페이지 431 - Infineon Technologies 제품

부품 번호	제조업체	설명	패키지	재고
IRF6797MTR1PBF	Infineon Technologies	MOSFET N-CH 25V 36A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 210A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5790pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 38A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MX Package / Case: DirectFET? Isometric MX	패키지: DirectFET? Isometric MX	재고6,624
IRL3303LPBF	Infineon Technologies	MOSFET N-CH 30V 38A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 68W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	패키지: TO-262-3 Long Leads, I2Pak, TO-262AA	재고46,200
IRF7492	Infineon Technologies	MOSFET N-CH 200V 3.7A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 79 mOhm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	패키지: 8-SOIC (0.154", 3.90mm Width)	재고89,760
IRLR3410TRR	Infineon Technologies	MOSFET N-CH 100V 17A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 105 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고4,352
IRFL4105TR	Infineon Technologies	MOSFET N-CH 55V 3.7A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	패키지: TO-261-4, TO-261AA	재고159,540
IPD12CN10NGATMA1	Infineon Technologies	MOSFET N-CH 100V 67A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 83µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4320pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 12.4 mOhm @ 67A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고3,296
BSL207NL6327HTSA1	Infineon Technologies	MOSFET 2N-CH 20V 2.1A 6TSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.1A Rds On (Max) @ Id, Vgs: 70 mOhm @ 2.1A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 11µA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: PG-TSOP6-6	패키지: SOT-23-6 Thin, TSOT-23-6	재고5,728
IPG15N06S3L-45	Infineon Technologies	MOSFET 2N-CH 55V 15A TDSON-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 45 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.2V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1420pF @ 25V Power - Max: 21W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	패키지: 8-PowerVDFN	재고3,920
IR3447MTR1PBF	Infineon Technologies	IC REG BUCK ADJ 25A SYNC PQFN Function: Step-Down Output Configuration: Positive Topology: Buck Output Type: Adjustable Number of Outputs: 1 Voltage - Input (Min): 5V Voltage - Input (Max): 21V Voltage - Output (Min/Fixed): 0.6V Voltage - Output (Max): 18.06V Current - Output: 25A Frequency - Switching: 300kHz ~ 1.5MHz Synchronous Rectifier: Yes Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 33-PowerVQFN Supplier Device Package: PQFN (5x6)	패키지: 33-PowerVQFN	재고13,020
IFX91041EJV33XUMA1	Infineon Technologies	IC REG BUCK 3.3V 1.8A DS08-27 Function: Step-Down Output Configuration: Positive Topology: Buck Output Type: Fixed Number of Outputs: 1 Voltage - Input (Min): 4.75V Voltage - Input (Max): 45V Voltage - Output (Min/Fixed): 3.3V Voltage - Output (Max): - Current - Output: 1.8A Frequency - Switching: 370kHz Synchronous Rectifier: No Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: PG-DSO-8-27	패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad	재고6,848
IR11682SPBF	Infineon Technologies	IC SECONDARY SIDE CTRLR 8SOIC Applications: Secondary-Side Controller, Synchronous Rectifier Voltage - Input: - Voltage - Supply: 8.6 V ~ 18 V Current - Supply: 48mA Operating Temperature: -25°C ~ 125°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고4,624
IR21362PBF	Infineon Technologies	IC DRIVER BRIDGE 3-PHASE 28-DIP Driven Configuration: Half-Bridge Channel Type: 3-Phase Number of Drivers: 6 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 11.5 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 200mA, 350mA Input Type: Inverting, Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 125ns, 50ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 28-DIP (0.600", 15.24mm) Supplier Device Package: 28-DIP	패키지: 28-DIP (0.600", 15.24mm)	재고96,132
IR2153	Infineon Technologies	IC DRVR HALF BRDG SELF-OSC 8-DIP Driven Configuration: Half-Bridge Channel Type: Synchronous Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 10 V ~ 15.6 V Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): - Input Type: RC Input Circuit High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 80ns, 40ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP	패키지: 8-DIP (0.300", 7.62mm)	재고373,632
AUIRS21814STR	Infineon Technologies	IC DRIVER HIGH/LOW SIDE 14SOIC Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 1.9A, 2.3A Input Type: Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 15ns, 15ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SOIC	패키지: 14-SOIC (0.154", 3.90mm Width)	재고4,032
XC886LM8FFA5VACLXUMA1	Infineon Technologies	IC MCU 8BIT 32KB FLASH 48TQFP Core Processor: XC800 Core Size: 8-Bit Speed: 24MHz Connectivity: LIN, SSI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Number of I/O: 34 Program Memory Size: 32KB (32K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 1.75K x 8 Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V Data Converters: A/D 8x10b Oscillator Type: Internal Operating Temperature: -40°C ~ 150°C (TA) Mounting Type: - Package / Case: 48-TQFP Supplier Device Package: 48-TQFP (7x7)	패키지: 48-TQFP	재고7,040
TLE6232GPAUMA2	Infineon Technologies	IC SW SMART 6-CH LOWSIDE PDSO36 Switch Type: General Purpose Number of Outputs: 6 Ratio - Input:Output: 1:1 Output Configuration: Low Side Output Type: N-Channel Interface: SPI Voltage - Load: 4.5 V ~ 5.5 V Voltage - Supply (Vcc/Vdd): - Current - Output (Max): 550mA, 1.1A Rds On (Typ): 250 mOhm, 450 mOhm Input Type: - Features: Status Flag Fault Protection: Open Load Detect, Over Temperature, Over Voltage Operating Temperature: -40°C ~ 150°C (TJ) Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad Supplier Device Package: PG-DSO-36	패키지: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad	재고5,840
SIPC69SN60C3X3SA1	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote
IPW50R280CEFKSA1	Infineon Technologies	MOSFET N-CH 500V 13A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Vgs(th) (Max) @ Id: 3.5V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 92W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-1 Package / Case: TO-247-3	패키지: -	Request a Quote
CY9AF141NBBGL-GK9E1	Infineon Technologies	IC MCU 32BIT 64KB FLASH 112BGA Core Processor: ARM® Cortex®-M3 Core Size: 32-Bit Single-Core Speed: 40MHz Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART Peripherals: LVD, POR, PWM, WDT Number of I/O: 83 Program Memory Size: 64KB (64K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Data Converters: A/D 24x12b Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 112-LFBGA Supplier Device Package: 112-PFBGA (10x10)	패키지: -	Request a Quote
BSF024N03LT3G	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 106A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MG-WDSON-2 Package / Case: DirectFET™ Isometric MX	패키지: -	Request a Quote
IMIC41V07X6SA1	Infineon Technologies	CHIP BARE DIE Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote
CY8C6316BZI-BLF53T	Infineon Technologies	IC MCU 32BIT 512KB FLASH 116BGA Core Processor: ARM® Cortex®-M4F Core Size: 32-Bit Speed: 150MHz Connectivity: FIFO, I2C, IrDA, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, I2S, LCD, LVD, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT Number of I/O: 78 Program Memory Size: 512KB (512K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 128K x 8 Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7b, 1x8/12b Oscillator Type: External, Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 116-WFBGA Supplier Device Package: 116-BGA (5.2x6.4)	패키지: -	Request a Quote
8909007445	Infineon Technologies	INFINEON Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote
T940N14TOFXPSA1	Infineon Technologies	SCR MODULE 1800V 1759A DO200AB Structure: Single Number of SCRs, Diodes: 1 SCR Voltage - Off State: 1.8 kV Current - On State (It (AV)) (Max): 959 A Current - On State (It (RMS)) (Max): 1759 A Voltage - Gate Trigger (Vgt) (Max): 2.2 V Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 17500A @ 50Hz Current - Hold (Ih) (Max): 300 mA Operating Temperature: -40°C ~ 125°C Mounting Type: Clamp On Package / Case: DO-200AB, B-PUK	패키지: -	Request a Quote
IPB65R190CFD7AATMA1	Infineon Technologies	MOSFET N-CH 650V 14A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4.5V @ 320µA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 77W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	패키지: -	재고2,943
T420N14TOFXPSA1	Infineon Technologies	SCR MODULE 1800V 750A DO200AA Structure: Single Number of SCRs, Diodes: 1 SCR Voltage - Off State: 1.8 kV Current - On State (It (AV)) (Max): 424 A Current - On State (It (RMS)) (Max): 750 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - Gate Trigger (Igt) (Max): 200 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 7200A @ 50Hz Current - Hold (Ih) (Max): 300 mA Operating Temperature: -40°C ~ 125°C Mounting Type: Clamp On Package / Case: DO-200AA, A-PUK	패키지: -	Request a Quote
BC818-40WE6327	Infineon Technologies	BIPOLAR GEN PURPOSE TRANSISTOR Transistor Type: - Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 25 V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Power - Max: 500 mW Frequency - Transition: 170MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3-1	패키지: -	Request a Quote
CY8C614AAZI-S2F04	Infineon Technologies	IC MCU 32BIT 2MB FLASH 128TQFP Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F Core Size: 32-Bit Dual-Core Speed: 100MHz, 150MHz Connectivity: eMMC/SD/SDIO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT Number of I/O: 102 Program Memory Size: 2MB (2M x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 1M x 8 Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Data Converters: A/D 16x8 SAR, 16x10/12b Sigma-Delta; D/A 2x7/8b Oscillator Type: External, Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 128-LQFP Supplier Device Package: 128-TQFP (14x20)	패키지: -	Request a Quote

IRF6797MTR1PBF

Infineon Technologies

MOSFET N-CH 25V 36A DIRECTFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 210A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 5790pF @ 13V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 38A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DIRECTFET? MX
Package / Case: DirectFET? Isometric MX

패키지: DirectFET? Isometric MX

재고6,624

IRL3303LPBF

Infineon Technologies

MOSFET N-CH 30V 38A TO-262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-262
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

패키지: TO-262-3 Long Leads, I2Pak, TO-262AA

재고46,200

IRF7492

Infineon Technologies

MOSFET N-CH 200V 3.7A 8-SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 79 mOhm @ 2.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

패키지: 8-SOIC (0.154", 3.90mm Width)

재고89,760

IRLR3410TRR

Infineon Technologies

MOSFET N-CH 100V 17A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 105 mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고4,352

IRFL4105TR

Infineon Technologies

MOSFET N-CH 55V 3.7A SOT223

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA

패키지: TO-261-4, TO-261AA

재고159,540

IPD12CN10NGATMA1

Infineon Technologies

MOSFET N-CH 100V 67A TO252-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4320pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 12.4 mOhm @ 67A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고3,296

BSL207NL6327HTSA1

Infineon Technologies

MOSFET 2N-CH 20V 2.1A 6TSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 2.1A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: PG-TSOP6-6

패키지: SOT-23-6 Thin, TSOT-23-6

재고5,728

IPG15N06S3L-45

Infineon Technologies

MOSFET 2N-CH 55V 15A TDSON-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1420pF @ 25V
Power - Max: 21W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-4

패키지: 8-PowerVDFN

재고3,920

IR3447MTR1PBF

Infineon Technologies

IC REG BUCK ADJ 25A SYNC PQFN

Function: Step-Down
Output Configuration: Positive
Topology: Buck
Output Type: Adjustable
Number of Outputs: 1
Voltage - Input (Min): 5V
Voltage - Input (Max): 21V
Voltage - Output (Min/Fixed): 0.6V
Voltage - Output (Max): 18.06V
Current - Output: 25A
Frequency - Switching: 300kHz ~ 1.5MHz
Synchronous Rectifier: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 33-PowerVQFN
Supplier Device Package: PQFN (5x6)

패키지: 33-PowerVQFN

재고13,020

IFX91041EJV33XUMA1

Infineon Technologies

IC REG BUCK 3.3V 1.8A DS08-27

Function: Step-Down
Output Configuration: Positive
Topology: Buck
Output Type: Fixed
Number of Outputs: 1
Voltage - Input (Min): 4.75V
Voltage - Input (Max): 45V
Voltage - Output (Min/Fixed): 3.3V
Voltage - Output (Max): -
Current - Output: 1.8A
Frequency - Switching: 370kHz
Synchronous Rectifier: No
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package: PG-DSO-8-27

패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad

재고6,848

IR11682SPBF

Infineon Technologies

IC SECONDARY SIDE CTRLR 8SOIC

Applications: Secondary-Side Controller, Synchronous Rectifier
Voltage - Input: -
Voltage - Supply: 8.6 V ~ 18 V
Current - Supply: 48mA
Operating Temperature: -25°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고4,624

IR21362PBF

Infineon Technologies

IC DRIVER BRIDGE 3-PHASE 28-DIP

Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 11.5 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 125ns, 50ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 28-DIP (0.600", 15.24mm)
Supplier Device Package: 28-DIP

패키지: 28-DIP (0.600", 15.24mm)

재고96,132

IR2153

Infineon Technologies

IC DRVR HALF BRDG SELF-OSC 8-DIP

Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 10 V ~ 15.6 V
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): -
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 80ns, 40ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-DIP

패키지: 8-DIP (0.300", 7.62mm)

재고373,632

AUIRS21814STR

Infineon Technologies

IC DRIVER HIGH/LOW SIDE 14SOIC

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 15ns, 15ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 14-SOIC

패키지: 14-SOIC (0.154", 3.90mm Width)

재고4,032

XC886LM8FFA5VACLXUMA1

Infineon Technologies

IC MCU 8BIT 32KB FLASH 48TQFP

Core Processor: XC800
Core Size: 8-Bit
Speed: 24MHz
Connectivity: LIN, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Number of I/O: 34
Program Memory Size: 32KB (32K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 1.75K x 8
Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
Data Converters: A/D 8x10b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 150°C (TA)
Mounting Type: -
Package / Case: 48-TQFP
Supplier Device Package: 48-TQFP (7x7)

패키지: 48-TQFP

재고7,040

TLE6232GPAUMA2

Infineon Technologies

IC SW SMART 6-CH LOWSIDE PDSO36

Switch Type: General Purpose
Number of Outputs: 6
Ratio - Input:Output: 1:1
Output Configuration: Low Side
Output Type: N-Channel
Interface: SPI
Voltage - Load: 4.5 V ~ 5.5 V
Voltage - Supply (Vcc/Vdd): -
Current - Output (Max): 550mA, 1.1A
Rds On (Typ): 250 mOhm, 450 mOhm
Input Type: -
Features: Status Flag
Fault Protection: Open Load Detect, Over Temperature, Over Voltage
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Supplier Device Package: PG-DSO-36

패키지: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad

재고5,840

SIPC69SN60C3X3SA1

Infineon Technologies

N-CHANNEL POWER MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

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IPW50R280CEFKSA1

Infineon Technologies

MOSFET N-CH 500V 13A TO247-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 92W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-1
Package / Case: TO-247-3

패키지: -

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CY9AF141NBBGL-GK9E1

Infineon Technologies

IC MCU 32BIT 64KB FLASH 112BGA

Core Processor: ARM® Cortex®-M3
Core Size: 32-Bit Single-Core
Speed: 40MHz
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Number of I/O: 83
Program Memory Size: 64KB (64K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 16K x 8
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Data Converters: A/D 24x12b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 112-LFBGA
Supplier Device Package: 112-PFBGA (10x10)

패키지: -

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BSF024N03LT3G

Infineon Technologies

N-CHANNEL POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 106A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: MG-WDSON-2
Package / Case: DirectFET™ Isometric MX

패키지: -

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IMIC41V07X6SA1

Infineon Technologies

CHIP BARE DIE

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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CY8C6316BZI-BLF53T

Infineon Technologies

IC MCU 32BIT 512KB FLASH 116BGA

Core Processor: ARM® Cortex®-M4F
Core Size: 32-Bit
Speed: 150MHz
Connectivity: FIFO, I2C, IrDA, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, I2S, LCD, LVD, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
Number of I/O: 78
Program Memory Size: 512KB (512K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 128K x 8
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7b, 1x8/12b
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 116-WFBGA
Supplier Device Package: 116-BGA (5.2x6.4)

패키지: -

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8909007445

Infineon Technologies

INFINEON

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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T940N14TOFXPSA1

Infineon Technologies

SCR MODULE 1800V 1759A DO200AB

Structure: Single
Number of SCRs, Diodes: 1 SCR
Voltage - Off State: 1.8 kV
Current - On State (It (AV)) (Max): 959 A
Current - On State (It (RMS)) (Max): 1759 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17500A @ 50Hz
Current - Hold (Ih) (Max): 300 mA
Operating Temperature: -40°C ~ 125°C
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK

패키지: -

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IPB65R190CFD7AATMA1

Infineon Technologies

MOSFET N-CH 650V 14A TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 77W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -

재고2,943

T420N14TOFXPSA1

Infineon Technologies

SCR MODULE 1800V 750A DO200AA

Structure: Single
Number of SCRs, Diodes: 1 SCR
Voltage - Off State: 1.8 kV
Current - On State (It (AV)) (Max): 424 A
Current - On State (It (RMS)) (Max): 750 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7200A @ 50Hz
Current - Hold (Ih) (Max): 300 mA
Operating Temperature: -40°C ~ 125°C
Mounting Type: Clamp On
Package / Case: DO-200AA, A-PUK

패키지: -

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BC818-40WE6327

Infineon Technologies

BIPOLAR GEN PURPOSE TRANSISTOR

Transistor Type: -
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Power - Max: 500 mW
Frequency - Transition: 170MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3-1

패키지: -

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CY8C614AAZI-S2F04

Infineon Technologies

IC MCU 32BIT 2MB FLASH 128TQFP

Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Core Size: 32-Bit Dual-Core
Speed: 100MHz, 150MHz
Connectivity: eMMC/SD/SDIO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
Number of I/O: 102
Program Memory Size: 2MB (2M x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 1M x 8
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Data Converters: A/D 16x8 SAR, 16x10/12b Sigma-Delta; D/A 2x7/8b
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 128-LQFP
Supplier Device Package: 128-TQFP (14x20)

패키지: -

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