Infineon Technologies 제품

IRG8CH106K10F

Infineon Technologies

IGBT 1200V 110A DIE

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 110A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 700nC
• Td (on/off) @ 25°C: 80ns/380ns
• Test Condition: 600V, 110A, 1 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

패키지: Die

IRG4PC40KDE206P

Infineon Technologies

IGBT 600V 42A 160W TO247AC

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 42A
• Current - Collector Pulsed (Icm): 84A
• Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A
• Power - Max: 160W
• Switching Energy: 950µJ (on), 760µJ (off)
• Input Type: Standard
• Gate Charge: 120nC
• Td (on/off) @ 25°C: 53ns/110ns
• Test Condition: 480V, 25A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 42ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

패키지: TO-247-3

FS820R08A6P2LBBPSA1

Infineon Technologies

HYBRID PACK DRIVE

• IGBT Type: -
• Configuration: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: -
• NTC Thermistor: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

IRF3707ZCSTRRP

Infineon Technologies

MOSFET N-CH 30V 59A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.25V @ 25µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1210pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 57W (Tc)
• Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 21A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRFR2905ZTRRPBF

Infineon Technologies

MOSFET N-CH 55V 42A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 110W (Tc)
• Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 36A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

BSP89L6327HTSA1

Infineon Technologies

MOSFET N-CH 240V 350MA SOT-223

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 240V
• Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1.8V @ 108µA
• Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.8W (Ta)
• Rds On (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT223-4
• Package / Case: TO-261-4, TO-261AA

패키지: TO-261-4, TO-261AA

IPA60R230P6XKSA1

Infineon Technologies

MOSFET N-CH 600V TO220FP-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 16.8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 530µA
• Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 33W (Tc)
• Rds On (Max) @ Id, Vgs: 230 mOhm @ 6.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO-220-FP
• Package / Case: TO-220-3 Full Pack

패키지: TO-220-3 Full Pack

IRFP4004PBF

Infineon Technologies

MOSFET N-CH 40V 195A TO-247AC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 8920pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 380W (Tc)
• Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 195A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247AC
• Package / Case: TO-247-3

패키지: TO-247-3

SIDC08D60C6Y

Infineon Technologies

DIODE GEN PURP 600V 30A WAFER

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 30A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.95V @ 30A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 27µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Sawn on foil
• Operating Temperature - Junction: -40°C ~ 175°C

패키지: Die

IRU3038CSTR

Infineon Technologies

IC REG CTRLR BUCK/BOOST 14SOIC

• Output Type: Transistor Driver
• Function: Step-Up, Step-Down
• Output Configuration: Positive
• Topology: Buck, Boost
• Number of Outputs: 1
• Output Phases: 1
• Voltage - Supply (Vcc/Vdd): 4.2 V ~ 25 V
• Frequency - Switching: 200kHz
• Duty Cycle (Max): 90%
• Synchronous Rectifier: Yes
• Clock Sync: No
• Serial Interfaces: -
• Control Features: Frequency Control, Soft Start
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 14-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 14-SOIC

패키지: 14-SOIC (0.154", 3.90mm Width)

IR3531AMTRPBF

Infineon Technologies

IC OUTPUT CTRL 4+1 PHASE 48MLPQ

• Applications: Dual Power Supply Controller
• Voltage - Input: 10.8 V ~ 13.2 V
• Voltage - Supply: 6.6 V ~ 7 V
• Current - Supply: 7mA
• Operating Temperature: 0°C ~ 100°C
• Mounting Type: Surface Mount
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: 48-MLPQ (7x7)

패키지: 48-VFQFN Exposed Pad

IRMCF171TR

Infineon Technologies

IC MOTOR CTLR I2C/SPI 48LQFP

• Motor Type - Stepper: -
• Motor Type - AC, DC: AC, Induction, Synchronous
• Function: Controller - Commutation, Direction Management
• Output Configuration: Pre-Driver - Half Bridge (3)
• Interface: I2C, RS-232, SPI
• Technology: Power MOSFET
• Step Resolution: -
• Applications: Appliance
• Current - Output: -
• Voltage - Supply: 3V ~ 3.6V
• Voltage - Load: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-LQFP
• Supplier Device Package: 48-LQFP (7x7)

패키지: 48-LQFP

IRS2509CD

Infineon Technologies

IC MOSFET DRIVER

• Driven Configuration: -
• Channel Type: -
• Number of Drivers: -
• Gate Type: -
• Voltage - Supply: -
• Logic Voltage - VIL, VIH: -
• Current - Peak Output (Source, Sink): -
• Input Type: -
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

IRS2332STRPBF

Infineon Technologies

IC DVR 3-PHASE BRIDGE 28SOIC

• Driven Configuration: Half-Bridge
• Channel Type: 3-Phase
• Number of Drivers: 6
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.2V
• Current - Peak Output (Source, Sink): 250mA, 500mA
• Input Type: Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 80ns, 35ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 28-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 28-SOIC

패키지: 28-SOIC (0.295", 7.50mm Width)

SAF-C868P-1SR BA

Infineon Technologies

IC MCU 8BIT 8KB RAM 38TSSOP

• Core Processor: C800
• Core Size: 8-Bit
• Speed: 40MHz
• Connectivity: UART/USART
• Peripherals: Brown-out Detect/Reset, PWM, WDT
• Number of I/O: 18
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: RAM
• EEPROM Size: -
• RAM Size: 512 x 8
• Voltage - Supply (Vcc/Vdd): 3 V ~ 3.6 V
• Data Converters: A/D 5x8b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 38-TFSOP (0.173", 4.40mm Width)
• Supplier Device Package: 38-TSSOP

패키지: 38-TFSOP (0.173", 4.40mm Width)

TLE9263BQXXUMA1

Infineon Technologies

IC SBC 48VQFN

• Applications: Automotive
• Interface: SPI
• Voltage - Supply: 28V
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: PG-VQFN-48-31
• Mounting Type: Surface Mount

패키지: 48-VFQFN Exposed Pad

CHL8228G-13CRT

Infineon Technologies

IC REGULATOR PG-VQFN-56-901

• Applications: Controller, GPU Core Power
• Voltage - Input: 3.3V
• Number of Outputs: 2
• Voltage - Output: -
• Operating Temperature: 0°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 56-VFQFN Exposed Pad
• Supplier Device Package: 56-VQFN (8x8)

패키지: 56-VFQFN Exposed Pad

TLE4208GNT

Infineon Technologies

IC MOTOR DRIVER PAR 28DSO

• Motor Type - Stepper: -
• Motor Type - AC, DC: -
• Function: -
• Output Configuration: -
• Interface: -
• Technology: -
• Step Resolution: -
• Applications: -
• Current - Output: -
• Voltage - Supply: -
• Voltage - Load: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

TC299TX128F300SBCKXUMA1

Infineon Technologies

IC MCU 32BIT 8MB FLASH 516LFBGA

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

F3L600R10W3S7B11BPSA1

Infineon Technologies

LOW POWER EASY

• IGBT Type: -
• Configuration: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: -
• NTC Thermistor: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

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IPB067N08N3GATMA1

Infineon Technologies

MOSFET N-CH 80V 80A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80 V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 73µA
• Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 40 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 136W (Tc)
• Rds On (Max) @ Id, Vgs: 6.7mOhm @ 73A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -

IPF009N04NF2SATMA1

Infineon Technologies

TRENCH <= 40V

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 302A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.4V @ 249µA
• Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 20 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
• Rds On (Max) @ Id, Vgs: 0.9mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-7-U02
• Package / Case: TO-263-7, D2PAK (6 Leads + Tab)

패키지: -

TT820N16KOFHPSA1

Infineon Technologies

THYR / DIODE MODULE DK

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 1.6 kV
• Current - On State (It (AV)) (Max): 820 A
• Current - On State (It (RMS)) (Max): 1050 A
• Voltage - Gate Trigger (Vgt) (Max): 2 V
• Current - Gate Trigger (Igt) (Max): 250 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 24800A @ 50Hz
• Current - Hold (Ih) (Max): 300 mA
• Operating Temperature: 135°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module

패키지: -

CY8CTMA340-LQI-01T

Infineon Technologies

IC TRUETOUCH CAPSENSE 36QFN

• Applications: -
• Core Processor: -
• Program Memory Type: -
• Controller Series: -
• RAM Size: -
• Interface: -
• Number of I/O: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

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CY8C4127AZE-S455T

Infineon Technologies

IC MCU 32BIT 128KB FLASH 64TQFP

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 24MHz
• Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
• Number of I/O: 54
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x10b, 20x12b SAR
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-TQFP (10x10)

패키지: -

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CY14B101LA-SP25XIT

Infineon Technologies

IC NVSRAM 1MBIT PARALLEL 48SSOP

• Memory Type: Non-Volatile
• Memory Format: NVSRAM
• Technology: NVSRAM (Non-Volatile SRAM)
• Memory Size: 1Mbit
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 25ns
• Access Time: 25 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-BSSOP (0.295", 7.50mm Width)
• Supplier Device Package: 48-SSOP

패키지: -

IPT020N13NM6ATMA1

Infineon Technologies

TRENCH >=100V

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

패키지: -

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CY8C4147AZS-S548

Infineon Technologies

PSOC4 - GENERAL

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, POR, PWM, WDT
• Number of I/O: 84
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x14)

패키지: -

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