페이지 165 - Infineon Technologies 제품

부품 번호	제조업체	설명	패키지	재고
IRG4RC10SDPBF	Infineon Technologies	IGBT 600V 14A 38W DPAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 14A Current - Collector Pulsed (Icm): 18A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A Power - Max: 38W Switching Energy: 310µJ (on), 3.28mJ (off) Input Type: Standard Gate Charge: 15nC Td (on/off) @ 25°C: 76ns/815ns Test Condition: 480V, 8A, 100 Ohm, 15V Reverse Recovery Time (trr): 28ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고126,600
IRGP4263DPBF	Infineon Technologies	IGBT 650V 90A 325W TO-247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 90A Current - Collector Pulsed (Icm): 192A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 48A Power - Max: 325W Switching Energy: 2.9mJ (on), 1.4mJ (off) Input Type: Standard Gate Charge: 145nC Td (on/off) @ 25°C: 70ns/140ns Test Condition: 400V, 48A, 10 Ohm, 15V Reverse Recovery Time (trr): 170ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	패키지: TO-247-3	재고7,728
AUIRFS3004-7P	Infineon Technologies	MOSFET N-CH 40V 240A D2PAK-7P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9130pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 380W (Tc) Rds On (Max) @ Id, Vgs: 1.25 mOhm @ 195A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	패키지: TO-263-7, D2Pak (6 Leads + Tab)	재고36,000
IPB26CNE8N G	Infineon Technologies	MOSFET N-CH 85V 35A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 39µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO-263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고6,704
IRFB42N20D	Infineon Technologies	MOSFET N-CH 200V 44A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3430pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 330W (Tc) Rds On (Max) @ Id, Vgs: 55 mOhm @ 26A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	패키지: TO-220-3	재고2,656
BSS119NH6433XTMA1	Infineon Technologies	MOSFET N-CH 100V 0.19A SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 13µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20.9pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 190mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고6,944
BSC009NE2LS5IATMA1	Infineon Technologies	MOSFET N-CH 25V 40A 8TDSON IND FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 12V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 74W (Tc) Rds On (Max) @ Id, Vgs: 0.95 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	패키지: 8-PowerTDFN	재고52,188
PXFC212551SCV1R250XTMA1	Infineon Technologies	IC AMP RF LDMOS Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,440
BC 857BT E6327	Infineon Technologies	TRANS PNP 45V 0.1A SC-75 Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Power - Max: 330mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: PG-SC-75	패키지: SC-75, SOT-416	재고3,840
BCW68GE6327HTSA1	Infineon Technologies	TRANS PNP 45V 0.8A SOT-23 Transistor Type: PNP Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Power - Max: 330mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고6,896
BCR08PNH6327XTSA1	Infineon Technologies	TRANS NPN/PNP PREBIAS SOT363 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): - Frequency - Transition: 170MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	패키지: 6-VSSOP, SC-88, SOT-363	재고7,584
BB565H7903XTMA1	Infineon Technologies	DIODE VAR CAP 30V 20MA SCD80 Capacitance @ Vr, F: 2.2pF @ 28V, 1MHz Capacitance Ratio: 11 Capacitance Ratio Condition: C1/C28 Voltage - Peak Reverse (Max): 30V Diode Type: Single Q @ Vr, F: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-80 Supplier Device Package: PG-SCD80-2	패키지: SC-80	재고3,584
TLE4274GV50ATMA2	Infineon Technologies	IC REG LINEAR 5V 400MA TO263-3 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 40V Voltage - Output (Min/Fixed): 5V Voltage - Output (Max): - Voltage Dropout (Max): 0.5V @ 250mA Current - Output: 400mA Current - Quiescent (Iq): - Current - Supply (Max): 220µA ~ 30mA PSRR: 60dB (100Hz) Control Features: - Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Operating Temperature: -40°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA Supplier Device Package: PG-TO263-3-1	패키지: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA	재고3,680
BSP77E6433HUMA1	Infineon Technologies	IC SWITCH POWER LOSIDE SOT223-4 Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: Low Side Output Type: N-Channel Interface: On/Off Voltage - Load: 42V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2.17A Rds On (Typ): 70 mOhm Input Type: Non-Inverting Features: Auto Restart Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Operating Temperature: -40°C ~ 150°C (TJ) Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4	패키지: TO-261-4, TO-261AA	재고5,568
IRSM515-055PA	Infineon Technologies	IC MOTOR DRIVER 500V 23SOP Output Configuration: Half Bridge (3) Applications: AC Motors Interface: Logic Load Type: Inductive Technology: UMOS Rds On (Typ): 1.3 Ohm Current - Output / Channel: 2.4A Current - Peak Output: 15A Voltage - Supply: 13.5 V ~ 16.5 V Voltage - Load: 400V (Max) Operating Temperature: -40°C ~ 150°C (TJ) Features: Bootstrap Circuit Fault Protection: UVLO Mounting Type: Surface Mount Package / Case: 32-PowerSMD Module, 23 Leads Supplier Device Package: 23-SOP	패키지: 32-PowerSMD Module, 23 Leads	재고7,936
SAK-TC1775-L40E BA	Infineon Technologies	IC MCU 32BIT 8KB ROM 329BGA Core Processor: TriCore? Core Size: 32-Bit Speed: 40MHz Connectivity: CAN, EBI/EMI, SDLM, SSC, UART/USART Peripherals: POR, WDT Number of I/O: 176 Program Memory Size: 8KB (8K x 8) Program Memory Type: ROM EEPROM Size: - RAM Size: 73K x 8 Voltage - Supply (Vcc/Vdd): 2.3 V ~ 2.75 V Data Converters: A/D 32x12b Oscillator Type: External Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: - Package / Case: 329-BBGA Supplier Device Package: 329-PBGA (31x31)	패키지: 329-BBGA	재고2,896
C515C8EMCAFXQMA1	Infineon Technologies	IC MCU 8BIT 64KB OTP 80MQFP Core Processor: C500 Core Size: 8-Bit Speed: 10MHz Connectivity: CAN, EBI/EMI, SPI, UART/USART Peripherals: POR, PWM, WDT Number of I/O: 49 Program Memory Size: 64KB (64K x 8) Program Memory Type: OTP EEPROM Size: - RAM Size: 2.5K x 8 Voltage - Supply (Vcc/Vdd): 4.25 V ~ 5.5 V Data Converters: A/D 8x10b Oscillator Type: External Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: 80-QFP Supplier Device Package: 80-MQFP (14x14)	패키지: 80-QFP	재고14,874
TVS3V3L4UE6327HTSA1	Infineon Technologies	TVS DIODE 3.3VWM 7.7VC SC74 Type: Zener Unidirectional Channels: 4 Bidirectional Channels: 2 Voltage - Reverse Standoff (Typ): 3.3V (Max) Voltage - Breakdown (Min): - Voltage - Clamping (Max) @ Ipp: 7.7V (Typ) Current - Peak Pulse (10/1000µs): 20A (8/20µs) Power - Peak Pulse: - Power Line Protection: No Applications: Ethernet Capacitance @ Frequency: 2pF @ 1MHz Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SC-74	패키지: SC-74, SOT-457	재고135,768
IM393S6E2XKLA1	Infineon Technologies	POWER MODULE 600V 6A MDIP30 Type: IGBT Configuration: 3 Phase Inverter Current: 6 A Voltage: 600 V Voltage - Isolation: 2000Vrms Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads	패키지: -	Request a Quote
S29GL01GS12DAE020	Infineon Technologies	IC FLASH 1GBIT CFI 64FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 1Gbit Memory Interface: CFI Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 120 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (9x9)	패키지: -	Request a Quote
IAUC100N04S6N028ATMA1	Infineon Technologies	IAUC100N04S6N028ATMA1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 3V @ 24µA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62W (Tc) Rds On (Max) @ Id, Vgs: 2.86mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	패키지: -	재고30,174
CYAT81688-100AA71	Infineon Technologies	PSOC BASED - TRUETOUCH Touchscreen: 2 Wire Capacitive Resolution (Bits): - Interface: I2C, SPI Voltage Reference: - Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V Current - Supply: - Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: -	재고2,700
CY15V108QI-20LPXCT	Infineon Technologies	IC FRAM 8MBIT SPI 20MHZ 8GQFN Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 8Mbit Memory Interface: SPI Clock Frequency: 20 MHz Write Cycle Time - Word, Page: - Access Time: 20 ns Voltage - Supply: 1.71V ~ 1.89V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 8-UQFN Supplier Device Package: 8-GQFN (3.23x3.28)	패키지: -	Request a Quote
TT142N14KOFHPSA1	Infineon Technologies	SCR MODULE 1.4KV 230A MODULE Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1.4 kV Current - On State (It (AV)) (Max): 142 A Current - On State (It (RMS)) (Max): - Voltage - Gate Trigger (Vgt) (Max): 2 V Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 4800A @ 50Hz Current - Hold (Ih) (Max): 200 mA Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: Module	패키지: -	Request a Quote
IPAN60R280P7SXKSA1	Infineon Technologies	MOSFET N-CH 650V 12A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 190µA Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 24W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	패키지: -	재고1,110
IMD112T6F040XUMA1	Infineon Technologies	IMOTION Motor Type - Stepper: Multiphase Motor Type - AC, DC: AC, Synchronous Function: Controller - Speed Output Configuration: Half Bridge (3) Interface: Serial, UART Technology: IGBT Step Resolution: - Applications: General Purpose Current - Output: - Voltage - Supply: 5.5V ~ 20V Voltage - Load: - Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 40-LQFP Supplier Device Package: PG-LQFP-40-1	패키지: -	Request a Quote
IPD70N12S311ATMA2	Infineon Technologies	MOSFET_(120V 300V) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120 V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 83µA Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 11.1mOhm @ 70A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-11 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	패키지: -	Request a Quote
D970N06TXPSA1	Infineon Technologies	DIODE GEN PURP 600V 970A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 970A Voltage - Forward (Vf) (Max) @ If: 970 mV @ 750 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 mA @ 600 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AA, A-PUK Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 180°C	패키지: -	재고36

IRG4RC10SDPBF

Infineon Technologies

IGBT 600V 14A 38W DPAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 14A
Current - Collector Pulsed (Icm): 18A
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
Power - Max: 38W
Switching Energy: 310µJ (on), 3.28mJ (off)
Input Type: Standard
Gate Charge: 15nC
Td (on/off) @ 25°C: 76ns/815ns
Test Condition: 480V, 8A, 100 Ohm, 15V
Reverse Recovery Time (trr): 28ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고126,600

IRGP4263DPBF

Infineon Technologies

IGBT 650V 90A 325W TO-247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 90A
Current - Collector Pulsed (Icm): 192A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 48A
Power - Max: 325W
Switching Energy: 2.9mJ (on), 1.4mJ (off)
Input Type: Standard
Gate Charge: 145nC
Td (on/off) @ 25°C: 70ns/140ns
Test Condition: 400V, 48A, 10 Ohm, 15V
Reverse Recovery Time (trr): 170ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC

패키지: TO-247-3

재고7,728

AUIRFS3004-7P

Infineon Technologies

MOSFET N-CH 40V 240A D2PAK-7P

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9130pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 380W (Tc)
Rds On (Max) @ Id, Vgs: 1.25 mOhm @ 195A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK-7
Package / Case: TO-263-7, D2Pak (6 Leads + Tab)

패키지: TO-263-7, D2Pak (6 Leads + Tab)

재고36,000

IPB26CNE8N G

Infineon Technologies

MOSFET N-CH 85V 35A TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 85V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 39µA
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 40V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 26 mOhm @ 35A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO-263
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고6,704

IRFB42N20D

Infineon Technologies

MOSFET N-CH 200V 44A TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3430pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 2.4W (Ta), 330W (Tc)
Rds On (Max) @ Id, Vgs: 55 mOhm @ 26A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

패키지: TO-220-3

재고2,656

BSS119NH6433XTMA1

Infineon Technologies

MOSFET N-CH 100V 0.19A SOT-23

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 13µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 20.9pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 6 Ohm @ 190mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고6,944

BSC009NE2LS5IATMA1

Infineon Technologies

MOSFET N-CH 25V 40A 8TDSON IND

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 12V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Rds On (Max) @ Id, Vgs: 0.95 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Package / Case: 8-PowerTDFN

패키지: 8-PowerTDFN

재고52,188

PXFC212551SCV1R250XTMA1

Infineon Technologies

IC AMP RF LDMOS

Transistor Type: -
Frequency: -
Gain: -
Voltage - Test: -
Current Rating: -
Noise Figure: -
Current - Test: -
Power - Output: -
Voltage - Rated: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,440

BC 857BT E6327

Infineon Technologies

TRANS PNP 45V 0.1A SC-75

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Power - Max: 330mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: PG-SC-75

패키지: SC-75, SOT-416

재고3,840

BCW68GE6327HTSA1

Infineon Technologies

TRANS PNP 45V 0.8A SOT-23

Transistor Type: PNP
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Power - Max: 330mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고6,896

BCR08PNH6327XTSA1

Infineon Technologies

TRANS NPN/PNP PREBIAS SOT363

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 170MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6

패키지: 6-VSSOP, SC-88, SOT-363

재고7,584

BB565H7903XTMA1

Infineon Technologies

DIODE VAR CAP 30V 20MA SCD80

Capacitance @ Vr, F: 2.2pF @ 28V, 1MHz
Capacitance Ratio: 11
Capacitance Ratio Condition: C1/C28
Voltage - Peak Reverse (Max): 30V
Diode Type: Single
Q @ Vr, F: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-80
Supplier Device Package: PG-SCD80-2

패키지: SC-80

재고3,584

TLE4274GV50ATMA2

Infineon Technologies

IC REG LINEAR 5V 400MA TO263-3

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 40V
Voltage - Output (Min/Fixed): 5V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.5V @ 250mA
Current - Output: 400mA
Current - Quiescent (Iq): -
Current - Supply (Max): 220µA ~ 30mA
PSRR: 60dB (100Hz)
Control Features: -
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
Supplier Device Package: PG-TO263-3-1

패키지: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

재고3,680

BSP77E6433HUMA1

Infineon Technologies

IC SWITCH POWER LOSIDE SOT223-4

Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: Low Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.17A
Rds On (Typ): 70 mOhm
Input Type: Non-Inverting
Features: Auto Restart
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4

패키지: TO-261-4, TO-261AA

재고5,568

IRSM515-055PA

Infineon Technologies

IC MOTOR DRIVER 500V 23SOP

Output Configuration: Half Bridge (3)
Applications: AC Motors
Interface: Logic
Load Type: Inductive
Technology: UMOS
Rds On (Typ): 1.3 Ohm
Current - Output / Channel: 2.4A
Current - Peak Output: 15A
Voltage - Supply: 13.5 V ~ 16.5 V
Voltage - Load: 400V (Max)
Operating Temperature: -40°C ~ 150°C (TJ)
Features: Bootstrap Circuit
Fault Protection: UVLO
Mounting Type: Surface Mount
Package / Case: 32-PowerSMD Module, 23 Leads
Supplier Device Package: 23-SOP

패키지: 32-PowerSMD Module, 23 Leads

재고7,936

SAK-TC1775-L40E BA

Infineon Technologies

IC MCU 32BIT 8KB ROM 329BGA

Core Processor: TriCore?
Core Size: 32-Bit
Speed: 40MHz
Connectivity: CAN, EBI/EMI, SDLM, SSC, UART/USART
Peripherals: POR, WDT
Number of I/O: 176
Program Memory Size: 8KB (8K x 8)
Program Memory Type: ROM
EEPROM Size: -
RAM Size: 73K x 8
Voltage - Supply (Vcc/Vdd): 2.3 V ~ 2.75 V
Data Converters: A/D 32x12b
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: -
Package / Case: 329-BBGA
Supplier Device Package: 329-PBGA (31x31)

패키지: 329-BBGA

재고2,896

C515C8EMCAFXQMA1

Infineon Technologies

IC MCU 8BIT 64KB OTP 80MQFP

Core Processor: C500
Core Size: 8-Bit
Speed: 10MHz
Connectivity: CAN, EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Number of I/O: 49
Program Memory Size: 64KB (64K x 8)
Program Memory Type: OTP
EEPROM Size: -
RAM Size: 2.5K x 8
Voltage - Supply (Vcc/Vdd): 4.25 V ~ 5.5 V
Data Converters: A/D 8x10b
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: 80-QFP
Supplier Device Package: 80-MQFP (14x14)

패키지: 80-QFP

재고14,874

TVS3V3L4UE6327HTSA1

Infineon Technologies

TVS DIODE 3.3VWM 7.7VC SC74

Type: Zener
Unidirectional Channels: 4
Bidirectional Channels: 2
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Voltage - Breakdown (Min): -
Voltage - Clamping (Max) @ Ipp: 7.7V (Typ)
Current - Peak Pulse (10/1000µs): 20A (8/20µs)
Power - Peak Pulse: -
Power Line Protection: No
Applications: Ethernet
Capacitance @ Frequency: 2pF @ 1MHz
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: SC-74

패키지: SC-74, SOT-457

재고135,768

IM393S6E2XKLA1

Infineon Technologies

POWER MODULE 600V 6A MDIP30

Type: IGBT
Configuration: 3 Phase Inverter
Current: 6 A
Voltage: 600 V
Voltage - Isolation: 2000Vrms
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads

패키지: -

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S29GL01GS12DAE020

Infineon Technologies

IC FLASH 1GBIT CFI 64FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 1Gbit
Memory Interface: CFI
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 120 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (9x9)

패키지: -

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IAUC100N04S6N028ATMA1

Infineon Technologies

IAUC100N04S6N028ATMA1

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs(th) (Max) @ Id: 3V @ 24µA
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 62W (Tc)
Rds On (Max) @ Id, Vgs: 2.86mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Package / Case: 8-PowerTDFN

패키지: -

재고30,174

CYAT81688-100AA71

Infineon Technologies

PSOC BASED - TRUETOUCH

Touchscreen: 2 Wire Capacitive
Resolution (Bits): -
Interface: I2C, SPI
Voltage Reference: -
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Current - Supply: -
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: -

재고2,700

CY15V108QI-20LPXCT

Infineon Technologies

IC FRAM 8MBIT SPI 20MHZ 8GQFN

Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 8Mbit
Memory Interface: SPI
Clock Frequency: 20 MHz
Write Cycle Time - Word, Page: -
Access Time: 20 ns
Voltage - Supply: 1.71V ~ 1.89V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UQFN
Supplier Device Package: 8-GQFN (3.23x3.28)

패키지: -

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TT142N14KOFHPSA1

Infineon Technologies

SCR MODULE 1.4KV 230A MODULE

Structure: Series Connection - All SCRs
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 1.4 kV
Current - On State (It (AV)) (Max): 142 A
Current - On State (It (RMS)) (Max): -
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4800A @ 50Hz
Current - Hold (Ih) (Max): 200 mA
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module

패키지: -

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IPAN60R280P7SXKSA1

Infineon Technologies

MOSFET N-CH 650V 12A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 190µA
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 24W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220 Full Pack
Package / Case: TO-220-3 Full Pack

패키지: -

재고1,110

IMD112T6F040XUMA1

Infineon Technologies

IMOTION

Motor Type - Stepper: Multiphase
Motor Type - AC, DC: AC, Synchronous
Function: Controller - Speed
Output Configuration: Half Bridge (3)
Interface: Serial, UART
Technology: IGBT
Step Resolution: -
Applications: General Purpose
Current - Output: -
Voltage - Supply: 5.5V ~ 20V
Voltage - Load: -
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 40-LQFP
Supplier Device Package: PG-LQFP-40-1

패키지: -

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IPD70N12S311ATMA2

Infineon Technologies

MOSFET_(120V 300V)

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 120 V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 70A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-11
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

패키지: -

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D970N06TXPSA1

Infineon Technologies

DIODE GEN PURP 600V 970A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 970A
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 750 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20 mA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Clamp On
Package / Case: DO-200AA, A-PUK
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 180°C

패키지: -

재고36