페이지 32 - Infineon Technologies 제품 - 트랜지스터 - IGBT - 단일

IKW40N65F5AXKSA1

Infineon Technologies

IGBT 650V 74A 255W PG-TO247-3

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 74A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Power - Max: 250W
Switching Energy: 350µJ (on), 100µJ (off)
Input Type: Standard
Gate Charge: 95nC
Td (on/off) @ 25°C: 19ns/165ns
Test Condition: 400V, 20A, 15 Ohm, 15V
Reverse Recovery Time (trr): 73ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

패키지: TO-247-3

재고2,384

650V

74A

120A

2.1V @ 15V, 40A

250W

350µJ (on), 100µJ (off)

Standard

95nC

19ns/165ns

400V, 20A, 15 Ohm, 15V

73ns

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3

AIGW50N65H5XKSA1

Infineon Technologies

IGBT 650V TO247-3

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,048

-

AIGW50N65F5XKSA1

Infineon Technologies

IGBT 650V TO247-3

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,688

-

IGW50N65H5AXKSA1

Infineon Technologies

IGBT 650V TO247-3

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Power - Max: 270W
Switching Energy: 450µJ (on), 160µJ (off)
Input Type: Standard
Gate Charge: 116nC
Td (on/off) @ 25°C: 21ns/173ns
Test Condition: 400V, 25A, 12 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

패키지: TO-247-3

재고2,384

650V

80A

150A

2.1V @ 15V, 50A

270W

450µJ (on), 160µJ (off)

Standard

116nC

21ns/173ns

400V, 25A, 12 Ohm, 15V

-

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3

IGW50N65F5AXKSA1

Infineon Technologies

IGBT 650V TO247-3

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Power - Max: 270W
Switching Energy: 490µJ (on), 140µJ (off)
Input Type: Standard
Gate Charge: 108nC
Td (on/off) @ 25°C: 21ns/156ns
Test Condition: 400V, 25A, 12 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

패키지: TO-247-3

재고6,464

650V

80A

150A

2.1V @ 15V, 50A

270W

490µJ (on), 140µJ (off)

Standard

108nC

21ns/156ns

400V, 25A, 12 Ohm, 15V

-

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3

AUIRGP4062D1-E

Infineon Technologies

IGBT 600V 55A 217W TO247AD

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 55A
Current - Collector Pulsed (Icm): 72A
Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 24A
Power - Max: 217W
Switching Energy: 532µJ (on), 311µJ (off)
Input Type: Standard
Gate Charge: 77nC
Td (on/off) @ 25°C: 19ns/90ns
Test Condition: 400V, 24A, 10 Ohm, 15V
Reverse Recovery Time (trr): 102ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD

패키지: TO-247-3

재고4,688

600V

55A

72A

1.77V @ 15V, 24A

217W

532µJ (on), 311µJ (off)

Standard

77nC

19ns/90ns

400V, 24A, 10 Ohm, 15V

102ns

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

TO-247AD

AUIRGP4062D1

Infineon Technologies

IGBT 600V 55A 217W TO247AC

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 55A
Current - Collector Pulsed (Icm): 72A
Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 24A
Power - Max: 217W
Switching Energy: 532µJ (on), 311µJ (off)
Input Type: Standard
Gate Charge: 77nC
Td (on/off) @ 25°C: 19ns/90ns
Test Condition: 400V, 24A, 10 Ohm, 15V
Reverse Recovery Time (trr): 102ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC

패키지: TO-247-3

재고6,464

600V

55A

72A

1.77V @ 15V, 24A

217W

532µJ (on), 311µJ (off)

Standard

77nC

19ns/90ns

400V, 24A, 10 Ohm, 15V

102ns

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

TO-247AC

IRGP4063PBF

Infineon Technologies

IGBT 600V 96A 330W TO247AC

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 96A
Current - Collector Pulsed (Icm): 144A
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
Power - Max: 330W
Switching Energy: 625µJ (on), 1.28mJ (off)
Input Type: Standard
Gate Charge: 95nC
Td (on/off) @ 25°C: 60ns/145ns
Test Condition: 400V, 48A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC

패키지: TO-247-3

재고105,144

600V

96A

144A

2.14V @ 15V, 48A

330W

625µJ (on), 1.28mJ (off)

Standard

95nC

60ns/145ns

400V, 48A, 10 Ohm, 15V

-

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

TO-247AC

SKW30N60FKSA1

Infineon Technologies

IGBT 600V 41A 250W TO247-3

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 41A
Current - Collector Pulsed (Icm): 112A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Power - Max: 250W
Switching Energy: 1.29mJ
Input Type: Standard
Gate Charge: 140nC
Td (on/off) @ 25°C: 44ns/291ns
Test Condition: 400V, 30A, 11 Ohm, 15V
Reverse Recovery Time (trr): 400ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

패키지: TO-247-3

재고6,464

600V

41A

112A

2.4V @ 15V, 30A

250W

1.29mJ

Standard

140nC

44ns/291ns

400V, 30A, 11 Ohm, 15V

400ns

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

PG-TO247-3

AUIRGF76524D0

Infineon Technologies

DIODE IGBT 680V 24A TO-247AD

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,864

-

AIKW40N65DH5XKSA1

Infineon Technologies

IC DISCRETE 650V TO247-3

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,248

-

AIKW40N65DF5XKSA1

Infineon Technologies

IC DISCRETE 650V TO247-3

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,736

-

IRGC4063B

Infineon Technologies

IGBT CHIP WAFER

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 48A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: Die

재고6,080

600V

48A

-

Standard

-

175°C (TJ)

Surface Mount

Die

IRGP50B60PD1-EP

Infineon Technologies

IGBT 600V 75A 390W TO247AD

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 50A
Power - Max: 390W
Switching Energy: 255µJ (on), 375µJ (off)
Input Type: Standard
Gate Charge: 205nC
Td (on/off) @ 25°C: 30ns/130ns
Test Condition: 390V, 33A, 3.3 Ohm, 15V
Reverse Recovery Time (trr): 42ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Supplier Device Package: TO-247AD

패키지: TO-3P-3 Full Pack

재고2,416

600V

75A

150A

2.85V @ 15V, 50A

390W

255µJ (on), 375µJ (off)

Standard

205nC

30ns/130ns

390V, 33A, 3.3 Ohm, 15V

42ns

-55°C ~ 150°C (TJ)

Through Hole

TO-3P-3 Full Pack

TO-247AD

AIGW40N65H5XKSA1

Infineon Technologies

IGBT 650V TO247-3

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,304

-

AIGW40N65F5XKSA1

Infineon Technologies

IGBT 650V TO247-3

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,752

-

IGW40N65H5AXKSA1

Infineon Technologies

IGBT 650V TO247-3

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 74A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Power - Max: 250W
Switching Energy: 360µJ (on), 110µJ (off)
Input Type: Standard
Gate Charge: 92nC
Td (on/off) @ 25°C: 20ns/149ns
Test Condition: 400V, 20A, 15 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

패키지: TO-247-3

재고3,856

650V

74A

120A

2.1V @ 15V, 40A

250W

360µJ (on), 110µJ (off)

Standard

92nC

20ns/149ns

400V, 20A, 15 Ohm, 15V

-

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3

IGW40N65F5AXKSA1

Infineon Technologies

IGBT 650V TO247-3

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 74A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Power - Max: 250W
Switching Energy: 350µJ (on), 100µJ (off)
Input Type: Standard
Gate Charge: 95nC
Td (on/off) @ 25°C: 19ns/165ns
Test Condition: 400V, 20A, 15 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

패키지: TO-247-3

재고4,048

650V

74A

120A

2.1V @ 15V, 40A

250W

350µJ (on), 100µJ (off)

Standard

95nC

19ns/165ns

400V, 20A, 15 Ohm, 15V

-

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3

AUIRGP76524D0

Infineon Technologies

DIODE IGBT 680V 24A TO-247AC

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,056

-

IRG4PH40UD-EPBF

Infineon Technologies

IGBT 1200V 41A 160W TO247-3

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 41A
Current - Collector Pulsed (Icm): 82A
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 21A
Power - Max: 160W
Switching Energy: 1.8mJ (on), 1.93mJ (off)
Input Type: Standard
Gate Charge: 86nC
Td (on/off) @ 25°C: 46ns/97ns
Test Condition: 800V, 21A, 10 Ohm, 15V
Reverse Recovery Time (trr): 63ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC

패키지: TO-247-3

재고6,176

1200V

41A

82A

3.1V @ 15V, 21A

160W

1.8mJ (on), 1.93mJ (off)

Standard

86nC

46ns/97ns

800V, 21A, 10 Ohm, 15V

63ns

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247AC

IRG4PC50KPBF

Infineon Technologies

IGBT 600V 52A 200W TO247AC

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 52A
Current - Collector Pulsed (Icm): 104A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Power - Max: 200W
Switching Energy: 490µJ (on), 680µJ (off)
Input Type: Standard
Gate Charge: 200nC
Td (on/off) @ 25°C: 38ns/160ns
Test Condition: 480V, 30A, 5 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC

패키지: TO-247-3

재고6,704

600V

52A

104A

2.2V @ 15V, 30A

200W

490µJ (on), 680µJ (off)

Standard

200nC

38ns/160ns

480V, 30A, 5 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247AC

AUIRGS4062D1TRL

Infineon Technologies

IGBT 600V 59A 246W D2PAK

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 59A
Current - Collector Pulsed (Icm): 72A
Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 24A
Power - Max: 246W
Switching Energy: 532µJ (on), 311µJ (off)
Input Type: Standard
Gate Charge: 77nC
Td (on/off) @ 25°C: 19ns/90ns
Test Condition: 400V, 24A, 10 Ohm, 15V
Reverse Recovery Time (trr): 102ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고4,512

600V

59A

72A

1.77V @ 15V, 24A

246W

532µJ (on), 311µJ (off)

Standard

77nC

19ns/90ns

400V, 24A, 10 Ohm, 15V

102ns

-55°C ~ 175°C (TJ)

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

AUIRGSL4062D1

Infineon Technologies

IGBT 600V 59A 246W TO-262

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 59A
Current - Collector Pulsed (Icm): 72A
Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 24A
Power - Max: 246W
Switching Energy: 532µJ (on), 311µJ (off)
Input Type: Standard
Gate Charge: 77nC
Td (on/off) @ 25°C: 19ns/90ns
Test Condition: 400V, 24A, 10 Ohm, 15V
Reverse Recovery Time (trr): 102ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package: TO-262

패키지: TO-262-3 Long Leads, I2Pak, TO-262AA

재고5,600

600V

59A

72A

1.77V @ 15V, 24A

246W

532µJ (on), 311µJ (off)

Standard

77nC

19ns/90ns

400V, 24A, 10 Ohm, 15V

102ns

-55°C ~ 175°C (TJ)

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

TO-262

IKW30N60TAFKSA1

Infineon Technologies

IGBT 600V 60A 187W TO247-3-21

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 90A
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Power - Max: 187W
Switching Energy: 1.46mJ
Input Type: Standard
Gate Charge: 167nC
Td (on/off) @ 25°C: 23ns/254ns
Test Condition: 400V, 30A, 10.6 Ohm, 15V
Reverse Recovery Time (trr): 143ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

패키지: TO-247-3

재고3,824

600V

60A

90A

2.05V @ 15V, 30A

187W

1.46mJ

Standard

167nC

23ns/254ns

400V, 30A, 10.6 Ohm, 15V

143ns

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3

IRG4PC60UPBF

Infineon Technologies

IGBT 600V 75A 520W TO247AC

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 300A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Power - Max: 520W
Switching Energy: 280µJ (on), 1.1mJ (off)
Input Type: Standard
Gate Charge: 310nC
Td (on/off) @ 25°C: 39ns/200ns
Test Condition: 480V, 40A, 5 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC

패키지: TO-247-3

재고5,648

600V

75A

300A

2V @ 15V, 40A

520W

280µJ (on), 1.1mJ (off)

Standard

310nC

39ns/200ns

480V, 40A, 5 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247AC

AUIRGDC0250

Infineon Technologies

IGBT 1200V 141A 543W TO-220

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 141A
Current - Collector Pulsed (Icm): 99A
Vce(on) (Max) @ Vge, Ic: 1.57V @ 15V, 33A
Power - Max: 543W
Switching Energy: 15mJ (off)
Input Type: Standard
Gate Charge: 227nC
Td (on/off) @ 25°C: -/485ns
Test Condition: 600V, 33A, 5 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: SUPER-220? (TO-273AA)

패키지: TO-220-3

재고3,904

1200V

141A

99A

1.57V @ 15V, 33A

543W

15mJ (off)

Standard

227nC

-/485ns

600V, 33A, 5 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

SUPER-220? (TO-273AA)

IGW60N60H3FKSA1

Infineon Technologies

IGBT 600V TO247-3

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 180A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Power - Max: 416W
Switching Energy: 2.1mJ (on), 1.13mJ (off)
Input Type: Standard
Gate Charge: 375nC
Td (on/off) @ 25°C: 27ns/252ns
Test Condition: 400V, 60A, 6 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

패키지: TO-247-3

재고4,768

600V

80A

180A

2.3V @ 15V, 60A

416W

2.1mJ (on), 1.13mJ (off)

Standard

375nC

27ns/252ns

400V, 60A, 6 Ohm, 15V

-

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3

IGW50N60T

Infineon Technologies

IGBT 600V 100A 333W TO247-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 100A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Power - Max: 333W
Switching Energy: 2.6mJ
Input Type: Standard
Gate Charge: 310nC
Td (on/off) @ 25°C: 26ns/299ns
Test Condition: 400V, 50A, 7 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

패키지: TO-247-3

재고432,420

600V

100A

150A

2V @ 15V, 50A

333W

2.6mJ

Standard

310nC

26ns/299ns

400V, 50A, 7 Ohm, 15V

-

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IKW40N65F5AXKSA1	Infineon Technologies	IGBT 650V 74A 255W PG-TO247-3 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 74A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Power - Max: 250W Switching Energy: 350µJ (on), 100µJ (off) Input Type: Standard Gate Charge: 95nC Td (on/off) @ 25°C: 19ns/165ns Test Condition: 400V, 20A, 15 Ohm, 15V Reverse Recovery Time (trr): 73ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	패키지: TO-247-3	재고2,384	650V	74A	120A	2.1V @ 15V, 40A	250W	350µJ (on), 100µJ (off)	Standard	95nC	19ns/165ns	400V, 20A, 15 Ohm, 15V	73ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
AIGW50N65H5XKSA1	Infineon Technologies	IGBT 650V TO247-3 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,048	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AIGW50N65F5XKSA1	Infineon Technologies	IGBT 650V TO247-3 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,688	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IGW50N65H5AXKSA1	Infineon Technologies	IGBT 650V TO247-3 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Power - Max: 270W Switching Energy: 450µJ (on), 160µJ (off) Input Type: Standard Gate Charge: 116nC Td (on/off) @ 25°C: 21ns/173ns Test Condition: 400V, 25A, 12 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	패키지: TO-247-3	재고2,384	650V	80A	150A	2.1V @ 15V, 50A	270W	450µJ (on), 160µJ (off)	Standard	116nC	21ns/173ns	400V, 25A, 12 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
IGW50N65F5AXKSA1	Infineon Technologies	IGBT 650V TO247-3 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Power - Max: 270W Switching Energy: 490µJ (on), 140µJ (off) Input Type: Standard Gate Charge: 108nC Td (on/off) @ 25°C: 21ns/156ns Test Condition: 400V, 25A, 12 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	패키지: TO-247-3	재고6,464	650V	80A	150A	2.1V @ 15V, 50A	270W	490µJ (on), 140µJ (off)	Standard	108nC	21ns/156ns	400V, 25A, 12 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
AUIRGP4062D1-E	Infineon Technologies	IGBT 600V 55A 217W TO247AD IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 55A Current - Collector Pulsed (Icm): 72A Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 24A Power - Max: 217W Switching Energy: 532µJ (on), 311µJ (off) Input Type: Standard Gate Charge: 77nC Td (on/off) @ 25°C: 19ns/90ns Test Condition: 400V, 24A, 10 Ohm, 15V Reverse Recovery Time (trr): 102ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	패키지: TO-247-3	재고4,688	600V	55A	72A	1.77V @ 15V, 24A	217W	532µJ (on), 311µJ (off)	Standard	77nC	19ns/90ns	400V, 24A, 10 Ohm, 15V	102ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247AD
AUIRGP4062D1	Infineon Technologies	IGBT 600V 55A 217W TO247AC IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 55A Current - Collector Pulsed (Icm): 72A Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 24A Power - Max: 217W Switching Energy: 532µJ (on), 311µJ (off) Input Type: Standard Gate Charge: 77nC Td (on/off) @ 25°C: 19ns/90ns Test Condition: 400V, 24A, 10 Ohm, 15V Reverse Recovery Time (trr): 102ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	패키지: TO-247-3	재고6,464	600V	55A	72A	1.77V @ 15V, 24A	217W	532µJ (on), 311µJ (off)	Standard	77nC	19ns/90ns	400V, 24A, 10 Ohm, 15V	102ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247AC
IRGP4063PBF	Infineon Technologies	IGBT 600V 96A 330W TO247AC IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 96A Current - Collector Pulsed (Icm): 144A Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A Power - Max: 330W Switching Energy: 625µJ (on), 1.28mJ (off) Input Type: Standard Gate Charge: 95nC Td (on/off) @ 25°C: 60ns/145ns Test Condition: 400V, 48A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	패키지: TO-247-3	재고105,144	600V	96A	144A	2.14V @ 15V, 48A	330W	625µJ (on), 1.28mJ (off)	Standard	95nC	60ns/145ns	400V, 48A, 10 Ohm, 15V	-	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247AC
SKW30N60FKSA1	Infineon Technologies	IGBT 600V 41A 250W TO247-3 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 41A Current - Collector Pulsed (Icm): 112A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A Power - Max: 250W Switching Energy: 1.29mJ Input Type: Standard Gate Charge: 140nC Td (on/off) @ 25°C: 44ns/291ns Test Condition: 400V, 30A, 11 Ohm, 15V Reverse Recovery Time (trr): 400ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	패키지: TO-247-3	재고6,464	600V	41A	112A	2.4V @ 15V, 30A	250W	1.29mJ	Standard	140nC	44ns/291ns	400V, 30A, 11 Ohm, 15V	400ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
AUIRGF76524D0	Infineon Technologies	DIODE IGBT 680V 24A TO-247AD IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,864	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AIKW40N65DH5XKSA1	Infineon Technologies	IC DISCRETE 650V TO247-3 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,248	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AIKW40N65DF5XKSA1	Infineon Technologies	IC DISCRETE 650V TO247-3 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,736	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRGC4063B	Infineon Technologies	IGBT CHIP WAFER IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 48A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: Die	재고6,080	600V	48A	-	-	-	-	Standard	-	-	-	-	175°C (TJ)	Surface Mount	Die	Die
IRGP50B60PD1-EP	Infineon Technologies	IGBT 600V 75A 390W TO247AD IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 50A Power - Max: 390W Switching Energy: 255µJ (on), 375µJ (off) Input Type: Standard Gate Charge: 205nC Td (on/off) @ 25°C: 30ns/130ns Test Condition: 390V, 33A, 3.3 Ohm, 15V Reverse Recovery Time (trr): 42ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Supplier Device Package: TO-247AD	패키지: TO-3P-3 Full Pack	재고2,416	600V	75A	150A	2.85V @ 15V, 50A	390W	255µJ (on), 375µJ (off)	Standard	205nC	30ns/130ns	390V, 33A, 3.3 Ohm, 15V	42ns	-55°C ~ 150°C (TJ)	Through Hole	TO-3P-3 Full Pack	TO-247AD
AIGW40N65H5XKSA1	Infineon Technologies	IGBT 650V TO247-3 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,304	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AIGW40N65F5XKSA1	Infineon Technologies	IGBT 650V TO247-3 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,752	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IGW40N65H5AXKSA1	Infineon Technologies	IGBT 650V TO247-3 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 74A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Power - Max: 250W Switching Energy: 360µJ (on), 110µJ (off) Input Type: Standard Gate Charge: 92nC Td (on/off) @ 25°C: 20ns/149ns Test Condition: 400V, 20A, 15 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	패키지: TO-247-3	재고3,856	650V	74A	120A	2.1V @ 15V, 40A	250W	360µJ (on), 110µJ (off)	Standard	92nC	20ns/149ns	400V, 20A, 15 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
IGW40N65F5AXKSA1	Infineon Technologies	IGBT 650V TO247-3 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 74A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Power - Max: 250W Switching Energy: 350µJ (on), 100µJ (off) Input Type: Standard Gate Charge: 95nC Td (on/off) @ 25°C: 19ns/165ns Test Condition: 400V, 20A, 15 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	패키지: TO-247-3	재고4,048	650V	74A	120A	2.1V @ 15V, 40A	250W	350µJ (on), 100µJ (off)	Standard	95nC	19ns/165ns	400V, 20A, 15 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
AUIRGP76524D0	Infineon Technologies	DIODE IGBT 680V 24A TO-247AC IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,056	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRG4PH40UD-EPBF	Infineon Technologies	IGBT 1200V 41A 160W TO247-3 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 41A Current - Collector Pulsed (Icm): 82A Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 21A Power - Max: 160W Switching Energy: 1.8mJ (on), 1.93mJ (off) Input Type: Standard Gate Charge: 86nC Td (on/off) @ 25°C: 46ns/97ns Test Condition: 800V, 21A, 10 Ohm, 15V Reverse Recovery Time (trr): 63ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	패키지: TO-247-3	재고6,176	1200V	41A	82A	3.1V @ 15V, 21A	160W	1.8mJ (on), 1.93mJ (off)	Standard	86nC	46ns/97ns	800V, 21A, 10 Ohm, 15V	63ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AC
IRG4PC50KPBF	Infineon Technologies	IGBT 600V 52A 200W TO247AC IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 52A Current - Collector Pulsed (Icm): 104A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A Power - Max: 200W Switching Energy: 490µJ (on), 680µJ (off) Input Type: Standard Gate Charge: 200nC Td (on/off) @ 25°C: 38ns/160ns Test Condition: 480V, 30A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	패키지: TO-247-3	재고6,704	600V	52A	104A	2.2V @ 15V, 30A	200W	490µJ (on), 680µJ (off)	Standard	200nC	38ns/160ns	480V, 30A, 5 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AC
AUIRGS4062D1TRL	Infineon Technologies	IGBT 600V 59A 246W D2PAK IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 59A Current - Collector Pulsed (Icm): 72A Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 24A Power - Max: 246W Switching Energy: 532µJ (on), 311µJ (off) Input Type: Standard Gate Charge: 77nC Td (on/off) @ 25°C: 19ns/90ns Test Condition: 400V, 24A, 10 Ohm, 15V Reverse Recovery Time (trr): 102ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고4,512	600V	59A	72A	1.77V @ 15V, 24A	246W	532µJ (on), 311µJ (off)	Standard	77nC	19ns/90ns	400V, 24A, 10 Ohm, 15V	102ns	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK
AUIRGSL4062D1	Infineon Technologies	IGBT 600V 59A 246W TO-262 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 59A Current - Collector Pulsed (Icm): 72A Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 24A Power - Max: 246W Switching Energy: 532µJ (on), 311µJ (off) Input Type: Standard Gate Charge: 77nC Td (on/off) @ 25°C: 19ns/90ns Test Condition: 400V, 24A, 10 Ohm, 15V Reverse Recovery Time (trr): 102ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA Supplier Device Package: TO-262	패키지: TO-262-3 Long Leads, I2Pak, TO-262AA	재고5,600	600V	59A	72A	1.77V @ 15V, 24A	246W	532µJ (on), 311µJ (off)	Standard	77nC	19ns/90ns	400V, 24A, 10 Ohm, 15V	102ns	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I2Pak, TO-262AA	TO-262
IKW30N60TAFKSA1	Infineon Technologies	IGBT 600V 60A 187W TO247-3-21 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A Power - Max: 187W Switching Energy: 1.46mJ Input Type: Standard Gate Charge: 167nC Td (on/off) @ 25°C: 23ns/254ns Test Condition: 400V, 30A, 10.6 Ohm, 15V Reverse Recovery Time (trr): 143ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	패키지: TO-247-3	재고3,824	600V	60A	90A	2.05V @ 15V, 30A	187W	1.46mJ	Standard	167nC	23ns/254ns	400V, 30A, 10.6 Ohm, 15V	143ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
IRG4PC60UPBF	Infineon Technologies	IGBT 600V 75A 520W TO247AC IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 300A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Power - Max: 520W Switching Energy: 280µJ (on), 1.1mJ (off) Input Type: Standard Gate Charge: 310nC Td (on/off) @ 25°C: 39ns/200ns Test Condition: 480V, 40A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	패키지: TO-247-3	재고5,648	600V	75A	300A	2V @ 15V, 40A	520W	280µJ (on), 1.1mJ (off)	Standard	310nC	39ns/200ns	480V, 40A, 5 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AC
AUIRGDC0250	Infineon Technologies	IGBT 1200V 141A 543W TO-220 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 141A Current - Collector Pulsed (Icm): 99A Vce(on) (Max) @ Vge, Ic: 1.57V @ 15V, 33A Power - Max: 543W Switching Energy: 15mJ (off) Input Type: Standard Gate Charge: 227nC Td (on/off) @ 25°C: -/485ns Test Condition: 600V, 33A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: SUPER-220? (TO-273AA)	패키지: TO-220-3	재고3,904	1200V	141A	99A	1.57V @ 15V, 33A	543W	15mJ (off)	Standard	227nC	-/485ns	600V, 33A, 5 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	SUPER-220? (TO-273AA)
IGW60N60H3FKSA1	Infineon Technologies	IGBT 600V TO247-3 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 180A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A Power - Max: 416W Switching Energy: 2.1mJ (on), 1.13mJ (off) Input Type: Standard Gate Charge: 375nC Td (on/off) @ 25°C: 27ns/252ns Test Condition: 400V, 60A, 6 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	패키지: TO-247-3	재고4,768	600V	80A	180A	2.3V @ 15V, 60A	416W	2.1mJ (on), 1.13mJ (off)	Standard	375nC	27ns/252ns	400V, 60A, 6 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
IGW50N60T	Infineon Technologies	IGBT 600V 100A 333W TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Power - Max: 333W Switching Energy: 2.6mJ Input Type: Standard Gate Charge: 310nC Td (on/off) @ 25°C: 26ns/299ns Test Condition: 400V, 50A, 7 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	패키지: TO-247-3	재고432,420	600V	100A	150A	2V @ 15V, 50A	333W	2.6mJ	Standard	310nC	26ns/299ns	400V, 50A, 7 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3