Infineon Technologies 제품

IRG7T300SD12B

Infineon Technologies

MOD IGBT 1200V 300A POWIR 62

• IGBT Type: -
• Configuration: Single
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 600A
• Power - Max: 1800W
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 300A
• Current - Collector Cutoff (Max): 4mA
• Input Capacitance (Cies) @ Vce: 41.5nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: POWIR? 62 Module
• Supplier Device Package: POWIR? 62

패키지: POWIR? 62 Module

IRF6717MTR1PBF

Infineon Technologies

MOSFET N-CH 25V 38A DIRECTFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.35V @ 150µA
• Gate Charge (Qg) (Max) @ Vgs: 69nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 6750pF @ 13V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.8W (Ta), 96W (Tc)
• Rds On (Max) @ Id, Vgs: 1.25 mOhm @ 38A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DIRECTFET? MX
• Package / Case: DirectFET? Isometric MX

패키지: DirectFET? Isometric MX

BSL307SPT

Infineon Technologies

MOSFET P-CH 30V 5.5A 6-TSOP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 40µA
• Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta)
• Rds On (Max) @ Id, Vgs: 43 mOhm @ 5.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: P-TSOP6-6
• Package / Case: SOT-23-6 Thin, TSOT-23-6

패키지: SOT-23-6 Thin, TSOT-23-6

IRFR120ZTR

Infineon Technologies

MOSFET N-CH 100V 8.7A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 35W (Tc)
• Rds On (Max) @ Id, Vgs: 190 mOhm @ 5.2A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

IRF7704

Infineon Technologies

MOSFET P-CH 40V 4.6A 8-TSSOP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.5W (Ta)
• Rds On (Max) @ Id, Vgs: 46 mOhm @ 4.6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-TSSOP
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)

패키지: 8-TSSOP (0.173", 4.40mm Width)

IRFR4105TRR

Infineon Technologies

MOSFET N-CH 55V 27A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 68W (Tc)
• Rds On (Max) @ Id, Vgs: 45 mOhm @ 16A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

IRFR3709ZTRRPBF

Infineon Technologies

MOSFET N-CH 30V 86A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.25V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2330pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 79W (Tc)
• Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

IPD50R1K4CEAUMA1

Infineon Technologies

MOSFET N-CH 500V 3.1A PG-TO-252

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 13V
• Vgs(th) (Max) @ Id: 3.5V @ 70µA
• Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 178pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 42W (Tc)
• Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 900mA, 13V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

BCX5516H6327XTSA1

Infineon Technologies

TRANSISTOR NPN SOT89

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
• Power - Max: 2W
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: PG-SOT89

패키지: TO-243AA

BCR142B6327HTLA1

Infineon Technologies

TRANS PREBIAS NPN 200MW SOT23-3

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 22k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 150MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3

패키지: TO-236-3, SC-59, SOT-23-3

TLE72722DATMA1

Infineon Technologies

IC REG LINEAR 5V 300MA TO252-5

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 42V
• Voltage - Output (Min/Fixed): 5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.5V @ 200mA
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 30µA ~ 40µA
• PSRR: 60dB (100Hz)
• Control Features: Enable, Reset
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
• Supplier Device Package: PG-TO252-5

패키지: TO-252-5, DPak (4 Leads + Tab), TO-252AD

BCR402WH6327XTSA1

Infineon Technologies

IC LED DRIVER LIN 60MA SOT343-4

• Type: Linear
• Topology: -
• Internal Switch(s): Yes
• Number of Outputs: 1
• Voltage - Supply (Min): 1.2V
• Voltage - Supply (Max): 18V
• Voltage - Output: 18V
• Current - Output / Channel: 60mA
• Frequency: -
• Dimming: -
• Applications: Lighting
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: PG-SOT343-4

패키지: SC-82A, SOT-343

PEF 20525 F V1.3

Infineon Technologies

IC CTRL PPP/HDLC SERIAL TQFP-100

• Function: Serial Optimized Communications Controller
• Interface: ASYNC, BISYNC, HDLC, PPP
• Number of Circuits: 2
• Voltage - Supply: 3 V ~ 3.6 V
• Current - Supply: 50mA
• Power (Watts): 150mW
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: P-TQFP-100

패키지: 100-LQFP

TLE7250LEXUMA1

Infineon Technologies

IC TXRX CAN 1MBPS PG-TSON-8

• Type: Transceiver
• Protocol: CAN
• Number of Drivers/Receivers: 1/1
• Duplex: Half
• Receiver Hysteresis: 100mV
• Data Rate: 1Mbps
• Voltage - Supply: 4.75 V ~ 5.25 V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 8-TDFN Exposed Pad
• Supplier Device Package: PG-TSON-8

패키지: 8-TDFN Exposed Pad

TLE7258SJXUMA1

Infineon Technologies

IC TXRX LIN SLAVE NODE 8DSOP

• Type: Transceiver
• Protocol: LIN
• Number of Drivers/Receivers: 1/1
• Duplex: -
• Receiver Hysteresis: 120mV
• Data Rate: 20kbps
• Voltage - Supply: 5.5 V ~ 18 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8

패키지: 8-SOIC (0.154", 3.90mm Width)

TLE9835QXXUMA1

Infineon Technologies

IC MOTOR DRIVER 48VQFN

• Applications: Automotive
• Core Processor: XC800
• Program Memory Type: FLASH (64 kB)
• Controller Series: -
• RAM Size: 3.25K x 8
• Interface: LIN, SSI, UART
• Number of I/O: 11
• Voltage - Supply: 3 V ~ 27 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: PG-VQFN-48-29

패키지: 48-VFQFN Exposed Pad

TLE9833QXXUMA1

Infineon Technologies

IC MOTOR DRIVER 48VQFN

• Applications: Automotive
• Core Processor: XC800
• Program Memory Type: FLASH (48 kB)
• Controller Series: -
• RAM Size: 3.25K x 8
• Interface: LIN, SSI, UART
• Number of I/O: 11
• Voltage - Supply: 3 V ~ 27 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: -

패키지: 48-VFQFN Exposed Pad

TLE4966H

Infineon Technologies

MAGNETIC SWITCH BIPOLAR 6TSOP

• Function: Bipolar Switch
• Technology: Hall Effect
• Polarization: South Pole
• Sensing Range: 10mT Trip, -10mT Release
• Test Condition: 25°C
• Voltage - Supply: 2.7 V ~ 18 V
• Current - Supply (Max): 7mA
• Current - Output (Max): 10mA
• Output Type: Open Collector
• Features: Temperature Compensated
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: SOT-23-6 Thin, TSOT-23-6
• Supplier Device Package: 6-TSOP

패키지: SOT-23-6 Thin, TSOT-23-6

CHL8104-03CRT

Infineon Technologies

IC REG BUCK 40VQFN

• Output Type: -
• Function: -
• Output Configuration: -
• Topology: -
• Number of Outputs: -
• Output Phases: -
• Voltage - Supply (Vcc/Vdd): -
• Frequency - Switching: -
• Duty Cycle (Max): -
• Synchronous Rectifier: -
• Clock Sync: -
• Serial Interfaces: -
• Control Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

IRPS5401MXI04TRPAUMA1

Infineon Technologies

IC REG ADJ 50A 5OUT 56QFN

• Function: -
• Output Configuration: Negative
• Topology: -
• Output Type: Adjustable
• Number of Outputs: 5
• Voltage - Input (Min): 5.5V
• Voltage - Input (Max): 12V
• Voltage - Output (Min/Fixed): 0.5V
• Voltage - Output (Max): 3.6V
• Current - Output: 50A
• Frequency - Switching: 200kHz ~ 1MHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 56-VFQFN Exposed Pad
• Supplier Device Package: 56-QFN (7x7)

패키지: 56-VFQFN Exposed Pad

CYT2BL8BAAQ0AZEGS

Infineon Technologies

IC MCU 32BIT 4.16MB FLSH 176LQFP

• Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
• Core Size: 32-Bit Dual-Core
• Speed: 100MHz, 160MHz
• Connectivity: CANbus, FIFO, I2C, LINbus, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
• Number of I/O: 152
• Program Memory Size: 4.16MB (4.16M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 128K x 8
• RAM Size: 512K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 64x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 176-LQFP
• Supplier Device Package: 176-LQFP (24x24)

패키지: -

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IPP320N20N3GXKSA1

Infineon Technologies

MOSFET N-CH 200V 34A TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200 V
• Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 90µA
• Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 136W (Tc)
• Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3
• Package / Case: TO-220-3

패키지: -

TT250N18KOFHPSA1

Infineon Technologies

SCR MODULE 1.8KV 250A MODULE

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 1.8 kV
• Current - On State (It (AV)) (Max): 250 A
• Current - On State (It (RMS)) (Max): -
• Voltage - Gate Trigger (Vgt) (Max): 2 V
• Current - Gate Trigger (Igt) (Max): 200 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 8000A @ 50Hz
• Current - Hold (Ih) (Max): 300 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module

패키지: -

CY15V104QN-20LPXIT

Infineon Technologies

IC FRAM 4MBIT SPI 20MHZ 8GQFN

• Memory Type: Non-Volatile
• Memory Format: FRAM
• Technology: FRAM (Ferroelectric RAM)
• Memory Size: 4Mbit
• Memory Interface: SPI
• Clock Frequency: 20 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 20 ns
• Voltage - Supply: 1.71V ~ 1.89V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-UQFN
• Supplier Device Package: 8-GQFN (3.23x3.28)

패키지: -

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IPG20N04S418AATMA1

Infineon Technologies

MOSFET 2N-CH 40V 20A 8TDSON

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Rds On (Max) @ Id, Vgs: 18.4mOhm @ 17A, 10V
• Vgs(th) (Max) @ Id: 4V @ 8µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 789pF @ 25V
• Power - Max: 26W (Tc)
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount, Wettable Flank
• Package / Case: 8-PowerVDFN
• Supplier Device Package: PG-TDSON-8-10

패키지: -

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MB1504PF-G-BND-JNE1

Infineon Technologies

IC SYNTHESIZER 16SOP

• Type: -
• PLL: -
• Input: -
• Output: -
• Number of Circuits: -
• Ratio - Input:Output: -
• Differential - Input:Output: -
• Frequency - Max: -
• Divider/Multiplier: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

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S80KS5122GABHV023

Infineon Technologies

IC PSRAM 512MBIT HYPERBUS 24FBGA

• Memory Type: Volatile
• Memory Format: PSRAM
• Technology: PSRAM (Pseudo SRAM)
• Memory Size: 512Mbit
• Memory Interface: HyperBus
• Clock Frequency: 200 MHz
• Write Cycle Time - Word, Page: 35ns
• Access Time: 35 ns
• Voltage - Supply: 1.7V ~ 2V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: 24-FBGA (6x8)

패키지: -

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CY9AF112NABGL-GK9E1

Infineon Technologies

IC MCU 32BIT 128KB FLASH 112BGA

• Core Processor: ARM® Cortex®-M3
• Core Size: 32-Bit Single-Core
• Speed: 40MHz
• Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number of I/O: 83
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 16x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 112-LFBGA
• Supplier Device Package: 112-PFBGA (10x10)

패키지: -

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