페이지 12 - Infineon Technologies 제품 - 트랜지스터 - IGBT - 단일 | Heisener Electronics
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Infineon Technologies 제품 - 트랜지스터 - IGBT - 단일

기록 1,429
페이지  12/52
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제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SIGC06T60EX7SA1
Infineon Technologies

IGBT TRENCH FS 600V 10A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 10 A
  • Current - Collector Pulsed (Icm): 30 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 10A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
10 A
30 A
1.9V @ 15V, 10A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IGC15T65QEX1SA1
Infineon Technologies

IGBT TRENCH FS 650V 30A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 2.32V @ 15V, 30A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
650 V
30 A
90 A
2.32V @ 15V, 30A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
SIGC07T60NCX1SA4
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 6 A
  • Current - Collector Pulsed (Icm): 18 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 21ns/110ns
  • Test Condition: 300V, 6A, 54Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
6 A
18 A
2.5V @ 15V, 6A
-
-
Standard
-
21ns/110ns
300V, 6A, 54Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
SIGC07T60NCX1SA1
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 6 A
  • Current - Collector Pulsed (Icm): 18 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 21ns/110ns
  • Test Condition: 300V, 6A, 54Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
6 A
18 A
2.5V @ 15V, 6A
-
-
Standard
-
21ns/110ns
300V, 6A, 54Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
IRGC4066B
Infineon Technologies

IGBT CHIP

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 75 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 150 nC
  • Td (on/off) @ 25°C: 50ns/200ns
  • Test Condition: 400V, 75A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
75 A
-
2.1V @ 15V, 75A
-
-
Standard
150 nC
50ns/200ns
400V, 75A, 10Ohm, 15V
-
-55°C ~ 175°C (TJ)
Surface Mount
Die
Die
IGC27T120T8LX1SA2
Infineon Technologies

IGBT 1200V 25A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 75 A
  • Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 25A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
1200 V
-
75 A
2.07V @ 15V, 25A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IGW15N120H3FKSA1
Infineon Technologies

IGBT TRENCH FS 1200V 30A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
  • Power - Max: 217 W
  • Switching Energy: 1.55mJ
  • Input Type: Standard
  • Gate Charge: 75 nC
  • Td (on/off) @ 25°C: 21ns/260ns
  • Test Condition: 600V, 15A, 35Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-1
패키지: -
재고909
1200 V
30 A
60 A
2.4V @ 15V, 15A
217 W
1.55mJ
Standard
75 nC
21ns/260ns
600V, 15A, 35Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-1
AIKB50N65DF5ATMA1
Infineon Technologies

DISCRETE SWITCHES

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3-2
패키지: -
Request a Quote
650 V
50 A
-
-
-
-
Standard
-
-
-
-
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-3-2
SIGC42T60UNX1SA2
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 48ns/350ns
  • Test Condition: 400V, 50A, 6.8Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
50 A
150 A
3.15V @ 15V, 50A
-
-
Standard
-
48ns/350ns
400V, 50A, 6.8Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
SIGC42T60UNX1SA1
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 48ns/350ns
  • Test Condition: 400V, 50A, 6.8Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
50 A
150 A
3.15V @ 15V, 50A
-
-
Standard
-
48ns/350ns
400V, 50A, 6.8Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
SIGC81T60SNCX7SA1
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 100 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 65ns/450ns
  • Test Condition: 400V, 100A, 3.3Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
100 A
300 A
2.5V @ 15V, 100A
-
-
Standard
-
65ns/450ns
400V, 100A, 3.3Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
AUIRG4PH50S-205
Infineon Technologies

IGBT 1200V TO247-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 141 A
  • Current - Collector Pulsed (Icm): 99 A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 33A
  • Power - Max: 543 W
  • Switching Energy: 16mJ (off)
  • Input Type: Standard
  • Gate Charge: 227 nC
  • Td (on/off) @ 25°C: -/616ns
  • Test Condition: 600V, 33A, 5Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: -
Request a Quote
1200 V
141 A
99 A
1.7V @ 15V, 33A
543 W
16mJ (off)
Standard
227 nC
-/616ns
600V, 33A, 5Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
SGB15N60
Infineon Technologies

IGBT NPT 600V 31A TO263-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 31 A
  • Current - Collector Pulsed (Icm): 62 A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
  • Power - Max: 139 W
  • Switching Energy: 570µJ
  • Input Type: Standard
  • Gate Charge: 76 nC
  • Td (on/off) @ 25°C: 32ns/234ns
  • Test Condition: 400V, 15A, 21Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3-2
패키지: -
Request a Quote
600 V
31 A
62 A
2.4V @ 15V, 15A
139 W
570µJ
Standard
76 nC
32ns/234ns
400V, 15A, 21Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-3-2
IKQB160N75CP2AKSA1
Infineon Technologies

IGBT 750V 200A TO247-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 750 V
  • Current - Collector (Ic) (Max): 200 A
  • Current - Collector Pulsed (Icm): 480 A
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 160A
  • Power - Max: 750 W
  • Switching Energy: 9.7mJ (on), 5.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 610 nC
  • Td (on/off) @ 25°C: 72ns/324ns
  • Test Condition: 450V, 160A, 4.8Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-51
패키지: -
재고648
750 V
200 A
480 A
1.65V @ 15V, 160A
750 W
9.7mJ (on), 5.2mJ (off)
Standard
610 nC
72ns/324ns
450V, 160A, 4.8Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-51
SIGC14T60SNCX7SA2
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 15 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 31ns/261ns
  • Test Condition: 400V, 15A, 21Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
15 A
45 A
2.5V @ 15V, 15A
-
-
Standard
-
31ns/261ns
400V, 15A, 21Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
SIGC14T60SNCX7SA1
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 15 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 31ns/261ns
  • Test Condition: 400V, 15A, 21Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
15 A
45 A
2.5V @ 15V, 15A
-
-
Standard
-
31ns/261ns
400V, 15A, 21Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
IKD06N65ET6ARMA1
Infineon Technologies

IGBT TRENCH FS 650V 9A TO252-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 9 A
  • Current - Collector Pulsed (Icm): 18 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 3A
  • Power - Max: 31 W
  • Switching Energy: 60µJ (on), 30µJ (off)
  • Input Type: Standard
  • Gate Charge: 13.7 nC
  • Td (on/off) @ 25°C: 15ns/35ns
  • Test Condition: 400V, 3A, 47Ohm, 15V
  • Reverse Recovery Time (trr): 30 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
패키지: -
재고23,274
650 V
9 A
18 A
1.9V @ 15V, 3A
31 W
60µJ (on), 30µJ (off)
Standard
13.7 nC
15ns/35ns
400V, 3A, 47Ohm, 15V
30 ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-TO252-3
IRGC4275B
Infineon Technologies

IGBT CHIP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 380 nC
  • Td (on/off) @ 25°C: 130ns/280ns
  • Test Condition: 400V, 200A, 5Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
650 V
-
-
1.9V @ 15V, 200A
-
-
Standard
380 nC
130ns/280ns
400V, 200A, 5Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IRGC4274B
Infineon Technologies

IGBT CHIP

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 150A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 310 nC
  • Td (on/off) @ 25°C: 95ns/220ns
  • Test Condition: 400V, 150A, 5Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
650 V
-
-
1.9V @ 15V, 150A
-
-
Standard
310 nC
95ns/220ns
400V, 150A, 5Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IKD15N60RBTMA1
Infineon Technologies

IGBT TRENCH 600V 30A TO252-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
  • Power - Max: 250 W
  • Switching Energy: 900µJ
  • Input Type: Standard
  • Gate Charge: 90 nC
  • Td (on/off) @ 25°C: 16ns/183ns
  • Test Condition: 400V, 15A, 15Ohm, 15V
  • Reverse Recovery Time (trr): 110 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3-11
패키지: -
Request a Quote
600 V
30 A
45 A
2.1V @ 15V, 15A
250 W
900µJ
Standard
90 nC
16ns/183ns
400V, 15A, 15Ohm, 15V
110 ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-TO252-3-11
IHW20N140R5LXKSA1
Infineon Technologies

HOME APPLIANCES 14

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1400 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
  • Power - Max: 211 W
  • Switching Energy: -, 70µJ (off)
  • Input Type: Standard
  • Gate Charge: 125 nC
  • Td (on/off) @ 25°C: -/150ns
  • Test Condition: 25V, 20A, 2.2Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-44
패키지: -
Request a Quote
1400 V
40 A
60 A
1.9V @ 15V, 20A
211 W
-, 70µJ (off)
Standard
125 nC
-/150ns
25V, 20A, 2.2Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-44
AIGB50N65H5ATMA1
Infineon Technologies

IGBT NPT 650V 50A TO263-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3-2
패키지: -
재고8,511
650 V
50 A
-
-
-
-
Standard
-
-
-
-
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-3-2
F5L200R12N3H3BPSA1
Infineon Technologies

F5L200R12 = IGBT MODULE

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IGD06N65T6ARMA1
Infineon Technologies

IGBT TRENCH FS 650V 9A TO252-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 9 A
  • Current - Collector Pulsed (Icm): 18 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 3A
  • Power - Max: 31 W
  • Switching Energy: 60µJ (on), 30µJ (off)
  • Input Type: Standard
  • Gate Charge: 13.7 nC
  • Td (on/off) @ 25°C: 15ns/35ns
  • Test Condition: 400V, 3A, 47Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
패키지: -
Request a Quote
650 V
9 A
18 A
1.9V @ 15V, 3A
31 W
60µJ (on), 30µJ (off)
Standard
13.7 nC
15ns/35ns
400V, 3A, 47Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-TO252-3
IKWH40N65WR6XKSA1
Infineon Technologies

IGBT TRENCH 650V 75A TO247-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 75 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 40A
  • Power - Max: 175 W
  • Switching Energy: 1.09mJ (on), 570µJ (off)
  • Input Type: Standard
  • Gate Charge: 117 nC
  • Td (on/off) @ 25°C: 37ns/353ns
  • Test Condition: 400V, 40A, 27Ohm, 15V
  • Reverse Recovery Time (trr): 79 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-32
패키지: -
재고738
650 V
75 A
120 A
1.85V @ 15V, 40A
175 W
1.09mJ (on), 570µJ (off)
Standard
117 nC
37ns/353ns
400V, 40A, 27Ohm, 15V
79 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-32
IKFW60N60DH3EXKSA1
Infineon Technologies

IGBT 600V 50A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 53 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
  • Power - Max: 141 W
  • Switching Energy: 1.57mJ (on), 720µJ (off)
  • Input Type: Standard
  • Gate Charge: 210 nC
  • Td (on/off) @ 25°C: 23ns/170ns
  • Test Condition: 400V, 50A, 7Ohm, 15V
  • Reverse Recovery Time (trr): 68 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-AI
패키지: -
Request a Quote
600 V
53 A
150 A
2.7V @ 15V, 50A
141 W
1.57mJ (on), 720µJ (off)
Standard
210 nC
23ns/170ns
400V, 50A, 7Ohm, 15V
68 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-AI
IRGC30B60KB
Infineon Technologies

IGBT CHIP

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 6A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
30 A
-
1.35V @ 15V, 6A
-
-
Standard
-
-
-
-
-
Surface Mount
Die
Die
IKD15N60RFATMA1
Infineon Technologies

IGBT TRENCH FS 600V 30A TO252-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
  • Power - Max: 250 W
  • Switching Energy: 270µJ (on), 250µJ (off)
  • Input Type: Standard
  • Gate Charge: 90 nC
  • Td (on/off) @ 25°C: 13ns/160ns
  • Test Condition: 400V, 15A, 15Ohm, 15V
  • Reverse Recovery Time (trr): 74 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
패키지: -
재고16,824
600 V
30 A
45 A
2.5V @ 15V, 15A
250 W
270µJ (on), 250µJ (off)
Standard
90 nC
13ns/160ns
400V, 15A, 15Ohm, 15V
74 ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-TO252-3