페이지 447 - Infineon Technologies 제품

부품 번호	제조업체	설명	패키지	재고
IHW30N90R	Infineon Technologies	IGBT 900V 60A 454W TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 900V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A Power - Max: 454W Switching Energy: 1.46mJ Input Type: Standard Gate Charge: 200nC Td (on/off) @ 25°C: -/511ns Test Condition: 600V, 30A, 15 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	패키지: TO-247-3	재고390,012
IRG4PC30UPBF	Infineon Technologies	IGBT 600V 23A 100W TO247AC IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 23A Current - Collector Pulsed (Icm): 92A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A Power - Max: 100W Switching Energy: 160µJ (on), 200µJ (off) Input Type: Standard Gate Charge: 50nC Td (on/off) @ 25°C: 17ns/78ns Test Condition: 480V, 12A, 23 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	패키지: TO-247-3	재고3,488
IRFP4228PBF	Infineon Technologies	MOSFET N-CH 150V 78A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 78A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4530pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 33A, 10V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	패키지: TO-247-3	재고69,036
BTS244Z E3043	Infineon Technologies	MOSFET N-CH 55V 35A TO220-5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 130µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2660pF @ 25V Vgs (Max): ±20V FET Feature: Temperature Sensing Diode Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 19A, 10V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: P-TO220-5 Package / Case: TO-220-5	패키지: TO-220-5	재고7,056
BTS110E3045ANTMA1	Infineon Technologies	MOSFET N-CH 100V 10A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 200 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-220AB Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고4,848
IPU07N03LA	Infineon Technologies	MOSFET N-CH 25V 30A TO-251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2653pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: P-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	패키지: TO-251-3 Short Leads, IPak, TO-251AA	재고2,480
IRLR3715TRL	Infineon Technologies	MOSFET N-CH 20V 54A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 71W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 26A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고163,536
IRF3709L	Infineon Technologies	MOSFET N-CH 30V 90A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2672pF @ 16V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 120W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	패키지: TO-262-3 Long Leads, I2Pak, TO-262AA	재고2,016
IRL3103D1	Infineon Technologies	MOSFET N-CH 30V 64A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 2W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 34A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	패키지: TO-220-3	재고6,608
IRFB7734PBF	Infineon Technologies	MOSFET N-CH 75V 183A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 183A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 290W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	패키지: TO-220-3	재고4,096
IPA50R380CEXKSA2	Infineon Technologies	MOSFET N-CH 500V 6.3A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Vgs(th) (Max) @ Id: 3.5V @ 260µA Gate Charge (Qg) (Max) @ Vgs: 24.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 29.2W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 3.2A, 13V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	패키지: TO-220-3 Full Pack	재고7,472
SPW11N80C3	Infineon Technologies	MOSFET N-CH 800V 11A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 680µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 7.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	패키지: TO-247-3	재고111,204
IPP052N06L3GXKSA1	Infineon Technologies	MOSFET N-CH 60V 80A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 58µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 115W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	패키지: TO-220-3	재고12,378
BCR 196L3 E6327	Infineon Technologies	TRANS PREBIAS PNP 250MW TSLP-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 150MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3	패키지: SC-101, SOT-883	재고5,584
BBY5802WE6127XT	Infineon Technologies	DIODE TUNING 10V 20MA SCD-80 Capacitance @ Vr, F: 5.5pF @ 6V, 1MHz Capacitance Ratio: 3.5 Capacitance Ratio Condition: C1/C4 Voltage - Peak Reverse (Max): 10V Diode Type: Single Q @ Vr, F: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-80 Supplier Device Package: PG-SCD80-2	패키지: SC-80	재고6,752
BAS16SH6727XTSA1	Infineon Technologies	DIODE ARRAY GP 80V 200MA SOT363 Diode Configuration: 3 Independent Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io) (per Diode): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 1µA @ 75V Operating Temperature - Junction: 150°C (Max) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	패키지: 6-VSSOP, SC-88, SOT-363	재고7,392
PEB 4265 V V1.2	Infineon Technologies	IC SLIC VOICE ACCESS VQFN-48 Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC) Interface: IOM-2, PCM Number of Circuits: 2 Voltage - Supply: 5V Current - Supply: 105mA Power (Watts): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Supplier Device Package: P-VQFN-48-4	패키지: 48-VFQFN Exposed Pad	재고2,112
XMC1201T028F0016ABXUMA1	Infineon Technologies	IC MCU 32BIT 16KB FLASH 28TSSOP Core Processor: ARM? Cortex?-M0 Core Size: 32-Bit Speed: 32MHz Connectivity: I2C, LIN, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Number of I/O: 20 Program Memory Size: 16KB (16K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V Data Converters: A/D 14x12b Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: 38-TFSOP (0.173", 4.40mm Width) Supplier Device Package: PG-TSSOP-38-9	패키지: 38-TFSOP (0.173", 4.40mm Width)	재고6,880
TLE4905GNTSA1	Infineon Technologies	MAGNETIC SWITCH UNIPOLAR SOT89-3 Function: Unipolar Switch Technology: Hall Effect Polarization: South Pole Sensing Range: 18mT Trip, 5mT Release Test Condition: 25°C Voltage - Supply: 4 V ~ 18 V Current - Supply (Max): 5mA Current - Output (Max): 100mA Output Type: Open Collector Features: Temperature Compensated Operating Temperature: -40°C ~ 125°C (TJ) Package / Case: TO-243AA Supplier Device Package: SOT-89-3	패키지: TO-243AA	재고4,590
TDA5103AHTMA1	Infineon Technologies	TRANSMITTER ASK/FSK P-TSSOP-10 Frequency: 345MHz Applications: Alarm Systems, Communication Systems Modulation or Protocol: ASK, FSK Data Rate (Max): 20 kbps Power - Output: 5dBm Current - Transmitting: 7mA Data Interface: PCB, Surface Mount Antenna Connector: PCB, Surface Mount Memory Size: - Features: - Voltage - Supply: 2.1 V ~ 4 V Operating Temperature: -25°C ~ 85°C Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)	패키지: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)	재고8,028
BTS442E2E3062ABUMA1	Infineon Technologies	IC HIGH SIDE PWR SWITCH TO263-5 Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: N-Channel Interface: On/Off Voltage - Load: 4.5 V ~ 42 V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 17A Rds On (Typ): 15 mOhm Input Type: Non-Inverting Features: Auto Restart, Status Flag Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Operating Temperature: -40°C ~ 150°C (TJ) Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB Supplier Device Package: PG-TO263-5-2	패키지: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB	재고4,064
BTS72002EPCXUMA1	Infineon Technologies	PROFET Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: N-Channel Interface: On/Off Voltage - Load: 6V ~ 18V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.2A Rds On (Typ): 66.5mOhm Input Type: Non-Inverting Features: - Fault Protection: Over Current, Over Voltage, Short Circuit, UVLO Operating Temperature: -40°C ~ 150°C (TJ) Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: PG-TSDSO-14-22	패키지: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad	재고22,986
IMBG65R009M1HXTMA1	Infineon Technologies	SILICON CARBIDE MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote
BSZ039N06NSATMA1	Infineon Technologies	MOSFET N-CH 60V 18A/40A TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.3V @ 36µA Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-FL Package / Case: 8-PowerTDFN	패키지: -	재고8,988
S29GL512S11GHB023	Infineon Technologies	IC FLASH 512MBIT CFI 56FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 512Mbit Memory Interface: CFI Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 110 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 56-VFBGA Supplier Device Package: 56-FBGA (9x7)	패키지: -	Request a Quote
FZ900R12KE4HOSA1	Infineon Technologies	IGBT MOD 1200V 900A 4300W IGBT Type: Trench Field Stop Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 900 A Power - Max: 4300 W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 900A Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 56 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	재고21
FS100R07N2E4BOSA1	Infineon Technologies	IGBT MOD 650V 100A 335W IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 100 A Power - Max: 335 W Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote
FS75R12W2T4BOMA1	Infineon Technologies	IGBT MOD 1200V 107A 375W IGBT Type: Trench Field Stop Configuration: Full Bridge Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 107 A Power - Max: 375 W Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	재고33

IHW30N90R

Infineon Technologies

IGBT 900V 60A 454W TO247-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 900V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 90A
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Power - Max: 454W
Switching Energy: 1.46mJ
Input Type: Standard
Gate Charge: 200nC
Td (on/off) @ 25°C: -/511ns
Test Condition: 600V, 30A, 15 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

패키지: TO-247-3

재고390,012

IRG4PC30UPBF

Infineon Technologies

IGBT 600V 23A 100W TO247AC

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 23A
Current - Collector Pulsed (Icm): 92A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Power - Max: 100W
Switching Energy: 160µJ (on), 200µJ (off)
Input Type: Standard
Gate Charge: 50nC
Td (on/off) @ 25°C: 17ns/78ns
Test Condition: 480V, 12A, 23 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC

패키지: TO-247-3

재고3,488

IRFP4228PBF

Infineon Technologies

MOSFET N-CH 150V 78A TO-247AC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4530pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 310W (Tc)
Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 33A, 10V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AC
Package / Case: TO-247-3

패키지: TO-247-3

재고69,036

BTS244Z E3043

Infineon Technologies

MOSFET N-CH 55V 35A TO220-5

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 130µA
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2660pF @ 25V
Vgs (Max): ±20V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 13 mOhm @ 19A, 10V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: P-TO220-5
Package / Case: TO-220-5

패키지: TO-220-5

재고7,056

BTS110E3045ANTMA1

Infineon Technologies

MOSFET N-CH 100V 10A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 200 mOhm @ 5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-220AB
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고4,848

IPU07N03LA

Infineon Technologies

MOSFET N-CH 25V 30A TO-251

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 2653pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: P-TO251-3
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

패키지: TO-251-3 Short Leads, IPak, TO-251AA

재고2,480

IRLR3715TRL

Infineon Technologies

MOSFET N-CH 20V 54A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
Rds On (Max) @ Id, Vgs: 14 mOhm @ 26A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고163,536

IRF3709L

Infineon Technologies

MOSFET N-CH 30V 90A TO-262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 2672pF @ 16V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-262
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

패키지: TO-262-3 Long Leads, I2Pak, TO-262AA

재고2,016

IRL3103D1

Infineon Technologies

MOSFET N-CH 30V 64A TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 2W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 14 mOhm @ 34A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

패키지: TO-220-3

재고6,608

IRFB7734PBF

Infineon Technologies

MOSFET N-CH 75V 183A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 183A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10150pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

패키지: TO-220-3

재고4,096

IPA50R380CEXKSA2

Infineon Technologies

MOSFET N-CH 500V 6.3A TO-220FP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs(th) (Max) @ Id: 3.5V @ 260µA
Gate Charge (Qg) (Max) @ Vgs: 24.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 29.2W (Tc)
Rds On (Max) @ Id, Vgs: 380 mOhm @ 3.2A, 13V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220 Full Pack
Package / Case: TO-220-3 Full Pack

패키지: TO-220-3 Full Pack

재고7,472

SPW11N80C3

Infineon Technologies

MOSFET N-CH 800V 11A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 680µA
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 450 mOhm @ 7.1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3
Package / Case: TO-247-3

패키지: TO-247-3

재고111,204

IPP052N06L3GXKSA1

Infineon Technologies

MOSFET N-CH 60V 80A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 58µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 30V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 5 mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO-220-3
Package / Case: TO-220-3

패키지: TO-220-3

재고12,378

BCR 196L3 E6327

Infineon Technologies

TRANS PREBIAS PNP 250MW TSLP-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 150MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: PG-TSLP-3

패키지: SC-101, SOT-883

재고5,584

BBY5802WE6127XT

Infineon Technologies

DIODE TUNING 10V 20MA SCD-80

Capacitance @ Vr, F: 5.5pF @ 6V, 1MHz
Capacitance Ratio: 3.5
Capacitance Ratio Condition: C1/C4
Voltage - Peak Reverse (Max): 10V
Diode Type: Single
Q @ Vr, F: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-80
Supplier Device Package: PG-SCD80-2

패키지: SC-80

재고6,752

BAS16SH6727XTSA1

Infineon Technologies

DIODE ARRAY GP 80V 200MA SOT363

Diode Configuration: 3 Independent
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 1µA @ 75V
Operating Temperature - Junction: 150°C (Max)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6

패키지: 6-VSSOP, SC-88, SOT-363

재고7,392

PEB 4265 V V1.2

Infineon Technologies

IC SLIC VOICE ACCESS VQFN-48

Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC)
Interface: IOM-2, PCM
Number of Circuits: 2
Voltage - Supply: 5V
Current - Supply: 105mA
Power (Watts): -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Supplier Device Package: P-VQFN-48-4

패키지: 48-VFQFN Exposed Pad

재고2,112

XMC1201T028F0016ABXUMA1

Infineon Technologies

IC MCU 32BIT 16KB FLASH 28TSSOP

Core Processor: ARM? Cortex?-M0
Core Size: 32-Bit
Speed: 32MHz
Connectivity: I2C, LIN, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Number of I/O: 20
Program Memory Size: 16KB (16K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 16K x 8
Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
Data Converters: A/D 14x12b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Supplier Device Package: PG-TSSOP-38-9

패키지: 38-TFSOP (0.173", 4.40mm Width)

재고6,880

TLE4905GNTSA1

Infineon Technologies

MAGNETIC SWITCH UNIPOLAR SOT89-3

Function: Unipolar Switch
Technology: Hall Effect
Polarization: South Pole
Sensing Range: 18mT Trip, 5mT Release
Test Condition: 25°C
Voltage - Supply: 4 V ~ 18 V
Current - Supply (Max): 5mA
Current - Output (Max): 100mA
Output Type: Open Collector
Features: Temperature Compensated
Operating Temperature: -40°C ~ 125°C (TJ)
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

패키지: TO-243AA

재고4,590

TDA5103AHTMA1

Infineon Technologies

TRANSMITTER ASK/FSK P-TSSOP-10

Frequency: 345MHz
Applications: Alarm Systems, Communication Systems
Modulation or Protocol: ASK, FSK
Data Rate (Max): 20 kbps
Power - Output: 5dBm
Current - Transmitting: 7mA
Data Interface: PCB, Surface Mount
Antenna Connector: PCB, Surface Mount
Memory Size: -
Features: -
Voltage - Supply: 2.1 V ~ 4 V
Operating Temperature: -25°C ~ 85°C
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)

패키지: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)

재고8,028

BTS442E2E3062ABUMA1

Infineon Technologies

IC HIGH SIDE PWR SWITCH TO263-5

Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 4.5 V ~ 42 V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 17A
Rds On (Typ): 15 mOhm
Input Type: Non-Inverting
Features: Auto Restart, Status Flag
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Supplier Device Package: PG-TO263-5-2

패키지: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB

재고4,064

BTS72002EPCXUMA1

Infineon Technologies

PROFET

Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Rds On (Typ): 66.5mOhm
Input Type: Non-Inverting
Features: -
Fault Protection: Over Current, Over Voltage, Short Circuit, UVLO
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package: PG-TSDSO-14-22

패키지: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad

재고22,986

IMBG65R009M1HXTMA1

Infineon Technologies

SILICON CARBIDE MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

Request a Quote

BSZ039N06NSATMA1

Infineon Technologies

MOSFET N-CH 60V 18A/40A TSDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.3V @ 36µA
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSDSON-8-FL
Package / Case: 8-PowerTDFN

패키지: -

재고8,988

S29GL512S11GHB023

Infineon Technologies

IC FLASH 512MBIT CFI 56FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 512Mbit
Memory Interface: CFI
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 110 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-VFBGA
Supplier Device Package: 56-FBGA (9x7)

패키지: -

Request a Quote

FZ900R12KE4HOSA1

Infineon Technologies

IGBT MOD 1200V 900A 4300W

IGBT Type: Trench Field Stop
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 900 A
Power - Max: 4300 W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 900A
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 56 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

재고21

FS100R07N2E4BOSA1

Infineon Technologies

IGBT MOD 650V 100A 335W

IGBT Type: Trench Field Stop
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 100 A
Power - Max: 335 W
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

Request a Quote

FS75R12W2T4BOMA1

Infineon Technologies

IGBT MOD 1200V 107A 375W

IGBT Type: Trench Field Stop
Configuration: Full Bridge
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 107 A
Power - Max: 375 W
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

재고33