페이지 12 - Infineon Technologies 제품 - 다이오드 - 정류기 - 단일 | Heisener Electronics
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Infineon Technologies 제품 - 다이오드 - 정류기 - 단일

기록 805
페이지  12/29
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
D711N65TXPSA1
Infineon Technologies

DIODE GEN PURP 6.5KV 1070A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 6500 V
  • Current - Average Rectified (Io): 1070A
  • Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 mA @ 6500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 160°C
패키지: -
Request a Quote
6500 V
1070A
1.9 V @ 1200 A
Standard Recovery >500ns, > 200mA (Io)
-
50 mA @ 6500 V
-
Clamp On
DO-200AB, B-PUK
-
-40°C ~ 160°C
IDC40D120T6MX1SA4
Infineon Technologies

DIODE GP 1.2KV 75A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 75A
  • Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 75 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 14 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
Request a Quote
1200 V
75A
2.05 V @ 75 A
Standard Recovery >500ns, > 200mA (Io)
-
14 µA @ 1200 V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
D121N20BXPSA1
Infineon Technologies

DIODE GEN PURP 2KV 230A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2000 V
  • Current - Average Rectified (Io): 230A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 2000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 180°C
패키지: -
Request a Quote
2000 V
230A
-
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 2000 V
-
Stud Mount
DO-205AA, DO-8, Stud
-
-40°C ~ 180°C
ND260N14KHPSA1
Infineon Technologies

DIODE GP 1.4KV 260A PB50ND-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400 V
  • Current - Average Rectified (Io): 260A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 mA @ 1400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: BG-PB50ND-1
  • Operating Temperature - Junction: -40°C ~ 135°C
패키지: -
Request a Quote
1400 V
260A
-
Standard Recovery >500ns, > 200mA (Io)
-
30 mA @ 1400 V
-
Chassis Mount
Module
BG-PB50ND-1
-40°C ~ 135°C
IDH12SG60CXKSA2
Infineon Technologies

DIODE SIL CARB 600V 12A TO220-1

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 12 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 600 V
  • Capacitance @ Vr, F: 310pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2-1
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
재고1,503
600 V
12A
2.1 V @ 12 A
No Recovery Time > 500mA (Io)
0 ns
100 µA @ 600 V
310pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-1
-55°C ~ 175°C
GATELEAD28133HPSA1
Infineon Technologies

ACCY GATE LEAD FOR MODULE

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
SIDC38D60C8X1SA1
Infineon Technologies

DIODE GEN PURP 600V 150A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 150 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: -
Request a Quote
600 V
150A
1.9 V @ 150 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-40°C ~ 150°C
PX8895EDQGG005XUMA1
Infineon Technologies

LED PX8895EDQGG005XUMA1

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
ND350N12KHPSA1
Infineon Technologies

DIODE GP 1.2KV 350A PB50ND-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 350A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 mA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: BG-PB50ND-1
  • Operating Temperature - Junction: -40°C ~ 135°C
패키지: -
Request a Quote
1200 V
350A
-
Standard Recovery >500ns, > 200mA (Io)
-
30 mA @ 1200 V
-
Chassis Mount
Module
BG-PB50ND-1
-40°C ~ 135°C
SIDC05D60C8X7SA2
Infineon Technologies

DIODE GEN PURP 600V 15A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 15 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
Request a Quote
600 V
15A
1.95 V @ 15 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-40°C ~ 175°C
SIDC03D60F6X7SA1
Infineon Technologies

DIODE GEN PURP 600V 6A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
Request a Quote
600 V
6A
1.6 V @ 6 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-40°C ~ 175°C
BAS4002S-02LRHE6327
Infineon Technologies

DIODE SCHOTT 40V 200MA TSLP-2-17

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 200 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 40 V
  • Capacitance @ Vr, F: 7pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-882
  • Supplier Device Package: PG-TSLP-2-17
  • Operating Temperature - Junction: 150°C
패키지: -
Request a Quote
40 V
200mA
550 mV @ 200 mA
Small Signal =< 200mA (Io), Any Speed
-
10 µA @ 40 V
7pF @ 5V, 1MHz
Surface Mount
SOD-882
PG-TSLP-2-17
150°C
SIDC161D170HX1SA2
Infineon Technologies

DIODE GP 1.7KV 300A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1700 V
  • Current - Average Rectified (Io): 300A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 300 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 1700 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
Request a Quote
1700 V
300A
1.8 V @ 300 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 1700 V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SDT05S60XK
Infineon Technologies

DIODE SIL CARB 600V 5A TO220-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 200 µA @ 600 V
  • Capacitance @ Vr, F: 170pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
Request a Quote
600 V
5A
1.7 V @ 5 A
No Recovery Time > 500mA (Io)
0 ns
200 µA @ 600 V
170pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
D2601N90TXPSA1
Infineon Technologies

DIODE GEN PURP 9KV 3040A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 9000 V
  • Current - Average Rectified (Io): 3040A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 mA @ 9000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 160°C
패키지: -
Request a Quote
9000 V
3040A
-
Standard Recovery >500ns, > 200mA (Io)
-
100 mA @ 9000 V
-
Chassis Mount
DO-200AE
-
-40°C ~ 160°C
D711N60TXPSA1
Infineon Technologies

DIODE GEN PURP 6KV 1070A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 6000 V
  • Current - Average Rectified (Io): 1070A
  • Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 mA @ 6000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 160°C
패키지: -
Request a Quote
6000 V
1070A
1.9 V @ 1200 A
Standard Recovery >500ns, > 200mA (Io)
-
50 mA @ 6000 V
-
Clamp On
DO-200AB, B-PUK
-
-40°C ~ 160°C
IDH06SG60CXKSA2
Infineon Technologies

DIODE SIL CARB 600V 6A TO220-2-1

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 6 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 600 V
  • Capacitance @ Vr, F: 130pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2-1
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
재고219
600 V
6A
2.3 V @ 6 A
No Recovery Time > 500mA (Io)
0 ns
50 µA @ 600 V
130pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-1
-55°C ~ 175°C
IDC51D120T6MX1SA3
Infineon Technologies

DIODE GP 1.2KV 100A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 100A
  • Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 100 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 18 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
Request a Quote
1200 V
100A
2.05 V @ 100 A
Standard Recovery >500ns, > 200mA (Io)
-
18 µA @ 1200 V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
D170U25CXPSA1
Infineon Technologies

DIODE GEN PURP 2.5KV 210A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2500 V
  • Current - Average Rectified (Io): 210A
  • Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 650 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 mA @ 2500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 140°C
패키지: -
Request a Quote
2500 V
210A
2.15 V @ 650 A
Standard Recovery >500ns, > 200mA (Io)
-
5 mA @ 2500 V
-
Stud Mount
DO-205AA, DO-8, Stud
-
-40°C ~ 140°C
SIDC10D120H8X1SA2
Infineon Technologies

DIODE GP 1.2KV 15A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 7.5 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
Request a Quote
1200 V
15A
1.97 V @ 7.5 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 1200 V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
D291S45TXPSA1
Infineon Technologies

DIODE GEN PURP 4.5KV 445A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4500 V
  • Current - Average Rectified (Io): 445A
  • Voltage - Forward (Vf) (Max) @ If: 4.15 V @ 1200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 mA @ 4500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 125°C
패키지: -
Request a Quote
4500 V
445A
4.15 V @ 1200 A
Standard Recovery >500ns, > 200mA (Io)
-
50 mA @ 4500 V
-
Clamp On
DO-200AB, B-PUK
-
-40°C ~ 125°C
PX3746HDNSM1401XTMA1
Infineon Technologies

LED PX3746HDNSM1401XTMA1

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
SIDC53D120H8X1SA1
Infineon Technologies

DIODE GP 1.2KV 100A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 100A
  • Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 100 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
Request a Quote
1200 V
100A
1.97 V @ 100 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 1200 V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
IDC40S120C5X7SA1
Infineon Technologies

SIC CHIP

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
D400N20BXPSA1
Infineon Technologies

DIODE GP 1.2KV 400A DSW41-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 400A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: BG-DSW41-1
  • Supplier Device Package: BG-DSW41-1
  • Operating Temperature - Junction: 180°C (Max)
패키지: -
Request a Quote
1200 V
400A
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Stud Mount
BG-DSW41-1
BG-DSW41-1
180°C (Max)
IDD08SG60CXTMA2
Infineon Technologies

DIODE SIL CARB 600V 8A TO252-3

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 8 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 70 µA @ 600 V
  • Capacitance @ Vr, F: 240pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
재고7,050
600 V
8A
2.1 V @ 8 A
No Recovery Time > 500mA (Io)
0 ns
70 µA @ 600 V
240pF @ 1V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-TO252-3
-55°C ~ 175°C
D452N14EXPSA1
Infineon Technologies

DIODE GEN PURP 1.4KV 450A FL54

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400 V
  • Current - Average Rectified (Io): 450A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 mA @ 1400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Screw Mount
  • Package / Case: Nonstandard
  • Supplier Device Package: FL54
  • Operating Temperature - Junction: -40°C ~ 180°C
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1400 V
450A
-
Standard Recovery >500ns, > 200mA (Io)
-
50 mA @ 1400 V
-
Screw Mount
Nonstandard
FL54
-40°C ~ 180°C
SIDC04D60F6X1SA3
Infineon Technologies

DIODE GP 600V 9A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 9A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -40°C ~ 150°C
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600 V
9A
1.6 V @ 9 A
Fast Recovery =< 500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 150°C