페이지 15 - Infineon Technologies 제품 | Heisener Electronics
고객 문의
SalesDept@heisener.com +86-755-83210559 ext. 807
Language Translation

* Please refer to the English Version as our Official Version.

Infineon Technologies 제품

기록 16,988
페이지  15/607
이미지
부품 번호
제조업체
설명
패키지
재고
수량
hot IRGPS60B120KDP
Infineon Technologies

IGBT 1200V 105A 595W SUPER247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 105A
  • Current - Collector Pulsed (Icm): 240A
  • Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 60A
  • Power - Max: 595W
  • Switching Energy: 3.21mJ (on), 4.78mJ (off)
  • Input Type: Standard
  • Gate Charge: 340nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 600V, 15A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): 180ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-274AA
  • Supplier Device Package: SUPER-247 (TO-274AA)
패키지: TO-274AA
재고5,680
hot IRF7524D1GTRPBF
Infineon Technologies

MOSFET P-CH 20V 1.7A MICRO8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-uSMD
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
재고111,348
IRLR7833CTRRPBF
Infineon Technologies

MOSFET N-CH 30V 140A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 140A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 140W (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고6,464
IPI06N03LA
Infineon Technologies

MOSFET N-CH 25V 50A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 40µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2653pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA
재고6,064
IPB120N10S405ATMA1
Infineon Technologies

MOSFET N-CH TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 120µA
  • Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6540pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고5,232
IPT059N15N3ATMA1
Infineon Technologies

MOSFET N-CH 150V 155A 8HSOF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 155A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 270µA
  • Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 75V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 150A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOF-8-1
  • Package / Case: 8-PowerSFN
패키지: 8-PowerSFN
재고3,744
IRFR4620PBF
Infineon Technologies

MOSFET N-CH 200V 24A D-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 144W (Tc)
  • Rds On (Max) @ Id, Vgs: 78 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고21,366
BSP50H6327XTSA1
Infineon Technologies

TRANS NPN DARL 45V 1A SOT223

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
  • Power - Max: 1.5W
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: PG-SOT223-4
패키지: TO-261-4, TO-261AA
재고5,312
BCR 112T E6327
Infineon Technologies

TRANS PREBIAS NPN 250MW SC75

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 4.7k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 140MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: PG-SC-75
패키지: SC-75, SOT-416
재고4,992
BAT 62-02W E6327
Infineon Technologies

DIODE SCHOTTKY 40V 20MA SCD-80

  • Diode Type: Schottky - Single
  • Voltage - Peak Reverse (Max): 40V
  • Current - Max: 20mA
  • Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
  • Resistance @ If, F: -
  • Power Dissipation (Max): 100mW
  • Operating Temperature: 150°C (TJ)
  • Package / Case: SC-80
  • Supplier Device Package: PG-SCD80-2
패키지: SC-80
재고2,960
IR3811MTR1PBF
Infineon Technologies

IC REG BUCK ADJ 7A SYNC QFN

  • Function: Step-Down
  • Output Configuration: Positive
  • Topology: Buck
  • Output Type: Adjustable
  • Number of Outputs: 1
  • Voltage - Input (Min): 2.5V
  • Voltage - Input (Max): 21V
  • Voltage - Output (Min/Fixed): 0.6V
  • Voltage - Output (Max): 12V
  • Current - Output: 7A
  • Frequency - Switching: 600kHz
  • Synchronous Rectifier: Yes
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 15-PowerVQFN
  • Supplier Device Package: PQFN (5x6)
패키지: 15-PowerVQFN
재고6,704
ICE2PCS04XKLA1
Infineon Technologies

IC PFC CONTROLLER CCM 8DIP

  • Mode: Continuous Conduction (CCM)
  • Frequency - Switching: 133kHz
  • Current - Startup: 450µA
  • Voltage - Supply: 11 V ~ 25 V
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: PG-DIP-8
패키지: 8-DIP (0.300", 7.62mm)
재고3,472
ICE2PCS03GXUMA1
Infineon Technologies

IC PFC CONTROLLER CCM 8DSO

  • Mode: Continuous Conduction (CCM)
  • Frequency - Switching: 100kHz
  • Current - Startup: 450µA
  • Voltage - Supply: 11 V ~ 25 V
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8
패키지: 8-SOIC (0.154", 3.90mm Width)
재고7,680
IR21593SPBF
Infineon Technologies

IC BALLAST CONTROL DIM 16-SOIC

  • Type: Ballast Controller
  • Frequency: 30kHz ~ 230kHz
  • Voltage - Supply: 12 V ~ 16.5 V
  • Current - Supply: 10mA
  • Current - Output Source/Sink: -
  • Dimming: Yes
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
패키지: 16-SOIC (0.154", 3.90mm Width)
재고7,760
SAB82532H10V32A
Infineon Technologies

IC CONTROLLER 2-CH SER 80-MQFP

  • Applications: -
  • Interface: Serial
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Package / Case: 80-QFP
  • Supplier Device Package: PG-MQFP-80
  • Mounting Type: Surface Mount
패키지: 80-QFP
재고4,752
hot PVA2352NSPBF
Infineon Technologies

IC RELAY PHOTOVO 200V 150MA 8SMD

  • Circuit: SPST-NO (1 Form A)
  • Output Type: AC, DC
  • On-State Resistance (Max): 24 Ohm
  • Load Current: 150mA
  • Voltage - Input: 1.2VDC
  • Voltage - Load: 0 ~ 200 V
  • Mounting Type: Surface Mount
  • Termination Style: Gull Wing
  • Package / Case: 8-SMD (0.300", 7.62mm) 4 Leads
  • Supplier Device Package: 8-SMT Modified
  • Relay Type: Relay
패키지: 8-SMD (0.300", 7.62mm) 4 Leads
재고11,148
CHL8328-14CRT
Infineon Technologies

IC REGULATOR PG-VQFN-56-901

  • Applications: Controller, DDR, Intel VR12, AMD SVI, PVI
  • Voltage - Input: 3.3V
  • Number of Outputs: 2
  • Voltage - Output: -
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 56-VFQFN Exposed Pad
  • Supplier Device Package: 56-VQFN (8x8)
패키지: 56-VFQFN Exposed Pad
재고5,296
hot CHL8103-02CRT
Infineon Technologies

IC REG BUCK 40VQFN

  • Output Type: -
  • Function: -
  • Output Configuration: -
  • Topology: -
  • Number of Outputs: -
  • Output Phases: -
  • Voltage - Supply (Vcc/Vdd): -
  • Frequency - Switching: -
  • Duty Cycle (Max): -
  • Synchronous Rectifier: -
  • Clock Sync: -
  • Serial Interfaces: -
  • Control Features: -
  • Operating Temperature: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고16,956
2SP0320T2C017NPSA1
Infineon Technologies

MODULE GATE DRIVER

  • Type: -
  • Configuration: -
  • Current: -
  • Voltage: -
  • Voltage - Isolation: -
  • Package / Case: -
패키지: -
Request a Quote
IRFB5620PBFXKMA1
Infineon Technologies

TRENCH >=100V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 144W (Tc)
  • Rds On (Max) @ Id, Vgs: 72.5mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-904
  • Package / Case: TO-220-3
패키지: -
Request a Quote
FS50R12W2T7PB11BPSA1
Infineon Technologies

LOW POWER EASY

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고54
IGLR60R260D1XUMA1
Infineon Technologies

GAN HV

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 10.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 1.6V @ 690µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 400 V
  • Vgs (Max): -10V
  • FET Feature: -
  • Power Dissipation (Max): 52W (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSON-8-7
  • Package / Case: 8-PowerTDFN
패키지: -
재고14,889
IMM101T015MXUMA1
Infineon Technologies

IMOTION

  • Motor Type - Stepper: Bipolar
  • Motor Type - AC, DC: Brushless DC (BLDC)
  • Function: Driver
  • Output Configuration: Half Bridge (3)
  • Interface: PWM
  • Technology: Power MOSFET
  • Step Resolution: -
  • Applications: General Purpose
  • Current - Output: 4A
  • Voltage - Supply: 13.5V ~ 16.5V
  • Voltage - Load: -
  • Operating Temperature: -40°C ~ 115°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 38-PowerVQFN
  • Supplier Device Package: PG-IQFN-38-1
패키지: -
재고5,997
AIGB15N65F5ATMA1
Infineon Technologies

DISCRETE SWITCHES

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 15 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3-2
패키지: -
재고6,000
CY8C4127LCE-HV423
Infineon Technologies

PSoC4

  • Core Processor: -
  • Core Size: -
  • Speed: -
  • Connectivity: -
  • Peripherals: -
  • Number of I/O: -
  • Program Memory Size: -
  • Program Memory Type: -
  • EEPROM Size: -
  • RAM Size: -
  • Voltage - Supply (Vcc/Vdd): -
  • Data Converters: -
  • Oscillator Type: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
PSB21521EV1-4-G
Infineon Technologies

INCA-IP SOLUTION

  • Function: Single-Chip IP-Phone Solution
  • Interface: -
  • Number of Circuits: -
  • Voltage - Supply: -
  • Current - Supply: -
  • Power (Watts): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 324-LBGA
  • Supplier Device Package: PG-LBGA-324-3
패키지: -
Request a Quote
S25HS01GTDPMHA013
Infineon Technologies

IC FLASH 1GBIT SPI/QUAD 16SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 1Gbit
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 2V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
패키지: -
Request a Quote
CY9AF010AQN-G-104-AVE2
Infineon Technologies

MULTI-MARKET MCUS

  • Core Processor: -
  • Core Size: -
  • Speed: -
  • Connectivity: -
  • Peripherals: -
  • Number of I/O: -
  • Program Memory Size: -
  • Program Memory Type: -
  • EEPROM Size: -
  • RAM Size: -
  • Voltage - Supply (Vcc/Vdd): -
  • Data Converters: -
  • Oscillator Type: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote