페이지 21 - IXYS 제품 | Heisener Electronics

부품 번호	제조업체	설명	패키지	재고
IXGT40N60B2	IXYS	IGBT 600V 75A 300W TO268 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A Power - Max: 300W Switching Energy: 400µJ (off) Input Type: Standard Gate Charge: 100nC Td (on/off) @ 25°C: 18ns/130ns Test Condition: 400V, 30A, 3.3 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268	패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	재고2,496
IXGF25N300	IXYS	IGBT 3000V 27A 114W I4-PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 3000V Current - Collector (Ic) (Max): 27A Current - Collector Pulsed (Icm): 140A Vce(on) (Max) @ Vge, Ic: 5.5V @ 15V, 75A Power - Max: 114W Switching Energy: - Input Type: Standard Gate Charge: 75nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: i4-Pac?-5 (3 leads) Supplier Device Package: ISOPLUS i4-PAC?	패키지: i4-Pac?-5 (3 leads)	재고4,112
MMIX1X200N60B3	IXYS	IGBT 600V 223A 625W SMPD IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 223A Current - Collector Pulsed (Icm): 1000A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A Power - Max: 625W Switching Energy: 2.85mJ (on), 2.9mJ (off) Input Type: Standard Gate Charge: 315nC Td (on/off) @ 25°C: 48ns/160ns Test Condition: 360V, 100A, 1 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 24-PowerSMD, 21 Leads Supplier Device Package: SMPD	패키지: 24-PowerSMD, 21 Leads	재고3,984
IXGK35N120B	IXYS	IGBT 1200V 70A 350W TO264AA IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 70A Current - Collector Pulsed (Icm): 140A Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 35A Power - Max: 350W Switching Energy: 3.8mJ (off) Input Type: Standard Gate Charge: 170nC Td (on/off) @ 25°C: 50ns/180ns Test Condition: 960V, 35A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264 (IXGK)	패키지: TO-264-3, TO-264AA	재고3,584
VDI25-12P1	IXYS	MOD IGBT BUCK 1200V ECO-PAC2 IGBT Type: NPT Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Power - Max: 130W Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 25A Current - Collector Cutoff (Max): 900µA Input Capacitance (Cies) @ Vce: 1nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: ECO-PAC2 Supplier Device Package: ECO-PAC2	패키지: ECO-PAC2	재고2,096
IXFD23N60Q-72	IXYS	MOSFET N-CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: Die Package / Case: Die	패키지: Die	재고7,632
IXTC180N085T	IXYS	MOSFET N-CH 85V 110A ISOPLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS220? Package / Case: ISOPLUS220?	패키지: ISOPLUS220?	재고4,848
IXTK22N100L	IXYS	MOSFET N-CH 1000V 22A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 7050pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 700W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 11A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (IXTK) Package / Case: TO-264-3, TO-264AA	패키지: TO-264-3, TO-264AA	재고5,792
IXTK88N30P	IXYS	MOSFET N-CH 300V 88A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 88A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 44A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (IXTK) Package / Case: TO-264-3, TO-264AA	패키지: TO-264-3, TO-264AA	재고6,960
IXFH74N20P	IXYS	MOSFET N-CH 200V 74A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 34 mOhm @ 37A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	패키지: TO-247-3	재고4,064
IXFH14N85X	IXYS	MOSFET N-CH 850V 14A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 850V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1043pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 460W (Tc) Rds On (Max) @ Id, Vgs: 550 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	패키지: TO-247-3	재고6,204
IXTH6N50D2	IXYS	MOSFET N-CH 500V 6A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 96nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 3A, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	패키지: TO-247-3	재고5,312
CS20-25MO1F	IXYS	THYRISTOR PHASE 2500V I4-PAC Voltage - Off State: 2500V Voltage - Gate Trigger (Vgt) (Max): - Current - Gate Trigger (Igt) (Max): - Voltage - On State (Vtm) (Max): - Current - On State (It (AV)) (Max): - Current - On State (It (RMS)) (Max): - Current - Hold (Ih) (Max): - Current - Off State (Max): - Current - Non Rep. Surge 50, 60Hz (Itsm): - SCR Type: Standard Recovery Operating Temperature: - Mounting Type: Through Hole Package / Case: i4-Pac?-5 (3 leads) Supplier Device Package: ISOPLUS i4-PAC?	패키지: i4-Pac?-5 (3 leads)	재고2,592
MDA600-22N1	IXYS	DIODE MODULE 2.2KV 883A Diode Configuration: 1 Pair Common Anode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2200V Current - Average Rectified (Io) (per Diode): 883A Voltage - Forward (Vf) (Max) @ If: 880mV @ 500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 18µs Current - Reverse Leakage @ Vr: 50mA @ 2200V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: Module	재고6,544
DHG20C600PB	IXYS	DIODE ARRAY GP 600V 10A TO220AB Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io) (per Diode): 10A Voltage - Forward (Vf) (Max) @ If: 2.37V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 15µA @ 600V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고4,672
DSEC16-12AS-TUB	IXYS	DIODE ARRAY GP 1200V 10A TO263AB Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io) (per Diode): 10A Voltage - Forward (Vf) (Max) @ If: 2.94V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40ns Current - Reverse Leakage @ Vr: 60µA @ 1200V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고2,544
DSA30C45PC	IXYS	DIODE ARRAY SCHOTTKY 45V TO263 Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io) (per Diode): 15A Voltage - Forward (Vf) (Max) @ If: 750mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250µA @ 45V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2Pak)	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고6,688
DH2X61-18A	IXYS	DIODE MODULE 1.8KV 60A SOT227B Diode Configuration: 2 Independent Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1800V Current - Average Rectified (Io) (per Diode): 60A Voltage - Forward (Vf) (Max) @ If: 2.01V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 230ns Current - Reverse Leakage @ Vr: 200µA @ 1800V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B	패키지: SOT-227-4, miniBLOC	재고9,192
LDS8726	IXYS	IC LED DRVR RGLTR DIM 1.9A 8TDFN Type: DC DC Regulator Topology: Step-Up (Boost) Internal Switch(s): Yes Number of Outputs: 1 Voltage - Supply (Min): 2.7V Voltage - Supply (Max): 5.5V Voltage - Output: - Current - Output / Channel: 1.9A (Switch) Frequency: 1MHz Dimming: PWM Applications: Backlight Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WFDFN Exposed Pad Supplier Device Package: 8-TDFN (2x3)	패키지: 8-WFDFN Exposed Pad	재고5,120
DLA100IM1200TZ-TUB	IXYS	RECTIFIER 1200V 100A TO-268AA Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1.2 kV Current - Average Rectified (Io): 100 A Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 100 A Current - Reverse Leakage @ Vr: 20 µA @ 1200 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268AA (D3Pak-HV)	패키지: -	Request a Quote
DMA10P1800PZ-TRL	IXYS	DIODE GEN PURP 1.8KV 10A TO263HV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1800 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 1800 V Capacitance @ Vr, F: 4pF @ 400V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263HV Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote
IXGP48N60B3	IXYS	DISC IGBT PT-MID FREQUENCY TO-22 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 48 A Current - Collector Pulsed (Icm): 280 A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A Power - Max: 300 W Switching Energy: 840µJ (on), 660µJ (off) Input Type: Standard Gate Charge: 115 nC Td (on/off) @ 25°C: 22ns/130ns Test Condition: 480V, 30A, 5Ohm, 15V Reverse Recovery Time (trr): 25 ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	패키지: -	Request a Quote
IXXH40N65C4D1	IXYS	IGBT PT 650V 110A TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 110 A Current - Collector Pulsed (Icm): 215 A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A Power - Max: 455 W Switching Energy: 1.6mJ (on), 420µJ (off) Input Type: Standard Gate Charge: 68 nC Td (on/off) @ 25°C: 20ns/100ns Test Condition: 400V, 40A, 5Ohm, 15V Reverse Recovery Time (trr): 62 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 (IXTH)	패키지: -	Request a Quote
IXTP12N70X2M	IXYS	MOSFET N-CH 700V 12A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Isolated Tab Package / Case: TO-220-3 Full Pack, Isolated Tab	패키지: -	Request a Quote
IXTA90N075T2-TRL	IXYS	MOSFET N-CH 75V 90A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75 V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 45A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	패키지: -	Request a Quote
IXTA42N15T	IXYS	MOSFET N-CH 150V 42A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 21A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	패키지: -	Request a Quote
IXTH2N150	IXYS	DISCMOSFET N-CH STD-HIVOLTAGE TO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500 V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 9.2Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	패키지: -	Request a Quote
DSB10P60PN	IXYS	DIODE SCHOTTKY 60V 10A TO220ABFP Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 690 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4 mA @ 60 V Capacitance @ Vr, F: 149pF @ 12V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220ABFP Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote

IXGT40N60B2

IXYS

IGBT 600V 75A 300W TO268

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Power - Max: 300W
Switching Energy: 400µJ (off)
Input Type: Standard
Gate Charge: 100nC
Td (on/off) @ 25°C: 18ns/130ns
Test Condition: 400V, 30A, 3.3 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268

패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

재고2,496

IXGF25N300

IXYS

IGBT 3000V 27A 114W I4-PAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 3000V
Current - Collector (Ic) (Max): 27A
Current - Collector Pulsed (Icm): 140A
Vce(on) (Max) @ Vge, Ic: 5.5V @ 15V, 75A
Power - Max: 114W
Switching Energy: -
Input Type: Standard
Gate Charge: 75nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: i4-Pac?-5 (3 leads)
Supplier Device Package: ISOPLUS i4-PAC?

패키지: i4-Pac?-5 (3 leads)

재고4,112

MMIX1X200N60B3

IXYS

IGBT 600V 223A 625W SMPD

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 223A
Current - Collector Pulsed (Icm): 1000A
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
Power - Max: 625W
Switching Energy: 2.85mJ (on), 2.9mJ (off)
Input Type: Standard
Gate Charge: 315nC
Td (on/off) @ 25°C: 48ns/160ns
Test Condition: 360V, 100A, 1 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-PowerSMD, 21 Leads
Supplier Device Package: SMPD

패키지: 24-PowerSMD, 21 Leads

재고3,984

IXGK35N120B

IXYS

IGBT 1200V 70A 350W TO264AA

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 70A
Current - Collector Pulsed (Icm): 140A
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 35A
Power - Max: 350W
Switching Energy: 3.8mJ (off)
Input Type: Standard
Gate Charge: 170nC
Td (on/off) @ 25°C: 50ns/180ns
Test Condition: 960V, 35A, 5 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 (IXGK)

패키지: TO-264-3, TO-264AA

재고3,584

VDI25-12P1

IXYS

MOD IGBT BUCK 1200V ECO-PAC2

IGBT Type: NPT
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 30A
Power - Max: 130W
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 25A
Current - Collector Cutoff (Max): 900µA
Input Capacitance (Cies) @ Vce: 1nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ECO-PAC2
Supplier Device Package: ECO-PAC2

패키지: ECO-PAC2

재고2,096

IXFD23N60Q-72

IXYS

MOSFET N-CH

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: Die
Package / Case: Die

패키지: Die

재고7,632

IXTC180N085T

IXYS

MOSFET N-CH 85V 110A ISOPLUS220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 85V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS220?
Package / Case: ISOPLUS220?

패키지: ISOPLUS220?

재고4,848

IXTK22N100L

IXYS

MOSFET N-CH 1000V 22A TO-264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 7050pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 700W (Tc)
Rds On (Max) @ Id, Vgs: 600 mOhm @ 11A, 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264 (IXTK)
Package / Case: TO-264-3, TO-264AA

패키지: TO-264-3, TO-264AA

재고5,792

IXTK88N30P

IXYS

MOSFET N-CH 300V 88A TO-264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 40 mOhm @ 44A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264 (IXTK)
Package / Case: TO-264-3, TO-264AA

패키지: TO-264-3, TO-264AA

재고6,960

IXFH74N20P

IXYS

MOSFET N-CH 200V 74A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 34 mOhm @ 37A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AD (IXFH)
Package / Case: TO-247-3

패키지: TO-247-3

재고4,064

IXFH14N85X

IXYS

MOSFET N-CH 850V 14A TO247-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 850V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1043pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 550 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AD (IXFH)
Package / Case: TO-247-3

패키지: TO-247-3

재고6,204

IXTH6N50D2

IXYS

MOSFET N-CH 500V 6A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 96nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
Vgs (Max): ±20V
FET Feature: Depletion Mode
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 500 mOhm @ 3A, 0V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Package / Case: TO-247-3

패키지: TO-247-3

재고5,312

CS20-25MO1F

IXYS

THYRISTOR PHASE 2500V I4-PAC

Voltage - Off State: 2500V
Voltage - Gate Trigger (Vgt) (Max): -
Current - Gate Trigger (Igt) (Max): -
Voltage - On State (Vtm) (Max): -
Current - On State (It (AV)) (Max): -
Current - On State (It (RMS)) (Max): -
Current - Hold (Ih) (Max): -
Current - Off State (Max): -
Current - Non Rep. Surge 50, 60Hz (Itsm): -
SCR Type: Standard Recovery
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: i4-Pac?-5 (3 leads)
Supplier Device Package: ISOPLUS i4-PAC?

패키지: i4-Pac?-5 (3 leads)

재고2,592

MDA600-22N1

IXYS

DIODE MODULE 2.2KV 883A

Diode Configuration: 1 Pair Common Anode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2200V
Current - Average Rectified (Io) (per Diode): 883A
Voltage - Forward (Vf) (Max) @ If: 880mV @ 500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 18µs
Current - Reverse Leakage @ Vr: 50mA @ 2200V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: Module

재고6,544

DHG20C600PB

IXYS

DIODE ARRAY GP 600V 10A TO220AB

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io) (per Diode): 10A
Voltage - Forward (Vf) (Max) @ If: 2.37V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 15µA @ 600V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고4,672

DSEC16-12AS-TUB

IXYS

DIODE ARRAY GP 1200V 10A TO263AB

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 10A
Voltage - Forward (Vf) (Max) @ If: 2.94V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40ns
Current - Reverse Leakage @ Vr: 60µA @ 1200V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고2,544

DSA30C45PC

IXYS

DIODE ARRAY SCHOTTKY 45V TO263

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io) (per Diode): 15A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 250µA @ 45V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고6,688

DH2X61-18A

IXYS

DIODE MODULE 1.8KV 60A SOT227B

Diode Configuration: 2 Independent
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1800V
Current - Average Rectified (Io) (per Diode): 60A
Voltage - Forward (Vf) (Max) @ If: 2.01V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 230ns
Current - Reverse Leakage @ Vr: 200µA @ 1800V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B

패키지: SOT-227-4, miniBLOC

재고9,192

LDS8726

IXYS

IC LED DRVR RGLTR DIM 1.9A 8TDFN

Type: DC DC Regulator
Topology: Step-Up (Boost)
Internal Switch(s): Yes
Number of Outputs: 1
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
Voltage - Output: -
Current - Output / Channel: 1.9A (Switch)
Frequency: 1MHz
Dimming: PWM
Applications: Backlight
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WFDFN Exposed Pad
Supplier Device Package: 8-TDFN (2x3)

패키지: 8-WFDFN Exposed Pad

재고5,120

DLA100IM1200TZ-TUB

IXYS

RECTIFIER 1200V 100A TO-268AA

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 100 A
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 100 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268AA (D3Pak-HV)

패키지: -

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DMA10P1800PZ-TRL

IXYS

DIODE GEN PURP 1.8KV 10A TO263HV

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1800 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 1800 V
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

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IXGP48N60B3

IXYS

DISC IGBT PT-MID FREQUENCY TO-22

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 48 A
Current - Collector Pulsed (Icm): 280 A
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Power - Max: 300 W
Switching Energy: 840µJ (on), 660µJ (off)
Input Type: Standard
Gate Charge: 115 nC
Td (on/off) @ 25°C: 22ns/130ns
Test Condition: 480V, 30A, 5Ohm, 15V
Reverse Recovery Time (trr): 25 ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

패키지: -

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IXXH40N65C4D1

IXYS

IGBT PT 650V 110A TO247

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 110 A
Current - Collector Pulsed (Icm): 215 A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Power - Max: 455 W
Switching Energy: 1.6mJ (on), 420µJ (off)
Input Type: Standard
Gate Charge: 68 nC
Td (on/off) @ 25°C: 20ns/100ns
Test Condition: 400V, 40A, 5Ohm, 15V
Reverse Recovery Time (trr): 62 ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXTH)

패키지: -

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IXTP12N70X2M

IXYS

MOSFET N-CH 700V 12A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 700 V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220 Isolated Tab
Package / Case: TO-220-3 Full Pack, Isolated Tab

패키지: -

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IXTA90N075T2-TRL

IXYS

MOSFET N-CH 75V 90A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75 V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 45A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -

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IXTA42N15T

IXYS

MOSFET N-CH 150V 42A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 21A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -

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IXTH2N150

IXYS

DISCMOSFET N-CH STD-HIVOLTAGE TO

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1500 V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 9.2Ohm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Package / Case: TO-247-3

패키지: -

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DSB10P60PN

IXYS

DIODE SCHOTTKY 60V 10A TO220ABFP

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 4 mA @ 60 V
Capacitance @ Vr, F: 149pF @ 12V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220ABFP
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

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