페이지 24 - Infineon Technologies 제품 - 트랜지스터 - IGBT - 단일 | Heisener Electronics
고객 문의
SalesDept@heisener.com 86-755-83210559-843
Language Translation

* Please refer to the English Version as our Official Version.

Infineon Technologies 제품 - 트랜지스터 - IGBT - 단일

기록 1,429
페이지  24/52
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IRGP4066D-EPBF
Infineon Technologies

IGBT 600V 140A 454W TO247AD

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 140A
  • Current - Collector Pulsed (Icm): 225A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
  • Power - Max: 454W
  • Switching Energy: 2.47mJ (on), 2.16mJ (off)
  • Input Type: Standard
  • Gate Charge: 150nC
  • Td (on/off) @ 25°C: 50ns/200ns
  • Test Condition: 400V, 75A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 155ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
패키지: TO-247-3
재고27,888
600V
140A
225A
2.1V @ 15V, 75A
454W
2.47mJ (on), 2.16mJ (off)
Standard
150nC
50ns/200ns
400V, 75A, 10 Ohm, 15V
155ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AD
IKW75N65EH5XKSA1
Infineon Technologies

IGBT 650V 75A FAST DIODE TO247-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 90A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
  • Power - Max: 395W
  • Switching Energy: 2.3mJ (on), 900µJ (off)
  • Input Type: Standard
  • Gate Charge: 160nC
  • Td (on/off) @ 25°C: 28ns/174ns
  • Test Condition: 400V, 75A, 8 Ohm, 15V
  • Reverse Recovery Time (trr): 92ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고7,840
650V
90A
300A
2.1V @ 15V, 75A
395W
2.3mJ (on), 900µJ (off)
Standard
160nC
28ns/174ns
400V, 75A, 8 Ohm, 15V
92ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IKW50N60H3FKSA1
Infineon Technologies

IGBT 600V 100A 333W TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
  • Power - Max: 333W
  • Switching Energy: 2.36mJ
  • Input Type: Standard
  • Gate Charge: 315nC
  • Td (on/off) @ 25°C: 23ns/235ns
  • Test Condition: 400V, 50A, 7 Ohm, 15V
  • Reverse Recovery Time (trr): 130ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고6,560
600V
100A
200A
2.3V @ 15V, 50A
333W
2.36mJ
Standard
315nC
23ns/235ns
400V, 50A, 7 Ohm, 15V
130ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
hot IRGIB15B60KD1P
Infineon Technologies

IGBT 600V 19A 52W TO220FP

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 19A
  • Current - Collector Pulsed (Icm): 38A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
  • Power - Max: 52W
  • Switching Energy: 127µJ (on), 334µJ (off)
  • Input Type: Standard
  • Gate Charge: 56nC
  • Td (on/off) @ 25°C: 30ns/173ns
  • Test Condition: 400V, 15A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): 67ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220AB Full-Pak
패키지: TO-220-3 Full Pack
재고103,464
600V
19A
38A
2.2V @ 15V, 15A
52W
127µJ (on), 334µJ (off)
Standard
56nC
30ns/173ns
400V, 15A, 22 Ohm, 15V
67ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220AB Full-Pak
IKW50N65H5FKSA1
Infineon Technologies

IGBT 650V 80A 305W PG-TO247-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Power - Max: 305W
  • Switching Energy: 520µJ (on), 180µJ (off)
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: 21ns/180ns
  • Test Condition: 400V, 25A, 12 Ohm, 15V
  • Reverse Recovery Time (trr): 57ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고2,528
650V
80A
150A
2.1V @ 15V, 50A
305W
520µJ (on), 180µJ (off)
Standard
120nC
21ns/180ns
400V, 25A, 12 Ohm, 15V
57ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IKW40N65H5FKSA1
Infineon Technologies

IGBT 650V 74A 255W PG-TO247-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 74A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 255W
  • Switching Energy: 390µJ (on), 120µJ (off)
  • Input Type: Standard
  • Gate Charge: 95nC
  • Td (on/off) @ 25°C: 22ns/165ns
  • Test Condition: 400V, 20A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): 62ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고7,200
650V
74A
120A
2.1V @ 15V, 40A
255W
390µJ (on), 120µJ (off)
Standard
95nC
22ns/165ns
400V, 20A, 15 Ohm, 15V
62ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IKW20N60H3FKSA1
Infineon Technologies

IGBT 600V 40A 170W TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
  • Power - Max: 170W
  • Switching Energy: 800µJ
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: 17ns/194ns
  • Test Condition: 400V, 20A, 14.6 Ohm, 15V
  • Reverse Recovery Time (trr): 112ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고4,704
600V
40A
80A
2.4V @ 15V, 20A
170W
800µJ
Standard
120nC
17ns/194ns
400V, 20A, 14.6 Ohm, 15V
112ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
hot IRGB30B60KPBF
Infineon Technologies

IGBT 600V 78A 370W TO220AB

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 78A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A
  • Power - Max: 370W
  • Switching Energy: 350µJ (on), 825µJ (off)
  • Input Type: Standard
  • Gate Charge: 102nC
  • Td (on/off) @ 25°C: 46ns/185ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고5,488
600V
78A
120A
2.35V @ 15V, 30A
370W
350µJ (on), 825µJ (off)
Standard
102nC
46ns/185ns
400V, 30A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220AB
IRG4IBC30WPBF
Infineon Technologies

IGBT 600V 17A 45W TO220FP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 17A
  • Current - Collector Pulsed (Icm): 92A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
  • Power - Max: 45W
  • Switching Energy: 130µJ (on), 130µJ (off)
  • Input Type: Standard
  • Gate Charge: 51nC
  • Td (on/off) @ 25°C: 25ns/99ns
  • Test Condition: 480V, 12A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220AB Full-Pak
패키지: TO-220-3 Full Pack
재고5,120
600V
17A
92A
2.7V @ 15V, 12A
45W
130µJ (on), 130µJ (off)
Standard
51nC
25ns/99ns
480V, 12A, 23 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220AB Full-Pak
hot IRGPS66160DPBF
Infineon Technologies

IGBT 600V 160A TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 240A
  • Current - Collector Pulsed (Icm): 360A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 120A
  • Power - Max: 750W
  • Switching Energy: 4.47mJ (on), 3.43mJ (off)
  • Input Type: Standard
  • Gate Charge: 220nC
  • Td (on/off) @ 25°C: 80ns/190ns
  • Test Condition: 400V, 120A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): 95ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-274AA
  • Supplier Device Package: SUPER-247 (TO-274AA)
패키지: TO-274AA
재고103,464
600V
240A
360A
1.95V @ 15V, 120A
750W
4.47mJ (on), 3.43mJ (off)
Standard
220nC
80ns/190ns
400V, 120A, 4.7 Ohm, 15V
95ns
-40°C ~ 175°C (TJ)
Through Hole
TO-274AA
SUPER-247 (TO-274AA)
hot IRG4PC50UDPBF
Infineon Technologies

IGBT 600V 55A 200W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 55A
  • Current - Collector Pulsed (Icm): 220A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 27A
  • Power - Max: 200W
  • Switching Energy: 990µJ (on), 590µJ (off)
  • Input Type: Standard
  • Gate Charge: 180nC
  • Td (on/off) @ 25°C: 46ns/140ns
  • Test Condition: 480V, 27A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 50ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고89,736
600V
55A
220A
2V @ 15V, 27A
200W
990µJ (on), 590µJ (off)
Standard
180nC
46ns/140ns
480V, 27A, 5 Ohm, 15V
50ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
IGW75N60H3
Infineon Technologies

IGBT 600V 140A 428W TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 140A
  • Current - Collector Pulsed (Icm): 225A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
  • Power - Max: 428W
  • Switching Energy: 3mJ (on), 1.7mJ (off)
  • Input Type: Standard
  • Gate Charge: 470nC
  • Td (on/off) @ 25°C: 31ns/265ns
  • Test Condition: 400V, 75A, 5.2 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고6,112
600V
140A
225A
2.3V @ 15V, 75A
428W
3mJ (on), 1.7mJ (off)
Standard
470nC
31ns/265ns
400V, 75A, 5.2 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
hot IHW40N60R
Infineon Technologies

IGBT 600V 80A 305W TO247-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 40A
  • Power - Max: 305W
  • Switching Energy: 750µJ (off)
  • Input Type: Standard
  • Gate Charge: 223nC
  • Td (on/off) @ 25°C: -/193ns
  • Test Condition: 400V, 40A, 5.6 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고116,892
600V
80A
120A
2.05V @ 15V, 40A
305W
750µJ (off)
Standard
223nC
-/193ns
400V, 40A, 5.6 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IGP40N65H5XKSA1
Infineon Technologies

IGBT 650V 74A 255W PG-TO247-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 74A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 255W
  • Switching Energy: 390µJ (on), 120µJ (off)
  • Input Type: Standard
  • Gate Charge: 95nC
  • Td (on/off) @ 25°C: 22ns/165ns
  • Test Condition: 400V, 20A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
패키지: TO-220-3
재고6,336
650V
74A
120A
2.1V @ 15V, 40A
255W
390µJ (on), 120µJ (off)
Standard
95nC
22ns/165ns
400V, 20A, 15 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
IGB30N60H3ATMA1
Infineon Technologies

IGBT 600V 60A 187W TO263-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
  • Power - Max: 187W
  • Switching Energy: 1.17mJ
  • Input Type: Standard
  • Gate Charge: 165nC
  • Td (on/off) @ 25°C: 18ns/207ns
  • Test Condition: 400V, 30A, 10.5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고5,600
600V
60A
120A
2.4V @ 15V, 30A
187W
1.17mJ
Standard
165nC
18ns/207ns
400V, 30A, 10.5 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3
hot IRGIB6B60KDPBF
Infineon Technologies

IGBT 600V 11A 38W TO220FP

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 11A
  • Current - Collector Pulsed (Icm): 22A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
  • Power - Max: 38W
  • Switching Energy: 110µJ (on), 135µJ (off)
  • Input Type: Standard
  • Gate Charge: 18.2nC
  • Td (on/off) @ 25°C: 25ns/215ns
  • Test Condition: 400V, 5A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 70ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220AB Full-Pak
패키지: TO-220-3 Full Pack
재고150,864
600V
11A
22A
2.2V @ 15V, 5A
38W
110µJ (on), 135µJ (off)
Standard
18.2nC
25ns/215ns
400V, 5A, 100 Ohm, 15V
70ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220AB Full-Pak
hot IRGS8B60KTRLPBF
Infineon Technologies

IGBT 600V 28A 167W D2PAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 28A
  • Current - Collector Pulsed (Icm): 34A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A
  • Power - Max: 167W
  • Switching Energy: 160µJ (on), 160µJ (off)
  • Input Type: Standard
  • Gate Charge: 29nC
  • Td (on/off) @ 25°C: 23ns/140ns
  • Test Condition: 400V, 8A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고192,000
600V
28A
34A
2.2V @ 15V, 8A
167W
160µJ (on), 160µJ (off)
Standard
29nC
23ns/140ns
400V, 8A, 50 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IKP08N65F5XKSA1
Infineon Technologies

IGBT 650V 18A 70W PG-TO220-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 18A
  • Current - Collector Pulsed (Icm): 24A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
  • Power - Max: 70W
  • Switching Energy: 70µJ (on), 20µJ (off)
  • Input Type: Standard
  • Gate Charge: 22nC
  • Td (on/off) @ 25°C: 10ns/116ns
  • Test Condition: 400V, 4A, 48 Ohm, 15V
  • Reverse Recovery Time (trr): 41ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
패키지: TO-220-3
재고8,460
650V
18A
24A
2.1V @ 15V, 8A
70W
70µJ (on), 20µJ (off)
Standard
22nC
10ns/116ns
400V, 4A, 48 Ohm, 15V
41ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot IRGPS46160DPBF
Infineon Technologies

IGBT 600V 240A 750W SUPER247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 240A
  • Current - Collector Pulsed (Icm): 360A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 120A
  • Power - Max: 750W
  • Switching Energy: 5.75mJ (on), 3.43mJ (off)
  • Input Type: Standard
  • Gate Charge: 240nC
  • Td (on/off) @ 25°C: 80ns/190ns
  • Test Condition: 400V, 120A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): 130ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: SUPER-247 (TO-274AA)
패키지: TO-247-3
재고103,464
600V
240A
360A
2.05V @ 15V, 120A
750W
5.75mJ (on), 3.43mJ (off)
Standard
240nC
80ns/190ns
400V, 120A, 4.7 Ohm, 15V
130ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
SUPER-247 (TO-274AA)
AUIRGP50B60PD1
Infineon Technologies

IGBT 600V 75A 390W TO247AC

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 50A
  • Power - Max: 390W
  • Switching Energy: 255µJ (on), 375µJ (off)
  • Input Type: Standard
  • Gate Charge: 205nC
  • Td (on/off) @ 25°C: 30ns/130ns
  • Test Condition: 390V, 33A, 3.3 Ohm, 15V
  • Reverse Recovery Time (trr): 42ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고4,528
600V
75A
150A
2.85V @ 15V, 50A
390W
255µJ (on), 375µJ (off)
Standard
205nC
30ns/130ns
390V, 33A, 3.3 Ohm, 15V
42ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
hot IRGP4660D-EPBF
Infineon Technologies

IGBT 600V 100A 330W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 144A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 48A
  • Power - Max: 330W
  • Switching Energy: 625µJ (on), 1.28mJ (off)
  • Input Type: Standard
  • Gate Charge: 140nC
  • Td (on/off) @ 25°C: 60ns/145ns
  • Test Condition: 400V, 48A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 115ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
패키지: TO-247-3
재고23,268
600V
100A
144A
1.9V @ 15V, 48A
330W
625µJ (on), 1.28mJ (off)
Standard
140nC
60ns/145ns
400V, 48A, 10 Ohm, 15V
115ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AD
IRGP4750DPBF
Infineon Technologies

IGBT 650V TO-247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 105A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
  • Power - Max: 273W
  • Switching Energy: 1.3mJ (on), 500µJ (off)
  • Input Type: Standard
  • Gate Charge: 105nC
  • Td (on/off) @ 25°C: 50ns/105ns
  • Test Condition: 400V, 35A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 150ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고7,072
650V
70A
105A
2V @ 15V, 35A
273W
1.3mJ (on), 500µJ (off)
Standard
105nC
50ns/105ns
400V, 35A, 10 Ohm, 15V
150ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AC
hot IRGP4650DPBF
Infineon Technologies

IGBT 600V 76A 268W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 76A
  • Current - Collector Pulsed (Icm): 105A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 35A
  • Power - Max: 268W
  • Switching Energy: 390µJ (on), 632µJ (off)
  • Input Type: Standard
  • Gate Charge: 104nC
  • Td (on/off) @ 25°C: 46ns/105ns
  • Test Condition: 400V, 35A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 120ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고6,480
600V
76A
105A
1.9V @ 15V, 35A
268W
390µJ (on), 632µJ (off)
Standard
104nC
46ns/105ns
400V, 35A, 10 Ohm, 15V
120ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AC
IKW50N60DTPXKSA1
Infineon Technologies

IGBT 600V 80A 319.2W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
  • Power - Max: 319.2W
  • Switching Energy: 1.53mJ (on), 850µJ (off)
  • Input Type: Standard
  • Gate Charge: 249nC
  • Td (on/off) @ 25°C: 20ns/215ns
  • Test Condition: 400V, 50A, 7 Ohm, 15V
  • Reverse Recovery Time (trr): 115ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고4,304
600V
80A
150A
1.8V @ 15V, 50A
319.2W
1.53mJ (on), 850µJ (off)
Standard
249nC
20ns/215ns
400V, 50A, 7 Ohm, 15V
115ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IGP30N60H3XKSA1
Infineon Technologies

IGBT 600V 60A 187W TO220-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
  • Power - Max: 187W
  • Switching Energy: 1.17mJ
  • Input Type: Standard
  • Gate Charge: 165nC
  • Td (on/off) @ 25°C: 18ns/207ns
  • Test Condition: 400V, 30A, 10.5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
패키지: TO-220-3
재고13,320
600V
60A
120A
2.4V @ 15V, 30A
187W
1.17mJ
Standard
165nC
18ns/207ns
400V, 30A, 10.5 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
PG-TO220-3
IKP30N65H5XKSA1
Infineon Technologies

IGBT 650V TO220-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 55A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
  • Power - Max: 188W
  • Switching Energy: 280µJ (on), 100µJ (off)
  • Input Type: Standard
  • Gate Charge: 70nC
  • Td (on/off) @ 25°C: 19ns/177ns
  • Test Condition: 400V, 15A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 51ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO-220-3
패키지: TO-220-3
재고16,056
650V
55A
90A
2.1V @ 15V, 30A
188W
280µJ (on), 100µJ (off)
Standard
70nC
19ns/177ns
400V, 15A, 23 Ohm, 15V
51ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
PG-TO-220-3
IKP20N65H5XKSA1
Infineon Technologies

IGBT 650V TO220-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 42A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
  • Power - Max: 125W
  • Switching Energy: 170µJ (on), 60µJ (off)
  • Input Type: Standard
  • Gate Charge: 48nC
  • Td (on/off) @ 25°C: 18ns/156ns
  • Test Condition: 400V, 10A, 32 Ohm, 15V
  • Reverse Recovery Time (trr): 52ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO-220-3
패키지: TO-220-3
재고8,220
650V
42A
60A
2.1V @ 15V, 20A
125W
170µJ (on), 60µJ (off)
Standard
48nC
18ns/156ns
400V, 10A, 32 Ohm, 15V
52ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
PG-TO-220-3
IGP30N65H5XKSA1
Infineon Technologies

IGBT 650V TO220-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 55A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
  • Power - Max: 188W
  • Switching Energy: 280µJ (on), 100µJ (off)
  • Input Type: Standard
  • Gate Charge: 70nC
  • Td (on/off) @ 25°C: 19ns/177ns
  • Test Condition: 400V, 15A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO-220-3
패키지: TO-220-3
재고9,264
650V
55A
90A
2.1V @ 15V, 30A
188W
280µJ (on), 100µJ (off)
Standard
70nC
19ns/177ns
400V, 15A, 23 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
PG-TO-220-3