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Infineon Technologies 제품

기록 16,988
페이지  293/607
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IPI50R350CP
Infineon Technologies

MOSFET N-CH 550V 10A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 550V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 370µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 350 mOhm @ 5.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA
재고5,632
BSS159N E6906
Infineon Technologies

MOSFET N-CH 60V 230MA SOT-23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 26µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 44pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 360mW (Ta)
  • Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 160mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고2,976
IRLR8503PBF
Infineon Technologies

MOSFET N-CH 30V 44A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 62W (Tc)
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고5,824
IPW60R099P6XKSA1
Infineon Technologies

MOSFET N-CH 600V TO247-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.21mA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3330pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 278W (Tc)
  • Rds On (Max) @ Id, Vgs: 99 mOhm @ 14.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3
  • Package / Case: TO-247-3
패키지: TO-247-3
재고7,296
IPD200N15N3GATMA1
Infineon Technologies

MOSFET N-CH 150V 50A TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 90µA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 75V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고55,086
BC847CWE6327BTSA1
Infineon Technologies

TRANS NPN 45V 0.1A SOT-323

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
  • Power - Max: 250mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
패키지: SC-70, SOT-323
재고2,656
BB914E6327HTSA1
Infineon Technologies

DIODE VAR CAP 18V 50MA SOT-23

  • Capacitance @ Vr, F: 19.75pF @ 8V, 1MHz
  • Capacitance Ratio: 2.42
  • Capacitance Ratio Condition: C2/C8
  • Voltage - Peak Reverse (Max): 18V
  • Diode Type: 1 Pair Common Cathode
  • Q @ Vr, F: -
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고4,368
BB639E7904HTSA1
Infineon Technologies

DIODE VAR CAP 30V 20MA SOD-323

  • Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
  • Capacitance Ratio: 14.7
  • Capacitance Ratio Condition: C1/C28
  • Voltage - Peak Reverse (Max): 30V
  • Diode Type: Single
  • Q @ Vr, F: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: PG-SOD323-2
패키지: SC-76, SOD-323
재고56,250
SIDC09D60E6 UNSAWN
Infineon Technologies

DIODE GEN PURP 600V 20A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 20A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 27µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: Die
재고4,224
BAS21UE6433HTMA1
Infineon Technologies

DIODE ARRAY GP 200V 250MA SC74-6

  • Diode Configuration: 3 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io) (per Diode): 250mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 100nA @ 200V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: PG-SC74-6
패키지: SC-74, SOT-457
재고2,768
TLE73682EXUMA2
Infineon Technologies

IC PS SYSTEM MULTI VOLT 36PDSOP

  • Applications: Power Supply, Automotive Applications
  • Voltage - Input: 4.5 V ~ 45 V
  • Number of Outputs: 3
  • Voltage - Output: 5V, 3.3V/2.6V, 1.2V
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
  • Supplier Device Package: PG-DSO-36
패키지: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
재고3,328
TLE4286GNTSA1
Infineon Technologies

IC REG LINEAR 5V 15MA SCT595-5

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 42V
  • Voltage - Output (Min/Fixed): 5V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 1.1V @ 10mA
  • Current - Output: 15mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 100µA
  • PSRR: 60dB (100Hz)
  • Control Features: Inhibit
  • Protection Features: Over Temperature, Short Circuit
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD (5 Leads), Gull Wing
  • Supplier Device Package: PG-SCT595-5
패키지: 6-SMD (5 Leads), Gull Wing
재고2,064
hot IRU1030-33CM
Infineon Technologies

IC REG LINEAR 3.3V 3A TO263

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 7V
  • Voltage - Output (Min/Fixed): 3.3V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 1.3V @ 3A
  • Current - Output: 3A
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 10mA
  • PSRR: 70dB (120Hz)
  • Control Features: -
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: 0°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
  • Supplier Device Package: TO-263
패키지: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
재고13,380
TLV49642MXTMA1
Infineon Technologies

IC HALL EFFECT SWITCH SOT23-3

  • Function: -
  • Technology: -
  • Polarization: -
  • Sensing Range: -
  • Test Condition: -
  • Voltage - Supply: -
  • Current - Supply (Max): -
  • Current - Output (Max): -
  • Output Type: -
  • Features: -
  • Operating Temperature: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고7,092
TLE9185QXXUMA1
Infineon Technologies

IC MOTOR DVR 3PH 5V 250MA 48VQFN

  • Motor Type - Stepper: Multiphase
  • Motor Type - AC, DC: Brushless DC (BLDC)
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Pre-Driver - Half Bridge (3)
  • Interface: SPI
  • Technology: NMOS
  • Step Resolution: -
  • Applications: General Purpose
  • Current - Output: 250mA
  • Voltage - Supply: 4.5V ~ 28V
  • Voltage - Load: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFQFN Exposed Pad
  • Supplier Device Package: PG-VQFN-48-29
패키지: -
재고7,455
2ED2181S06FXUMA1
Infineon Technologies

IC HALF BRIDGE GATE DRIVER 650V

  • Driven Configuration: High-Side or Low-Side
  • Channel Type: Synchronous
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10V ~ 20V
  • Logic Voltage - VIL, VIH: 1.1V, 1.7V
  • Current - Peak Output (Source, Sink): 2.5A, 2.5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 650 V
  • Rise / Fall Time (Typ): 15ns, 15ns
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8-53
패키지: -
재고19,767
IFX27001TFV26ATMA1
Infineon Technologies

IC REG LINEAR FIXED LDO REG

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 40V
  • Voltage - Output (Min/Fixed): 2.6V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 1.4V @ 1A
  • Current - Output: 1A
  • Current - Quiescent (Iq): 1.6 mA
  • Current - Supply (Max): -
  • PSRR: 65dB (120Hz)
  • Control Features: -
  • Protection Features: Over Current, Over Temperature, Short Circuit
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3-11
패키지: -
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CY9BF167RPMC-GNE2
Infineon Technologies

IC MCU 32BIT 800KB FLASH 120LQFP

  • Core Processor: ARM® Cortex®-M4F
  • Core Size: 32-Bit Single-Core
  • Speed: 160MHz
  • Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART
  • Peripherals: DMA, LVD, POR, PWM, WDT
  • Number of I/O: 100
  • Program Memory Size: 800KB (800K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 96K x 8
  • Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
  • Data Converters: A/D 24x12b SAR; D/A 2x12b
  • Oscillator Type: External, Internal
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 120-LQFP
  • Supplier Device Package: 120-LQFP (16x16)
패키지: -
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IMBG65R057M1HXTMA1
Infineon Technologies

SILICON CARBIDE MOSFET PG-TO263-

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5.7V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V
  • Vgs (Max): +23V, -5V
  • FET Feature: -
  • Power Dissipation (Max): 161W (Tc)
  • Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7-12
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
패키지: -
재고2,769
CYAT817L-128AA72
Infineon Technologies

PSOC BASED - TRUETOUCH

  • Core Processor: ARM® Cortex®-M0+
  • Core Size: 32-Bit
  • Speed: 48MHz
  • Connectivity: I2C, SPI, UART/USART
  • Peripherals: PWM
  • Number of I/O: 29
  • Program Memory Size: 48KB (48K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 4K x 8
  • Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
  • Data Converters: -
  • Oscillator Type: -
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 128-LQFP
  • Supplier Device Package: PG-TQFP-128-800
패키지: -
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F1225R12KT4GBOSA1
Infineon Technologies

IGBT MOD 1200V 25A 160W

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 25 A
  • Power - Max: 160 W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고24
SIDC14D60C8X7SA1
Infineon Technologies

DIODE GEN PURP 600V 50A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
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CY15B116QN-40BKXIT
Infineon Technologies

FRAM

  • Memory Type: Non-Volatile
  • Memory Format: FRAM
  • Technology: FRAM (Ferroelectric RAM)
  • Memory Size: 16Mbit
  • Memory Interface: SPI
  • Clock Frequency: 40 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 9 ns
  • Voltage - Supply: 1.8V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-FBGA (6x8)
패키지: -
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IPA600N25NM3SXKSA1
Infineon Technologies

MOSFET N-CH 250V 15A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 89µA
  • Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 38W (Tc)
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
패키지: -
재고1,182
CY8C4248FNI-BL573T
Infineon Technologies

IC MCU 32BIT 256KB FLASH 76WLCSP

  • Core Processor: ARM® Cortex®-M0
  • Core Size: 32-Bit Single-Core
  • Speed: 48MHz
  • Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
  • Peripherals: Bluetooth, Brown-out Detect/Reset, CapSense, DMA , LVD, POR, PWM, SmartCard, SmartSense, WDT
  • Number of I/O: 36
  • Program Memory Size: 256KB (256K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 32K x 8
  • Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
  • Data Converters: A/D 16x12b; D/A 1x7b, 1x8b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 76-UFBGA, WLCSP
  • Supplier Device Package: 76-WLCSP (4.04x3.87)
패키지: -
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AIDW10S65C5XKSA1
Infineon Technologies

DIODE SIL CARB 650V 10A TO247-3

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 60 µA @ 650 V
  • Capacitance @ Vr, F: 303pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-41
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
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IPB80P04P407ATMA2
Infineon Technologies

MOSFET_(20V 40V) PG-TO263-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 88W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.4mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
패키지: -
재고5,637
IPLK70R2K0P7ATMA1
Infineon Technologies

MOSFET N-CH 700V TDSON-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 700 V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8
  • Package / Case: 8-PowerTDFN
패키지: -
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