페이지 28 - Infineon Technologies 제품 - 트랜지스터 - IGBT - 단일 | Heisener Electronics
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Infineon Technologies 제품 - 트랜지스터 - IGBT - 단일

기록 1,429
페이지  28/52
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG4BC10SD-SPBF
Infineon Technologies

IGBT 600V 14A 38W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 14A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
  • Power - Max: 38W
  • Switching Energy: 310µJ (on), 3.28mJ (off)
  • Input Type: Standard
  • Gate Charge: 15nC
  • Td (on/off) @ 25°C: 76ns/815ns
  • Test Condition: 480V, 8A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 28ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고5,216
600V
14A
18A
1.8V @ 15V, 8A
38W
310µJ (on), 3.28mJ (off)
Standard
15nC
76ns/815ns
480V, 8A, 100 Ohm, 15V
28ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IGP30N65F5XKSA1
Infineon Technologies

IGBT 650V TO220-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 55A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
  • Power - Max: 188W
  • Switching Energy: 280µJ (on), 70µJ (off)
  • Input Type: Standard
  • Gate Charge: 65nC
  • Td (on/off) @ 25°C: 19ns/170ns
  • Test Condition: 400V, 15A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO-220-3
패키지: TO-220-3
재고4,864
650V
55A
90A
2.1V @ 15V, 30A
188W
280µJ (on), 70µJ (off)
Standard
65nC
19ns/170ns
400V, 15A, 23 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
PG-TO-220-3
hot IRGS6B60KDPBF
Infineon Technologies

IGBT 600V 13A 90W D2PAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 13A
  • Current - Collector Pulsed (Icm): 26A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
  • Power - Max: 90W
  • Switching Energy: 110µJ (on), 135µJ (off)
  • Input Type: Standard
  • Gate Charge: 18.2nC
  • Td (on/off) @ 25°C: 25ns/215ns
  • Test Condition: 400V, 5A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 70ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고7,212
600V
13A
26A
2.2V @ 15V, 5A
90W
110µJ (on), 135µJ (off)
Standard
18.2nC
25ns/215ns
400V, 5A, 100 Ohm, 15V
70ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IRGSL6B60KDPBF
Infineon Technologies

IGBT 600V 13A 90W TO262

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 13A
  • Current - Collector Pulsed (Icm): 26A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
  • Power - Max: 90W
  • Switching Energy: 110µJ (on), 135µJ (off)
  • Input Type: Standard
  • Gate Charge: 18.2nC
  • Td (on/off) @ 25°C: 25ns/215ns
  • Test Condition: 400V, 5A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 70ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Supplier Device Package: TO-262
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA
재고3,648
600V
13A
26A
2.2V @ 15V, 5A
90W
110µJ (on), 135µJ (off)
Standard
18.2nC
25ns/215ns
400V, 5A, 100 Ohm, 15V
70ns
-55°C ~ 150°C (TJ)
Through Hole
TO-262-3 Long Leads, I2Pak, TO-262AA
TO-262
IRG4BC15UD-LPBF
Infineon Technologies

IGBT 600V 14A 49W TO262

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 14A
  • Current - Collector Pulsed (Icm): 42A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 7.8A
  • Power - Max: 49W
  • Switching Energy: 240µJ (on), 260µJ (off)
  • Input Type: Standard
  • Gate Charge: 23nC
  • Td (on/off) @ 25°C: 17ns/160ns
  • Test Condition: 480V, 7.8A, 75 Ohm, 15V
  • Reverse Recovery Time (trr): 28ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Supplier Device Package: TO-262
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA
재고3,200
600V
14A
42A
2.4V @ 15V, 7.8A
49W
240µJ (on), 260µJ (off)
Standard
23nC
17ns/160ns
480V, 7.8A, 75 Ohm, 15V
28ns
-55°C ~ 150°C (TJ)
Through Hole
TO-262-3 Long Leads, I2Pak, TO-262AA
TO-262
IGB50N65S5ATMA1
Infineon Technologies

IGBT PRODUCTS

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,808
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IGB50N65H5ATMA1
Infineon Technologies

IGBT PRODUCTS

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,632
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IGB30N60TATMA1
Infineon Technologies

IGBT 600V 60A 187W TO263-3-2

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
  • Power - Max: 187W
  • Switching Energy: 1.46mJ
  • Input Type: Standard
  • Gate Charge: 167nC
  • Td (on/off) @ 25°C: 23ns/254ns
  • Test Condition: 400V, 30A, 10.6 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3-2
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고3,552
600V
60A
90A
2.05V @ 15V, 30A
187W
1.46mJ
Standard
167nC
23ns/254ns
400V, 30A, 10.6 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3-2
IRG4PC30UPBF
Infineon Technologies

IGBT 600V 23A 100W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 23A
  • Current - Collector Pulsed (Icm): 92A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
  • Power - Max: 100W
  • Switching Energy: 160µJ (on), 200µJ (off)
  • Input Type: Standard
  • Gate Charge: 50nC
  • Td (on/off) @ 25°C: 17ns/78ns
  • Test Condition: 480V, 12A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고3,488
600V
23A
92A
2.1V @ 15V, 12A
100W
160µJ (on), 200µJ (off)
Standard
50nC
17ns/78ns
480V, 12A, 23 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
hot IKP20N60H3
Infineon Technologies

IGBT 600V 40A 170W TO220-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
  • Power - Max: 170W
  • Switching Energy: 690µJ
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: 16ns/194ns
  • Test Condition: 400V, 20A, 14.6 Ohm, 15V
  • Reverse Recovery Time (trr): 112ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO-220-3
패키지: TO-220-3
재고103,464
600V
40A
80A
2.4V @ 15V, 20A
170W
690µJ
Standard
120nC
16ns/194ns
400V, 20A, 14.6 Ohm, 15V
112ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
PG-TO-220-3
IKB20N60H3ATMA1
Infineon Technologies

IGBT 600V 40A 170W TO263-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
  • Power - Max: 170W
  • Switching Energy: 690µJ
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: 16ns/194ns
  • Test Condition: 400V, 20A, 14.6 Ohm, 15V
  • Reverse Recovery Time (trr): 112ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고3,312
600V
40A
80A
2.4V @ 15V, 20A
170W
690µJ
Standard
120nC
16ns/194ns
400V, 20A, 14.6 Ohm, 15V
112ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3
IGP20N60H3XKSA1
Infineon Technologies

IGBT 600V 40A 170W TO220-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
  • Power - Max: 170W
  • Switching Energy: 690µJ
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: 16ns/194ns
  • Test Condition: 400V, 20A, 14.6 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
패키지: TO-220-3
재고3,040
600V
40A
80A
2.4V @ 15V, 20A
170W
690µJ
Standard
120nC
16ns/194ns
400V, 20A, 14.6 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
PG-TO220-3
IRGSL4B60KD1PBF
Infineon Technologies

IGBT 600V 11A 63W TO262

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 11A
  • Current - Collector Pulsed (Icm): 22A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
  • Power - Max: 63W
  • Switching Energy: 73µJ (on), 47µJ (off)
  • Input Type: Standard
  • Gate Charge: 12nC
  • Td (on/off) @ 25°C: 22ns/100ns
  • Test Condition: 400V, 4A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 93ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Supplier Device Package: TO-262
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA
재고7,552
600V
11A
22A
2.5V @ 15V, 4A
63W
73µJ (on), 47µJ (off)
Standard
12nC
22ns/100ns
400V, 4A, 100 Ohm, 15V
93ns
-55°C ~ 175°C (TJ)
Through Hole
TO-262-3 Long Leads, I2Pak, TO-262AA
TO-262
IRGS6B60KDTRRP
Infineon Technologies

IGBT 600V 13A 90W D2PAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 13A
  • Current - Collector Pulsed (Icm): 26A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
  • Power - Max: 90W
  • Switching Energy: 110µJ (on), 135µJ (off)
  • Input Type: Standard
  • Gate Charge: 18.2nC
  • Td (on/off) @ 25°C: 25ns/215ns
  • Test Condition: 400V, 5A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 70ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고7,360
600V
13A
26A
2.2V @ 15V, 5A
90W
110µJ (on), 135µJ (off)
Standard
18.2nC
25ns/215ns
400V, 5A, 100 Ohm, 15V
70ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IRGS6B60KDTRLP
Infineon Technologies

IGBT 600V 13A 90W D2PAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 13A
  • Current - Collector Pulsed (Icm): 26A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
  • Power - Max: 90W
  • Switching Energy: 110µJ (on), 135µJ (off)
  • Input Type: Standard
  • Gate Charge: 18.2nC
  • Td (on/off) @ 25°C: 25ns/215ns
  • Test Condition: 400V, 5A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 70ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고2,752
600V
13A
26A
2.2V @ 15V, 5A
90W
110µJ (on), 135µJ (off)
Standard
18.2nC
25ns/215ns
400V, 5A, 100 Ohm, 15V
70ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IRGC4060B
Infineon Technologies

IGBT CHIP WAFER

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 8A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: Die
재고4,352
600V
8A
-
-
-
-
Standard
-
-
-
-
175°C (TJ)
Surface Mount
Die
Die
IRGC4056B
Infineon Technologies

IGBT CHIP WAFER

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 8A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: Die
재고5,120
600V
8A
-
-
-
-
Standard
-
-
-
-
175°C (TJ)
Surface Mount
Die
Die
hot IRG4RC10SDPBF
Infineon Technologies

IGBT 600V 14A 38W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 14A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
  • Power - Max: 38W
  • Switching Energy: 310µJ (on), 3.28mJ (off)
  • Input Type: Standard
  • Gate Charge: 15nC
  • Td (on/off) @ 25°C: 76ns/815ns
  • Test Condition: 480V, 8A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 28ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고126,600
600V
14A
18A
1.8V @ 15V, 8A
38W
310µJ (on), 3.28mJ (off)
Standard
15nC
76ns/815ns
480V, 8A, 100 Ohm, 15V
28ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
SKP02N120XKSA1
Infineon Technologies

IGBT 1200V 6.2A 62W TO220-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 6.2A
  • Current - Collector Pulsed (Icm): 9.6A
  • Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 2A
  • Power - Max: 62W
  • Switching Energy: 220µJ
  • Input Type: Standard
  • Gate Charge: 11nC
  • Td (on/off) @ 25°C: 23ns/260ns
  • Test Condition: 800V, 2A, 91 Ohm, 15V
  • Reverse Recovery Time (trr): 50ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
패키지: TO-220-3
재고2,016
1200V
6.2A
9.6A
3.6V @ 15V, 2A
62W
220µJ
Standard
11nC
23ns/260ns
800V, 2A, 91 Ohm, 15V
50ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
PG-TO220-3
IRGS8B60KPBF
Infineon Technologies

IGBT 600V 28A 167W D2PAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 28A
  • Current - Collector Pulsed (Icm): 34A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A
  • Power - Max: 167W
  • Switching Energy: 160µJ (on), 160µJ (off)
  • Input Type: Standard
  • Gate Charge: 29nC
  • Td (on/off) @ 25°C: 23ns/140ns
  • Test Condition: 400V, 8A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고3,888
600V
28A
34A
2.2V @ 15V, 8A
167W
160µJ (on), 160µJ (off)
Standard
29nC
23ns/140ns
400V, 8A, 50 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IGA03N120H2XKSA1
Infineon Technologies

IGBT 1200V 3A 29W TO220-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 3A
  • Current - Collector Pulsed (Icm): 9A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
  • Power - Max: 29W
  • Switching Energy: 290µJ
  • Input Type: Standard
  • Gate Charge: 8.6nC
  • Td (on/off) @ 25°C: 9.2ns/281ns
  • Test Condition: 800V, 3A, 82 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: PG-TO220-3
패키지: TO-220-3 Full Pack
재고3,440
1200V
3A
9A
2.8V @ 15V, 3A
29W
290µJ
Standard
8.6nC
9.2ns/281ns
800V, 3A, 82 Ohm, 15V
-
-40°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
PG-TO220-3
IRG7CH30K10EF
Infineon Technologies

IGBT CHIP WAFER

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 10A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.56V @ 15V, 10A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 4.8nC
  • Td (on/off) @ 25°C: 10ns/90ns
  • Test Condition: 600V, 10A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: Die
재고2,288
1200V
10A
-
2.56V @ 15V, 10A
-
-
Standard
4.8nC
10ns/90ns
600V, 10A, 22 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IRG4RC10UDPBF
Infineon Technologies

IGBT 600V 8.5A 38W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 8.5A
  • Current - Collector Pulsed (Icm): 34A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
  • Power - Max: 38W
  • Switching Energy: 140µJ (on), 120µJ (off)
  • Input Type: Standard
  • Gate Charge: 15nC
  • Td (on/off) @ 25°C: 40ns/87ns
  • Test Condition: 480V, 5A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 28ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고7,616
600V
8.5A
34A
2.6V @ 15V, 5A
38W
140µJ (on), 120µJ (off)
Standard
15nC
40ns/87ns
480V, 5A, 100 Ohm, 15V
28ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
hot AUIRGR4045DTRL
Infineon Technologies

IGBT 600V 12A 77W DPAK

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 12A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
  • Power - Max: 77W
  • Switching Energy: 56µJ (on), 122µJ (off)
  • Input Type: Standard
  • Gate Charge: 19.5nC
  • Td (on/off) @ 25°C: 27ns/75ns
  • Test Condition: 400V, 6A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 74ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고36,480
600V
12A
18A
2V @ 15V, 6A
77W
56µJ (on), 122µJ (off)
Standard
19.5nC
27ns/75ns
400V, 6A, 47 Ohm, 15V
74ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
IRGS6B60KPBF
Infineon Technologies

IGBT 600V 13A 90W D2PAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 13A
  • Current - Collector Pulsed (Icm): 26A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
  • Power - Max: 90W
  • Switching Energy: 110µJ (on), 135µJ (off)
  • Input Type: Standard
  • Gate Charge: 18.2nC
  • Td (on/off) @ 25°C: 25ns/215ns
  • Test Condition: 400V, 5A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고5,488
600V
13A
26A
2.2V @ 15V, 5A
90W
110µJ (on), 135µJ (off)
Standard
18.2nC
25ns/215ns
400V, 5A, 100 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
SKB02N120ATMA1
Infineon Technologies

IGBT 1200V 6.2A 62W TO263-3-2

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 6.2A
  • Current - Collector Pulsed (Icm): 9.6A
  • Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 2A
  • Power - Max: 62W
  • Switching Energy: 220µJ
  • Input Type: Standard
  • Gate Charge: 11nC
  • Td (on/off) @ 25°C: 23ns/260ns
  • Test Condition: 800V, 2A, 91 Ohm, 15V
  • Reverse Recovery Time (trr): 50ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3-2
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고3,968
1200V
6.2A
9.6A
3.6V @ 15V, 2A
62W
220µJ
Standard
11nC
23ns/260ns
800V, 2A, 91 Ohm, 15V
50ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3-2
IKD15N60RAATMA1
Infineon Technologies

IGBT 600V 30A 250W TO252-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
  • Power - Max: 250W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 90nC
  • Td (on/off) @ 25°C: 16ns/183ns
  • Test Condition: 400V, 15A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): 110ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고6,112
600V
30A
45A
2.1V @ 15V, 15A
250W
-
Standard
90nC
16ns/183ns
400V, 15A, 15 Ohm, 15V
110ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
hot IRGS4B60KD1PBF
Infineon Technologies

IGBT 600V 11A 63W D2PAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 11A
  • Current - Collector Pulsed (Icm): 22A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
  • Power - Max: 63W
  • Switching Energy: 73µJ (on), 47µJ (off)
  • Input Type: Standard
  • Gate Charge: 12nC
  • Td (on/off) @ 25°C: 22ns/100ns
  • Test Condition: 400V, 4A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 93ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고24,816
600V
11A
22A
2.5V @ 15V, 4A
63W
73µJ (on), 47µJ (off)
Standard
12nC
22ns/100ns
400V, 4A, 100 Ohm, 15V
93ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK