페이지 106 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AT45DB041D-SSU-SL955	Adesto Technologies	IC FLASH 4MBIT 66MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 4Mb (256 Bytes x 2048 pages) Memory Interface: SPI Clock Frequency: 66MHz Write Cycle Time - Word, Page: 4ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고2,240	FLASH	FLASH	4Mb (256 Bytes x 2048 pages)	SPI	66MHz	4ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
MT47H256M8EB-187E:C	Micron Technology Inc.	IC SDRAM 2GBIT 533MHZ 60FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: 15ns Access Time: 350ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-FBGA (9x11.5)	패키지: 60-TFBGA	재고12,720	DRAM	SDRAM - DDR2	2Gb (256M x 8)	Parallel	533MHz	15ns	350ps	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	Surface Mount	60-TFBGA	60-FBGA (9x11.5)
IDT71T75702S85BG	IDT, Integrated Device Technology Inc	IC SRAM 18MBIT 8.5NS 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 18Mb (512K x 36) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 8.5ns Voltage - Supply: 2.375 V ~ 2.625 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	패키지: 119-BGA	재고5,744	SRAM	SRAM - Synchronous ZBT	18Mb (512K x 36)	Parallel	-	-	8.5ns	2.375 V ~ 2.625 V	0°C ~ 70°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
IS62WV1288BLL-55TI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 1MBIT 55NS 32TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 2.5 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 32-TSOP I	패키지: 32-TFSOP (0.724", 18.40mm Width)	재고5,184	SRAM	SRAM - Asynchronous	1Mb (128K x 8)	Parallel	-	55ns	55ns	2.5 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	32-TFSOP (0.724", 18.40mm Width)	32-TSOP I
AT28HC256F-90JI	Microchip Technology	IC EEPROM 256KBIT 90NS 32PLCC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 3ms Access Time: 90ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	패키지: 32-LCC (J-Lead)	재고5,568	EEPROM	EEPROM	256Kb (32K x 8)	Parallel	-	3ms	90ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Surface Mount	32-LCC (J-Lead)	32-PLCC
709159L6PF8	IDT, Integrated Device Technology Inc	IC SRAM 72KBIT 6NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 72Kb (8K x 9) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 6ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: 100-LQFP	재고3,728	SRAM	SRAM - Dual Port, Synchronous	72Kb (8K x 9)	Parallel	-	-	6ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
CY62157ELL-55BVXET	Cypress Semiconductor Corp	IC SRAM 8MBIT 55NS 48VFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 8Mb (512K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 48-VFBGA Supplier Device Package: 48-VFBGA (6x8)	패키지: 48-VFBGA	재고7,008	SRAM	SRAM - Asynchronous	8Mb (512K x 16)	Parallel	-	55ns	55ns	4.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	48-VFBGA	48-VFBGA (6x8)
MT41K256M8DA-107:K	Micron Technology Inc.	IC SDRAM 2GBIT 933MHZ 78FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (8x10.5)	패키지: 78-TFBGA	재고4,464	DRAM	SDRAM - DDR3L	2Gb (256M x 8)	Parallel	933MHz	-	20ns	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-FBGA (8x10.5)
71V256SA12YGI	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT 12NS 28SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 28-BSOJ (0.300", 7.62mm Width) Supplier Device Package: 28-SOJ	패키지: 28-BSOJ (0.300", 7.62mm Width)	재고5,648	SRAM	SRAM - Asynchronous	256Kb (32K x 8)	Parallel	-	12ns	12ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	28-BSOJ (0.300", 7.62mm Width)	28-SOJ
AT45DB161E-UUF2B-T	Adesto Technologies	IC FLASH 16MBIT 85MHZ 11WLCSP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 16Mb (512 Bytes x 4096 pages) Memory Interface: SPI Clock Frequency: 85MHz Write Cycle Time - Word, Page: 8µs, 4ms Access Time: - Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 11-UFBGA, WLCSP Supplier Device Package: 11-WLCSP	패키지: 11-UFBGA, WLCSP	재고5,568	FLASH	FLASH	16Mb (512 Bytes x 4096 pages)	SPI	85MHz	8µs, 4ms	-	2.3 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	11-UFBGA, WLCSP	11-WLCSP
S25FL164K0XMFV010	Cypress Semiconductor Corp	IC FLASH 64MBIT 108MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 108MHz Write Cycle Time - Word, Page: 3ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.209", 5.30mm Width)	재고2,304	FLASH	FLASH - NOR	64Mb (8M x 8)	SPI - Quad I/O	108MHz	3ms	-	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SO
93LC86CT-E/SN	Microchip Technology	IC EEPROM 16KBIT 3MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8, 1K x 16) Memory Interface: SPI Clock Frequency: 3MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고2,144	EEPROM	EEPROM	16Kb (2K x 8, 1K x 16)	SPI	3MHz	5ms	-	2.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
24LC32AFT-I/MNY	Microchip Technology	IC EEPROM 32KBIT 400KHZ 8TDFN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 32Kb (4K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WFDFN Exposed Pad Supplier Device Package: 8-TDFN (2x3)	패키지: 8-WFDFN Exposed Pad	재고7,008	EEPROM	EEPROM	32Kb (4K x 8)	I2C	400kHz	5ms	900ns	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-WFDFN Exposed Pad	8-TDFN (2x3)
24LC014HT-E/SN	Microchip Technology	IC EEPROM 1KBIT 400KHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 400ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고6,080	EEPROM	EEPROM	1Kb (128 x 8)	I2C	1MHz	5ms	400ns	2.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
S-25C080A0I-K8T3U	SII Semiconductor Corporation	IC EEPROM 8KBIT 5MHZ 8MSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kb (1K x 8) Memory Interface: SPI Clock Frequency: 5MHz Write Cycle Time - Word, Page: 4ms Access Time: - Voltage - Supply: 1.6 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WSSOP, 8-MSOP (0.110", 2.80mm Width) Supplier Device Package: 8-TMSOP	패키지: 8-WSSOP, 8-MSOP (0.110", 2.80mm Width)	재고4,832	EEPROM	EEPROM	8Kb (1K x 8)	SPI	5MHz	4ms	-	1.6 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-WSSOP, 8-MSOP (0.110", 2.80mm Width)	8-TMSOP
MT29F8G08ABABAWP:B TR	Micron Technology Inc.	IC FLASH 8GBIT 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 8Gb (1G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	패키지: 48-TFSOP (0.724", 18.40mm Width)	재고3,072	FLASH	FLASH - NAND	8Gb (1G x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
CY7C1312KV18-250BZC	Cypress Semiconductor Corp	IC SRAM 18MBIT 250MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II Memory Size: 18Mb (1M x 18) Memory Interface: Parallel Clock Frequency: 250MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	패키지: 165-LBGA	재고18,696	SRAM	SRAM - Synchronous, QDR II	18Mb (1M x 18)	Parallel	250MHz	-	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
CY7C1041G30-10ZSXI	Cypress Semiconductor Corp	IC SRAM 4MBIT 10NS 44TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 2.2 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	패키지: 44-TSOP (0.400", 10.16mm Width)	재고4,384	SRAM	SRAM - Asynchronous	4Mb (256K x 16)	Parallel	-	10ns	10ns	2.2 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
S25FL512SAGMFVR13	Cypress Semiconductor Corp	IC FLASH 512M SPI 133MHZ 16SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (64M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	패키지: 16-SOIC (0.295", 7.50mm Width)	재고6,464	FLASH	FLASH - NOR	512Mb (64M x 8)	SPI - Quad I/O	133MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
S29XS256RABBHW010	Cypress Semiconductor Corp	IC NOR Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,456	-	-	-	-	-	-	-	-	-	-	-	-
IS46LD32128C-25BPLA2	ISSI, Integrated Silicon Solution Inc	IC DRAM 4GBIT HSUL 12 168VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 4Gbit Memory Interface: HSUL_12 Clock Frequency: 400 MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.5 ns Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 168-VFBGA Supplier Device Package: 168-VFBGA (12x12)	패키지: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR2	4Gbit	HSUL_12	400 MHz	15ns	5.5 ns	1.14V ~ 1.3V, 1.7V ~ 1.95V	-40°C ~ 105°C (TC)	Surface Mount	168-VFBGA	168-VFBGA (12x12)
W947D6HKB-5J-TR	Winbond Electronics	IC DRAM 128MBIT PARALLEL 54VFBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
04368CBLBB-28	IBM	IC SRAM 8MBIT Memory Type: - Memory Format: SRAM Technology: - Memory Size: 8Mbit Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	SRAM	-	8Mbit	-	-	-	-	-	-	Surface Mount	-	-
MT60B1G16HC-52B-IT-G	Micron Technology Inc.	DDR5 16G 1GX16 FBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT53E768M32D4DE-046-WT-E-TR	Micron Technology Inc.	LPDDR4 24G 768MX32 FBGA QDP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 24Gbit Memory Interface: Parallel Clock Frequency: 2.133 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.5 ns Voltage - Supply: 1.06V ~ 1.17V Operating Temperature: -25°C ~ 85°C Mounting Type: Surface Mount Package / Case: 200-TFBGA Supplier Device Package: 200-TFBGA (10x14.5)	패키지: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4	24Gbit	Parallel	2.133 GHz	18ns	3.5 ns	1.06V ~ 1.17V	-25°C ~ 85°C	Surface Mount	200-TFBGA	200-TFBGA (10x14.5)
W66BM6NBUAFJ-TR	Winbond Electronics	IC DRAM 2GBIT LVSTL 11 200WFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4X Memory Size: 2Gbit Memory Interface: LVSTL_11 Clock Frequency: 1.6 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.5 ns Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 200-WFBGA Supplier Device Package: 200-WFBGA (10x14.5)	패키지: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4X	2Gbit	LVSTL_11	1.6 GHz	18ns	3.5 ns	1.06V ~ 1.17V, 1.7V ~ 1.95V	-40°C ~ 105°C (TC)	Surface Mount	200-WFBGA	200-WFBGA (10x14.5)
W25Q64JVZPAQ	Winbond Electronics	IC FLASH 64MBIT SPI/QUAD 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 3ms Access Time: 6 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x5)	패키지: -	Request a Quote	FLASH	FLASH - NOR	64Mbit	SPI - Quad I/O	133 MHz	3ms	6 ns	2.7V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x5)
MT29F8G08ABACAH4-AUT-C-TR	Micron Technology Inc.	NAND FLASH PLASTIC M71M Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

AT45DB041D-SSU-SL955

Adesto Technologies

IC FLASH 4MBIT 66MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (256 Bytes x 2048 pages)
Memory Interface: SPI
Clock Frequency: 66MHz
Write Cycle Time - Word, Page: 4ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고2,240

FLASH

4Mb (256 Bytes x 2048 pages)

SPI

66MHz

4ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

MT47H256M8EB-187E:C

Micron Technology Inc.

IC SDRAM 2GBIT 533MHZ 60FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 2Gb (256M x 8)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 350ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-FBGA (9x11.5)

패키지: 60-TFBGA

재고12,720

DRAM

SDRAM - DDR2

2Gb (256M x 8)

Parallel

533MHz

15ns

350ps

1.7 V ~ 1.9 V

0°C ~ 85°C (TC)

Surface Mount

60-TFBGA

60-FBGA (9x11.5)

IDT71T75702S85BG

IDT, Integrated Device Technology Inc

IC SRAM 18MBIT 8.5NS 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 18Mb (512K x 36)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 8.5ns
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

패키지: 119-BGA

재고5,744

SRAM

SRAM - Synchronous ZBT

18Mb (512K x 36)

Parallel

-

8.5ns

2.375 V ~ 2.625 V

0°C ~ 70°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

IS62WV1288BLL-55TI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 1MBIT 55NS 32TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP I

패키지: 32-TFSOP (0.724", 18.40mm Width)

재고5,184

SRAM

SRAM - Asynchronous

1Mb (128K x 8)

Parallel

-

55ns

2.5 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

32-TFSOP (0.724", 18.40mm Width)

32-TSOP I

AT28HC256F-90JI

Microchip Technology

IC EEPROM 256KBIT 90NS 32PLCC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 3ms
Access Time: 90ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC

패키지: 32-LCC (J-Lead)

재고5,568

EEPROM

256Kb (32K x 8)

Parallel

-

3ms

90ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Surface Mount

32-LCC (J-Lead)

32-PLCC

709159L6PF8

IDT, Integrated Device Technology Inc

IC SRAM 72KBIT 6NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 72Kb (8K x 9)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 6ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: 100-LQFP

재고3,728

SRAM

SRAM - Dual Port, Synchronous

72Kb (8K x 9)

Parallel

-

6ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

CY62157ELL-55BVXET

Cypress Semiconductor Corp

IC SRAM 8MBIT 55NS 48VFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 8Mb (512K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-VFBGA (6x8)

패키지: 48-VFBGA

재고7,008

SRAM

SRAM - Asynchronous

8Mb (512K x 16)

Parallel

-

55ns

4.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

48-VFBGA

48-VFBGA (6x8)

MT41K256M8DA-107:K

Micron Technology Inc.

IC SDRAM 2GBIT 933MHZ 78FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 2Gb (256M x 8)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (8x10.5)

패키지: 78-TFBGA

재고4,464

DRAM

SDRAM - DDR3L

2Gb (256M x 8)

Parallel

933MHz

-

20ns

1.283 V ~ 1.45 V

0°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-FBGA (8x10.5)

71V256SA12YGI

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 12NS 28SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Supplier Device Package: 28-SOJ

패키지: 28-BSOJ (0.300", 7.62mm Width)

재고5,648

SRAM

SRAM - Asynchronous

256Kb (32K x 8)

Parallel

-

12ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

28-BSOJ (0.300", 7.62mm Width)

28-SOJ

AT45DB161E-UUF2B-T

Adesto Technologies

IC FLASH 16MBIT 85MHZ 11WLCSP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 16Mb (512 Bytes x 4096 pages)
Memory Interface: SPI
Clock Frequency: 85MHz
Write Cycle Time - Word, Page: 8µs, 4ms
Access Time: -
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 11-UFBGA, WLCSP
Supplier Device Package: 11-WLCSP

패키지: 11-UFBGA, WLCSP

재고5,568

FLASH

16Mb (512 Bytes x 4096 pages)

SPI

85MHz

8µs, 4ms

-

2.3 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

11-UFBGA, WLCSP

11-WLCSP

S25FL164K0XMFV010

Cypress Semiconductor Corp

IC FLASH 64MBIT 108MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 3ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.209", 5.30mm Width)

재고2,304

FLASH

FLASH - NOR

64Mb (8M x 8)

SPI - Quad I/O

108MHz

3ms

-

2.7 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SO

93LC86CT-E/SN

Microchip Technology

IC EEPROM 16KBIT 3MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8, 1K x 16)
Memory Interface: SPI
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고2,144

EEPROM

16Kb (2K x 8, 1K x 16)

SPI

3MHz

5ms

-

2.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

24LC32AFT-I/MNY

Microchip Technology

IC EEPROM 32KBIT 400KHZ 8TDFN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 32Kb (4K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WFDFN Exposed Pad
Supplier Device Package: 8-TDFN (2x3)

패키지: 8-WFDFN Exposed Pad

재고7,008

EEPROM

32Kb (4K x 8)

I2C

400kHz

5ms

900ns

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-WFDFN Exposed Pad

8-TDFN (2x3)

24LC014HT-E/SN

Microchip Technology

IC EEPROM 1KBIT 400KHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 400ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고6,080

EEPROM

1Kb (128 x 8)

I2C

1MHz

5ms

400ns

2.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

S-25C080A0I-K8T3U

SII Semiconductor Corporation

IC EEPROM 8KBIT 5MHZ 8MSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kb (1K x 8)
Memory Interface: SPI
Clock Frequency: 5MHz
Write Cycle Time - Word, Page: 4ms
Access Time: -
Voltage - Supply: 1.6 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WSSOP, 8-MSOP (0.110", 2.80mm Width)
Supplier Device Package: 8-TMSOP

패키지: 8-WSSOP, 8-MSOP (0.110", 2.80mm Width)

재고4,832

EEPROM

8Kb (1K x 8)

SPI

5MHz

4ms

-

1.6 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-WSSOP, 8-MSOP (0.110", 2.80mm Width)

8-TMSOP

MT29F8G08ABABAWP:B TR

Micron Technology Inc.

IC FLASH 8GBIT 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 8Gb (1G x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

패키지: 48-TFSOP (0.724", 18.40mm Width)

재고3,072

FLASH

FLASH - NAND

8Gb (1G x 8)

Parallel

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I

CY7C1312KV18-250BZC

Cypress Semiconductor Corp

IC SRAM 18MBIT 250MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 18Mb (1M x 18)
Memory Interface: Parallel
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

패키지: 165-LBGA

재고18,696

SRAM

SRAM - Synchronous, QDR II

18Mb (1M x 18)

Parallel

250MHz

-

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

CY7C1041G30-10ZSXI

Cypress Semiconductor Corp

IC SRAM 4MBIT 10NS 44TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 2.2 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

패키지: 44-TSOP (0.400", 10.16mm Width)

재고4,384

SRAM

SRAM - Asynchronous

4Mb (256K x 16)

Parallel

-

10ns

2.2 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

S25FL512SAGMFVR13

Cypress Semiconductor Corp

IC FLASH 512M SPI 133MHZ 16SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (64M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

패키지: 16-SOIC (0.295", 7.50mm Width)

재고6,464

FLASH

FLASH - NOR

512Mb (64M x 8)

SPI - Quad I/O

133MHz

-

2.7 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

S29XS256RABBHW010

Cypress Semiconductor Corp

IC NOR

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,456

-

IS46LD32128C-25BPLA2

ISSI, Integrated Silicon Solution Inc

IC DRAM 4GBIT HSUL 12 168VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 4Gbit
Memory Interface: HSUL_12
Clock Frequency: 400 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.5 ns
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 168-VFBGA
Supplier Device Package: 168-VFBGA (12x12)

패키지: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR2

4Gbit

HSUL_12

400 MHz

15ns

5.5 ns

1.14V ~ 1.3V, 1.7V ~ 1.95V

-40°C ~ 105°C (TC)

Surface Mount

168-VFBGA

168-VFBGA (12x12)

W947D6HKB-5J-TR

Winbond Electronics

IC DRAM 128MBIT PARALLEL 54VFBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

04368CBLBB-28

IBM

IC SRAM 8MBIT

Memory Type: -
Memory Format: SRAM
Technology: -
Memory Size: 8Mbit
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

SRAM

-

8Mbit

-

Surface Mount

-

MT60B1G16HC-52B-IT-G

Micron Technology Inc.

DDR5 16G 1GX16 FBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

MT53E768M32D4DE-046-WT-E-TR

Micron Technology Inc.

LPDDR4 24G 768MX32 FBGA QDP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 24Gbit
Memory Interface: Parallel
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.5 ns
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -25°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Supplier Device Package: 200-TFBGA (10x14.5)

패키지: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR4

24Gbit

Parallel

2.133 GHz

18ns

3.5 ns

1.06V ~ 1.17V

-25°C ~ 85°C

Surface Mount

200-TFBGA

200-TFBGA (10x14.5)

W66BM6NBUAFJ-TR

Winbond Electronics

IC DRAM 2GBIT LVSTL 11 200WFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4X
Memory Size: 2Gbit
Memory Interface: LVSTL_11
Clock Frequency: 1.6 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.5 ns
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-WFBGA
Supplier Device Package: 200-WFBGA (10x14.5)

패키지: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR4X

2Gbit

LVSTL_11

1.6 GHz

18ns

3.5 ns

1.06V ~ 1.17V, 1.7V ~ 1.95V

-40°C ~ 105°C (TC)

Surface Mount

200-WFBGA

200-WFBGA (10x14.5)

W25Q64JVZPAQ

Winbond Electronics

IC FLASH 64MBIT SPI/QUAD 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 3ms
Access Time: 6 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x5)

패키지: -

Request a Quote

FLASH

FLASH - NOR

64Mbit

SPI - Quad I/O

133 MHz

3ms

6 ns

2.7V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (6x5)

MT29F8G08ABACAH4-AUT-C-TR

Micron Technology Inc.

NAND FLASH PLASTIC M71M

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-