페이지 1011 - 메모리 | 집적 회로(IC) | Heisener Electronics
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제조업체
설명
패키지
재고
수량
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
PZ28F064M29EWLX
Micron Technology Inc.

IC FLASH 64MBIT 60NS 48BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mb (8M x 8, 4M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 60ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFBGA
  • Supplier Device Package: 48-BGA (6x8)
패키지: 48-VFBGA
재고3,136
FLASH
FLASH - NOR
64Mb (8M x 8, 4M x 16)
Parallel
-
60ns
60ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-VFBGA
48-BGA (6x8)
AT25320B-MAHL-T
Microchip Technology

IC EEPROM 32KBIT 20MHZ 8UDFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 32Kb (4K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 20MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UFDFN Exposed Pad
  • Supplier Device Package: 8-UDFN (2x3)
패키지: 8-UFDFN Exposed Pad
재고5,712
EEPROM
EEPROM
32Kb (4K x 8)
SPI
20MHz
5ms
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-UFDFN Exposed Pad
8-UDFN (2x3)
CYK512K16SCAU-70BAXIT
Cypress Semiconductor Corp

IC PSRAM 8MBIT 70NS 48FBGA

  • Memory Type: Volatile
  • Memory Format: PSRAM
  • Technology: PSRAM (Pseudo SRAM)
  • Memory Size: 8Mb (512K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.3 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-FBGA (6x8)
패키지: 48-TFBGA
재고2,480
PSRAM
PSRAM (Pseudo SRAM)
8Mb (512K x 16)
Parallel
-
70ns
70ns
2.7 V ~ 3.3 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFBGA
48-FBGA (6x8)
CY62256LL-70ZXI
Cypress Semiconductor Corp

IC SRAM 256KBIT 70NS 28TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-TSSOP (0.465", 11.80mm Width)
  • Supplier Device Package: 28-TSOP I
패키지: 28-TSSOP (0.465", 11.80mm Width)
재고5,200
SRAM
SRAM - Asynchronous
256Kb (32K x 8)
Parallel
-
70ns
70ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
28-TSSOP (0.465", 11.80mm Width)
28-TSOP I
MT48V8M32LFB5-10 IT TR
Micron Technology Inc.

IC SDRAM 256MBIT 100MHZ 90VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPSDR
  • Memory Size: 256Mb (8M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 7ns
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-VFBGA
  • Supplier Device Package: 90-VFBGA (8x13)
패키지: 90-VFBGA
재고3,968
DRAM
SDRAM - Mobile LPSDR
256Mb (8M x 32)
Parallel
100MHz
15ns
7ns
2.3 V ~ 2.7 V
-40°C ~ 85°C (TA)
Surface Mount
90-VFBGA
90-VFBGA (8x13)
hot LH28F160BJHE-TTL90
Sharp Microelectronics

IC FLASH 16MBIT 90NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - Boot Block
  • Memory Size: 16Mb (2M x 8, 1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 90ns
  • Access Time: 90ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP
패키지: 48-TFSOP (0.724", 18.40mm Width)
재고12,012
FLASH
FLASH - Boot Block
16Mb (2M x 8, 1M x 16)
Parallel
-
90ns
90ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP
hot AT49F040-12TI
Microchip Technology

IC FLASH 4MBIT 120NS 32TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 50µs
  • Access Time: 120ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 32-TSOP
패키지: 32-TFSOP (0.724", 18.40mm Width)
재고150,588
FLASH
FLASH
4Mb (512K x 8)
Parallel
-
50µs
120ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Surface Mount
32-TFSOP (0.724", 18.40mm Width)
32-TSOP
AT27C2048-12JI
Microchip Technology

IC OTP 2MBIT 120NS 44PLCC

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 2Mb (128K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 120ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 44-LCC (J-Lead)
  • Supplier Device Package: 44-PLCC (16.59x16.59)
패키지: 44-LCC (J-Lead)
재고5,872
EPROM
EPROM - OTP
2Mb (128K x 16)
Parallel
-
-
120ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Surface Mount
44-LCC (J-Lead)
44-PLCC (16.59x16.59)
70V639S10PRF8
IDT, Integrated Device Technology Inc

IC SRAM 2.25MBIT 10NS 128TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 2.25Mb (128K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 3.15 V ~ 3.45 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 128-LQFP
  • Supplier Device Package: 128-TQFP (14x20)
패키지: 128-LQFP
재고5,824
SRAM
SRAM - Dual Port, Asynchronous
2.25Mb (128K x 18)
Parallel
-
10ns
10ns
3.15 V ~ 3.45 V
0°C ~ 70°C (TA)
Surface Mount
128-LQFP
128-TQFP (14x20)
71V65603S150BGG8
IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 150MHZ 119BGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous ZBT
  • Memory Size: 9Mb (256K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 150MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.8ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 119-BGA
  • Supplier Device Package: 119-PBGA (14x22)
패키지: 119-BGA
재고7,152
SRAM
SRAM - Synchronous ZBT
9Mb (256K x 36)
Parallel
150MHz
-
3.8ns
3.135 V ~ 3.465 V
0°C ~ 70°C (TA)
Surface Mount
119-BGA
119-PBGA (14x22)
AS4C512M8D3A-12BINTR
Alliance Memory, Inc.

IC SDRAM 4GBIT 800MHZ 78BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 4Gb (512M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 800MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20ns
  • Voltage - Supply: 1.425 V ~ 1.575 V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-VFBGA
  • Supplier Device Package: 78-FBGA (10.5x9)
패키지: 78-VFBGA
재고4,736
DRAM
SDRAM - DDR3
4Gb (512M x 8)
Parallel
800MHz
15ns
20ns
1.425 V ~ 1.575 V
-40°C ~ 95°C (TC)
Surface Mount
78-VFBGA
78-FBGA (10.5x9)
93AA86AT-I/SN
Microchip Technology

IC EEPROM 16KBIT 3MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 3MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고3,296
EEPROM
EEPROM
16Kb (2K x 8)
SPI
3MHz
5ms
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
BR24C16-RDS6TP
Rohm Semiconductor

IC EEPROM 16KBIT 100KHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 100kHz
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 8-TSSOP
패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
재고7,744
EEPROM
EEPROM
16Kb (2K x 8)
I2C
100kHz
10ms
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
8-TSSOP
93C56C-E/P
Microchip Technology

IC EEPROM 2KBIT 3MHZ 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8, 128 x 16)
  • Memory Interface: SPI
  • Clock Frequency: 3MHz
  • Write Cycle Time - Word, Page: 2ms
  • Access Time: -
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
패키지: 8-DIP (0.300", 7.62mm)
재고3,744
EEPROM
EEPROM
2Kb (256 x 8, 128 x 16)
SPI
3MHz
2ms
-
4.5 V ~ 5.5 V
-40°C ~ 125°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
11LC020T-I/MS
Microchip Technology

IC EEPROM 2KBIT 100KHZ 8MSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: Single Wire
  • Clock Frequency: 100kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 8-MSOP
패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
재고5,328
EEPROM
EEPROM
2Kb (256 x 8)
Single Wire
100kHz
5ms
-
2.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
8-MSOP
24AA256UID-I/SN
Microchip Technology

IC EEPROM 256KBIT 400KHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고10,092
EEPROM
EEPROM
256Kb (32K x 8)
I2C
400kHz
5ms
900ns
1.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
24AA08H-I/WF16K
Microchip Technology

IC EEPROM 8K I2C 400KHZ WAFER

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 8Kb (256 x 8 x 4)
  • Memory Interface: I²C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: Die
재고2,128
EEPROM
EEPROM
8Kb (256 x 8 x 4)
I²C
400kHz
5ms
900ns
1.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
Die
Die
S29GL032N90FFI032
Cypress Semiconductor Corp

IC FLASH 32M PARALLEL 64BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 32Mb (4M x 8, 2M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 90ns
  • Access Time: 90ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-FBGA (13x11)
패키지: 64-LBGA
재고3,600
FLASH
FLASH - NOR
32Mb (4M x 8, 2M x 16)
Parallel
-
90ns
90ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
64-LBGA
64-FBGA (13x11)
MT61M256M32JE-10 N:A TR
Micron Technology Inc.

IC RAM 8G PARALLEL 1.25GHZ

  • Memory Type: Volatile
  • Memory Format: RAM
  • Technology: SGRAM - GDDR6
  • Memory Size: 8Gb (256M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 1.25GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.21 V ~ 1.29 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,800
RAM
SGRAM - GDDR6
8Gb (256M x 32)
Parallel
1.25GHz
-
-
1.21 V ~ 1.29 V
0°C ~ 95°C (TC)
-
-
-
AS4C16M16MD1-6BINTR
Alliance Memory, Inc.

IC DRAM 256M PARALLEL 60FPBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-FPBGA (8x9)
패키지: 60-TFBGA
재고6,704
DRAM
SDRAM - Mobile LPDDR
256Mb (16M x 16)
Parallel
166MHz
15ns
-
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
60-TFBGA
60-FPBGA (8x9)
70V9359L12PF
IDT, Integrated Device Technology Inc

IC SRAM 144K PARALLEL 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Synchronous
  • Memory Size: 144Kb (8K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 12ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
패키지: 100-LQFP
재고7,312
SRAM
SRAM - Dual Port, Synchronous
144Kb (8K x 18)
Parallel
-
-
12ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
NDL28PFH-9MET-TR
Insignis Technology Corporation

IC DRAM 2GBIT PARALLEL 78FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 2Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 933 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.283V ~ 1.45V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-VFBGA
  • Supplier Device Package: 78-FBGA (8x10.5)
패키지: -
Request a Quote
DRAM
SDRAM - DDR3L
2Gbit
Parallel
933 MHz
15ns
20 ns
1.283V ~ 1.45V
0°C ~ 95°C (TC)
Surface Mount
78-VFBGA
78-FBGA (8x10.5)
W66AQ6NBHAFJ
Winbond Electronics

1GB LPDDR4X, X16, 1600MHZ, -40C~

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4X
  • Memory Size: 1Gbit
  • Memory Interface: LVSTL_06
  • Clock Frequency: 1.6 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.6 ns
  • Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 100-VFBGA
  • Supplier Device Package: 100-VFBGA (10x7.5)
패키지: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR4X
1Gbit
LVSTL_06
1.6 GHz
18ns
3.6 ns
1.06V ~ 1.17V, 1.7V ~ 1.95V
-40°C ~ 105°C (TC)
Surface Mount
100-VFBGA
100-VFBGA (10x7.5)
24FC08T-E-MS
Microchip Technology

IC EEPROM 8KBIT I2C 1MHZ 8MSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 8Kbit
  • Memory Interface: I2C
  • Clock Frequency: 1 MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 450 µs
  • Voltage - Supply: 1.7V ~ 5.5V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 8-MSOP
패키지: -
Request a Quote
EEPROM
EEPROM
8Kbit
I2C
1 MHz
5ms
450 µs
1.7V ~ 5.5V
-40°C ~ 125°C (TA)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
8-MSOP
THGJFAT0T44BAIL
Kioxia America, Inc.

128GB V3.1 UNIVERSAL FLASH STORA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 1Tbit
  • Memory Interface: UFS
  • Clock Frequency: 1.16 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.4V ~ 2.7V, 2.7V ~ 3.6V
  • Operating Temperature: -25°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 153-WBGA
  • Supplier Device Package: 153-BGA (11.5x13)
패키지: -
Request a Quote
FLASH
FLASH - NAND
1Tbit
UFS
1.16 GHz
-
-
2.4V ~ 2.7V, 2.7V ~ 3.6V
-25°C ~ 85°C (TC)
Surface Mount
153-WBGA
153-BGA (11.5x13)
EAN63386701
Infineon Technologies

AUTO MCU

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
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70824S20PFI
Renesas Electronics Corporation

IC RAM

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM
  • Memory Size: 64Kbit
  • Memory Interface: Parallel
  • Clock Frequency: 40 MHz
  • Write Cycle Time - Word, Page: 20ns
  • Access Time: 20 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 80-LQFP
  • Supplier Device Package: 80-TQFP (14x14)
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SRAM
SRAM
64Kbit
Parallel
40 MHz
20ns
20 ns
4.5V ~ 5.5V
-40°C ~ 85°C (TA)
Surface Mount
80-LQFP
80-TQFP (14x14)
W634GU8RB-11
Winbond Electronics

4GB DDR3L 1.35V SDRAM, X8, 933MH

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 4Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 933 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.283V ~ 1.45V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-VFBGA
  • Supplier Device Package: 78-VFBGA (8x10.5)
패키지: -
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DRAM
SDRAM - DDR3L
4Gbit
Parallel
933 MHz
15ns
20 ns
1.283V ~ 1.45V
0°C ~ 95°C (TC)
Surface Mount
78-VFBGA
78-VFBGA (8x10.5)