IXYS 제품

IXGH60N60C2

IXYS

IGBT 600V 75A 480W TO247AD

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 300A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
• Power - Max: 480W
• Switching Energy: 480µJ (off)
• Input Type: Standard
• Gate Charge: 146nC
• Td (on/off) @ 25°C: 18ns/95ns
• Test Condition: 400V, 50A, 2 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

패키지: TO-247-3

IXSH20N60B2D1

IXYS

IGBT 600V 35A 190W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 35A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 16A
• Power - Max: 190W
• Switching Energy: 380µJ (off)
• Input Type: Standard
• Gate Charge: 33nC
• Td (on/off) @ 25°C: 30ns/116ns
• Test Condition: 480V, 16A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 30ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXSH)

패키지: TO-247-3

IXGT30N120B3D1

IXYS

IGBT 1200V 300W TO268

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): 150A
• Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A
• Power - Max: 300W
• Switching Energy: 3.47mJ (on), 2.16mJ (off)
• Input Type: Standard
• Gate Charge: 87nC
• Td (on/off) @ 25°C: 16ns/127ns
• Test Condition: 960V, 30A, 5 Ohm, 15V
• Reverse Recovery Time (trr): 100ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268

패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXA20I1200PB

IXYS

IGBT 1200V 33A 130W TO220

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 38A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
• Power - Max: 165W
• Switching Energy: 1.65mJ (on), 1.7mJ (off)
• Input Type: Standard
• Gate Charge: 47nC
• Td (on/off) @ 25°C: -
• Test Condition: 600V, 15A, 56 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

패키지: TO-220-3

MUBW50-12A8

IXYS

MODULE IGBT CBI E3

• IGBT Type: NPT
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 85A
• Power - Max: 350W
• Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
• Current - Collector Cutoff (Max): 3.7mA
• Input Capacitance (Cies) @ Vce: 3.3nF @ 25V
• Input: Three Phase Bridge Rectifier
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: E3
• Supplier Device Package: E3

패키지: E3

IXFK80N10Q

IXYS

MOSFET N-CH TO-264AA

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

패키지: -

IXFK72N20

IXYS

MOSFET N-CH TO-264AA

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 360W (Tc)
• Rds On (Max) @ Id, Vgs: 35 mOhm @ 36A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-264AA (IXFK)
• Package / Case: TO-264-3, TO-264AA

패키지: TO-264-3, TO-264AA

IXTV22N50P

IXYS

MOSFET N-CH 500V 22A PLUS220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 350W (Tc)
• Rds On (Max) @ Id, Vgs: 270 mOhm @ 11A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PLUS220
• Package / Case: TO-220-3, Short Tab

패키지: TO-220-3, Short Tab

IXFE24N100

IXYS

MOSFET N-CH 1000V 22A ISOPLUS227

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 22A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 500W (Tc)
• Rds On (Max) @ Id, Vgs: 390 mOhm @ 12A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SOT-227B
• Package / Case: SOT-227-4, miniBLOC

패키지: SOT-227-4, miniBLOC

IXFL39N90

IXYS

MOSFET N-CH 900V 34A ISOPLUS264

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 375nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 13400pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 580W (Tc)
• Rds On (Max) @ Id, Vgs: 220 mOhm @ 19.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: ISOPLUS264?
• Package / Case: ISOPLUS264?

패키지: ISOPLUS264?

IXTP2R4N120P

IXYS

MOSFET N-CH 1200V 2.4A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1200V
• Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1207pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

패키지: TO-220-3

IXTP42N15T

IXYS

MOSFET N-CH 150V 42A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1880pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 200W (Tc)
• Rds On (Max) @ Id, Vgs: 45 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

패키지: TO-220-3

IXTK90P20P

IXYS

MOSFET P-CH 200V 90A TO-264

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 205nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 890W (Tc)
• Rds On (Max) @ Id, Vgs: 44 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-264 (IXTK)
• Package / Case: TO-264-3, TO-264AA

패키지: TO-264-3, TO-264AA

FMM22-06PF

IXYS

MOSFET 2N-CH 600V 12A I4-PAC

• FET Type: 2 N-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 12A
• Rds On (Max) @ Id, Vgs: 350 mOhm @ 11A, 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
• Power - Max: 130W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: i4-Pac?-5
• Supplier Device Package: ISOPLUS i4-PAC?

패키지: i4-Pac?-5

DS1-12D

IXYS

DIODE GEN PURP 1.2KV 2.3A RADIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 2.3A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 7A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 700µA @ 1200V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: Radial
• Supplier Device Package: -
• Operating Temperature - Junction: -40°C ~ 150°C

패키지: Radial

DGS3-030AS

IXYS

DIODE SCHOTTKY 300V 5A TO252AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 300V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 2V @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 700µA @ 300V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252AA
• Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

DS35-08A

IXYS

DIODE GEN PURP 800V 49A DO203AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 49A
• Voltage - Forward (Vf) (Max) @ If: 1.55V @ 150A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 4mA @ 800V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB
• Operating Temperature - Junction: -40°C ~ 180°C

패키지: DO-203AB, DO-5, Stud

DSI2X55-16A

IXYS

DIODE MODULE 1.6KV 56A SOT227B

• Diode Configuration: 2 Independent
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1600V
• Current - Average Rectified (Io) (per Diode): 56A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 60A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 300µA @ 1600V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227B

패키지: SOT-227-4, miniBLOC

DSSK70-003B

IXYS

DIODE ARRAY SCHOTTKY 30V TO247AD

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io) (per Diode): 35A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Operating Temperature - Junction: 125°C (Max)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3 Full Pack
• Supplier Device Package: TO-247AD

패키지: TO-3P-3 Full Pack

SS275TC12205

IXYS

DIODE ARRAY SCHOTTKY 1.2KV DE275

• Diode Configuration: 3 Common Cathode
• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io) (per Diode): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 200µA @ 1200V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: 6-SMD, Flat Lead Exposed Pad
• Supplier Device Package: DE275

패키지: 6-SMD, Flat Lead Exposed Pad

VUE22-12NO7

IXYS

DIODE BRIDGE FAST 1200V ECO-PAC1

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1200V
• Current - Average Rectified (Io): 24A
• Voltage - Forward (Vf) (Max) @ If: 2.01V @ 10A
• Current - Reverse Leakage @ Vr: 60µA @ 1200V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: ECO-PAC1
• Supplier Device Package: ECO-PAC1

패키지: ECO-PAC1

VUO36-18NO8

IXYS

RECT BRIDGE 27A 1800V FO-B

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1800V
• Current - Average Rectified (Io): 27A
• Voltage - Forward (Vf) (Max) @ If: 1.04V @ 15A
• Current - Reverse Leakage @ Vr: 40µA @ 1800V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: QC Terminal
• Package / Case: 5-Square, FO-B
• Supplier Device Package: FO-B

패키지: 5-Square, FO-B

FUO22-12N

IXYS

RECT BRIDGE 3PHASE I4-PAC-5

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1200V
• Current - Average Rectified (Io): 28A
• Voltage - Forward (Vf) (Max) @ If: 1.62V @ 30A
• Current - Reverse Leakage @ Vr: 10µA @ 1200V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: i4-Pac?-5
• Supplier Device Package: ISOPLUS i4-PAC?

패키지: i4-Pac?-5

IXDN509D1

IXYS

IC GATE DRIVER SGL 9A 6-DFN

• Driven Configuration: Low-Side
• Channel Type: Single
• Number of Drivers: 1
• Gate Type: IGBT, N-Channel, P-Channel MOSFET
• Voltage - Supply: 4.5 V ~ 30 V
• Logic Voltage - VIL, VIH: 0.8V, 2.4V
• Current - Peak Output (Source, Sink): 9A, 9A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 25ns, 23ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-VDFN Exposed Pad
• Supplier Device Package: 6-DFN (4x5)

패키지: 6-VDFN Exposed Pad

IXCP02M45A

IXYS

IC CURRENT REGULATOR TO220AB

• Function: Current Regulator
• Sensing Method: -
• Accuracy: -
• Voltage - Input: -
• Current - Output: 2mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

패키지: TO-220-3

XOD17-12B

IXYS

SENSOR MONOCRYSTALLINE MOD 6X20

• Power (Watts) - Max: 20mW
• Current @ Pmpp: 39.6mA
• Voltage @ Pmpp: 505mV
• Current Short Circuit (Isc): 42mA
• Type: Monocrystalline
• Voltage - Open Circuit: 630mV
• Operating Temperature: -40°C ~ 85°C
• Package / Case: Cells
• Size / Dimension: 0.787" L x 0.236" W (20.00mm x 6.00mm)

패키지: Cells

IXYN110N120C4

IXYS

IGBT 1200V 110A GEN4 XPT SOT227B

• IGBT Type: -
• Configuration: Single
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 220 A
• Power - Max: 830 W
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A
• Current - Collector Cutoff (Max): 50 µA
• Input Capacitance (Cies) @ Vce: 5.42 nF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

패키지: -

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IXYN120N65C3D1

IXYS

IGBT PT 650V 190A SOT227B

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 190 A
• Current - Collector Pulsed (Icm): 620 A
• Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 100A
• Power - Max: 830 W
• Switching Energy: 1.25mJ (on), 500µJ (off)
• Input Type: Standard
• Gate Charge: 265 nC
• Td (on/off) @ 25°C: 28ns/127ns
• Test Condition: 400V, 50A, 2Ohm, 15V
• Reverse Recovery Time (trr): 29 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227B

패키지: -

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