS-A

재고2,928

SLMD121H9L

IXYS

MONO SOLAR CELL 62MM X 21MM

Power (Watts) - Max: 201mW
Current @ Pmpp: 44.6mA
Voltage @ Pmpp: 4.5V
Current Short Circuit (Isc): 50mA
Type: Monocrystalline
Voltage - Open Circuit: 5.67V
Operating Temperature: -
Package / Case: Cell (9)
Size / Dimension: -

패키지: Cell (9)

재고28,932

MMIX1T660N04T4

IXYS

MOSFET N-CH 40V 660A 24SMPD

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 660A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 860 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 44000 pF @ 25 V
Vgs (Max): ±15V
FET Feature: -
Power Dissipation (Max): 830W (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 24-SMPD
Package / Case: 24-PowerSMD, 21 Leads

패키지: -

Request a Quote

IXTP230N04T4

IXYS

MOSFET N-CH 40V 230A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
Vgs (Max): ±15V
FET Feature: -
Power Dissipation (Max): 340W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 115A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3

패키지: -

Request a Quote

IXFA56N30X3

IXYS

MOSFET N-CH 300V 56A TO263AA

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300 V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 320W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 28A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263AA (IXFA)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -

재고444

W1524LC300

IXYS

DIODE GEN PURP 3KV 1524A W4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 3000 V
Current - Average Rectified (Io): 1524A
Voltage - Forward (Vf) (Max) @ If: 1.87 V @ 3090 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 30 mA @ 3000 V
Capacitance @ Vr, F: -
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Supplier Device Package: W4
Operating Temperature - Junction: -30°C ~ 160°C

패키지: -

Request a Quote