페이지 24 - Infineon Technologies 제품 - 다이오드 - 정류기 - 단일

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
BAS 3005A-02V E6327	Infineon Technologies	DIODE SCHOTTKY 30V 500MA SC79-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 500mA (DC) Voltage - Forward (Vf) (Max) @ If: 500mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300µA @ 30V Capacitance @ Vr, F: 15pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: PG-SC79-2 Operating Temperature - Junction: -55°C ~ 125°C	패키지: SC-79, SOD-523	재고7,264	30V	500mA (DC)	500mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 30V	15pF @ 5V, 1MHz	Surface Mount	SC-79, SOD-523	PG-SC79-2	-55°C ~ 125°C
BAS 3020B E6327	Infineon Technologies	DIODE SCHOTTKY 30V 2A SOT363-6 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 600mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 30V Capacitance @ Vr, F: 70pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6 Operating Temperature - Junction: -55°C ~ 125°C	패키지: 6-VSSOP, SC-88, SOT-363	재고5,840	30V	2A (DC)	600mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 30V	70pF @ 1V, 1MHz	Surface Mount	6-VSSOP, SC-88, SOT-363	PG-SOT363-6	-55°C ~ 125°C
BAS16WE6327HTSA1	Infineon Technologies	DIODE GEN PURP 80V 250MA SOT323 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 1µA @ 75V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3 Operating Temperature - Junction: 150°C (Max)	패키지: SC-70, SOT-323	재고5,984	80V	250mA (DC)	1.25V @ 150mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	1µA @ 75V	2pF @ 0V, 1MHz	Surface Mount	SC-70, SOT-323	PG-SOT323-3	150°C (Max)
BAT 64 B5003	Infineon Technologies	DIODE SCHOTTKY 40V 120MA SOT23-3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 120mA Voltage - Forward (Vf) (Max) @ If: 750mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 2µA @ 30V Capacitance @ Vr, F: 6pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3 Operating Temperature - Junction: 150°C (Max)	패키지: TO-236-3, SC-59, SOT-23-3	재고2,368	40V	120mA	750mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 30V	6pF @ 1V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3	150°C (Max)
BAT 54 B5003	Infineon Technologies	DIODE SCHOTTKY 30V 200MA SOT23-3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 2µA @ 25V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3 Operating Temperature - Junction: 150°C (Max)	패키지: TO-236-3, SC-59, SOT-23-3	재고6,096	30V	200mA (DC)	800mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 25V	10pF @ 1V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3	150°C (Max)
BAS 70 B5003	Infineon Technologies	DIODE SCHOTTKY 70V 70MA SOT23-3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70V Current - Average Rectified (Io): 70mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 100ps Current - Reverse Leakage @ Vr: 100nA @ 50V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3 Operating Temperature - Junction: -55°C ~ 125°C	패키지: TO-236-3, SC-59, SOT-23-3	재고2,976	70V	70mA (DC)	1V @ 15mA	Small Signal =< 200mA (Io), Any Speed	100ps	100nA @ 50V	2pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3	-55°C ~ 125°C
BAS 40 B5003	Infineon Technologies	DIODE SCHOTTKY 40V 120MA SOT23-3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 120mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 100ps Current - Reverse Leakage @ Vr: 1µA @ 30V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3 Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-236-3, SC-59, SOT-23-3	재고2,592	40V	120mA (DC)	1V @ 40mA	Small Signal =< 200mA (Io), Any Speed	100ps	1µA @ 30V	5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3	-55°C ~ 150°C
BAS 3005B-02V E6327	Infineon Technologies	DIODE SCHOTTKY 30V 500MA SC79-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 500mA (DC) Voltage - Forward (Vf) (Max) @ If: 620mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25µA @ 30V Capacitance @ Vr, F: 10pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: PG-SC79-2 Operating Temperature - Junction: -55°C ~ 125°C	패키지: SC-79, SOD-523	재고3,456	30V	500mA (DC)	620mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	25µA @ 30V	10pF @ 5V, 1MHz	Surface Mount	SC-79, SOD-523	PG-SC79-2	-55°C ~ 125°C
BAS 16 B5003	Infineon Technologies	DIODE GEN PURP 80V 250MA SOT23-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 1µA @ 75V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3 Operating Temperature - Junction: 150°C (Max)	패키지: TO-236-3, SC-59, SOT-23-3	재고7,488	80V	250mA (DC)	1.25V @ 150mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	1µA @ 75V	2pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3	150°C (Max)
SIDC85D170H	Infineon Technologies	DIODE GEN PURP 1.7KV 150A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1700V Current - Average Rectified (Io): 150A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 150A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1700V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	패키지: Die	재고4,032	1700V	150A (DC)	1.8V @ 150A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1700V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC81D60E6	Infineon Technologies	DIODE GEN PURP 600V 200A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 200A (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	패키지: Die	재고4,960	600V	200A (DC)	1.25V @ 200A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC81D120H6	Infineon Technologies	DIODE GEN PURP 1.2KV 150A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 150A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	패키지: Die	재고6,128	1200V	150A (DC)	1.6V @ 150A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC81D120F6	Infineon Technologies	DIODE GEN PURP 1.2KV 100A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 100A (DC) Voltage - Forward (Vf) (Max) @ If: 2.1V @ 100A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	패키지: Die	재고3,424	1200V	100A (DC)	2.1V @ 100A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC81D120E6	Infineon Technologies	DIODE GEN PURP 1.2KV 100A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 100A (DC) Voltage - Forward (Vf) (Max) @ If: 1.9V @ 100A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	패키지: Die	재고5,296	1200V	100A (DC)	1.9V @ 100A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC78D170H	Infineon Technologies	DIODE GEN PURP 1.7KV 150A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1700V Current - Average Rectified (Io): 150A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 150A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1700V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	패키지: Die	재고3,536	1700V	150A (DC)	1.8V @ 150A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1700V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC73D170E6	Infineon Technologies	DIODE GEN PURP 1.7KV 100A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1700V Current - Average Rectified (Io): 100A (DC) Voltage - Forward (Vf) (Max) @ If: 2.15V @ 100A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1700V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C	패키지: Die	재고6,528	1700V	100A (DC)	2.15V @ 100A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1700V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
SIDC59D170H	Infineon Technologies	DIODE GEN PURP 1.7KV 100A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1700V Current - Average Rectified (Io): 100A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 100A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1700V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	패키지: Die	재고4,448	1700V	100A (DC)	1.8V @ 100A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1700V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC56D60E6	Infineon Technologies	DIODE GEN PURP 600V 150A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 150A (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	패키지: Die	재고6,832	600V	150A (DC)	1.25V @ 150A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC56D170E6	Infineon Technologies	DIODE GEN PURP 1.7KV 75A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1700V Current - Average Rectified (Io): 75A (DC) Voltage - Forward (Vf) (Max) @ If: 2.15V @ 75A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1700V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 150°C	패키지: Die	재고3,872	1700V	75A (DC)	2.15V @ 75A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1700V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 150°C
SIDC56D120F6	Infineon Technologies	DIODE GEN PURP 1.2KV 75A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 75A (DC) Voltage - Forward (Vf) (Max) @ If: 2.1V @ 75A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	패키지: Die	재고7,472	1200V	75A (DC)	2.1V @ 75A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC56D120E6	Infineon Technologies	DIODE GEN PURP 1.2KV 75A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 75A (DC) Voltage - Forward (Vf) (Max) @ If: 1.9V @ 75A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	패키지: Die	재고3,456	1200V	75A (DC)	1.9V @ 75A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC53D120H6	Infineon Technologies	DIODE GEN PURP 1.2KV 100A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 100A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 100A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	패키지: Die	재고4,432	1200V	100A (DC)	1.6V @ 100A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC50D60C6	Infineon Technologies	DIODE GEN PURP 600V 200A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 200A (DC) Voltage - Forward (Vf) (Max) @ If: 1.9V @ 200A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C	패키지: Die	재고2,896	600V	200A (DC)	1.9V @ 200A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
SIDC46D170H	Infineon Technologies	DIODE GEN PURP 1.7KV 75A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1700V Current - Average Rectified (Io): 75A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 75A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1700V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	패키지: Die	재고3,984	1700V	75A (DC)	1.8V @ 75A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1700V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC42D60E6	Infineon Technologies	DIODE GEN PURP 600V 100A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 100A (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 100A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	패키지: Die	재고6,512	600V	100A (DC)	1.25V @ 100A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC42D170E6	Infineon Technologies	DIODE GEN PURP 1.7KV 50A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1700V Current - Average Rectified (Io): 50A (DC) Voltage - Forward (Vf) (Max) @ If: 2.15V @ 50A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1700V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 150°C	패키지: Die	재고6,992	1700V	50A (DC)	2.15V @ 50A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1700V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 150°C
SIDC42D120H6	Infineon Technologies	DIODE GEN PURP 1.2KV 75A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 75A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 75A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	패키지: Die	재고7,184	1200V	75A (DC)	1.6V @ 75A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC42D120F6	Infineon Technologies	DIODE GEN PURP 1.2KV 50A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 50A (DC) Voltage - Forward (Vf) (Max) @ If: 2.1V @ 50A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	패키지: Die	재고6,960	1200V	50A (DC)	2.1V @ 50A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C

BAS 3005A-02V E6327

Infineon Technologies

DIODE SCHOTTKY 30V 500MA SC79-2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 500mA (DC)
Voltage - Forward (Vf) (Max) @ If: 500mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300µA @ 30V
Capacitance @ Vr, F: 15pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: -55°C ~ 125°C

패키지: SC-79, SOD-523

재고7,264

30V

500mA (DC)

500mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

-

300µA @ 30V

15pF @ 5V, 1MHz

Surface Mount

SC-79, SOD-523

PG-SC79-2

-55°C ~ 125°C

BAS 3020B E6327

Infineon Technologies

DIODE SCHOTTKY 30V 2A SOT363-6

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 2A (DC)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 30V
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6
Operating Temperature - Junction: -55°C ~ 125°C

패키지: 6-VSSOP, SC-88, SOT-363

재고5,840

30V

2A (DC)

600mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 30V

70pF @ 1V, 1MHz

Surface Mount

6-VSSOP, SC-88, SOT-363

PG-SOT363-6

-55°C ~ 125°C

BAS16WE6327HTSA1

Infineon Technologies

DIODE GEN PURP 80V 250MA SOT323

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 250mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 1µA @ 75V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3
Operating Temperature - Junction: 150°C (Max)

패키지: SC-70, SOT-323

재고5,984

80V

250mA (DC)

1.25V @ 150mA

Fast Recovery =< 500ns, > 200mA (Io)

4ns

1µA @ 75V

2pF @ 0V, 1MHz

Surface Mount

SC-70, SOT-323

PG-SOT323-3

150°C (Max)

BAT 64 B5003

Infineon Technologies

DIODE SCHOTTKY 40V 120MA SOT23-3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 120mA
Voltage - Forward (Vf) (Max) @ If: 750mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 2µA @ 30V
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3
Operating Temperature - Junction: 150°C (Max)

패키지: TO-236-3, SC-59, SOT-23-3

재고2,368

40V

120mA

750mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

5ns

2µA @ 30V

6pF @ 1V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

150°C (Max)

BAT 54 B5003

Infineon Technologies

DIODE SCHOTTKY 30V 200MA SOT23-3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 2µA @ 25V
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3
Operating Temperature - Junction: 150°C (Max)

패키지: TO-236-3, SC-59, SOT-23-3

재고6,096

30V

200mA (DC)

800mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

5ns

2µA @ 25V

10pF @ 1V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

150°C (Max)

BAS 70 B5003

Infineon Technologies

DIODE SCHOTTKY 70V 70MA SOT23-3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 70V
Current - Average Rectified (Io): 70mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100ps
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3
Operating Temperature - Junction: -55°C ~ 125°C

패키지: TO-236-3, SC-59, SOT-23-3

재고2,976

70V

70mA (DC)

1V @ 15mA

Small Signal =< 200mA (Io), Any Speed

100ps

100nA @ 50V

2pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

-55°C ~ 125°C

BAS 40 B5003

Infineon Technologies

DIODE SCHOTTKY 40V 120MA SOT23-3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 120mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100ps
Current - Reverse Leakage @ Vr: 1µA @ 30V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-236-3, SC-59, SOT-23-3

재고2,592

40V

120mA (DC)

1V @ 40mA

Small Signal =< 200mA (Io), Any Speed

100ps

1µA @ 30V

5pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

-55°C ~ 150°C

BAS 3005B-02V E6327

Infineon Technologies

DIODE SCHOTTKY 30V 500MA SC79-2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 500mA (DC)
Voltage - Forward (Vf) (Max) @ If: 620mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25µA @ 30V
Capacitance @ Vr, F: 10pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: -55°C ~ 125°C

패키지: SC-79, SOD-523

재고3,456

30V

500mA (DC)

620mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

-

25µA @ 30V

10pF @ 5V, 1MHz

Surface Mount

SC-79, SOD-523

PG-SC79-2

-55°C ~ 125°C

BAS 16 B5003

Infineon Technologies

DIODE GEN PURP 80V 250MA SOT23-3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 250mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 1µA @ 75V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3
Operating Temperature - Junction: 150°C (Max)

패키지: TO-236-3, SC-59, SOT-23-3

재고7,488

80V

250mA (DC)

1.25V @ 150mA

Fast Recovery =< 500ns, > 200mA (Io)

4ns

1µA @ 75V

2pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

150°C (Max)

SIDC85D170H

Infineon Technologies

DIODE GEN PURP 1.7KV 150A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1700V
Current - Average Rectified (Io): 150A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 150A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 1700V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

패키지: Die

재고4,032

1700V

150A (DC)

1.8V @ 150A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 1700V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

SIDC81D60E6

Infineon Technologies

DIODE GEN PURP 600V 200A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 200A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

패키지: Die

재고4,960

600V

200A (DC)

1.25V @ 200A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 600V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

SIDC81D120H6

Infineon Technologies

DIODE GEN PURP 1.2KV 150A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 150A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

패키지: Die

재고6,128

1200V

150A (DC)

1.6V @ 150A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 1200V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

SIDC81D120F6

Infineon Technologies

DIODE GEN PURP 1.2KV 100A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 100A (DC)
Voltage - Forward (Vf) (Max) @ If: 2.1V @ 100A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

패키지: Die

재고3,424

1200V

100A (DC)

2.1V @ 100A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 1200V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

SIDC81D120E6

Infineon Technologies

DIODE GEN PURP 1.2KV 100A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 100A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 100A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

패키지: Die

재고5,296

1200V

100A (DC)

1.9V @ 100A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 1200V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

SIDC78D170H

Infineon Technologies

DIODE GEN PURP 1.7KV 150A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1700V
Current - Average Rectified (Io): 150A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 150A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 1700V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

패키지: Die

재고3,536

1700V

150A (DC)

1.8V @ 150A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 1700V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

SIDC73D170E6

Infineon Technologies

DIODE GEN PURP 1.7KV 100A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1700V
Current - Average Rectified (Io): 100A (DC)
Voltage - Forward (Vf) (Max) @ If: 2.15V @ 100A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 1700V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C

패키지: Die

재고6,528

1700V

100A (DC)

2.15V @ 100A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 1700V

-

Surface Mount

Die

Sawn on foil

-40°C ~ 175°C

SIDC59D170H

Infineon Technologies

DIODE GEN PURP 1.7KV 100A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1700V
Current - Average Rectified (Io): 100A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 100A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 1700V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

패키지: Die

재고4,448

1700V

100A (DC)

1.8V @ 100A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 1700V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

SIDC56D60E6

Infineon Technologies

DIODE GEN PURP 600V 150A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 150A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

패키지: Die

재고6,832

600V

150A (DC)

1.25V @ 150A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 600V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

SIDC56D170E6

Infineon Technologies

DIODE GEN PURP 1.7KV 75A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1700V
Current - Average Rectified (Io): 75A (DC)
Voltage - Forward (Vf) (Max) @ If: 2.15V @ 75A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 1700V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 150°C

패키지: Die

재고3,872

1700V

75A (DC)

2.15V @ 75A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 1700V

-

Surface Mount

Die

Sawn on foil

-40°C ~ 150°C

SIDC56D120F6

Infineon Technologies

DIODE GEN PURP 1.2KV 75A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 75A (DC)
Voltage - Forward (Vf) (Max) @ If: 2.1V @ 75A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

패키지: Die

재고7,472

1200V

75A (DC)

2.1V @ 75A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 1200V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

SIDC56D120E6

Infineon Technologies

DIODE GEN PURP 1.2KV 75A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 75A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 75A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

패키지: Die

재고3,456

1200V

75A (DC)

1.9V @ 75A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 1200V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

SIDC53D120H6

Infineon Technologies

DIODE GEN PURP 1.2KV 100A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 100A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 100A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

패키지: Die

재고4,432

1200V

100A (DC)

1.6V @ 100A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 1200V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

SIDC50D60C6

Infineon Technologies

DIODE GEN PURP 600V 200A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 200A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 200A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C

패키지: Die

재고2,896

600V

200A (DC)

1.9V @ 200A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 600V

-

Surface Mount

Die

Sawn on foil

-40°C ~ 175°C

SIDC46D170H

Infineon Technologies

DIODE GEN PURP 1.7KV 75A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1700V
Current - Average Rectified (Io): 75A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 75A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 1700V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

패키지: Die

재고3,984

1700V

75A (DC)

1.8V @ 75A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 1700V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

SIDC42D60E6

Infineon Technologies

DIODE GEN PURP 600V 100A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 100A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 100A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

패키지: Die

재고6,512

600V

100A (DC)

1.25V @ 100A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 600V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

SIDC42D170E6

Infineon Technologies

DIODE GEN PURP 1.7KV 50A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1700V
Current - Average Rectified (Io): 50A (DC)
Voltage - Forward (Vf) (Max) @ If: 2.15V @ 50A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 1700V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 150°C

패키지: Die

재고6,992

1700V

50A (DC)

2.15V @ 50A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 1700V

-

Surface Mount

Die

Sawn on foil

-40°C ~ 150°C

SIDC42D120H6

Infineon Technologies

DIODE GEN PURP 1.2KV 75A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 75A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 75A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

패키지: Die

재고7,184

1200V

75A (DC)

1.6V @ 75A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 1200V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

SIDC42D120F6

Infineon Technologies

DIODE GEN PURP 1.2KV 50A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 50A (DC)
Voltage - Forward (Vf) (Max) @ If: 2.1V @ 50A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

패키지: Die

재고6,960

1200V

50A (DC)

2.1V @ 50A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 1200V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C