Infineon Technologies 제품

AIKW50N65DF5XKSA1

Infineon Technologies

IC DISCRETE 650V TO247-3

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

IRGIB10B60KD1P

Infineon Technologies

IGBT 600V 16A 44W TO220FP

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 16A
• Current - Collector Pulsed (Icm): 32A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
• Power - Max: 44W
• Switching Energy: 156µJ (on), 165µJ (off)
• Input Type: Standard
• Gate Charge: 41nC
• Td (on/off) @ 25°C: 25ns/180ns
• Test Condition: 400V, 10A, 50 Ohm, 15V
• Reverse Recovery Time (trr): 79ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220AB Full-Pak

패키지: TO-220-3 Full Pack

IPB90N06S4L04ATMA1

Infineon Technologies

MOSFET N-CH 60V 90A TO263-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 90µA
• Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 150W (Tc)
• Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 90A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3-2
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRFR3709ZPBF

Infineon Technologies

MOSFET N-CH 30V 86A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.25V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2330pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 79W (Tc)
• Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

IRFR3504ZTRR

Infineon Technologies

MOSFET N-CH 40V 42A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 90W (Tc)
• Rds On (Max) @ Id, Vgs: 9 mOhm @ 42A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

MMBT3904LT3XT

Infineon Technologies

TRANS NPN 40V 0.2A SOT-23

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 50nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 330mW
• Frequency - Transition: 300MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3

패키지: TO-236-3, SC-59, SOT-23-3

BCX5316H6327XTSA1

Infineon Technologies

TRANSISTOR AF SOT89-4

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 80V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
• Power - Max: 2W
• Frequency - Transition: 125MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: PG-SOT89

패키지: TO-243AA

IDH16G65C5XKSA1

Infineon Technologies

DIODE SCHOTTKY 650V 16A TO220-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io): 16A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 16A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 550µA @ 650V
• Capacitance @ Vr, F: 470pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: PG-TO220-2
• Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-220-2

BAS 70-06 B5003

Infineon Technologies

DIODE ARRAY SCHOTTKY 70V SOT23

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 70V
• Current - Average Rectified (Io) (per Diode): 70mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 100ps
• Current - Reverse Leakage @ Vr: 100nA @ 50V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3

패키지: TO-236-3, SC-59, SOT-23-3

TLE7232GXUMA1

Infineon Technologies

IC SPI DRIVER RELAY CTRL PDSO-24

• Switch Type: General Purpose
• Number of Outputs: 8
• Ratio - Input:Output: 1:8
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: SPI
• Voltage - Load: 4.5 V ~ 5.5 V
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Current - Output (Max): 240mA
• Rds On (Typ): 1 Ohm
• Input Type: -
• Features: -
• Fault Protection: Open Load Detect, Over Temperature
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 24-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: P-DSO-24

패키지: 24-SOIC (0.295", 7.50mm Width)

BTS410E2E3043NKSA1

Infineon Technologies

IC HIGH SIDE PWR SWITCH TO220-5

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 4.7 V ~ 42 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 1.6A
• Rds On (Typ): 190 mOhm
• Input Type: Non-Inverting
• Features: Auto Restart, Status Flag
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-220-5
• Supplier Device Package: P-TO220-5

패키지: TO-220-5

IR1150ISTRPBF

Infineon Technologies

IC PFC CONTROLLER CCM 8-SOIC

• Mode: Continuous Conduction (CCM)
• Frequency - Switching: 200kHz
• Current - Startup: 175µA
• Voltage - Supply: 15 V ~ 20 V
• Operating Temperature: -25°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

IRS2982STRPBF

Infineon Technologies

IC LED FLYBACK CTLR 8SOIC

• Type: AC DC Offline Switcher
• Topology: Flyback
• Internal Switch(s): No
• Number of Outputs: 1
• Voltage - Supply (Min): 11.5V
• Voltage - Supply (Max): 18V
• Voltage - Output: -
• Current - Output / Channel: -
• Frequency: 320kHz
• Dimming: -
• Applications: -
• Operating Temperature: -25°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

IR2233JTR

Infineon Technologies

IC DRIVER 3-PHASE BRIDGE 44-PLCC

• Driven Configuration: Half-Bridge
• Channel Type: 3-Phase
• Number of Drivers: 6
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2V
• Current - Peak Output (Source, Sink): 250mA, 500mA
• Input Type: Inverting
• High Side Voltage - Max (Bootstrap): 1200V
• Rise / Fall Time (Typ): 90ns, 40ns
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 44-LCC (J-Lead), 32 Leads
• Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)

패키지: 44-LCC (J-Lead), 32 Leads

IR2135JTRPBF

Infineon Technologies

IC DRIVER 3PHASE 44-PLCC

• Driven Configuration: Half-Bridge
• Channel Type: 3-Phase
• Number of Drivers: 6
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.2V
• Current - Peak Output (Source, Sink): 250mA, 500mA
• Input Type: Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 90ns, 40ns
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 44-LCC (J-Lead), 32 Leads
• Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)

패키지: 44-LCC (J-Lead), 32 Leads

ICE3B2065I

Infineon Technologies

IC OFFLINE CTRLR SMPS OTP TO220

• Output Isolation: Isolated
• Internal Switch(s): Yes
• Voltage - Breakdown: 650V
• Topology: Flyback
• Voltage - Start Up: 15V
• Voltage - Supply (Vcc/Vdd): 8.5 V ~ 21 V
• Duty Cycle: 72%
• Frequency - Switching: 67kHz
• Power (Watts): 102W
• Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
• Control Features: Soft Start
• Operating Temperature: -25°C ~ 130°C (TJ)
• Package / Case: TO-220-6 Formed Leads
• Supplier Device Package: PG-TO220-6
• Mounting Type: Through Hole

패키지: TO-220-6 Formed Leads

SLE952000029ORIGA2XTMA1

Infineon Technologies

BATTERY MANAGEMENT

• Applications: -
• Core Processor: -
• Program Memory Type: -
• Controller Series: -
• RAM Size: -
• Interface: -
• Number of I/O: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

ESD5V0S5USH6327XTSA1

Infineon Technologies

TVS DIODE 5VWM 13VC SOT363

• Type: Zener
• Unidirectional Channels: 5
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 5V
• Voltage - Breakdown (Min): 5.7V
• Voltage - Clamping (Max) @ Ipp: 13V
• Current - Peak Pulse (10/1000µs): 10A (8/20µs)
• Power - Peak Pulse: 130W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-VSSOP, SC-88, SOT-363
• Supplier Device Package: PG-SOT363-6

패키지: 6-VSSOP, SC-88, SOT-363

IRMCO203M

Infineon Technologies

INTEGRATED CIRCUIT

• Motor Type - Stepper: -
• Motor Type - AC, DC: -
• Function: -
• Output Configuration: -
• Interface: -
• Technology: -
• Step Resolution: -
• Applications: -
• Current - Output: -
• Voltage - Supply: -
• Voltage - Load: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

2EDN8523GXTMA1

Infineon Technologies

DRIVER IC

• Driven Configuration: Low-Side
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: N-Channel MOSFET
• Voltage - Supply: 4.5 V ~ 20 V
• Logic Voltage - VIL, VIH: 1.2V, 1.9V
• Current - Peak Output (Source, Sink): 5A, 5A
• Input Type: Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 5.3ns, 4.5ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-WDFN Exposed Pad
• Supplier Device Package: PG-WSON-8-1

패키지: 8-WDFN Exposed Pad

D1031SH45TXPSA1

Infineon Technologies

DIODE GEN PURP 4.5KV 1450A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 4500 V
• Current - Average Rectified (Io): 1450A
• Voltage - Forward (Vf) (Max) @ If: 4.2 V @ 2500 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 mA @ 4500 V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: DO-200AD
• Supplier Device Package: -
• Operating Temperature - Junction: 0°C ~ 140°C

패키지: -

Request a Quote

T1500N14TOFVTXPSA1

Infineon Technologies

SCR MODULE 1800V 3500A DO200AC

• Structure: Single
• Number of SCRs, Diodes: 1 SCR
• Voltage - Off State: 1.8 kV
• Current - On State (It (AV)) (Max): 1500 A
• Current - On State (It (RMS)) (Max): 3500 A
• Voltage - Gate Trigger (Vgt) (Max): 2 V
• Current - Gate Trigger (Igt) (Max): 250 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 39000A @ 50Hz
• Current - Hold (Ih) (Max): 500 mA
• Operating Temperature: -40°C ~ 140°C
• Mounting Type: Clamp On
• Package / Case: DO-200AB, B-PUK

패키지: -

Request a Quote

IKZA40N65EH7XKSA1

Infineon Technologies

IGBT TRENCH FS 650V 80A TO247-4

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 80 A
• Current - Collector Pulsed (Icm): 160 A
• Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 40A
• Power - Max: 210 W
• Switching Energy: 0.37mJ (on), 0.36mJ (off)
• Input Type: Standard
• Gate Charge: 81 nC
• Td (on/off) @ 25°C: 13ns/134ns
• Test Condition: 400V, 40A, 12.5Ohm, 15V
• Reverse Recovery Time (trr): 49.6 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-4
• Supplier Device Package: PG-TO247-4-3

패키지: -

S27KL0642GABHM023

Infineon Technologies

IC PSRAM 64MBIT HYPERBUS 24FBGA

• Memory Type: Volatile
• Memory Format: PSRAM
• Technology: PSRAM (Pseudo SRAM)
• Memory Size: 64Mbit
• Memory Interface: HyperBus
• Clock Frequency: 200 MHz
• Write Cycle Time - Word, Page: 35ns
• Access Time: 35 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: 24-FBGA (6x8)

패키지: -

Request a Quote

TD160N16SOFHPSA1

Infineon Technologies

SCR MODULE 1600V 275A MODULE

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 1.6 kV
• Current - On State (It (AV)) (Max): 160 A
• Current - On State (It (RMS)) (Max): 275 A
• Voltage - Gate Trigger (Vgt) (Max): 2.5 V
• Current - Gate Trigger (Igt) (Max): 145 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
• Current - Hold (Ih) (Max): 200 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module

패키지: -

CY95F698KNPMC-GXXXUNERE2

Infineon Technologies

MULTI-MARKET MCUS

• Core Processor: F²MC-8FX
• Core Size: 8-Bit
• Speed: 16.25MHz
• Connectivity: I2C, LINbus, SIO, UART/USART
• Peripherals: LVD, LVR, POR, PWM, WDT
• Number of I/O: 45
• Program Memory Size: 60KB (60K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 2K x 8
• Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
• Data Converters: A/D 12x8/10b
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-LQFP
• Supplier Device Package: 48-LQFP (7x7)

패키지: -

Request a Quote

FF400R12KE3S5HOSA1

Infineon Technologies

IGBT MODULE

• IGBT Type: -
• Configuration: Half Bridge Inverter
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 580 A
• Power - Max: 2000 W
• Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
• Current - Collector Cutoff (Max): 5 mA
• Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-62MM

패키지: -

Request a Quote

2ED2304S06FXLLA1

Infineon Technologies

LEVEL SHIFT SOI

• Driven Configuration: Half-Bridge
• Channel Type: Synchronous
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10V ~ 17.5V
• Logic Voltage - VIL, VIH: 1.1V, 1.7V
• Current - Peak Output (Source, Sink): 360mA, 700mA
• Input Type: CMOS
• High Side Voltage - Max (Bootstrap): 650 V
• Rise / Fall Time (Typ): 48ns, 24ns
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8-910

패키지: -

Request a Quote