페이지 1030 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT53B4DBEZ-DC TR	Micron Technology Inc.	LPDDR4 32G 512MX64 FBGA QDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,336	-	-	-	-	-	-	-	-	-	-	-	-
IS49NLS18160-33BI	ISSI, Integrated Silicon Solution Inc	IC DRAM 288MBIT 300MHZ 144BGA Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 288Mb (16M x 18) Memory Interface: Parallel Clock Frequency: 300MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 144-TFBGA Supplier Device Package: 144-FCBGA (11x18.5)	패키지: 144-TFBGA	재고6,192	DRAM	DRAM	288Mb (16M x 18)	Parallel	300MHz	-	20ns	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	144-TFBGA	144-FCBGA (11x18.5)
CY7C1413TV18-250BZC	Cypress Semiconductor Corp	IC SRAM 36MBIT 250MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II Memory Size: 36Mb (2M x 18) Memory Interface: Parallel Clock Frequency: 250MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	패키지: 165-LBGA	재고4,432	SRAM	SRAM - Synchronous, QDR II	36Mb (2M x 18)	Parallel	250MHz	-	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
CY7C1393BV18-250BZI	Cypress Semiconductor Corp	IC SRAM 18MBIT 250MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, DDR II Memory Size: 18Mb (1M x 18) Memory Interface: Parallel Clock Frequency: 250MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	패키지: 165-LBGA	재고4,144	SRAM	SRAM - Synchronous, DDR II	18Mb (1M x 18)	Parallel	250MHz	-	-	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
AT24C512BN-SH25-T	Microchip Technology	IC EEPROM 512KBIT 1MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 512Kb (64K x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 550ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고5,792	EEPROM	EEPROM	512Kb (64K x 8)	I2C	1MHz	5ms	550ns	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
AT28C64-12SC	Microchip Technology	IC EEPROM 64KBIT 120NS 28SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64Kb (8K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 1ms Access Time: 120ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.295", 7.50mm Width) Supplier Device Package: 28-SOIC	패키지: 28-SOIC (0.295", 7.50mm Width)	재고5,200	EEPROM	EEPROM	64Kb (8K x 8)	Parallel	-	1ms	120ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TC)	Surface Mount	28-SOIC (0.295", 7.50mm Width)	28-SOIC
70V3399S133BFI	IDT, Integrated Device Technology Inc	IC SRAM 2MBIT 133MHZ 208CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 2Mb (128K x 18) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 4.2ns Voltage - Supply: 3.15 V ~ 3.45 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 208-LFBGA Supplier Device Package: 208-CABGA (15x15)	패키지: 208-LFBGA	재고2,100	SRAM	SRAM - Dual Port, Synchronous	2Mb (128K x 18)	Parallel	133MHz	-	4.2ns	3.15 V ~ 3.45 V	-40°C ~ 85°C (TA)	Surface Mount	208-LFBGA	208-CABGA (15x15)
CY7C1268KV18-400BZXC	Cypress Semiconductor Corp	IC SRAM 36MBIT 400MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, DDR II+ Memory Size: 36Mb (2M x 18) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	패키지: 165-LBGA	재고7,232	SRAM	SRAM - Synchronous, DDR II+	36Mb (2M x 18)	Parallel	400MHz	-	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
CY7C1441KV25-133BZXIT	Cypress Semiconductor Corp	IC SRAM 36MBIT 133MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 36Mb (1M x 36) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 6.5ns Voltage - Supply: 2.375 V ~ 2.625 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (15x17)	패키지: 165-LBGA	재고4,848	SRAM	SRAM - Synchronous	36Mb (1M x 36)	Parallel	133MHz	-	6.5ns	2.375 V ~ 2.625 V	-40°C ~ 85°C (TA)	Surface Mount	165-LBGA	165-FBGA (15x17)
MT53B384M64D4TX-053 WT ES:B TR	Micron Technology Inc.	IC SDRAM 24GBIT 1.8GHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 24Gb (384M x 64) Memory Interface: - Clock Frequency: 1866MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,632	DRAM	SDRAM - Mobile LPDDR4	24Gb (384M x 64)	-	1866MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
709089L15PF8	IDT, Integrated Device Technology Inc	IC SRAM 512KBIT 15NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 512Kb (64K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 15ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: 100-LQFP	재고2,208	SRAM	SRAM - Dual Port, Synchronous	512Kb (64K x 8)	Parallel	-	-	15ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
7164L70TDB	IDT, Integrated Device Technology Inc	IC SRAM 64KBIT 70NS 28CDIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 64Kb (8K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 28-CDIP (0.300", 7.62mm) Supplier Device Package: 28-CDIP	패키지: 28-CDIP (0.300", 7.62mm)	재고4,624	SRAM	SRAM - Asynchronous	64Kb (8K x 8)	Parallel	-	70ns	70ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	28-CDIP (0.300", 7.62mm)	28-CDIP
MT29F256G08CBHBBJ4-3RES:B TR	Micron Technology Inc.	IC FLASH 256GBIT 333MHZ 132VBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 256Gb (32G x 8) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.5 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,952	FLASH	FLASH - NAND	256Gb (32G x 8)	Parallel	333MHz	-	-	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
IS61LP6432A-133TQ	ISSI, Integrated Silicon Solution Inc	IC SRAM 2MBIT 133MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 2Mb (64K x 32) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 4ns Voltage - Supply: 3.135 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	패키지: 100-LQFP	재고7,632	SRAM	SRAM - Synchronous	2Mb (64K x 32)	Parallel	133MHz	-	4ns	3.135 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
MT25QU512ABB8E12-1SIT TR	Micron Technology Inc.	IC FLASH 512MBIT 133MHZ 24TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (64M x 8) Memory Interface: SPI Clock Frequency: 133MHz Write Cycle Time - Word, Page: 8ms, 2.8ms Access Time: - Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,416	FLASH	FLASH - NOR	512Mb (64M x 8)	SPI	133MHz	8ms, 2.8ms	-	1.7 V ~ 2 V	-40°C ~ 85°C (TA)	-	-	-
MX25U8033EBAI-12G	Macronix	IC FLASH 8MBIT 80MHZ 8WLCSP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 8Mb (1M x 8) Memory Interface: SPI Clock Frequency: 80MHz Write Cycle Time - Word, Page: 30µs, 3ms Access Time: - Voltage - Supply: 1.65 V ~ 2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-XFBGA, WLCSP Supplier Device Package: 8-WLCSP	패키지: 8-XFBGA, WLCSP	재고2,496	FLASH	FLASH - NOR	8Mb (1M x 8)	SPI	80MHz	30µs, 3ms	-	1.65 V ~ 2 V	-40°C ~ 85°C (TA)	Surface Mount	8-XFBGA, WLCSP	8-WLCSP
AT45DB081D-SU SL955-AD	Adesto Technologies	DATA FLASH Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 8Mb (256 Bytes x 4096 pages) Memory Interface: SPI Clock Frequency: 66MHz Write Cycle Time - Word, Page: 4ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고4,032	FLASH	FLASH	8Mb (256 Bytes x 4096 pages)	SPI	66MHz	4ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
S25FL512SAGBHI213	Cypress Semiconductor Corp	IC FLASH 512M SPI 133MHZ 24BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (64M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-BGA (8x6)	패키지: 24-TBGA	재고6,000	FLASH	FLASH - NOR	512Mb (64M x 8)	SPI - Quad I/O	133MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	24-TBGA	24-BGA (8x6)
IS61NVF102418-7.5B3I	ISSI, Integrated Silicon Solution Inc	IC SRAM 18M PARALLEL 165TFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 18Mb (1M x 18) Memory Interface: Parallel Clock Frequency: 117MHz Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 2.375 V ~ 2.625 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-TFBGA (13x15)	패키지: 165-TBGA	재고6,352	SRAM	SRAM - Synchronous	18Mb (1M x 18)	Parallel	117MHz	-	7.5ns	2.375 V ~ 2.625 V	-40°C ~ 85°C (TA)	Surface Mount	165-TBGA	165-TFBGA (13x15)
IS61LPS51236A-200B3I-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 18M PARALLEL 165TFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 18Mb (512K x 36) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3.1ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-TFBGA (13x15)	패키지: 165-TBGA	재고4,000	SRAM	SRAM - Synchronous	18Mb (512K x 36)	Parallel	200MHz	-	3.1ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	165-TBGA	165-TFBGA (13x15)
S28HL01GTFPBHV033	Infineon Technologies	IC FLASH 1GBIT SPI/OCTAL 24FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 1Gbit Memory Interface: SPI - Octal I/O Clock Frequency: 166 MHz Write Cycle Time - Word, Page: 1.7ms Access Time: 6.5 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-FBGA (8x8)	패키지: -	Request a Quote	FLASH	FLASH - NOR (SLC)	1Gbit	SPI - Octal I/O	166 MHz	1.7ms	6.5 ns	2.7V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	24-VBGA	24-FBGA (8x8)
MT58L128L32P1F-10	Micron Technology Inc.	IC SRAM 4MBIT PAR 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Standard Memory Size: 4Mbit Memory Interface: Parallel Clock Frequency: 100 MHz Write Cycle Time - Word, Page: - Access Time: 5 ns Voltage - Supply: 3.135V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-FBGA (13x15)	패키지: -	Request a Quote	SRAM	SRAM - Standard	4Mbit	Parallel	100 MHz	-	5 ns	3.135V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	165-TBGA	165-FBGA (13x15)
W25Q128FVSBQ	Winbond Electronics	IC FLASH 8SOIC Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
SM671PEB-ADSS	Silicon Motion, Inc.	IC FLASH 80GBIT UFS3.1 153BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 80Gbit Memory Interface: UFS3.1 Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 153-TFBGA Supplier Device Package: 153-BGA (11.5x13)	패키지: -	Request a Quote	FLASH	FLASH - NAND (SLC)	80Gbit	UFS3.1	-	-	-	-	-40°C ~ 85°C	Surface Mount	153-TFBGA	153-BGA (11.5x13)
5962-8854102FA	Advanced Micro Devices	IC PROM 2KBIT PARALLEL 16CFP Memory Type: Non-Volatile Memory Format: PROM Technology: - Memory Size: 2Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 60 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -55°C ~ 125°C (TC) Mounting Type: Surface Mount Package / Case: 16-CFlatPack Supplier Device Package: 16-CFP	패키지: -	Request a Quote	PROM	-	2Kbit	Parallel	-	-	60 ns	4.5V ~ 5.5V	-55°C ~ 125°C (TC)	Surface Mount	16-CFlatPack	16-CFP
N25Q064A13EF8A0F	Alliance Memory, Inc.	IC FLASH 64MBIT SPI 8VDFPN Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mbit Memory Interface: SPI Clock Frequency: 108 MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-VDFPN (MLP8) (8x6)	패키지: -	Request a Quote	FLASH	FLASH - NOR	64Mbit	SPI	108 MHz	5ms	-	2.7V ~ 3.6V	-40°C ~ 125°C (TA)	Surface Mount	8-VDFN Exposed Pad	8-VDFPN (MLP8) (8x6)
NM24C05UN	Fairchild Semiconductor	IC EEPROM 4KBIT I2C 100KHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kbit Memory Interface: I2C Clock Frequency: 100 kHz Write Cycle Time - Word, Page: 10ms Access Time: 3.5 µs Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP	패키지: -	Request a Quote	EEPROM	EEPROM	4Kbit	I2C	100 kHz	10ms	3.5 µs	4.5V ~ 5.5V	0°C ~ 70°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-DIP
MR25H128ACDF	Everspin Technologies Inc.	IC RAM 128KBIT SPI 40MHZ 8DFN Memory Type: Non-Volatile Memory Format: RAM Technology: MRAM (Magnetoresistive RAM) Memory Size: 128Kbit Memory Interface: SPI Clock Frequency: 40 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-DFN-EP, Small Flag (5x6)	패키지: -	재고3,885	RAM	MRAM (Magnetoresistive RAM)	128Kbit	SPI	40 MHz	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-VDFN Exposed Pad	8-DFN-EP, Small Flag (5x6)

MT53B4DBEZ-DC TR

Micron Technology Inc.

LPDDR4 32G 512MX64 FBGA QDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,336

-

IS49NLS18160-33BI

ISSI, Integrated Silicon Solution Inc

IC DRAM 288MBIT 300MHZ 144BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 288Mb (16M x 18)
Memory Interface: Parallel
Clock Frequency: 300MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 144-TFBGA
Supplier Device Package: 144-FCBGA (11x18.5)

패키지: 144-TFBGA

재고6,192

DRAM

288Mb (16M x 18)

Parallel

300MHz

-

20ns

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

144-TFBGA

144-FCBGA (11x18.5)

CY7C1413TV18-250BZC

Cypress Semiconductor Corp

IC SRAM 36MBIT 250MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 36Mb (2M x 18)
Memory Interface: Parallel
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

패키지: 165-LBGA

재고4,432

SRAM

SRAM - Synchronous, QDR II

36Mb (2M x 18)

Parallel

250MHz

-

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

CY7C1393BV18-250BZI

Cypress Semiconductor Corp

IC SRAM 18MBIT 250MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, DDR II
Memory Size: 18Mb (1M x 18)
Memory Interface: Parallel
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

패키지: 165-LBGA

재고4,144

SRAM

SRAM - Synchronous, DDR II

18Mb (1M x 18)

Parallel

250MHz

-

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

AT24C512BN-SH25-T

Microchip Technology

IC EEPROM 512KBIT 1MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 512Kb (64K x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 550ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고5,792

EEPROM

512Kb (64K x 8)

I2C

1MHz

5ms

550ns

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

AT28C64-12SC

Microchip Technology

IC EEPROM 64KBIT 120NS 28SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kb (8K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 1ms
Access Time: 120ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 28-SOIC

패키지: 28-SOIC (0.295", 7.50mm Width)

재고5,200

EEPROM

64Kb (8K x 8)

Parallel

-

1ms

120ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TC)

Surface Mount

28-SOIC (0.295", 7.50mm Width)

28-SOIC

70V3399S133BFI

IDT, Integrated Device Technology Inc

IC SRAM 2MBIT 133MHZ 208CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 2Mb (128K x 18)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 4.2ns
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 208-LFBGA
Supplier Device Package: 208-CABGA (15x15)

패키지: 208-LFBGA

재고2,100

SRAM

SRAM - Dual Port, Synchronous

2Mb (128K x 18)

Parallel

133MHz

-

4.2ns

3.15 V ~ 3.45 V

-40°C ~ 85°C (TA)

Surface Mount

208-LFBGA

208-CABGA (15x15)

CY7C1268KV18-400BZXC

Cypress Semiconductor Corp

IC SRAM 36MBIT 400MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, DDR II+
Memory Size: 36Mb (2M x 18)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

패키지: 165-LBGA

재고7,232

SRAM

SRAM - Synchronous, DDR II+

36Mb (2M x 18)

Parallel

400MHz

-

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

CY7C1441KV25-133BZXIT

Cypress Semiconductor Corp

IC SRAM 36MBIT 133MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 36Mb (1M x 36)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 6.5ns
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (15x17)

패키지: 165-LBGA

재고4,848

SRAM

SRAM - Synchronous

36Mb (1M x 36)

Parallel

133MHz

-

6.5ns

2.375 V ~ 2.625 V

-40°C ~ 85°C (TA)

Surface Mount

165-LBGA

165-FBGA (15x17)

MT53B384M64D4TX-053 WT ES:B TR

Micron Technology Inc.

IC SDRAM 24GBIT 1.8GHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 24Gb (384M x 64)
Memory Interface: -
Clock Frequency: 1866MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,632

DRAM

SDRAM - Mobile LPDDR4

24Gb (384M x 64)

-

1866MHz

-

1.1V

-30°C ~ 85°C (TC)

-

709089L15PF8

IDT, Integrated Device Technology Inc

IC SRAM 512KBIT 15NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 512Kb (64K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 15ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: 100-LQFP

재고2,208

SRAM

SRAM - Dual Port, Synchronous

512Kb (64K x 8)

Parallel

-

15ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

7164L70TDB

IDT, Integrated Device Technology Inc

IC SRAM 64KBIT 70NS 28CDIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 64Kb (8K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 28-CDIP (0.300", 7.62mm)
Supplier Device Package: 28-CDIP

패키지: 28-CDIP (0.300", 7.62mm)

재고4,624

SRAM

SRAM - Asynchronous

64Kb (8K x 8)

Parallel

-

70ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

28-CDIP (0.300", 7.62mm)

28-CDIP

MT29F256G08CBHBBJ4-3RES:B TR

Micron Technology Inc.

IC FLASH 256GBIT 333MHZ 132VBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 256Gb (32G x 8)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,952

FLASH

FLASH - NAND

256Gb (32G x 8)

Parallel

333MHz

-

2.5 V ~ 3.6 V

0°C ~ 70°C (TA)

-

IS61LP6432A-133TQ

ISSI, Integrated Silicon Solution Inc

IC SRAM 2MBIT 133MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 2Mb (64K x 32)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 4ns
Voltage - Supply: 3.135 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

패키지: 100-LQFP

재고7,632

SRAM

SRAM - Synchronous

2Mb (64K x 32)

Parallel

133MHz

-

4ns

3.135 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

MT25QU512ABB8E12-1SIT TR

Micron Technology Inc.

IC FLASH 512MBIT 133MHZ 24TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (64M x 8)
Memory Interface: SPI
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 8ms, 2.8ms
Access Time: -
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,416

FLASH

FLASH - NOR

512Mb (64M x 8)

SPI

133MHz

8ms, 2.8ms

-

1.7 V ~ 2 V

-40°C ~ 85°C (TA)

-

MX25U8033EBAI-12G

Macronix

IC FLASH 8MBIT 80MHZ 8WLCSP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mb (1M x 8)
Memory Interface: SPI
Clock Frequency: 80MHz
Write Cycle Time - Word, Page: 30µs, 3ms
Access Time: -
Voltage - Supply: 1.65 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-XFBGA, WLCSP
Supplier Device Package: 8-WLCSP

패키지: 8-XFBGA, WLCSP

재고2,496

FLASH

FLASH - NOR

8Mb (1M x 8)

SPI

80MHz

30µs, 3ms

-

1.65 V ~ 2 V

-40°C ~ 85°C (TA)

Surface Mount

8-XFBGA, WLCSP

8-WLCSP

AT45DB081D-SU SL955-AD

Adesto Technologies

DATA FLASH

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 8Mb (256 Bytes x 4096 pages)
Memory Interface: SPI
Clock Frequency: 66MHz
Write Cycle Time - Word, Page: 4ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고4,032

FLASH

8Mb (256 Bytes x 4096 pages)

SPI

66MHz

4ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

S25FL512SAGBHI213

Cypress Semiconductor Corp

IC FLASH 512M SPI 133MHZ 24BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (64M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-BGA (8x6)

패키지: 24-TBGA

재고6,000

FLASH

FLASH - NOR

512Mb (64M x 8)

SPI - Quad I/O

133MHz

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

24-TBGA

24-BGA (8x6)

IS61NVF102418-7.5B3I

ISSI, Integrated Silicon Solution Inc

IC SRAM 18M PARALLEL 165TFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (1M x 18)
Memory Interface: Parallel
Clock Frequency: 117MHz
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-TFBGA (13x15)

패키지: 165-TBGA

재고6,352

SRAM

SRAM - Synchronous

18Mb (1M x 18)

Parallel

117MHz

-

7.5ns

2.375 V ~ 2.625 V

-40°C ~ 85°C (TA)

Surface Mount

165-TBGA

165-TFBGA (13x15)

IS61LPS51236A-200B3I-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 18M PARALLEL 165TFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (512K x 36)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3.1ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-TFBGA (13x15)

패키지: 165-TBGA

재고4,000

SRAM

SRAM - Synchronous

18Mb (512K x 36)

Parallel

200MHz

-

3.1ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

165-TBGA

165-TFBGA (13x15)

S28HL01GTFPBHV033

Infineon Technologies

IC FLASH 1GBIT SPI/OCTAL 24FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 1Gbit
Memory Interface: SPI - Octal I/O
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 1.7ms
Access Time: 6.5 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-FBGA (8x8)

패키지: -

Request a Quote

FLASH

FLASH - NOR (SLC)

1Gbit

SPI - Octal I/O

166 MHz

1.7ms

6.5 ns

2.7V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

24-VBGA

24-FBGA (8x8)

MT58L128L32P1F-10

Micron Technology Inc.

IC SRAM 4MBIT PAR 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Standard
Memory Size: 4Mbit
Memory Interface: Parallel
Clock Frequency: 100 MHz
Write Cycle Time - Word, Page: -
Access Time: 5 ns
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-FBGA (13x15)

패키지: -

Request a Quote

SRAM

SRAM - Standard

4Mbit

Parallel

100 MHz

-

5 ns

3.135V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

165-TBGA

165-FBGA (13x15)

W25Q128FVSBQ

Winbond Electronics

IC FLASH 8SOIC

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

패키지: -

Request a Quote

-

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

SM671PEB-ADSS

Silicon Motion, Inc.

IC FLASH 80GBIT UFS3.1 153BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 80Gbit
Memory Interface: UFS3.1
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 153-TFBGA
Supplier Device Package: 153-BGA (11.5x13)

패키지: -

Request a Quote

FLASH

FLASH - NAND (SLC)

80Gbit

UFS3.1

-

-40°C ~ 85°C

Surface Mount

153-TFBGA

153-BGA (11.5x13)

5962-8854102FA

Advanced Micro Devices

IC PROM 2KBIT PARALLEL 16CFP

Memory Type: Non-Volatile
Memory Format: PROM
Technology: -
Memory Size: 2Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 60 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TC)
Mounting Type: Surface Mount
Package / Case: 16-CFlatPack
Supplier Device Package: 16-CFP

패키지: -

Request a Quote

PROM

-

2Kbit

Parallel

-

60 ns

4.5V ~ 5.5V

-55°C ~ 125°C (TC)

Surface Mount

16-CFlatPack

16-CFP

N25Q064A13EF8A0F

Alliance Memory, Inc.

IC FLASH 64MBIT SPI 8VDFPN

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mbit
Memory Interface: SPI
Clock Frequency: 108 MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-VDFPN (MLP8) (8x6)

패키지: -

Request a Quote

FLASH

FLASH - NOR

64Mbit

SPI

108 MHz

5ms

-

2.7V ~ 3.6V

-40°C ~ 125°C (TA)

Surface Mount

8-VDFN Exposed Pad

8-VDFPN (MLP8) (8x6)

NM24C05UN

Fairchild Semiconductor

IC EEPROM 4KBIT I2C 100KHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kbit
Memory Interface: I2C
Clock Frequency: 100 kHz
Write Cycle Time - Word, Page: 10ms
Access Time: 3.5 µs
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-DIP

패키지: -

Request a Quote

EEPROM

4Kbit

I2C

100 kHz

10ms

3.5 µs

4.5V ~ 5.5V

0°C ~ 70°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-DIP

MR25H128ACDF

Everspin Technologies Inc.

IC RAM 128KBIT SPI 40MHZ 8DFN

Memory Type: Non-Volatile
Memory Format: RAM
Technology: MRAM (Magnetoresistive RAM)
Memory Size: 128Kbit
Memory Interface: SPI
Clock Frequency: 40 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-DFN-EP, Small Flag (5x6)

패키지: -

재고3,885

RAM

MRAM (Magnetoresistive RAM)

128Kbit

SPI

40 MHz

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-VDFN Exposed Pad

8-DFN-EP, Small Flag (5x6)