Infineon Technologies 제품

IRG7CH42UEF

Infineon Technologies

IGBT 1200V ULTRA FAST DIE

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 5A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 157nC
• Td (on/off) @ 25°C: 25ns/229ns
• Test Condition: 600V, 30A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

패키지: Die

SKW25N120FKSA1

Infineon Technologies

IGBT 1200V 46A 313W TO247-3

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 46A
• Current - Collector Pulsed (Icm): 84A
• Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 25A
• Power - Max: 313W
• Switching Energy: 3.7mJ
• Input Type: Standard
• Gate Charge: 225nC
• Td (on/off) @ 25°C: 45ns/730ns
• Test Condition: 800V, 25A, 22 Ohm, 15V
• Reverse Recovery Time (trr): 90ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

패키지: TO-247-3

BUZ73LHXKSA1

Infineon Technologies

MOSFET N-CH 200V 7A TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 40W (Tc)
• Rds On (Max) @ Id, Vgs: 400 mOhm @ 3.5A, 5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO-220-3
• Package / Case: TO-220-3

패키지: TO-220-3

IPP60R600CPXKSA1

Infineon Technologies

MOSFET N-CH 600V 6.1A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 220µA
• Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 60W (Tc)
• Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO-220-3
• Package / Case: TO-220-3

패키지: TO-220-3

SPB47N10

Infineon Technologies

MOSFET N-CH 100V 47A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 2mA
• Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 175W (Tc)
• Rds On (Max) @ Id, Vgs: 33 mOhm @ 33A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3-2
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF9Z34NL

Infineon Technologies

MOSFET P-CH 55V 19A TO-262

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
• Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

패키지: TO-262-3 Long Leads, I2Pak, TO-262AA

IRFIZ34E

Infineon Technologies

MOSFET N-CH 60V 21A TO220FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 37W (Tc)
• Rds On (Max) @ Id, Vgs: 42 mOhm @ 11A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB Full-Pak
• Package / Case: TO-220-3 Full Pack

패키지: TO-220-3 Full Pack

IPI072N10N3GXKSA1

Infineon Technologies

MOSFET N-CH 100V 80A TO262-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 90µA
• Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4910pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 150W (Tc)
• Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 80A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO262-3
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

패키지: TO-262-3 Long Leads, I2Pak, TO-262AA

BSC320N20NS3 G

Infineon Technologies

MOSFET N-CH 200V 36A TDSON-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 90µA
• Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 32 mOhm @ 36A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8
• Package / Case: 8-PowerTDFN

패키지: 8-PowerTDFN

BFN38H6327XTSA1

Infineon Technologies

TRANS NPN 300V 0.2A SOT223

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 300V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
• Power - Max: 1.5W
• Frequency - Transition: 70MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: PG-SOT223-4

패키지: TO-261-4, TO-261AA

AUIR3313STRL

Infineon Technologies

IC DVR CURR SENSE PROG D2PAK-5

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 6 V ~ 32 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 23A
• Rds On (Typ): 5.5 mOhm
• Input Type: Non-Inverting
• Features: -
• Fault Protection: Current Limiting (Adjustable), Over Temperature
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
• Supplier Device Package: D2PAK

패키지: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB

BTM7742GXUMA1

Infineon Technologies

IC MOTOR DRIVER PAR 36DSO

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushed DC
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (2)
• Interface: Parallel
• Technology: Power MOSFET
• Step Resolution: -
• Applications: General Purpose
• Current - Output: 12A
• Voltage - Supply: 5.5 V ~ 28 V
• Voltage - Load: 5.5 V ~ 28 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 36-BSSOP (0.295", 7.50mm Width)
• Supplier Device Package: -

패키지: 36-BSSOP (0.295", 7.50mm Width)

TLE8457ASJXUMA1

Infineon Technologies

IC LIN TRANSCEIVER DSO-8

• Type: Transceiver
• Protocol: LIN
• Number of Drivers/Receivers: 1/1
• Duplex: -
• Receiver Hysteresis: 175mV
• Data Rate: -
• Voltage - Supply: 5V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

C167CRLMHABXUMA2

Infineon Technologies

IC MCU 16BIT ROMLESS 144MQFP

• Core Processor: C166
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: CAN, EBI/EMI, SPI, UART/USART
• Peripherals: POR, PWM, WDT
• Number of I/O: 111
• Program Memory Size: -
• Program Memory Type: ROMless
• EEPROM Size: -
• RAM Size: 4K x 8
• Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 16x10b
• Oscillator Type: External
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: -
• Package / Case: 144-BQFP
• Supplier Device Package: PG-MQFP-144

패키지: 144-BQFP

SLE66R35RNBX1SA1

Infineon Technologies

IC SECURITY CHIP CARD CTLR

• Applications: Security
• Core Processor: -
• Program Memory Type: -
• Controller Series: -
• RAM Size: -
• Interface: ISO14443-3 Type A
• Number of I/O: -
• Voltage - Supply: -
• Operating Temperature: -25°C ~ 70°C
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

BGA751L7E6327XTSA1

Infineon Technologies

IC AMP MMIC SGL-BAND LN TSLP7-1

• Frequency: 800MHz, 900MHz
• P1dB: -5dBm (0.3mW)
• Gain: 15.8dB
• Noise Figure: 1.05dB
• RF Type: UMTS
• Voltage - Supply: 2.6 V ~ 3 V
• Current - Supply: 3.3mA
• Test Frequency: 800MHz
• Package / Case: 6-XFDFN Exposed Pad
• Supplier Device Package: TSLP-7-1

패키지: 6-XFDFN Exposed Pad

TLE9251SJXUMA1

Infineon Technologies

IC TRANSCEIVER 1/1 DSO-8

• Type: Transceiver
• Protocol: CAN
• Number of Drivers/Receivers: 1/1
• Duplex: -
• Receiver Hysteresis: 30mV
• Data Rate: 5Mbps
• Voltage - Supply: 4.5V ~ 5.5V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8

패키지: 8-SOIC (0.154", 3.90mm Width)

FP75R12N2T7BPSA1

Infineon Technologies

LOW POWER ECONO AG-ECONO2B-711

• IGBT Type: Trench Field Stop
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 75 A
• Power - Max: 20 mW
• Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 75A
• Current - Collector Cutoff (Max): 14 µA
• Input Capacitance (Cies) @ Vce: 15.1 nF @ 25 V
• Input: Three Phase Bridge Rectifier
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-ECONO2B

패키지: -

FF2MR12KM1HOSA1

Infineon Technologies

SIC 2N-CH 1200V 500A AG-62MM

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
• Rds On (Max) @ Id, Vgs: 2.13mOhm @ 500A, 15V
• Vgs(th) (Max) @ Id: 5.15V @ 224mA
• Gate Charge (Qg) (Max) @ Vgs: 1340nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 39700pF @ 800V
• Power - Max: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-62MM

패키지: -

DHP1140N08P5AUMA1

Infineon Technologies

INT. POWERSTAGE/DRIVER PG-IQFN-2

• Driven Configuration: -
• Channel Type: -
• Number of Drivers: -
• Gate Type: -
• Voltage - Supply: -
• Logic Voltage - VIL, VIH: -
• Current - Peak Output (Source, Sink): -
• Input Type: -
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

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CYT2B64BADQ0AZEGS

Infineon Technologies

IC MCU 32BIT 576KB FLASH 80LQFP

• Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
• Core Size: 32-Bit Dual-Core
• Speed: 80MHz
• Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, DMA, LVD, PWM, WDT
• Number of I/O: 59
• Program Memory Size: 576KB (576K x 8)
• Program Memory Type: FLASH
• EEPROM Size: 64K x 8
• RAM Size: 64K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 28x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 80-LQFP
• Supplier Device Package: 80-LQFP (12x12)

패키지: -

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IMDQ75R016M1HXUMA1

Infineon Technologies

SILICON CARBIDE MOSFET

• FET Type: N-Channel
• Technology: SiC (Silicon Carbide Junction Transistor)
• Drain to Source Voltage (Vdss): 750 V
• Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
• Vgs(th) (Max) @ Id: 5.6V @ 14.9mA
• Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds: 2869 pF @ 500 V
• Vgs (Max): +23V, -5V
• FET Feature: -
• Power Dissipation (Max): 384W (Tc)
• Rds On (Max) @ Id, Vgs: 15mOhm @ 41.5A, 20A
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-HDSOP-22-1
• Package / Case: 22-PowerBSOP Module

패키지: -

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FF150R12YT3BOMA1

Infineon Technologies

IGBT MOD 1200V 200A 625W

• IGBT Type: -
• Configuration: 2 Independent
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 200 A
• Power - Max: 625 W
• Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
• Current - Collector Cutoff (Max): 1 mA
• Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

패키지: -

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IR3899AMTRPBFXUMA1

Infineon Technologies

IFX POL, PG-IQFN-24

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 4.5V
• Voltage - Input (Max): 17V
• Voltage - Output (Min/Fixed): 0.6V
• Voltage - Output (Max): 6V
• Current - Output: 9A
• Frequency - Switching: 600kHz ~ 2MHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 19-PowerVFQFN
• Supplier Device Package: PG-IQFN-19-900

패키지: -

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S25FS064SDSMFB013

Infineon Technologies

IC FLASH 64MBIT SPI/QUAD 8SOIC

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 64Mbit
• Memory Interface: SPI - Quad I/O, QPI
• Clock Frequency: 80 MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.7V ~ 2V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.209", 5.30mm Width)
• Supplier Device Package: 8-SOIC

패키지: -

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CY8C4125LQS-S413T

Infineon Technologies

PSOC4 - GENERAL

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 24MHz
• Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
• Number of I/O: 34
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 4K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 40-UFQFN Exposed Pad
• Supplier Device Package: 40-QFN (6x6)

패키지: -

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D2000U65X122XPSA1

Infineon Technologies

HIGH POWER THYR / DIO

• Structure: -
• Number of SCRs, Diodes: -
• Voltage - Off State: -
• Current - On State (It (AV)) (Max): -
• Current - On State (It (RMS)) (Max): -
• Voltage - Gate Trigger (Vgt) (Max): -
• Current - Gate Trigger (Igt) (Max): -
• Current - Non Rep. Surge 50, 60Hz (Itsm): -
• Current - Hold (Ih) (Max): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -

패키지: -

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IRFC9130NB

Infineon Technologies

MOSFET 100V 14A DIE

• FET Type: -
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 14A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 200mOhm @ 14A, 10V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: Die
• Package / Case: Die

패키지: -

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