Infineon Technologies 제품

IRGBC40S

Infineon Technologies

IGBT STD 600V 50A TO-220AB

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 50A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 31A
• Power - Max: 160W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

패키지: TO-220-3

IGP40N65H5XKSA1

Infineon Technologies

IGBT 650V 74A 255W PG-TO247-3

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 74A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
• Power - Max: 255W
• Switching Energy: 390µJ (on), 120µJ (off)
• Input Type: Standard
• Gate Charge: 95nC
• Td (on/off) @ 25°C: 22ns/165ns
• Test Condition: 400V, 20A, 15 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220-3

패키지: TO-220-3

IRFC4768ED

Infineon Technologies

MOSFET N-CH WAFER

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

패키지: -

IPD250N06N3GBTMA1

Infineon Technologies

MOSFET N-CH 60V 28A TO252-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 11µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 36W (Tc)
• Rds On (Max) @ Id, Vgs: 25 mOhm @ 28A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

IRF6607TR1

Infineon Technologies

MOSFET N-CH 30V 27A DIRECTFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 94A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 75nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 6930pF @ 15V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 3.6W (Ta), 42W (Tc)
• Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 25A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DIRECTFET? MT
• Package / Case: DirectFET? Isometric MT

패키지: DirectFET? Isometric MT

IRF3711SPBF

Infineon Technologies

MOSFET N-CH 20V 110A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2980pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
• Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF7466

Infineon Technologies

MOSFET N-CH 30V 11A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 11A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

패키지: 8-SOIC (0.154", 3.90mm Width)

IPP80R360P7XKSA1

Infineon Technologies

MOSFET N-CH 800V COOLMOS TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 280µA
• Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 500V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 84W (Tc)
• Rds On (Max) @ Id, Vgs: 360 mOhm @ 5.6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3
• Package / Case: TO-220-3

패키지: TO-220-3

PTFA260851F V1 R250

Infineon Technologies

IC FET RF LDMOS 85W H-31248-2

• Transistor Type: LDMOS
• Frequency: 2.68GHz
• Gain: 14dB
• Voltage - Test: 28V
• Current Rating: 10µA
• Noise Figure: -
• Current - Test: 900mA
• Power - Output: 85W
• Voltage - Rated: 65V
• Package / Case: 2-Flatpack, Fin Leads
• Supplier Device Package: H-31248-2

패키지: 2-Flatpack, Fin Leads

IRF9362PBF

Infineon Technologies

MOSFET 2P-CH 30V 8A 8SOIC

• FET Type: 2 P-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 8A
• Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 25µA
• Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
• Power - Max: 2W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

BC 857B B5003

Infineon Technologies

TRANS PNP 45V 0.1A SOT-23

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
• Power - Max: 330mW
• Frequency - Transition: 250MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3

패키지: TO-236-3, SC-59, SOT-23-3

TLS810D1EJV50XUMA1

Infineon Technologies

IC REG LINEAR 5V 100MA 8DSO

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 42V
• Voltage - Output (Min/Fixed): 5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.55V @ 100mA
• Current - Output: 100mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 1µA ~ 16µA
• PSRR: 55dB (100Hz)
• Control Features: Enable, Reset
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: PG-DSO-8, e-Pad

패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad

IFX54211MBV33HTSA1

Infineon Technologies

IC REG LINEAR 150MA SCT595

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 150mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-SMD (5 Leads), Gull Wing
• Supplier Device Package: PG-SCT-595

패키지: 6-SMD (5 Leads), Gull Wing

IRMCF311TY

Infineon Technologies

IC MOTOR CONTROLLR I2C/SPI 64QFP

• Motor Type - Stepper: -
• Motor Type - AC, DC: AC, Synchronous
• Function: Controller - Commutation, Direction Management
• Output Configuration: Pre-Driver - Half Bridge (6)
• Interface: I2C, RS-232, SPI
• Technology: Power MOSFET, IGBT
• Step Resolution: -
• Applications: Appliance
• Current - Output: -
• Voltage - Supply: 1.62 V ~ 1.98 V, 3 V ~ 3.6 V
• Voltage - Load: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-QFP

패키지: 64-LQFP

XC886LM8FFA5VACKXUMA1

Infineon Technologies

IC MCU 8BIT 32KB FLASH 48TQFP

• Core Processor: XC800
• Core Size: 8-Bit
• Speed: 24MHz
• Connectivity: LIN, SSI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number of I/O: 34
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 1.75K x 8
• Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: 48-TQFP
• Supplier Device Package: -

패키지: 48-TQFP

XMC1301T016F0032ABXUMA1

Infineon Technologies

IC MCU 32BIT 32KB FLASH 16TSSOP

• Core Processor: ARM? Cortex?-M0
• Core Size: 32-Bit
• Speed: 32MHz
• Connectivity: I2C, LIN, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
• Number of I/O: 11
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 11x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 16-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: PG-TSSOP-16-8

패키지: 16-TSSOP (0.173", 4.40mm Width)

DSL70 E6327

Infineon Technologies

TVS DIODE 50VWM 9VC SOT143

• Type: Steering (Rail to Rail)
• Unidirectional Channels: 2
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 50V (Max)
• Voltage - Breakdown (Min): -
• Voltage - Clamping (Max) @ Ipp: 9V
• Current - Peak Pulse (10/1000µs): 27A (8/20µs)
• Power - Peak Pulse: 245W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 2.5pF @ 1MHz
• Operating Temperature: -55°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-253-4, TO-253AA
• Supplier Device Package: PG-SOT143-4

패키지: TO-253-4, TO-253AA

S27KL0642GABHA023

Infineon Technologies

IC PSRAM 64MBIT HYPERBUS 24FBGA

• Memory Type: Volatile
• Memory Format: PSRAM
• Technology: PSRAM (Pseudo SRAM)
• Memory Size: 64Mbit
• Memory Interface: HyperBus
• Clock Frequency: 200 MHz
• Write Cycle Time - Word, Page: 35ns
• Access Time: 35 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: 24-FBGA (6x8)

패키지: -

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D170U25CXPSA1

Infineon Technologies

DIODE GEN PURP 2.5KV 210A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2500 V
• Current - Average Rectified (Io): 210A
• Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 650 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5 mA @ 2500 V
• Capacitance @ Vr, F: -
• Mounting Type: Stud Mount
• Package / Case: DO-205AA, DO-8, Stud
• Supplier Device Package: -
• Operating Temperature - Junction: -40°C ~ 140°C

패키지: -

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D820N24TXPSA1

Infineon Technologies

DIODE GEN PURP 2.4KV 820A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2400 V
• Current - Average Rectified (Io): 820A
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 750 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 40 mA @ 2400 V
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AA, A-PUK
• Supplier Device Package: -
• Operating Temperature - Junction: -40°C ~ 180°C

패키지: -

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CG8202AA

Infineon Technologies

IC

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

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TLE9274QXV33XUMA1

Infineon Technologies

OPTIREG SYST BASIS CHIPS PG-VQFN

• Applications: -
• Voltage - Input: 4.5V ~ 28V
• Number of Outputs: 4
• Voltage - Output: Multiple
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: PG-VQFN-48-31

패키지: -

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S29GL128S10TFB010

Infineon Technologies

PNOR

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 128Mbit
• Memory Interface: CFI
• Clock Frequency: -
• Write Cycle Time - Word, Page: 60ns
• Access Time: 100 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 56-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 56-TSOP

패키지: -

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IPW65R060CFD7XKSA1

Infineon Technologies

650V FET COOLMOS TO247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 860µA
• Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 171W (Tc)
• Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO247-3
• Package / Case: TO-247-3

패키지: -

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D5810N04TVFXPSA1

Infineon Technologies

DIODE GEN PURP 400V 5800A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 5800A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 mA @ 400 V
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AC, K-PUK
• Supplier Device Package: -
• Operating Temperature - Junction: -40°C ~ 180°C

패키지: -

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DD171N16KKHOSA1

Infineon Technologies

DIODE MODULE DK

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

패키지: -

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S28HL01GTFPBHM030

Infineon Technologies

IC FLASH 1GBIT SPI/OCTAL 24FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 1Gbit
• Memory Interface: SPI - Octal I/O
• Clock Frequency: 166 MHz
• Write Cycle Time - Word, Page: 1.7ms
• Access Time: 6.5 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: 24-FBGA (8x8)

패키지: -

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T690N04TOFXPSA1

Infineon Technologies

SCR MODULE 600V 900A DO200AA

• Structure: Single
• Number of SCRs, Diodes: 1 SCR
• Voltage - Off State: 600 V
• Current - On State (It (AV)) (Max): 694 A
• Current - On State (It (RMS)) (Max): 900 A
• Voltage - Gate Trigger (Vgt) (Max): 1.4 V
• Current - Gate Trigger (Igt) (Max): 150 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 7800A @ 50Hz
• Current - Hold (Ih) (Max): 200 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: TO-200AA

패키지: -