Infineon Technologies 제품

IRGSL14C40LPBF

Infineon Technologies

IGBT 430V 20A 125W TO262AA

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 430V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.75V @ 5V, 14A
• Power - Max: 125W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: 27nC
• Td (on/off) @ 25°C: 900ns/6µs
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
• Supplier Device Package: TO-262

패키지: TO-262-3 Long Leads, I2Pak, TO-262AA

IRF9Z24NSPBF

Infineon Technologies

MOSFET P-CH 55V 12A D2PAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
• Rds On (Max) @ Id, Vgs: 175 mOhm @ 7.2A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SPA20N60CFDXKSA1

Infineon Technologies

MOSFET N-CH 600V 20.7A TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 35W (Tc)
• Rds On (Max) @ Id, Vgs: 220 mOhm @ 13.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-FP
• Package / Case: TO-220-3 Full Pack

패키지: TO-220-3 Full Pack

IRF1404ZSTRLPBF

Infineon Technologies

MOSFET N-CH 40V 75A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 150µA
• Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 200W (Tc)
• Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 75A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPZ60R040C7XKSA1

Infineon Technologies

MOSFET N-CH 600V 50A TO247-4

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1.24mA
• Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 400V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 227W (Tc)
• Rds On (Max) @ Id, Vgs: 40 mOhm @ 24.9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO247-4
• Package / Case: TO-247-4

패키지: TO-247-4

PTFA210701EV4XWSA1

Infineon Technologies

IC FET RF LDMOS 70W H-36265-2

• Transistor Type: LDMOS
• Frequency: 2.14GHz
• Gain: 16.5dB
• Voltage - Test: 30V
• Current Rating: 10µA
• Noise Figure: -
• Current - Test: 550mA
• Power - Output: 18W
• Voltage - Rated: 65V
• Package / Case: 2-Flatpack, Fin Leads
• Supplier Device Package: H-36265-2

패키지: 2-Flatpack, Fin Leads

IDH10G65C6XKSA1

Infineon Technologies

SIC DIODES

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

패키지: -

BTS141BKSA1

Infineon Technologies

IC LOW SIDE PWR SWITCH TO220-3

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 60V (Max)
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 12A
• Rds On (Typ): 25 mOhm
• Input Type: -
• Features: -
• Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-220-3
• Supplier Device Package: PG-TO220-3-1

패키지: TO-220-3

TLE8102SG

Infineon Technologies

IC SWITCH LOSIDE 2CH DSO-12

• Switch Type: General Purpose
• Number of Outputs: 2
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: SPI
• Voltage - Load: 4.5 V ~ 5.5 V
• Voltage - Supply (Vcc/Vdd): -
• Current - Output (Max): -
• Rds On (Typ): 180 mOhm
• Input Type: -
• Features: -
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
• Supplier Device Package: PG-DSO-12-11

패키지: 12-BSOP (0.295", 7.50mm Width) Exposed Pad

TDA4862GGEGXUMA2

Infineon Technologies

IC PFC CONTROLLER DCM 8DSO

• Mode: Discontinuous Conduction (DCM)
• Frequency - Switching: -
• Current - Startup: -
• Voltage - Supply: 11 V ~ 19 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8-1

패키지: 8-SOIC (0.154", 3.90mm Width)

2EDL05N06PFXUMA1

Infineon Technologies

IC DRIVER GATE HALF BRIDGE 8DSO

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel, P-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 1.1V, 1.7V
• Current - Peak Output (Source, Sink): -
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 48ns, 24ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-DSO

패키지: 8-SOIC (0.154", 3.90mm Width)

SAB 82525 H V2.2

Infineon Technologies

IC CONTROLLER HSCX MQFP-44

• Applications: -
• Interface: Serial
• Voltage - Supply: 4.75 V ~ 5.25 V
• Package / Case: 44-QFP
• Supplier Device Package: P-MQFP-44
• Mounting Type: Surface Mount

패키지: 44-QFP

TLE4998C4HALA1

Infineon Technologies

SENSOR LINEAR PWM SSO3

• Type: Linear
• Technology: Hall Effect
• Axis: Single
• Output Type: PWM
• Sensing Range: ±50mT, ±100mT, ±200mT
• Voltage - Supply: 4.5 V ~ 5.5 V
• Current - Supply (Max): 8mA
• Current - Output (Max): 5mA
• Resolution: 16 b
• Bandwidth: Programmable
• Operating Temperature: -40°C ~ 125°C (TJ)
• Features: Selectable Scale, Temperature Compensated
• Package / Case: 3-SIP, SSO-3-10
• Supplier Device Package: SSO-3

패키지: 3-SIP, SSO-3-10

BFP460 BOARD

Infineon Technologies

BOARD APPLICATION W/BFP460 LNA

• Type: Transistor
• Frequency: 0Hz ~ 22GHz
• For Use With/Related Products: BFP460
• Supplied Contents: Board

패키지: -

BGA 700L16 E6327

Infineon Technologies

IC AMP MMIC 3.5V 10MA TSLP-7

• Frequency: 500MHz ~ 6GHz
• P1dB: -20dBm
• Gain: 17.5dB
• Noise Figure: 0.95dB
• RF Type: GSM, DCS, PCS
• Voltage - Supply: 2.75V
• Current - Supply: -
• Test Frequency: 1.575GHz
• Package / Case: 6-XFDFN Exposed Pad
• Supplier Device Package: TSLP-7-1

패키지: 6-XFDFN Exposed Pad

EAN64171801

Infineon Technologies

INFINEON

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

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S70KL1282DPBHI020

Infineon Technologies

IC PSRAM 128MBIT PARALLEL 24FBGA

• Memory Type: Volatile
• Memory Format: PSRAM
• Technology: PSRAM (Pseudo SRAM)
• Memory Size: 128Mbit
• Memory Interface: HyperBus
• Clock Frequency: 166 MHz
• Write Cycle Time - Word, Page: 36ns
• Access Time: 36 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: PG-BGA-24-801

패키지: -

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CY9BF122LPMC1-GNE2

Infineon Technologies

IC MCU 32BIT 160KB FLASH 64LQFP

• Core Processor: ARM® Cortex®-M3
• Core Size: 32-Bit
• Speed: 72MHz
• Connectivity: CSIO, I2C, LINbus, UART/USART
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number of I/O: 50
• Program Memory Size: 160KB (160K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 23x12b SAR; D/A 2x10b
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-LQFP (10x10)

패키지: -

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CY8C4045AZQ-S413

Infineon Technologies

IC MCU 32BIT 32KB FLASH 48TQFP

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
• Number of I/O: 36
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 4K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x10b Sigma-Delta; D/A 2x7/8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-LQFP
• Supplier Device Package: 48-TQFP (7x7)

패키지: -

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IRF7331TRPBF-1

Infineon Technologies

MOSFET 2N-CH 20V 7A 8SOIC

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
• Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 16V
• Power - Max: 2W (Ta)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

패키지: -

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T1901N80TOHXPSA1

Infineon Technologies

SCR MODULE 8000V 3300A DO200AE

• Structure: Single
• Number of SCRs, Diodes: 1 SCR
• Voltage - Off State: 8 kV
• Current - On State (It (AV)) (Max): 2930 A
• Current - On State (It (RMS)) (Max): 3300 A
• Voltage - Gate Trigger (Vgt) (Max): 2.5 V
• Current - Gate Trigger (Igt) (Max): 350 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 67000A @ 50Hz
• Current - Hold (Ih) (Max): 350 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: TO-200AF

패키지: -

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FF900R12IP4DBOSA2

Infineon Technologies

IGBT MOD 1200V 900A 5100W

• IGBT Type: Trench Field Stop
• Configuration: 2 Independent
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 900 A
• Power - Max: 5100 W
• Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
• Current - Collector Cutoff (Max): 5 mA
• Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

패키지: -

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IRF7726TRPBFXTMA1

Infineon Technologies

MOSFET P-CH 30V 7A MICRO8

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2204 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.79W (Ta)
• Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Micro8™
• Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

패키지: -

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FD600R17KE3KB5NOSA1

Infineon Technologies

IGBT MODULE 1700V 4300W

• IGBT Type: -
• Configuration: Single Chopper
• Voltage - Collector Emitter Breakdown (Max): 1700 V
• Current - Collector (Ic) (Max): -
• Power - Max: 4300 W
• Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 600A
• Current - Collector Cutoff (Max): 5 mA
• Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

패키지: -

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TC389QP160F300SAELXUMA2

Infineon Technologies

IC MCU 32BIT 10MB FLASH 516FBGA

• Core Processor: TriCore™
• Core Size: 32-Bit 6-Core
• Speed: 300MHz
• Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
• Peripherals: DMA, LVDS, PWM, WDT
• Number of I/O: -
• Program Memory Size: 10MB (10M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 128K x 8
• RAM Size: 1.34M x 8
• Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
• Data Converters: -
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 150°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 516-FBGA
• Supplier Device Package: PG-FBGA-516-1

패키지: -

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IM393L6E3XKLA1

Infineon Technologies

POWER MODULE 600V 15A MDIP30

• Type: IGBT
• Configuration: 3 Phase Inverter
• Current: 15 A
• Voltage: 600 V
• Voltage - Isolation: 2000Vrms
• Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads

패키지: -

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CY15B116QN-40BKXA

Infineon Technologies

FRAM

• Memory Type: Non-Volatile
• Memory Format: FRAM
• Technology: FRAM (Ferroelectric RAM)
• Memory Size: 16Mbit
• Memory Interface: SPI
• Clock Frequency: 40 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 9 ns
• Voltage - Supply: 1.8V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-TBGA
• Supplier Device Package: 24-FBGA (6x8)

패키지: -

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FZ1200R45HL3S7BPSA1

Infineon Technologies

IHV IHM T XHP 3 3-6 5K AG-IHVB19

• IGBT Type: Trench Field Stop
• Configuration: Single Switch
• Voltage - Collector Emitter Breakdown (Max): 5900 V
• Current - Collector (Ic) (Max): 1200 A
• Power - Max: 2400000 W
• Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 1.2kA
• Current - Collector Cutoff (Max): 5 mA
• Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-IHVB190

패키지: -

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