페이지 279 - Infineon Technologies 제품 | Heisener Electronics
고객 문의
SalesDept@heisener.com +86-755-83210559 ext. 807
Language Translation

* Please refer to the English Version as our Official Version.

Infineon Technologies 제품

기록 16,988
페이지  279/607
이미지
부품 번호
제조업체
설명
패키지
재고
수량
IRF6720S2TRPBF
Infineon Technologies

MOSFET N-CH 30V 11A DIRECTFET-S1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.7W (Ta), 17W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET S1
  • Package / Case: DirectFET? Isometric S1
패키지: DirectFET? Isometric S1
재고3,584
IRF7477TR
Infineon Technologies

MOSFET N-CH 30V 14A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2710pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고3,568
IRF300P227
Infineon Technologies

MOSFET IFX OPTIMOS TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 270µA
  • Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4893pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 313W (Tc)
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3
패키지: TO-247-3
재고7,600
IPD65R250E6XTMA1
Infineon Technologies

MOSFET N-CH TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 16.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 400µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 1000V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 208W (Tc)
  • Rds On (Max) @ Id, Vgs: 250 mOhm @ 4.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고4,864
hot IRF9321TRPBF
Infineon Technologies

MOSFET P-CH 30V 15A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2590pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고750,684
BFR193FH6327XTSA1
Infineon Technologies

TRANS RF NPN 12V 80MA TSFP-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
  • Gain: 12.5dB
  • Power - Max: 580mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: PG-TSFP-3
패키지: SOT-723
재고29,568
BA892H6327XTSA1
Infineon Technologies

DIODE RF SW 35V 100MA SCD80

  • Diode Type: Standard - Single
  • Voltage - Peak Reverse (Max): 35V
  • Current - Max: 100mA
  • Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
  • Resistance @ If, F: 500 mOhm @ 10mA, 100MHz
  • Power Dissipation (Max): -
  • Operating Temperature: 150°C (TJ)
  • Package / Case: SC-80
  • Supplier Device Package: PG-SCD80-2
패키지: SC-80
재고4,624
BAR6704E6327HTSA1
Infineon Technologies

DIODE SIL PIN 150V 200MA SOT-23

  • Diode Type: PIN - 1 Pair Series Connection
  • Voltage - Peak Reverse (Max): 150V
  • Current - Max: 200mA
  • Capacitance @ Vr, F: 0.55pF @ 5V, 1MHz
  • Resistance @ If, F: 1 Ohm @ 10mA, 100MHz
  • Power Dissipation (Max): 250mW
  • Operating Temperature: 150°C (TJ)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고2,944
IDK05G65C5XTMA2
Infineon Technologies

DIODE SCHOTTKY 650V 5A TO263-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 5A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 830µA @ 650V
  • Capacitance @ Vr, F: 160pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-2
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고2,864
PEB 2026 T-P V1.1
Infineon Technologies

IC CTRLR N-CH ISDN HV PDSO20-10

  • Type: -
  • Applications: -
  • Mounting Type: Surface Mount
  • Package / Case: 20-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: P-DSO-20
패키지: 20-SOIC (0.295", 7.50mm Width)
재고5,824
hot IRU3138CSTRPBF
Infineon Technologies

IC REG CTRLR BUCK 14SOIC

  • Output Type: Transistor Driver
  • Function: Step-Down
  • Output Configuration: Positive
  • Topology: Buck
  • Number of Outputs: 1
  • Output Phases: 1
  • Voltage - Supply (Vcc/Vdd): 4.25 V ~ 25 V
  • Frequency - Switching: 200kHz ~ 400kHz
  • Duty Cycle (Max): 90%
  • Synchronous Rectifier: Yes
  • Clock Sync: No
  • Serial Interfaces: -
  • Control Features: Enable, Frequency Control, Soft Start
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SOIC
패키지: 14-SOIC (0.154", 3.90mm Width)
재고60,000
hot BTS621L1 E3128A
Infineon Technologies

IC SW PWR HISIDE TO-220AB/7 SMD

  • Switch Type: General Purpose
  • Number of Outputs: 2
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 5 V ~ 34 V
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 3.5A
  • Rds On (Typ): 80 mOhm
  • Input Type: Non-Inverting
  • Features: Auto Restart, Status Flag
  • Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
  • Supplier Device Package: PG-TO263-7-2
패키지: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
재고24,000
98-1222PBF
Infineon Technologies

IC BALLAST CTRL 600V

  • Type: -
  • Frequency: -
  • Voltage - Supply: -
  • Current - Supply: -
  • Current - Output Source/Sink: -
  • Dimming: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고7,200
C165LF3VHABXUMA1
Infineon Technologies

IC MCU 16BIT ROMLESS 100TQFP

  • Core Processor: C166
  • Core Size: 16-Bit
  • Speed: 20MHz
  • Connectivity: EBI/EMI, SPI, UART/USART
  • Peripherals: POR, PWM, WDT
  • Number of I/O: 77
  • Program Memory Size: -
  • Program Memory Type: ROMless
  • EEPROM Size: -
  • RAM Size: 2K x 8
  • Voltage - Supply (Vcc/Vdd): 3 V ~ 3.6 V
  • Data Converters: -
  • Oscillator Type: External
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
패키지: 100-LQFP
재고2,240
XMC1301T038F0032ABXUMA1
Infineon Technologies

IC MCU 32BIT 32KB FLASH 38TSSOP

  • Core Processor: ARM? Cortex?-M0
  • Core Size: 32-Bit
  • Speed: 32MHz
  • Connectivity: I2C, LIN, SPI, UART/USART
  • Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
  • Number of I/O: 26
  • Program Memory Size: 32KB (32K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 16K x 8
  • Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
  • Data Converters: A/D 16x12b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: 38-TFSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 38-TSSOP
패키지: 38-TFSOP (0.173", 4.40mm Width)
재고7,936
ESD237B1W0201E6327XTSA1
Infineon Technologies

TVS DIODE BIDIRECT SG-WLL-2

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 8V (Max)
  • Voltage - Breakdown (Min): -
  • Voltage - Clamping (Max) @ Ipp: 17V (Typ)
  • Current - Peak Pulse (10/1000µs): -
  • Power - Peak Pulse: -
  • Power Line Protection: -
  • Applications: -
  • Capacitance @ Frequency: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 2-XFDFN
  • Supplier Device Package: WLL-2-1
패키지: 2-XFDFN
재고5,490
CY8C4025LQI-T411
Infineon Technologies

CONSUMER / IOT MCUS

  • Core Processor: ARM® Cortex®-M0+
  • Core Size: 32-Bit
  • Speed: 24MHz
  • Connectivity: I2C, Microwire, SPI, SSP, UART/USART
  • Peripherals: Brown-out Detect/Reset, CapSense, POR, PWM, WDT
  • Number of I/O: 11
  • Program Memory Size: 32KB (32K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 4K x 8
  • Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
  • Data Converters: -
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-UFQFN
  • Supplier Device Package: 16-QFN (3x3)
패키지: -
Request a Quote
IPD036N04LGBTMA1
Infineon Technologies

MOSFET N-CH 40V 90A TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 45µA
  • Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 94W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.6mOhm @ 90A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
Request a Quote
IRFH7440TR2PBF
Infineon Technologies

MOSFET N-CH 40V 85A 8PQFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 3.9V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4574 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PQFN (5x6)
  • Package / Case: 8-PowerTDFN
패키지: -
Request a Quote
CYUSB3312-BVXC
Infineon Technologies

USB SUPER SPEED HUBS

  • Applications: USB 3.0 Hub Controller
  • Core Processor: ARM® Cortex®-M0
  • Program Memory Type: ROM (32kB)
  • Controller Series: CYUSB
  • RAM Size: 16K x 8
  • Interface: I2C
  • Number of I/O: 10
  • Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V
  • Operating Temperature: 0°C ~ 70°C
  • Mounting Type: Surface Mount
  • Package / Case: 100-VFBGA
  • Supplier Device Package: 100-VFBGA (6x6)
패키지: -
Request a Quote
CY7C1360A-150AC
Infineon Technologies

IC SRAM 9MBIT 150MHZ 100LQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, SDR
  • Memory Size: 9Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 150 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.5 ns
  • Voltage - Supply: 3.135V ~ 3.6V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20)
패키지: -
Request a Quote
CY8C4245PVA-452Z
Infineon Technologies

PSOC4 - GENERAL

  • Core Processor: ARM® Cortex®-M0
  • Core Size: 32-Bit
  • Speed: 48MHz
  • Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
  • Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
  • Number of I/O: 24
  • Program Memory Size: 32KB (32K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 4K x 8
  • Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
  • Data Converters: A/D 8x12b SAR; D/A 2x7/8b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-SSOP (0.209", 5.30mm Width)
  • Supplier Device Package: 28-SSOP
패키지: -
Request a Quote
TZ860N16KOFTIMHPSA1
Infineon Technologies

SCR MODULE 1600V 1500A MODULE

  • Structure: Single
  • Number of SCRs, Diodes: 1 SCR
  • Voltage - Off State: 1.6 kV
  • Current - On State (It (AV)) (Max): 860 A
  • Current - On State (It (RMS)) (Max): 1500 A
  • Voltage - Gate Trigger (Vgt) (Max): 2 V
  • Current - Gate Trigger (Igt) (Max): 250 mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 46000A @ 50Hz
  • Current - Hold (Ih) (Max): 500 mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
패키지: -
Request a Quote
F4200R17N3E4BPSA1
Infineon Technologies

IGBT MOD 1700V 200A 20MW

  • IGBT Type: Trench Field Stop
  • Configuration: Full Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 200 A
  • Power - Max: 20 mW
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 18 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고30
CY8C4A45AZI-483
Infineon Technologies

IC MCU 32BIT 32KB FLASH 48TQFP

  • Core Processor: ARM® Cortex®-M0+
  • Core Size: 32-Bit Single-Core
  • Speed: 48MHz
  • Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
  • Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
  • Number of I/O: 38
  • Program Memory Size: 32KB (32K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 4K x 8
  • Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
  • Data Converters: A/D 16x10b, 8x12b SAR; D/A 2x7b, 2x13b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-LQFP
  • Supplier Device Package: 48-TQFP (7x7)
패키지: -
Request a Quote
PEF24625EV1-1
Infineon Technologies

SOCRATES 16-CH DSL CONTROLLER

  • Function: -
  • Interface: -
  • Number of Circuits: -
  • Voltage - Supply: -
  • Current - Supply: -
  • Power (Watts): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
S25FS064SDSMFB010
Infineon Technologies

IC FLASH 64MBIT SPI/QUAD 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mbit
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 80 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 2V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOIC
패키지: -
Request a Quote
CY95F636HNPMC-G-UNE2
Infineon Technologies

MULTI-MARKET MCUS

  • Core Processor: F²MC-8FX
  • Core Size: 8-Bit
  • Speed: 16.25MHz
  • Connectivity: I2C, LINbus, SIO, UART/USART
  • Peripherals: POR, PWM, WDT
  • Number of I/O: 28
  • Program Memory Size: 36KB (36K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 1K x 8
  • Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
  • Data Converters: A/D 8x8/10b
  • Oscillator Type: External
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LQFP
  • Supplier Device Package: 32-LQFP (7x7)
패키지: -
Request a Quote