Infineon Technologies 제품

SKB15N60HSATMA1

Infineon Technologies

IGBT 600V 27A 138W TO263-3

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 27A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 15A
• Power - Max: 138W
• Switching Energy: 530µJ
• Input Type: Standard
• Gate Charge: 80nC
• Td (on/off) @ 25°C: 13ns/209ns
• Test Condition: 400V, 15A, 23 Ohm, 15V
• Reverse Recovery Time (trr): 111ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: PG-TO263-3

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRGPC40FD2

Infineon Technologies

IGBT W/DIODE 600V 49A TO-247AC

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 49A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 27A
• Power - Max: 160W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

패키지: TO-247-3

IRLR8256PBF

Infineon Technologies

MOSFET N-CH 25V 81A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.35V @ 25µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 13V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 63W (Tc)
• Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

SPP15P10PGHKSA1

Infineon Technologies

MOSFET P-CH 100V 15A TO-220

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 2.1V @ 1.54mA
• Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1280pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 128W (Tc)
• Rds On (Max) @ Id, Vgs: 240 mOhm @ 10.6A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO-220-3
• Package / Case: TO-220-3

패키지: TO-220-3

IRF7210PBF

Infineon Technologies

MOSFET P-CH 12V 16A 8-SOIC

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 600mV @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 212nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 17179pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 7 mOhm @ 16A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

패키지: 8-SOIC (0.154", 3.90mm Width)

IRF7811A

Infineon Technologies

MOSFET N-CH 28V 11.4A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 28V
• Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1760pF @ 15V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 10 mOhm @ 11A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

패키지: 8-SOIC (0.154", 3.90mm Width)

BSB008NE2LXXUMA1

Infineon Technologies

MOSFET N-CH 25V 46A 2WDSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 180A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 343nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 16000pF @ 12V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
• Rds On (Max) @ Id, Vgs: 0.8 mOhm @ 30A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: MG-WDSON-2, CanPAK M?
• Package / Case: 3-WDSON

패키지: 3-WDSON

IPL65R650C6SATMA1

Infineon Technologies

MOSFET N-CH 8TSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 210µA
• Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 56.8W (Tc)
• Rds On (Max) @ Id, Vgs: 650 mOhm @ 2.1A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Thin-PAK (5x6)
• Package / Case: 8-PowerVDFN

패키지: 8-PowerVDFN

BSO201SP H

Infineon Technologies

MOSFET P-CH 20V 12A 8SOIC

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 88nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 9600pF @ 15V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.6W (Ta)
• Rds On (Max) @ Id, Vgs: 8 mOhm @ 14.9A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-DSO-8
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

패키지: 8-SOIC (0.154", 3.90mm Width)

BC 846PN H6727

Infineon Technologies

TRANS NPN/PNP 65V 0.1A SOT363-6

• Transistor Type: NPN, PNP
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 65V
• Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 250mW
• Frequency - Transition: 250MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-VSSOP, SC-88, SOT-363
• Supplier Device Package: PG-SOT363-6

패키지: 6-VSSOP, SC-88, SOT-363

IDK10G65C5XTMA1

Infineon Technologies

DIODE SCHOTTKY 650V 10A TO263-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io): 10A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 1.7mA @ 650V
• Capacitance @ Vr, F: 300pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: PG-TO263-2
• Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRU3033CS

Infineon Technologies

IC CTRL/REG PWM SWITCH 8-SOIC

• Applications: Controller, Intel Pentium?, II, P55C
• Voltage - Input: 12V
• Number of Outputs: 1
• Voltage - Output: 2 V ~ 3.5 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

TLE4263GXUMA2

Infineon Technologies

IC REG LINEAR 200MA DSO-20

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 200mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-20

패키지: 8-SOIC (0.154", 3.90mm Width)

TLE4274GV10ATMA2

Infineon Technologies

IC REG LINEAR 10V 400MA TO263-3

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 40V
• Voltage - Output (Min/Fixed): 10V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.5V @ 250mA
• Current - Output: 400mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 220µA ~ 30mA
• PSRR: 60dB (100Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
• Supplier Device Package: PG-TO263-3-1

패키지: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

IR2301SPBF

Infineon Technologies

IC DRIVER HIGH/LOW SIDE 8SOIC

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 5 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.9V
• Current - Peak Output (Source, Sink): 200mA, 350mA
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 130ns, 50ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

PEB 4264-2 T V1.2

Infineon Technologies

IC SLIC VOICE ACCESS PDSO-20

• Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC)
• Interface: IOM-2, PCM
• Number of Circuits: 2
• Voltage - Supply: 3.3 V ~ 5 V
• Current - Supply: 105mA
• Power (Watts): -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
• Supplier Device Package: P-DSO-20

패키지: 20-SOIC (0.433", 11.00mm Width) Exposed Pad

BGS15AN16BOARDTOBO1

Infineon Technologies

BOARD BGS15AM RF MOS WCDMA

• Type: Switch, SP5T
• Frequency: 100MHz ~ 3GHz
• For Use With/Related Products: BGS15AN16
• Supplied Contents: Board

패키지: -

MA12070XUMA1

Infineon Technologies

IC AMP AUDIO 2X80W 64QFN

• Type: Class D
• Output Type: 2-Channel (Stereo)
• Max Output Power x Channels @ Load: 30W x 2 @ 8 Ohm
• Voltage - Supply: 4 V ~ 26 V
• Features: Digital Inputs, I²S, Mute, Short-Circuit and Thermal Protection, Undervoltage, Volume Control
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 85°C (TA)
• Supplier Device Package: 64-QFN-EP (9x9)
• Package / Case: 64-VFQFN Exposed Pad

패키지: 64-VFQFN Exposed Pad

XC2286M72F66LABHXUMA1

Infineon Technologies

IC MCU 16BIT 144LQFP

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

TLE4276GVATMA4

Infineon Technologies

TLE4276G - OPTIREG LINEAR LOW DR

• Output Configuration: Positive
• Output Type: Adjustable
• Number of Regulators: 1
• Voltage - Input (Max): 40V
• Voltage - Output (Min/Fixed): 2.5V
• Voltage - Output (Max): 20V
• Voltage Dropout (Max): 0.5V @ 250mA
• Current - Output: 400mA
• Current - Quiescent (Iq): 200 µA
• Current - Supply (Max): 25 mA
• PSRR: 54dB (100Hz)
• Control Features: Inhibit
• Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
• Supplier Device Package: PG-TO263-5-1

패키지: -

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T1500N16TOFS02XPSA1

Infineon Technologies

DIODE BG-T7526K-1

• Structure: Single
• Number of SCRs, Diodes: 1 SCR
• Voltage - Off State: 1.6 kV
• Current - On State (It (AV)) (Max): 1500 A
• Current - On State (It (RMS)) (Max): 3500 A
• Voltage - Gate Trigger (Vgt) (Max): 2 V
• Current - Gate Trigger (Igt) (Max): 250 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 39000A @ 50Hz
• Current - Hold (Ih) (Max): 500 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Clamp On
• Package / Case: TO-200AC, B-PUK

패키지: -

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IPA65R380E6XKSA1

Infineon Technologies

MOSFET N-CH 650V 10.6A TO220-FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 320µA
• Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 31W (Tc)
• Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-FP
• Package / Case: TO-220-3 Full Pack

패키지: -

CYAT81659-100AA48T

Infineon Technologies

PSOC BASED - TRUETOUCH

• Touchscreen: 2 Wire Capacitive
• Resolution (Bits): -
• Interface: I2C, SPI
• Voltage Reference: -
• Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
• Current - Supply: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x14)

패키지: -

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CY95F108AHSPMC1-G-UNE1

Infineon Technologies

IC MCU 8BIT 60KB FLASH 64LQFP

• Core Processor: F²MC-8FX
• Core Size: 8-Bit
• Speed: 16.25MHz
• Connectivity: I2C, LINbus, SIO, UART/USART
• Peripherals: POR, PWM, WDT
• Number of I/O: 54
• Program Memory Size: 60KB (60K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 2K x 8
• Voltage - Supply (Vcc/Vdd): 2.42V ~ 5.5V
• Data Converters: A/D 12x8/10b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-LQFP (10x10)

패키지: -

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S26HL512TFPBHB000

Infineon Technologies

IC FLASH 512MBIT HYPERBUS 24FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 512Mbit
• Memory Interface: HyperBus
• Clock Frequency: 166 MHz
• Write Cycle Time - Word, Page: 1.7ms
• Access Time: 6.5 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: 24-FBGA (6x8)

패키지: -

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S25FL256SDSBHVA10

Infineon Technologies

IC FLASH 256MBIT SPI/QUAD 24BGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 256Mbit
• Memory Interface: SPI - Quad I/O
• Clock Frequency: 80 MHz
• Write Cycle Time - Word, Page: 750µs
• Access Time: 6.5 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-TBGA
• Supplier Device Package: 24-BGA (8x6)

패키지: -

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FP40R12KT3BPSA1

Infineon Technologies

LOW POWER ECONO

• IGBT Type: -
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 55 A
• Power - Max: 105 W
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
• Current - Collector Cutoff (Max): 5 mA
• Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
• Input: Three Phase Bridge Rectifier
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-ECONO2-8

패키지: -

AIMZHN120R030M1TXKSA1

Infineon Technologies

SIC_DISCRETE

• FET Type: N-Channel
• Technology: SiC (Silicon Carbide Junction Transistor)
• Drain to Source Voltage (Vdss): 1200 V
• Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
• Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
• Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V
• Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V
• Vgs (Max): +23V, -5V
• FET Feature: -
• Power Dissipation (Max): 326W (Tc)
• Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO247-4-14
• Package / Case: TO-247-4

패키지: -

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