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IXYS |
IGBT 600V ISOPLUS247
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: ISOPLUS247?
- Supplier Device Package: ISOPLUS247?
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패키지: ISOPLUS247? |
재고7,152 |
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IXYS |
IGBT 3000V 34A 150W ISOPLUSI4
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 3000V
- Current - Collector (Ic) (Max): 34A
- Current - Collector Pulsed (Icm): 150A
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A
- Power - Max: 150W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 105nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): 1.35µs
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: i4-Pac?-5 (3 leads)
- Supplier Device Package: ISOPLUS i4-PAC?
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패키지: i4-Pac?-5 (3 leads) |
재고3,712 |
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IXYS |
IGBT 1200V ISOPLUS247
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: ISOPLUS247?
- Supplier Device Package: ISOPLUS247?
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패키지: ISOPLUS247? |
재고4,240 |
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IXYS |
IGBT 600V 60A 220W TO220AB
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 60A
- Current - Collector Pulsed (Icm): 150A
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
- Power - Max: 220W
- Switching Energy: 270µJ (on), 90µJ (off)
- Input Type: Standard
- Gate Charge: 38nC
- Td (on/off) @ 25°C: 16ns/42ns
- Test Condition: 300V, 20A, 5 Ohm, 15V
- Reverse Recovery Time (trr): 60ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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패키지: TO-220-3 |
재고3,712 |
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IXYS |
IGBT 300V 170A 330W TO3P
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 300V
- Current - Collector (Ic) (Max): 170A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 85A
- Power - Max: 330W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 143nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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패키지: TO-3P-3, SC-65-3 |
재고4,080 |
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IXYS |
IGBT XPT 1200V 105A SOT-227B
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 105A
- Power - Max: 500W
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
- Current - Collector Cutoff (Max): 25µA
- Input Capacitance (Cies) @ Vce: 4.1nF @ 25V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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패키지: SOT-227-4, miniBLOC |
재고5,712 |
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IXYS |
MOSFET N-CH TO268
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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패키지: - |
재고4,496 |
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IXYS |
MOSFET N-CH 150V 75A ISOPLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 310W (Tc)
- Rds On (Max) @ Id, Vgs: 22.5 mOhm @ 40A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS247?
- Package / Case: ISOPLUS247?
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패키지: ISOPLUS247? |
재고103,464 |
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IXYS |
MOSFET N-CH 1000V 10A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 5320pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 695W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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패키지: TO-247-3 |
재고4,352 |
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IXYS |
MOSFET N-CH 500V 1.6A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 23.7nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 645pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 100W (Tc)
- Rds On (Max) @ Id, Vgs: 2.3 Ohm @ 800mA, 0V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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패키지: TO-220-3 |
재고6,672 |
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IXYS |
MOSFET 2N-CH 55V 140A ISOPLUS I5
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 140A
- Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
- Power - Max: 150W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: ISOPLUSi5-Pak?
- Supplier Device Package: ISOPLUSi5-Pak?
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패키지: ISOPLUSi5-Pak? |
재고6,208 |
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IXYS |
THYRISTOR PHASE 1600V TO-247AD
- Voltage - Off State: 1600V
- Voltage - Gate Trigger (Vgt) (Max): 1V
- Current - Gate Trigger (Igt) (Max): 65mA
- Voltage - On State (Vtm) (Max): 2.1V
- Current - On State (It (AV)) (Max): 19A
- Current - On State (It (RMS)) (Max): 30A
- Current - Hold (Ih) (Max): 100mA
- Current - Off State (Max): 2mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 200A, 215A
- SCR Type: Standard Recovery
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Through Hole
- Package / Case: TO-3P-3 Full Pack
- Supplier Device Package: TO-247AD
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패키지: TO-3P-3 Full Pack |
재고6,400 |
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IXYS |
SCR MOD 1800V Y2-DCB
- Structure: Series Connection - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 1800V
- Current - On State (It (AV)) (Max): 250A
- Current - On State (It (RMS)) (Max): 400A
- Voltage - Gate Trigger (Vgt) (Max): 2V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 8500A, 9000A
- Current - Hold (Ih) (Max): 150mA
- Operating Temperature: -40°C ~ 140°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
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패키지: Module |
재고7,280 |
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IXYS |
MODULE AC CTLR 3PH 1200V PWS-F
- Structure: 3-Phase Controller - All SCRs
- Number of SCRs, Diodes: 6 SCRs
- Voltage - Off State: 1200V
- Current - On State (It (AV)) (Max): 18A
- Current - On State (It (RMS)) (Max): 29A
- Voltage - Gate Trigger (Vgt) (Max): 1V
- Current - Gate Trigger (Igt) (Max): 100mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 400A, 450A
- Current - Hold (Ih) (Max): 150mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
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패키지: Module |
재고3,952 |
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IXYS |
MOD THYRISTOR DUAL 1200V Y4-M6
- Structure: Series Connection - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1200V
- Current - On State (It (AV)) (Max): 130A
- Current - On State (It (RMS)) (Max): 300A
- Voltage - Gate Trigger (Vgt) (Max): 2.5V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5080A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y4-M6
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패키지: Y4-M6 |
재고5,088 |
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IXYS |
MOD THYRISTOR/DIO 1600V TO-240AA
- Structure: Series Connection - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 1600V
- Current - On State (It (AV)) (Max): 64A
- Current - On State (It (RMS)) (Max): 100A
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 100mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: TO-240AA
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패키지: TO-240AA |
재고5,072 |
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DIODE MODULE 600V 514A Y4-M6
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 514A
- Voltage - Forward (Vf) (Max) @ If: 1.52V @ 520A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 300ns
- Current - Reverse Leakage @ Vr: 24mA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: Y4-M6
- Supplier Device Package: Y4-M6
- Operating Temperature - Junction: -40°C ~ 150°C
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패키지: Y4-M6 |
재고4,800 |
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IXYS |
DIODE GEN PURP 600V 37A TO247AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 37A
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 37A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AD
- Operating Temperature - Junction: -40°C ~ 150°C
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패키지: TO-247-2 |
재고33,912 |
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IXYS |
DIODE ARRAY SCHOTTKY 600V 11A
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io) (per Diode): 11A
- Voltage - Forward (Vf) (Max) @ If: 2.1V @ 6A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 20ns
- Current - Reverse Leakage @ Vr: 150µA @ 600V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: ISOPLUS220?
- Supplier Device Package: ISOPLUS220?
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패키지: ISOPLUS220? |
재고7,072 |
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IXYS |
DIODE MODULE 800V 113A TO240AA
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io) (per Diode): 113A
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 300A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 15mA @ 800V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: TO-240AA
- Supplier Device Package: TO-240AA
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패키지: TO-240AA |
재고7,616 |
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IXYS |
DIODE ARRAY GP 300V 30A TO3P
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300V
- Current - Average Rectified (Io) (per Diode): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.34V @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 1µA @ 300V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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패키지: TO-3P-3, SC-65-3 |
재고3,520 |
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IXYS |
DIODE ARRAY SCHOTTKY 45V TO247AD
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io) (per Diode): 30A
- Voltage - Forward (Vf) (Max) @ If: 620mV @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10mA @ 45V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-3P-3 Full Pack
- Supplier Device Package: TO-247AD (HB)
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패키지: TO-3P-3 Full Pack |
재고4,560 |
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IXYS |
IC GATE DRIVER 4A 8-SOIC
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 30 V
- Logic Voltage - VIL, VIH: 0.8V, 3V
- Current - Peak Output (Source, Sink): 4A, 4A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 9ns, 8ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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패키지: 8-SOIC (0.154", 3.90mm Width) |
재고7,360 |
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IXYS |
IC CURRENT REGULATOR TO220AB
- Function: Current Regulator
- Sensing Method: -
- Accuracy: -
- Voltage - Input: -
- Current - Output: 20mA
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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패키지: TO-220-3 |
재고2,288 |
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IXYS |
MOSFET N-CH PLUS247-3
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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패키지: - |
Request a Quote |
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IXYS |
SCR 1.2KV 35MA TO220
- Voltage - Off State: 1.2 kV
- Voltage - Gate Trigger (Vgt) (Max): 1.3 V
- Current - Gate Trigger (Igt) (Max): 20 mA
- Voltage - On State (Vtm) (Max): 1.4 V
- Current - On State (It (AV)) (Max): 20 A
- Current - On State (It (RMS)) (Max): 35 mA
- Current - Hold (Ih) (Max): 25 mA
- Current - Off State (Max): -
- Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 130A
- SCR Type: Standard Recovery
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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패키지: - |
Request a Quote |
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IXYS |
MOSFET N-CH 300V 26A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300 V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 170W (Tc)
- Rds On (Max) @ Id, Vgs: 66mOhm @ 13A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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패키지: - |
재고1,563 |
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IXYS |
MOSFET P-CH 150V 10A TO263
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 83W (Ta)
- Rds On (Max) @ Id, Vgs: 350mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2PAK)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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패키지: - |
Request a Quote |
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