페이지 279 - Infineon Technologies 제품 - 트랜지스터 - FET, MOSFET - 단일

부품 번호	제조업체	설명	패키지	재고	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRLC8259EB	Infineon Technologies	MOSFET N-CH WAFER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고7,824	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRLC8256ED	Infineon Technologies	MOSFET N-CH WAFER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고2,048	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRLC3813EB	Infineon Technologies	MOSFET N-CH WAFER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고3,920	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFC8721ED	Infineon Technologies	MOSFET N-CH WAFER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고3,312	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFC4768ED	Infineon Technologies	MOSFET N-CH WAFER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고5,920	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFC4668EF	Infineon Technologies	MOSFET N-CH WAFER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고6,160	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFC4668D	Infineon Technologies	MOSFET N-CH WAFER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고4,384	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFC4568EF	Infineon Technologies	MOSFET N-CH WAFER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고7,760	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFC4468ED	Infineon Technologies	MOSFET N-CH WAFER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고2,256	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFC4468D	Infineon Technologies	MOSFET N-CH WAFER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고5,792	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFC4410ZEB	Infineon Technologies	MOSFET N-CH WAFER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고5,376	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFC4368D	Infineon Technologies	MOSFET N-CH WAFER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고4,656	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFC4332ED	Infineon Technologies	MOSFET N-CH WAFER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고6,192	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFC4227ED	Infineon Technologies	MOSFET N-CH WAFER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고3,584	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFC4227EB	Infineon Technologies	MOSFET N-CH WAFER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고3,312	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFC4127ED	Infineon Technologies	MOSFET N-CH WAFER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고3,264	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFC4115ED	Infineon Technologies	MOSFET N-CH WAFER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고2,544	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFC4104EB	Infineon Technologies	MOSFET N-CH WAFER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고5,488	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFC4020D	Infineon Technologies	MOSFET N-CH WAFER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고6,608	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFC3710ZEB	Infineon Technologies	MOSFET N-CH WAFER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고4,880	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFC3206EB	Infineon Technologies	MOSFET N-CH WAFER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고4,032	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFC3205ZEB	Infineon Technologies	MOSFET N-CH WAFER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고6,224	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFC3107EB	Infineon Technologies	MOSFET N-CH WAFER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고3,232	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFC3006EB	Infineon Technologies	MOSFET N-CH WAFER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고4,240	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFC3004EB	Infineon Technologies	MOSFET N-CH WAFER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고6,384	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AUXS20956S	Infineon Technologies	MOSFET N-CH 16SOIC FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고6,832	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AUXMOS20956STR	Infineon Technologies	MOSFET N-CH 16SOIC FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고7,008	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
64-0055PBF	Infineon Technologies	MOSFET N-CH TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4520pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: - Package / Case: -	패키지: -	재고2,256	MOSFET (Metal Oxide)	60V	120A	10V	4V @ 150µA	120nC @ 10V	4520pF @ 50V	±20V	-	230W (Tc)	4.2 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	-	-
IPD60R380E6ATMA2	Infineon Technologies	MOSFET NCH 600V 10.6A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 100V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 3.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고6,944	MOSFET (Metal Oxide)	600V	10.6A (Tc)	10V	3.5V @ 300µA	32nC @ 10V	700pF @ 100V	±20V	Super Junction	83W (Tc)	380 mOhm @ 3.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IPU60R1K4C6BKMA1	Infineon Technologies	MOSFET NCH 600V 3.2A TO251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 100V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): 28.4W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.1A, 10V Operating Temperature: -55°C ~ 155°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	패키지: TO-251-3 Short Leads, IPak, TO-251AA	재고7,664	MOSFET (Metal Oxide)	600V	3.2A (Tc)	10V	3.5V @ 90µA	9.4nC @ 10V	200pF @ 100V	±20V	Super Junction	28.4W (Tc)	1.4 Ohm @ 1.1A, 10V	-55°C ~ 155°C (TJ)	Through Hole	PG-TO251	TO-251-3 Short Leads, IPak, TO-251AA