페이지 58 - Infineon Technologies 제품 | Heisener Electronics
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Infineon Technologies 제품

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hot IHW40N60R
Infineon Technologies

IGBT 600V 80A 305W TO247-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 40A
  • Power - Max: 305W
  • Switching Energy: 750µJ (off)
  • Input Type: Standard
  • Gate Charge: 223nC
  • Td (on/off) @ 25°C: -/193ns
  • Test Condition: 400V, 40A, 5.6 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고116,892
IRL3303STRRPBF
Infineon Technologies

MOSFET N-CH 30V 38A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고7,504
IRF2807ZSPBF
Infineon Technologies

MOSFET N-CH 75V 75A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3270pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 53A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고4,048
hot IRLR3714
Infineon Technologies

MOSFET N-CH 20V 36A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 47W (Tc)
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고120,960
hot IRFU3910
Infineon Technologies

MOSFET N-CH 100V 16A I-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 79W (Tc)
  • Rds On (Max) @ Id, Vgs: 115 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: IPAK (TO-251)
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
패키지: TO-251-3 Short Leads, IPak, TO-251AA
재고81,108
IPI80N06S4L07AKSA2
Infineon Technologies

MOSFET N-CH 60V 80A TO262-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 40µA
  • Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5680pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 79W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3-1
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA
재고3,504
IPP60R099P6XKSA1
Infineon Technologies

MOSFET N-CH 600V TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.21mA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3330pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 278W (Tc)
  • Rds On (Max) @ Id, Vgs: 99 mOhm @ 14.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
패키지: TO-220-3
재고6,780
hot IRFB3206PBF
Infineon Technologies

MOSFET N-CH 60V 120A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6540pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: TO-220-3
재고20,088
hot SPW17N80C3
Infineon Technologies

MOSFET N-CH 800V 17A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 177nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2320pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 227W (Tc)
  • Rds On (Max) @ Id, Vgs: 290 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3
  • Package / Case: TO-247-3
패키지: TO-247-3
재고17,832
hot IRF7341TRPBF
Infineon Technologies

MOSFET 2N-CH 55V 4.7A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고1,397,436
BAR 90-098L4 E6327
Infineon Technologies

DIODE PIN ANTI 80V 100MA TSLP4-4

  • Diode Type: PIN - 2 Independent
  • Voltage - Peak Reverse (Max): 80V
  • Current - Max: 100mA
  • Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz
  • Resistance @ If, F: 800 mOhm @ 10mA, 100MHz
  • Power Dissipation (Max): 250mW
  • Operating Temperature: 150°C (TJ)
  • Package / Case: 4-XFDFN
  • Supplier Device Package: PG-TSLP-4
패키지: 4-XFDFN
재고3,696
BA 892-02L E6327
Infineon Technologies

DIODE RF SW 35V 100MA TSLP-2

  • Diode Type: Standard - Single
  • Voltage - Peak Reverse (Max): 35V
  • Current - Max: 100mA
  • Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
  • Resistance @ If, F: 500 mOhm @ 10mA, 100MHz
  • Power Dissipation (Max): -
  • Operating Temperature: 150°C (TJ)
  • Package / Case: SOD-882
  • Supplier Device Package: TSLP-2-1
패키지: SOD-882
재고7,200
hot IRU3037ACFTRPBF
Infineon Technologies

IC REG CTRLR BUCK/BOOST 8TSSOP

  • Output Type: Transistor Driver
  • Function: Step-Up, Step-Down
  • Output Configuration: Positive
  • Topology: Buck, Boost
  • Number of Outputs: 1
  • Output Phases: 1
  • Voltage - Supply (Vcc/Vdd): 4.2 V ~ 25 V
  • Frequency - Switching: 400kHz
  • Duty Cycle (Max): 90%
  • Synchronous Rectifier: Yes
  • Clock Sync: No
  • Serial Interfaces: -
  • Control Features: Enable, Soft Start
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
패키지: 8-TSSOP (0.173", 4.40mm Width)
재고77,268
98-0036
Infineon Technologies

IC DRIVER BRIDGE 3-PHASE 44-PLCC

  • Driven Configuration: Half-Bridge
  • Channel Type: 3-Phase
  • Number of Drivers: 6
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.2V
  • Current - Peak Output (Source, Sink): 250mA, 500mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 80ns, 35ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 44-LCC (J-Lead), 32 Leads
  • Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
패키지: 44-LCC (J-Lead), 32 Leads
재고4,160
hot IR2127SPBF
Infineon Technologies

IC MOSFET DRVR CURR SENSE 8SOIC

  • Driven Configuration: High-Side or Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 12 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 250mA, 500mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 80ns, 40ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고196,812
ICE3BR0665JZXKLA1
Infineon Technologies

IC OFFLINE CTRLR SMPS OTP

  • Output Isolation: Isolated
  • Internal Switch(s): Yes
  • Voltage - Breakdown: 650V
  • Topology: Flyback
  • Voltage - Start Up: 18V
  • Voltage - Supply (Vcc/Vdd): 10.5 V ~ 25 V
  • Duty Cycle: 75%
  • Frequency - Switching: 65kHz
  • Power (Watts): 74W
  • Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
  • Control Features: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: PG-DIP-8
  • Mounting Type: Through Hole
패키지: 8-DIP (0.300", 7.62mm)
재고2,176
BTS70802EPAXUMA1
Infineon Technologies

IC SWITCH HI SIDE TSDSO-14

  • Switch Type: -
  • Number of Outputs: -
  • Ratio - Input:Output: -
  • Output Configuration: -
  • Output Type: -
  • Interface: -
  • Voltage - Load: -
  • Voltage - Supply (Vcc/Vdd): -
  • Current - Output (Max): -
  • Rds On (Typ): -
  • Input Type: -
  • Features: -
  • Fault Protection: -
  • Operating Temperature: -
  • Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: PG-TSDSO-14-22
패키지: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
재고5,744
TC275TP64F200WDCLXUMA1
Infineon Technologies

IC MCU 32BIT 4MB FLASH 176TQFP

  • Core Processor: -
  • Core Size: -
  • Speed: -
  • Connectivity: -
  • Peripherals: -
  • Number of I/O: -
  • Program Memory Size: -
  • Program Memory Type: -
  • EEPROM Size: -
  • RAM Size: -
  • Voltage - Supply (Vcc/Vdd): -
  • Data Converters: -
  • Oscillator Type: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,048
6MS30017E43W34404NOSA1
Infineon Technologies

IGBT MODULE 1700V 4280A

  • IGBT Type: -
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 4280 A
  • Power - Max: 32300 W
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -25°C ~ 55°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
IRS2008MTRPBFAUMA1
Infineon Technologies

IC 200V HALF BRIDGE GATE DRIVER

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10V ~ 20V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 290mA, 600mA
  • Input Type: CMOS
  • High Side Voltage - Max (Bootstrap): 200 V
  • Rise / Fall Time (Typ): 70ns, 30ns
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 14-VFQFN Exposed Pad
  • Supplier Device Package: 14-MLPQ (4x4)
패키지: -
재고27
IGI60F2020A1LAUMA1
Infineon Technologies

IC HALF BRIDGE DRIVER 5A 28TIQFN

  • Output Configuration: Half Bridge (3)
  • Applications: DC Motors, DC-DC Converters
  • Interface: -
  • Load Type: Inductive, Capacitive, Resistive
  • Technology: NMOS, PMOS
  • Rds On (Typ): 200mOhm LS, 200mOhm HS
  • Current - Output / Channel: 5A
  • Current - Peak Output: 14.1A
  • Voltage - Supply: 3V ~ 3.5V
  • Voltage - Load: 5.5V ~ 12V
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Features: -
  • Fault Protection: -
  • Mounting Type: Surface Mount
  • Package / Case: 28-PowerTQFN
  • Supplier Device Package: PG-TIQFN-28-1
패키지: -
Request a Quote
PXE1610ADN-IN5401
Infineon Technologies

IC CONTROLLER

  • Output Type: -
  • Function: -
  • Output Configuration: -
  • Topology: -
  • Number of Outputs: -
  • Output Phases: -
  • Voltage - Supply (Vcc/Vdd): -
  • Frequency - Switching: -
  • Duty Cycle (Max): -
  • Synchronous Rectifier: -
  • Clock Sync: -
  • Serial Interfaces: -
  • Control Features: -
  • Operating Temperature: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
FF300R12ME3BOSA1
Infineon Technologies

IGBT MOD 1200V 500A 1450W

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 500 A
  • Power - Max: 1450 W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
TT390N18SOFHPSA1
Infineon Technologies

SCR MODULE 1.8KV 520A MODULE

  • Structure: Series Connection - All SCRs
  • Number of SCRs, Diodes: 2 SCRs
  • Voltage - Off State: 1.8 kV
  • Current - On State (It (AV)) (Max): 380 A
  • Current - On State (It (RMS)) (Max): 520 A
  • Voltage - Gate Trigger (Vgt) (Max): 2 V
  • Current - Gate Trigger (Igt) (Max): 150 mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 9500A @ 50Hz
  • Current - Hold (Ih) (Max): 150 mA
  • Operating Temperature: -40°C ~ 125°C (TC)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
패키지: -
재고18
S25HS01GTDPBHI030
Infineon Technologies

IC FLASH 1GBIT SPI/QUAD 24BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 1Gbit
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 2V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-BGA (8x6)
패키지: -
재고3,819
CY9BF114NPMC-G-JNE1
Infineon Technologies

MULTI-MARKET MCUS

  • Core Processor: ARM® Cortex®-M3
  • Core Size: 32-Bit
  • Speed: 144MHz
  • Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
  • Peripherals: DMA, LVD, POR, PWM, WDT
  • Number of I/O: 83
  • Program Memory Size: 256KB (256K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: 32K x 8
  • RAM Size: 32K x 8
  • Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
  • Data Converters: A/D 16x12b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-LQFP (14x14)
패키지: -
Request a Quote
S29PL127J60BFA043
Infineon Technologies

IC FLASH 128MBIT CFI 56FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 128Mbit
  • Memory Interface: CFI
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 60 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 56-VFBGA
  • Supplier Device Package: 56-FBGA (9x7)
패키지: -
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IRG4BC20SPBFXKMA1
Infineon Technologies

IGBT 600V 19A 60W TO220-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 19 A
  • Current - Collector Pulsed (Icm): 38 A
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 10A
  • Power - Max: 60 W
  • Switching Energy: 120µJ (on), 2.05mJ (off)
  • Input Type: Standard
  • Gate Charge: 27 nC
  • Td (on/off) @ 25°C: 27ns/540ns
  • Test Condition: 480V, 10A, 50Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: -
Request a Quote