페이지 25 - IXYS 제품 | Heisener Electronics
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IXYS 제품

기록 5,468
페이지  25/196
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IXGX60N60C2D1
IXYS

IGBT 600V 75A 480W PLUS247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
  • Power - Max: 480W
  • Switching Energy: 400µJ (on), 480µJ (off)
  • Input Type: Standard
  • Gate Charge: 146nC
  • Td (on/off) @ 25°C: 18ns/95ns
  • Test Condition: 400V, 50A, 2 Ohm, 15V
  • Reverse Recovery Time (trr): 35ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
패키지: TO-247-3
재고5,120
IXXH50N60B3D1
IXYS

IGBT 600V 120A 600W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 120A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
  • Power - Max: 600W
  • Switching Energy: 670µJ (on), 740µJ (off)
  • Input Type: Standard
  • Gate Charge: 70nC
  • Td (on/off) @ 25°C: 27ns/100ns
  • Test Condition: 360V, 36A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXXH)
패키지: TO-247-3
재고6,528
IXGR48N60B3D1
IXYS

IGBT 600V 60A 150W ISOPLUS247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 280A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 150W
  • Switching Energy: 840µJ (on), 660µJ (off)
  • Input Type: Standard
  • Gate Charge: 115nC
  • Td (on/off) @ 25°C: 22ns/130ns
  • Test Condition: 480V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 100ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
패키지: ISOPLUS247?
재고7,904
IXXH30N60C3D1
IXYS

IGBT 600V 60A 270W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 110A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 24A
  • Power - Max: 270W
  • Switching Energy: 500µJ (on), 270µJ (off)
  • Input Type: Standard
  • Gate Charge: 37nC
  • Td (on/off) @ 25°C: 23ns/77ns
  • Test Condition: 400V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXXH)
패키지: TO-247-3
재고4,016
IXTJ36N20
IXYS

MOSFET N-CH 200V 36A TO-247AD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2970pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD
  • Package / Case: TO-3P-3 Full Pack
패키지: TO-3P-3 Full Pack
재고4,096
IXFN44N100P
IXYS

MOSFET N-CH 1000V 37A SOT-227B

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 37A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 6.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 890W (Tc)
  • Rds On (Max) @ Id, Vgs: 220 mOhm @ 22A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC
패키지: SOT-227-4, miniBLOC
재고6,960
IXFH12N100Q
IXYS

MOSFET N-CH 1000V 12A TO-247AD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD (IXFH)
  • Package / Case: TO-247-3
패키지: TO-247-3
재고4,304
hot IXFH30N50
IXYS

MOSFET N-CH 500V 30A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 160 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD (IXFH)
  • Package / Case: TO-247-3
패키지: TO-247-3
재고391,812
IXTT16N10D2
IXYS

MOSFET N-CH 100V 16A TO-268

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 225nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 830W (Tc)
  • Rds On (Max) @ Id, Vgs: 64 mOhm @ 8A, 0V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
재고3,648
IXTU12N06T
IXYS

MOSFET N-CH 60V 12A TO-251

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 256pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 33W (Tc)
  • Rds On (Max) @ Id, Vgs: 85 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
패키지: TO-251-3 Short Leads, IPak, TO-251AA
재고12,192
VWO50-14IO7
IXYS

MODULE AC CTLR 3PH 1400V PWS-F

  • Structure: 3-Phase Controller - All SCRs
  • Number of SCRs, Diodes: 6 SCRs
  • Voltage - Off State: 1400V
  • Current - On State (It (AV)) (Max): 23A
  • Current - On State (It (RMS)) (Max): 36A
  • Voltage - Gate Trigger (Vgt) (Max): 1V
  • Current - Gate Trigger (Igt) (Max): 100mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560A
  • Current - Hold (Ih) (Max): 150mA
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
패키지: Module
재고2,464
VVZ12-14IO1
IXYS

RECT BRIDGE 3PH 20A 1400V KAMM

  • Structure: Bridge, 3-Phase - SCRs/Diodes
  • Number of SCRs, Diodes: 3 SCRs, 3 Diodes
  • Voltage - Off State: 1400V
  • Current - On State (It (AV)) (Max): 20A
  • Current - On State (It (RMS)) (Max): -
  • Voltage - Gate Trigger (Vgt) (Max): 1V
  • Current - Gate Trigger (Igt) (Max): 65mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 110A, 115A
  • Current - Hold (Ih) (Max): 100mA
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: KAMM
패키지: KAMM
재고2,512
MCC95-14IO8B
IXYS

MOD THYRISTOR DUAL 1400V TO240AA

  • Structure: Series Connection - All SCRs
  • Number of SCRs, Diodes: 2 SCRs
  • Voltage - Off State: 1400V
  • Current - On State (It (AV)) (Max): 116A
  • Current - On State (It (RMS)) (Max): 180A
  • Voltage - Gate Trigger (Vgt) (Max): 2.5V
  • Current - Gate Trigger (Igt) (Max): 150mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A
  • Current - Hold (Ih) (Max): 200mA
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: TO-240AA
패키지: TO-240AA
재고2,816
MCD56-14IO8B
IXYS

MOD THYRISTOR/DIO 1400V TO-240AA

  • Structure: Series Connection - SCR/Diode
  • Number of SCRs, Diodes: 1 SCR, 1 Diode
  • Voltage - Off State: 1400V
  • Current - On State (It (AV)) (Max): 64A
  • Current - On State (It (RMS)) (Max): 100A
  • Voltage - Gate Trigger (Vgt) (Max): 1.5V
  • Current - Gate Trigger (Igt) (Max): 100mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A
  • Current - Hold (Ih) (Max): 200mA
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: TO-240AA
패키지: TO-240AA
재고2,624
MCD44-16IO8B
IXYS

MOD THYRISTOR DUAL 1600V TO240AA

  • Structure: Series Connection - SCR/Diode
  • Number of SCRs, Diodes: 1 SCR, 1 Diode
  • Voltage - Off State: 1600V
  • Current - On State (It (AV)) (Max): 51A
  • Current - On State (It (RMS)) (Max): 80A
  • Voltage - Gate Trigger (Vgt) (Max): 1.5V
  • Current - Gate Trigger (Igt) (Max): 100mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 1150A, 1230A
  • Current - Hold (Ih) (Max): 200mA
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: TO-240AA
패키지: TO-240AA
재고4,960
MMO110-08IO7
IXYS

MODULE AC CONTROL 800V ECO-PAC1

  • Structure: 1-Phase Controller - All SCRs
  • Number of SCRs, Diodes: 2 SCRs
  • Voltage - Off State: 800V
  • Current - On State (It (AV)) (Max): 51A
  • Current - On State (It (RMS)) (Max): 81A
  • Voltage - Gate Trigger (Vgt) (Max): 1.5V
  • Current - Gate Trigger (Igt) (Max): 100mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 1000A, 1070A
  • Current - Hold (Ih) (Max): 100mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
패키지: Module
재고4,752
DPG60C400QB
IXYS

DIODE ARRAY GP 400V 30A TO3P

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io) (per Diode): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.41V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45ns
  • Current - Reverse Leakage @ Vr: 1µA @ 400V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
패키지: TO-3P-3, SC-65-3
재고3,760
IX2A11P1
IXYS

IC DRVR HALF BRIDGE GATE 8DIP

  • Driven Configuration: -
  • Channel Type: -
  • Number of Drivers: -
  • Gate Type: -
  • Voltage - Supply: -
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
패키지: 8-DIP (0.300", 7.62mm)
재고5,648
IXCY30M35
IXYS

IC CURRENT REGULATOR DPAK

  • Function: Current Regulator
  • Sensing Method: -
  • Accuracy: -
  • Voltage - Input: -
  • Current - Output: 30mA
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고7,536
IXFH240N15X3
IXYS

MOSFET N-CH 150V 240A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9580 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 780W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.4mOhm @ 120A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
패키지: -
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QV6012LH5TP
IXYS

TRIAC SENS GATE 600V 12A ITO220

  • Triac Type: Logic - Sensitive Gate
  • Voltage - Off State: 600 V
  • Current - On State (It (RMS)) (Max): 12 A
  • Voltage - Gate Trigger (Vgt) (Max): 1.2 V
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
  • Current - Gate Trigger (Igt) (Max): 50 mA
  • Current - Hold (Ih) (Max): 50 mA
  • Configuration: Single
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Isolated Tab
  • Supplier Device Package: ITO-220AB
패키지: -
재고3,000
MDD810-12N2
IXYS

DIODE MODULE GP 1200V 807A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io) (per Diode): 807A
  • Voltage - Forward (Vf) (Max) @ If: 1.24 V @ 2000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 16.5 µs
  • Current - Reverse Leakage @ Vr: 50 mA @ 1200 V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
패키지: -
Request a Quote
IXYA8N250CHV
IXYS

IGBT 2500V 29A TO263HV

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 2500 V
  • Current - Collector (Ic) (Max): 29 A
  • Current - Collector Pulsed (Icm): 70 A
  • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
  • Power - Max: 280 W
  • Switching Energy: 2.6mJ (on), 1.07mJ (off)
  • Input Type: Standard
  • Gate Charge: 45 nC
  • Td (on/off) @ 25°C: 11ns/180ns
  • Test Condition: 1250V, 8A, 15Ohm, 15V
  • Reverse Recovery Time (trr): 5 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263HV
패키지: -
재고108
M2325HA450
IXYS

DIODE GEN PURP 4.5KV 2325A W121

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4500 V
  • Current - Average Rectified (Io): 2325A
  • Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 2500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 5.4 µs
  • Current - Reverse Leakage @ Vr: 150 mA @ 4500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AD
  • Supplier Device Package: W121
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: -
Request a Quote
DAA10P1800PZ-TRL
IXYS

DIODE ARR AVAL 1800V 10A TO263HV

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 1800 V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 1800 V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263HV
패키지: -
Request a Quote
DSEI36-06AS-TUB
IXYS

DIODE GEN PURP 600V 37A TO263AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 37A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 37 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AA
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: -
재고990
CLB30I1200PZ-TRL
IXYS

SCR 1.2KV 47A TO263

  • Voltage - Off State: 1.2 kV
  • Voltage - Gate Trigger (Vgt) (Max): 1.3 V
  • Current - Gate Trigger (Igt) (Max): 30 mA
  • Voltage - On State (Vtm) (Max): 1.3 V
  • Current - On State (It (AV)) (Max): 30 A
  • Current - On State (It (RMS)) (Max): 47 A
  • Current - Hold (Ih) (Max): 60 mA
  • Current - Off State (Max): -
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 300A, 325A
  • SCR Type: Standard Recovery
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263HV
패키지: -
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IXTM12N100
IXYS

MOSFET N-CH 1000V 12A TO204AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-204AA (IXTM)
  • Package / Case: TO-204AA, TO-3
패키지: -
Request a Quote