페이지 16 - Infineon Technologies 제품 - 트랜지스터 - FET, MOSFET - 어레이 | Heisener Electronics
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Infineon Technologies 제품 - 트랜지스터 - FET, MOSFET - 어레이

기록 506
페이지  16/19
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부품 번호
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설명
패키지
재고
수량
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IRF8513TRPBF
Infineon Technologies

MOSFET 2N-CH 30V 8A/11A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A, 11A
  • Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 766pF @ 15V
  • Power - Max: 1.5W, 2.4W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고180,408
Logic Level Gate
30V
8A, 11A
15.5 mOhm @ 8A, 10V
2.35V @ 25µA
8.6nC @ 4.5V
766pF @ 15V
1.5W, 2.4W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot IRF8513PBF
Infineon Technologies

MOSFET 2N-CH 30V 8A/11A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A, 11A
  • Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 766pF @ 15V
  • Power - Max: 1.5W, 2.4W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고48,384
Logic Level Gate
30V
8A, 11A
15.5 mOhm @ 8A, 10V
2.35V @ 25µA
8.6nC @ 4.5V
766pF @ 15V
1.5W, 2.4W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot IRF8313PBF
Infineon Technologies

MOSFET 2N-CH 30V 9.7A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9.7A
  • Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 9.7A, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고10,800
Logic Level Gate
30V
9.7A
15.5 mOhm @ 9.7A, 10V
2.35V @ 25µA
90nC @ 4.5V
760pF @ 15V
2W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
BTS7904SAKSA1
Infineon Technologies

MOSFET N/P-CH 55V/30V 40A TO220

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 55V, 30V
  • Current - Continuous Drain (Id) @ 25°C: 40A
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 40µA
  • Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V
  • Power - Max: 69W, 96W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-220-5
  • Supplier Device Package: PG-TO220-5-13
패키지: TO-220-5
재고2,224
Logic Level Gate
55V, 30V
40A
12 mOhm @ 20A, 10V
2.2V @ 40µA
123nC @ 10V
6100pF @ 25V
69W, 96W
-55°C ~ 150°C (TJ)
Surface Mount
TO-220-5
PG-TO220-5-13
BTS7904BATMA1
Infineon Technologies

MOSFET N/P-CH 55V/30V 40A TO263

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 55V, 30V
  • Current - Continuous Drain (Id) @ 25°C: 40A
  • Rds On (Max) @ Id, Vgs: 11.7 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 40µA
  • Gate Charge (Qg) (Max) @ Vgs: 121nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V
  • Power - Max: 69W, 96W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
  • Supplier Device Package: PG-TO263-5
패키지: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
재고3,472
Logic Level Gate
55V, 30V
40A
11.7 mOhm @ 20A, 10V
2.2V @ 40µA
121nC @ 10V
6100pF @ 25V
69W, 96W
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
PG-TO263-5
hot BSD223P L6327
Infineon Technologies

MOSFET 2P-CH 20V 0.39A SOT363

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 390mA
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 390mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 1.5µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 15V
  • Power - Max: 250mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
패키지: 6-VSSOP, SC-88, SOT-363
재고72,000
Logic Level Gate
20V
390mA
1.2 Ohm @ 390mA, 4.5V
1.2V @ 1.5µA
0.62nC @ 4.5V
56pF @ 15V
250mW
-55°C ~ 150°C (TJ)
Surface Mount
6-VSSOP, SC-88, SOT-363
PG-SOT363-6
hot 2N7002DW L6327
Infineon Technologies

MOSFET 2N-CH 60V 0.3A SOT363

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 300mA
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
패키지: 6-VSSOP, SC-88, SOT-363
재고72,000
Logic Level Gate
60V
300mA
3 Ohm @ 500mA, 10V
2.5V @ 250µA
0.6nC @ 10V
20pF @ 25V
500mW
-55°C ~ 150°C (TJ)
Surface Mount
6-VSSOP, SC-88, SOT-363
PG-SOT363-6
IRF7750TRPBF
Infineon Technologies

MOSFET 2P-CH 20V 4.7A 8TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
패키지: 8-TSSOP (0.173", 4.40mm Width)
재고6,576
Logic Level Gate
20V
4.7A
30 mOhm @ 4.7A, 4.5V
1.2V @ 250µA
39nC @ 5V
1700pF @ 15V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
IRF7756TRPBF
Infineon Technologies

MOSFET 2P-CH 12V 4.3A 8TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.3A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
패키지: 8-TSSOP (0.173", 4.40mm Width)
재고7,024
Logic Level Gate
12V
4.3A
40 mOhm @ 4.3A, 4.5V
900mV @ 250µA
18nC @ 4.5V
1400pF @ 10V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot IRF7751TRPBF
Infineon Technologies

MOSFET 2P-CH 30V 4.5A 8TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1464pF @ 25V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
패키지: 8-TSSOP (0.173", 4.40mm Width)
재고31,176
Logic Level Gate
30V
4.5A
35 mOhm @ 4.5A, 10V
2.5V @ 250µA
44nC @ 10V
1464pF @ 25V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
IRF7757TRPBF
Infineon Technologies

MOSFET 2N-CH 20V 4.8A 8TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.8A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 15V
  • Power - Max: 1.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
패키지: 8-TSSOP (0.173", 4.40mm Width)
재고7,488
Logic Level Gate
20V
4.8A
35 mOhm @ 4.8A, 4.5V
1.2V @ 250µA
23nC @ 4.5V
1340pF @ 15V
1.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot IRFI4024H-117P
Infineon Technologies

MOSFET 2N-CH 55V 11A TO-220FP-5

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 11A
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 7.7A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 50V
  • Power - Max: 14W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-5 Full Pack
  • Supplier Device Package: TO-220-5 Full-Pak
패키지: TO-220-5 Full Pack
재고9,636
Standard
55V
11A
60 mOhm @ 7.7A, 10V
4V @ 25µA
13nC @ 10V
320pF @ 50V
14W
-55°C ~ 150°C (TJ)
Through Hole
TO-220-5 Full Pack
TO-220-5 Full-Pak
IRF7750GTRPBF
Infineon Technologies

MOSFET 2P-CH 20V 4.7A 8TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
패키지: 8-TSSOP (0.173", 4.40mm Width)
재고7,776
Logic Level Gate
20V
4.7A
30 mOhm @ 4.7A, 4.5V
1.2V @ 250µA
39nC @ 5V
1700pF @ 15V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
IRF7756GTRPBF
Infineon Technologies

MOSFET 2P-CH 12V 4.3A 8TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.3A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
패키지: 8-TSSOP (0.173", 4.40mm Width)
재고5,488
Logic Level Gate
12V
4.3A
40 mOhm @ 4.3A, 4.5V
900mV @ 250µA
18nC @ 4.5V
1400pF @ 10V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
IRF7754GTRPBF
Infineon Technologies

MOSFET 2P-CH 12V 5.5A 8TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.4A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1984pF @ 6V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
패키지: 8-TSSOP (0.173", 4.40mm Width)
재고3,232
Logic Level Gate
12V
5.5A
25 mOhm @ 5.4A, 4.5V
900mV @ 250µA
22nC @ 4.5V
1984pF @ 6V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
IRF7752GTRPBF
Infineon Technologies

MOSFET 2N-CH 30V 4.6A 8TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.6A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 861pF @ 25V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
패키지: 8-TSSOP (0.173", 4.40mm Width)
재고7,920
Logic Level Gate
30V
4.6A
30 mOhm @ 4.6A, 10V
2V @ 250µA
9nC @ 4.5V
861pF @ 25V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot IRF7751GTRPBF
Infineon Technologies

MOSFET 2P-CH 30V 4.5A 8TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1464pF @ 25V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
패키지: 8-TSSOP (0.173", 4.40mm Width)
재고6,928
Logic Level Gate
30V
4.5A
35 mOhm @ 4.5A, 10V
2.5V @ 250µA
44nC @ 10V
1464pF @ 25V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
IRF7507PBF
Infineon Technologies

MOSFET N/P-CH DUAL 20V MICRO-8

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A, 1.7A
  • Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.7A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V
  • Power - Max: 1.25W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: Micro8?
패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
재고7,952
Logic Level Gate
20V
2.4A, 1.7A
140 mOhm @ 1.7A, 4.5V
700mV @ 250µA (Min)
8nC @ 4.5V
260pF @ 15V
1.25W
-
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Micro8?
hot IRF7555TRPBF
Infineon Technologies

MOSFET 2P-CH 20V 4.3A MICRO8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1066pF @ 10V
  • Power - Max: 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: Micro8?
패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
재고523,824
Logic Level Gate
20V
4.3A
55 mOhm @ 4.3A, 4.5V
1.2V @ 250µA
15nC @ 5V
1066pF @ 10V
1.25W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Micro8?
hot BSO350N03
Infineon Technologies

MOSFET 2N-CH 30V 5A 8DSO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 6µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 15V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8
패키지: 8-SOIC (0.154", 3.90mm Width)
재고32,172
Logic Level Gate
30V
5A
35 mOhm @ 6A, 10V
2V @ 6µA
3.7nC @ 5V
480pF @ 15V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
PG-DSO-8
hot BSO200N03
Infineon Technologies

MOSFET 2N-CH 30V 6.6A 8DSO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.6A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 7.9A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 13µA
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8
패키지: 8-SOIC (0.154", 3.90mm Width)
재고636,780
Logic Level Gate
30V
6.6A
20 mOhm @ 7.9A, 10V
2V @ 13µA
8nC @ 5V
1010pF @ 15V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
PG-DSO-8
hot BSO150N03
Infineon Technologies

MOSFET 2N-CH 30V 7.6A 8DSO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.6A
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 9.1A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 15V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8
패키지: 8-SOIC (0.154", 3.90mm Width)
재고667,368
Standard
30V
7.6A
15 mOhm @ 9.1A, 10V
2V @ 25µA
15nC @ 5V
1890pF @ 15V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
PG-DSO-8
BSO303PNTMA1
Infineon Technologies

MOSFET 2P-CH 30V 8.2A 8DSO

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.2A
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 8.2A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 72.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1761pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: P-DSO-8
패키지: 8-SOIC (0.154", 3.90mm Width)
재고3,648
Logic Level Gate
30V
8.2A
21 mOhm @ 8.2A, 10V
2V @ 100µA
72.5nC @ 10V
1761pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
P-DSO-8
hot BSO615CT
Infineon Technologies

MOSFET N/P-CH 60V 3.1A/2A 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A, 2A
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 3.1A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8
패키지: 8-SOIC (0.154", 3.90mm Width)
재고11,400
Logic Level Gate
60V
3.1A, 2A
110 mOhm @ 3.1A, 10V
2V @ 20µA
22.5nC @ 10V
380pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
PG-DSO-8
BSO4804T
Infineon Technologies

MOSFET 2N-CH 30V 8A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 30µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고3,504
Logic Level Gate
30V
8A
20 mOhm @ 8A, 10V
2V @ 30µA
17nC @ 5V
870pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot IRF7907PBF
Infineon Technologies

MOSFET 2N-CH 30V 9.1A/11A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9.1A, 11A
  • Rds On (Max) @ Id, Vgs: 16.4 mOhm @ 9.1A, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고9,756
Logic Level Gate
30V
9.1A, 11A
16.4 mOhm @ 9.1A, 10V
2.35V @ 25µA
10nC @ 4.5V
850pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
IRF7905PBF
Infineon Technologies

MOSFET 2N-CH 30V 7.8A/8.9A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.8A, 8.9A
  • Rds On (Max) @ Id, Vgs: 21.8 mOhm @ 7.8A, 10V
  • Vgs(th) (Max) @ Id: 2.25V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고5,440
Logic Level Gate
30V
7.8A, 8.9A
21.8 mOhm @ 7.8A, 10V
2.25V @ 25µA
6.9nC @ 4.5V
600pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
IRF7902PBF
Infineon Technologies

MOSFET 2N-CH 30V 6.4A/9.7A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.4A, 9.7A
  • Rds On (Max) @ Id, Vgs: 22.6 mOhm @ 6.4A, 10V
  • Vgs(th) (Max) @ Id: 2.25V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V
  • Power - Max: 1.4W, 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고6,224
Logic Level Gate
30V
6.4A, 9.7A
22.6 mOhm @ 6.4A, 10V
2.25V @ 25µA
6.9nC @ 4.5V
580pF @ 15V
1.4W, 2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO