Infineon Technologies 제품

IKP01N120H2XKSA1

Infineon Technologies

IGBT 1200V 3.2A 28W TO220-3

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 3.2A
• Current - Collector Pulsed (Icm): 3.5A
• Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 1A
• Power - Max: 28W
• Switching Energy: 140µJ
• Input Type: Standard
• Gate Charge: 8.6nC
• Td (on/off) @ 25°C: 13ns/370ns
• Test Condition: 800V, 1A, 241 Ohm, 15V
• Reverse Recovery Time (trr): 83ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: PG-TO220-3

패키지: TO-220-3

IRLR4343TRPBF

Infineon Technologies

MOSFET N-CH 55V 26A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 79W (Tc)
• Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

IRF7484PBF

Infineon Technologies

MOSFET N-CH 40V 14A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 7V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 100nC @ 7V
• Input Capacitance (Ciss) (Max) @ Vds: 3520pF @ 25V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 10 mOhm @ 14A, 7V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

패키지: 8-SOIC (0.154", 3.90mm Width)

IRLR3105PBF

Infineon Technologies

MOSFET N-CH 55V 25A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 57W (Tc)
• Rds On (Max) @ Id, Vgs: 37 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

AUIRFR120ZTRL

Infineon Technologies

MOSFET N-CH 100V 8.7A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 25µA
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 35W (Tc)
• Rds On (Max) @ Id, Vgs: 190 mOhm @ 5.2A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

IRF2804S-7PPBF

Infineon Technologies

MOSFET N-CH 40V 160A D2PAK-7

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6930pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 330W (Tc)
• Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 160A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK (7-Lead)
• Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

패키지: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

BSR802N L6327

Infineon Technologies

MOSFET N-CH 20V 3.7A SC-59

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
• Vgs(th) (Max) @ Id: 750mV @ 30µA
• Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 2.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1447pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 23 mOhm @ 3.7A, 2.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SC-59
• Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

BBY 51-02L E6327

Infineon Technologies

DIODE TUNING 7V 20MA TSLP-2

• Capacitance @ Vr, F: 3.7pF @ 4V, 1MHz
• Capacitance Ratio: 2.2
• Capacitance Ratio Condition: C1/C4
• Voltage - Peak Reverse (Max): 7V
• Diode Type: Single
• Q @ Vr, F: -
• Operating Temperature: -55°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-882
• Supplier Device Package: PG-TSLP-2

패키지: SOD-882

BAS7004WH6327XTSA1

Infineon Technologies

DIODE ARRAY SCHOTTKY 70V SOT323

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 70V
• Current - Average Rectified (Io) (per Diode): 70mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 100ps
• Current - Reverse Leakage @ Vr: 100nA @ 50V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323-3

패키지: SC-70, SOT-323

TLE7274G

Infineon Technologies

IC REG LINEAR 5V 300MA TO263-3

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 42V
• Voltage - Output (Min/Fixed): 5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.5V @ 200mA
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 25µA ~ 35µA
• PSRR: 60dB (100Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
• Supplier Device Package: PG-TO263-3-1

패키지: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

TLE7235E

Infineon Technologies

IC DRIVER SPI 8CH HS/LS 24-SSOP

• Switch Type: General Purpose
• Number of Outputs: 8
• Ratio - Input:Output: 1:8
• Output Configuration: High Side or Low Side
• Output Type: N-Channel
• Interface: SPI
• Voltage - Load: 9 V ~ 16 V
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Current - Output (Max): 175mA, 350mA
• Rds On (Typ): 900 mOhm, 1.6 Ohm
• Input Type: -
• Features: -
• Fault Protection: Open Load Detect, Over Temperature
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: PG-SSOP-24

패키지: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad

IR1152SPBF

Infineon Technologies

IC PFC ONE CYCLE CONTROL 8SOIC

• Mode: Continuous Conduction (CCM)
• Frequency - Switching: 66kHz
• Current - Startup: 26µA
• Voltage - Supply: 14 V ~ 17 V
• Operating Temperature: -25°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

IR2156

Infineon Technologies

IC CNTL BALLAST 600V 0.5A 14-DIP

• Type: Ballast Controller
• Frequency: 36kHz ~ 44kHz
• Voltage - Supply: 10.5 V ~ 16.5 V
• Current - Supply: 10mA
• Current - Output Source/Sink: -
• Dimming: No
• Operating Temperature: -25°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: 14-DIP (0.300", 7.62mm)
• Supplier Device Package: 14-DIP

패키지: 14-DIP (0.300", 7.62mm)

IRS2181SPBF

Infineon Technologies

IC DRIVER HI/LO SIDE 600V 8-SOIC

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.5V
• Current - Peak Output (Source, Sink): 1.9A, 2.3A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 40ns, 20ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

TC214L8F133FABKXUMA1

Infineon Technologies

IC MCU 32BIT 512KB FLASH 144TQFP

• Core Processor: TriCore?
• Core Size: 32-Bit
• Speed: 133MHz
• Connectivity: CAN, LIN, QSPI
• Peripherals: DMA, WDT
• Number of I/O: 120
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• EEPROM Size: 64K x 8
• RAM Size: 56K x 8
• Voltage - Supply (Vcc/Vdd): 3.3V
• Data Converters: A/D 24x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

TLE49614MXTMA1

Infineon Technologies

IC HALL EFFECT LATCH SOT23-3

• Function: -
• Technology: -
• Polarization: -
• Sensing Range: -
• Test Condition: -
• Voltage - Supply: -
• Current - Supply (Max): -
• Current - Output (Max): -
• Output Type: -
• Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

PVT412AS-TPBF

Infineon Technologies

IC RELAY PHOTOVO 400V 6-SMD

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 6 Ohm
• Load Current: 240mA
• Voltage - Input: 1.2VDC
• Voltage - Load: 0 ~ 400 V
• Mounting Type: Surface Mount
• Termination Style: Gull Wing
• Package / Case: 6-SMD (0.300", 7.62mm)
• Supplier Device Package: 6-SMT
• Relay Type: Relay

패키지: 6-SMD (0.300", 7.62mm)

CHL8325A-34CRT

Infineon Technologies

IC REG BUCK 40VQFN

• Output Type: -
• Function: -
• Output Configuration: -
• Topology: -
• Number of Outputs: -
• Output Phases: -
• Voltage - Supply (Vcc/Vdd): -
• Frequency - Switching: -
• Duty Cycle (Max): -
• Synchronous Rectifier: -
• Clock Sync: -
• Serial Interfaces: -
• Control Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

BSM35GP120BPSA1

Infineon Technologies

LOW POWER ECONO AG-ECONO2C-211

• IGBT Type: -
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 45 A
• Power - Max: 230 W
• Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 17.5A
• Current - Collector Cutoff (Max): 500 µA
• Input Capacitance (Cies) @ Vce: 1.5 nF @ 25 V
• Input: Three Phase Bridge Rectifier
• NTC Thermistor: Yes
• Operating Temperature: 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-ECONO2B

패키지: -

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CY8C4147LQE-S473T

Infineon Technologies

IC MCU 32BIT 128KB FLASH 40QFN

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 24MHz
• Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, WDT
• Number of I/O: 34
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x10b, 20x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount, Wettable Flank
• Package / Case: 40-UFQFN Exposed Pad
• Supplier Device Package: 40-QFN (6x6)

패키지: -

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TDM3883XUMA1

Infineon Technologies

IC REG BUCK ADJ 4A LGA-15-1

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 4.7V
• Voltage - Input (Max): 14V
• Voltage - Output (Min/Fixed): 0.5V
• Voltage - Output (Max): 5V
• Current - Output: 4A
• Frequency - Switching: 600kHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 15-FLGA
• Supplier Device Package: PG-LGA-15-1

패키지: -

DD500S33HE3BOSA1

Infineon Technologies

DIODE MOD GP 3300V AGIHVB130-3

• Diode Configuration: 2 Independent
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 3300 V
• Current - Average Rectified (Io) (per Diode): 500A (DC)
• Voltage - Forward (Vf) (Max) @ If: 3.85 V @ 500 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-IHVB130-3

패키지: -

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ICE3B3065P

Infineon Technologies

IC OFFLINE SWITCH

• Output Isolation: -
• Internal Switch(s): -
• Voltage - Breakdown: -
• Topology: -
• Voltage - Start Up: -
• Voltage - Supply (Vcc/Vdd): -
• Duty Cycle: -
• Frequency - Switching: -
• Power (Watts): -
• Fault Protection: -
• Control Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -
• Mounting Type: -

패키지: -

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FP75R17N3E4PB87BPSA1

Infineon Technologies

LOW POWER ECONO

• IGBT Type: Trench Field Stop
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 1700 V
• Current - Collector (Ic) (Max): 150 A
• Power - Max: 555 W
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
• Current - Collector Cutoff (Max): 1 mA
• Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V
• Input: Three Phase Bridge Rectifier
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-ECONO3

패키지: -

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TC277T64F200NDCKXUMA2

Infineon Technologies

IC MCU 32BIT 4MB FLASH 292LFBGA

• Core Processor: TriCore™
• Core Size: 32-Bit Tri-Core
• Speed: 200MHz
• Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
• Peripherals: DMA, POR, WDT
• Number of I/O: 169
• Program Memory Size: 4MB (4M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 64K x 8
• RAM Size: 472K x 8
• Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
• Data Converters: A/D 60x12b SAR, Sigma-Delta
• Oscillator Type: External
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 292-LFBGA
• Supplier Device Package: PG-LFBGA-292-6

패키지: -

BSS169IXTSA1

Infineon Technologies

MOSFET N-CH 100V 190MA SOT23-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
• Vgs(th) (Max) @ Id: 1.8V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 7 V
• Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: Depletion Mode
• Power Dissipation (Max): 360mW (Ta)
• Rds On (Max) @ Id, Vgs: 2.9Ohm @ 190mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT-23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: -

S6J334CJEESE20000

Infineon Technologies

TRAVEO-40NM

• Core Processor: ARM® Cortex®-R5F
• Core Size: 32-Bit
• Speed: 240MHz
• Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
• Peripherals: DMA, I2S, LVD, POR, PWM, WDT
• Number of I/O: 150
• Program Memory Size: 2.0625MB (2.0625M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 112K x 8
• RAM Size: 544K x 8
• Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
• Data Converters: A/D 48x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 176-LQFP Exposed Pad
• Supplier Device Package: 176-TEQFP (24x24)

패키지: -

CYAT81652-64AS48T

Infineon Technologies

PSOC BASED - TRUETOUCH

• Touchscreen: 2 Wire Capacitive
• Resolution (Bits): -
• Interface: I2C, SPI
• Voltage Reference: -
• Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
• Current - Supply: -
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x14)

패키지: -

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