페이지 1079 - 메모리 | 집적 회로(IC) | Heisener Electronics
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이미지
부품 번호
제조업체
설명
패키지
재고
수량
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
W632GG6AB-15
Winbond Electronics

IC SDRAM 2GBIT 96WBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 2Gb (128M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 667MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 20ns
  • Voltage - Supply: 1.425 V ~ 1.575 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,712
DRAM
SDRAM - DDR3
2Gb (128M x 16)
Parallel
667MHz
-
20ns
1.425 V ~ 1.575 V
0°C ~ 95°C (TC)
-
-
-
MT29F128G08CBCBBH6-6ITR:B
Micron Technology Inc.

IC FLASH 128GBIT 152VBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 128Gb (16G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,936
FLASH
FLASH - NAND
128Gb (16G x 8)
Parallel
166MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
-
-
-
IS43LR16160F-6BLI
ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 166MHZ 60BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile DDR
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5.5ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-TFBGA (8x10)
패키지: 60-TFBGA
재고4,336
DRAM
SDRAM - Mobile DDR
256Mb (16M x 16)
Parallel
166MHz
15ns
5.5ns
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
60-TFBGA
60-TFBGA (8x10)
CY7C1513JV18-300BZC
Cypress Semiconductor Corp

IC SRAM 72MBIT 300MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, QDR II
  • Memory Size: 72Mb (4M x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 300MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (15x17)
패키지: 165-LBGA
재고6,576
SRAM
SRAM - Synchronous, QDR II
72Mb (4M x 18)
Parallel
300MHz
-
-
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
165-LBGA
165-FBGA (15x17)
AT29C256-12JI-T
Microchip Technology

IC FLASH 256KBIT 120NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 120ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC (11.43x13.97)
패키지: 32-LCC (J-Lead)
재고4,688
FLASH
FLASH
256Kb (32K x 8)
Parallel
-
10ms
120ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC (11.43x13.97)
AT27LV040A-90VC
Microchip Technology

IC OTP 4MBIT 90NS 32VSOP

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 90ns
  • Voltage - Supply: 3 V ~ 3.6 V, 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-TFSOP (0.488", 12.40mm Width)
  • Supplier Device Package: 32-VSOP
패키지: 32-TFSOP (0.488", 12.40mm Width)
재고3,280
EPROM
EPROM - OTP
4Mb (512K x 8)
Parallel
-
-
90ns
3 V ~ 3.6 V, 4.5 V ~ 5.5 V
0°C ~ 70°C (TC)
Surface Mount
32-TFSOP (0.488", 12.40mm Width)
32-VSOP
AT25128-10PC-2.7
Microchip Technology

IC EEPROM 128KBIT 3MHZ 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 128Kb (16K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 3MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
패키지: 8-DIP (0.300", 7.62mm)
재고3,808
EEPROM
EEPROM
128Kb (16K x 8)
SPI
3MHz
5ms
-
2.7 V ~ 5.5 V
0°C ~ 70°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
70V06L20PF8
IDT, Integrated Device Technology Inc

IC SRAM 128KBIT 20NS 64TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 128Kb (16K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20ns
  • Access Time: 20ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-TQFP (14x14)
패키지: 64-LQFP
재고2,240
SRAM
SRAM - Dual Port, Asynchronous
128Kb (16K x 8)
Parallel
-
20ns
20ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
64-LQFP
64-TQFP (14x14)
IS61WV51216BLL-10MLI-TR
ISSI, Integrated Silicon Solution Inc

IC SRAM 8MBIT 10NS 48MINIBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 8Mb (512K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 2.4 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-miniBGA (9x11)
패키지: 48-TFBGA
재고5,952
SRAM
SRAM - Asynchronous
8Mb (512K x 16)
Parallel
-
10ns
10ns
2.4 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFBGA
48-miniBGA (9x11)
IS64LF12836EC-7.5B3LA3-TR
ISSI, Integrated Silicon Solution Inc

IC SRAM 4.5MBIT 7.5NS 165BGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 4.5Mb (128K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 117MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 7.5ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-TFBGA (13x15)
패키지: 165-TBGA
재고2,768
SRAM
SRAM - Synchronous
4.5Mb (128K x 36)
Parallel
117MHz
-
7.5ns
3.135 V ~ 3.465 V
-40°C ~ 125°C (TA)
Surface Mount
165-TBGA
165-TFBGA (13x15)
hot MT29F64G08CBABAWP:B
Micron Technology Inc.

IC FLASH 64GBIT 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 64Gb (8G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
패키지: 48-TFSOP (0.724", 18.40mm Width)
재고24,708
FLASH
FLASH - NAND
64Gb (8G x 8)
Parallel
-
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
71V3576S150PFGI
IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 150MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 4.5Mb (128K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 150MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.8ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP
패키지: 100-LQFP
재고7,200
SRAM
SRAM - Synchronous
4.5Mb (128K x 36)
Parallel
150MHz
-
3.8ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP
hot BR24G128NUX-3ATTR
Rohm Semiconductor

IC EEPROM 128KBIT 1MHZ 8VSON

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 128Kb (16K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UFDFN Exposed Pad
  • Supplier Device Package: VSON008X2030
패키지: 8-UFDFN Exposed Pad
재고192,000
EEPROM
EEPROM
128Kb (16K x 8)
I2C
1MHz
5ms
-
1.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-UFDFN Exposed Pad
VSON008X2030
24AA02HT-I/MNY
Microchip Technology

IC EEPROM 2KBIT 400KHZ 8TDFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WFDFN Exposed Pad
  • Supplier Device Package: 8-TDFN (2x3)
패키지: 8-WFDFN Exposed Pad
재고7,584
EEPROM
EEPROM
2Kb (256 x 8)
I2C
400kHz
5ms
900ns
1.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-WFDFN Exposed Pad
8-TDFN (2x3)
hot IS62WV102416DBLL-45TLI
ISSI, Integrated Silicon Solution Inc

IC SRAM 16MBIT 45NS 48TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45ns
  • Voltage - Supply: 2.2 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
패키지: 48-TFSOP (0.724", 18.40mm Width)
재고17,700
SRAM
SRAM - Asynchronous
16Mb (1M x 16)
Parallel
-
45ns
45ns
2.2 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
S29GL128P10TFI023
Cypress Semiconductor Corp

IC FLASH 128M PARALLEL 56TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (16M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 56-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 56-TSOP
패키지: 56-TFSOP (0.724", 18.40mm Width)
재고5,696
FLASH
FLASH - NOR
128Mb (16M x 8)
Parallel
-
100ns
100ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
56-TFSOP (0.724", 18.40mm Width)
56-TSOP
IS42S16800F-6B
ISSI, Integrated Silicon Solution Inc

IC DRAM 128M PARALLEL 166MHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 128Mb (8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C
  • Mounting Type: Surface Mount
  • Package / Case: 54-TFBGA
  • Supplier Device Package: 54-TFBGA (8x8)
패키지: 54-TFBGA
재고7,152
DRAM
SDRAM
128Mb (8M x 16)
Parallel
166MHz
-
5.4ns
3 V ~ 3.6 V
0°C ~ 70°C
Surface Mount
54-TFBGA
54-TFBGA (8x8)
IS61VPS51236A-250B3I-TR
ISSI, Integrated Silicon Solution Inc

IC SRAM 18M PARALLEL 165TFBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 18Mb (512K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 250MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 2.6ns
  • Voltage - Supply: 2.375 V ~ 2.625 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-TFBGA (13x15)
패키지: 165-TBGA
재고6,352
SRAM
SRAM - Synchronous
18Mb (512K x 36)
Parallel
250MHz
-
2.6ns
2.375 V ~ 2.625 V
-40°C ~ 85°C (TA)
Surface Mount
165-TBGA
165-TFBGA (13x15)
MTFC256GBAOANAM-WT TR
Micron Technology Inc.

IC FLASH 2T MMC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 2Tb (256G x 8)
  • Memory Interface: MMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -25°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고7,344
FLASH
FLASH - NAND
2Tb (256G x 8)
MMC
-
-
-
-
-25°C ~ 85°C (TA)
-
-
-
MT53E128M32D2DS-046 AAT:A TR
Micron Technology Inc.

IC DRAM LPDDR4 WFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 4Gb (128M x 32)
  • Memory Interface: -
  • Clock Frequency: 2.133GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 0.6V, 1.1V
  • Operating Temperature: -40°C ~ 105°C
  • Mounting Type: Surface Mount
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,504
DRAM
SDRAM - Mobile LPDDR4
4Gb (128M x 32)
-
2.133GHz
-
-
0.6V, 1.1V
-40°C ~ 105°C
Surface Mount
-
-
24FC02T-E/MS
Microchip Technology

2KB I2C EEPROM 1MHZ 1.7-5.5V 8-M

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: I²C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 450ns
  • Voltage - Supply: 1.7V ~ 5.5V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 8-MSOP
패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
재고4,624
EEPROM
EEPROM
2Kb (256 x 8)
I²C
1MHz
5ms
450ns
1.7V ~ 5.5V
-40°C ~ 125°C (TA)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
8-MSOP
MT58L256L36DS-10
Micron Technology Inc.

IC SRAM 8MBIT PAR 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 8Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 100 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5 ns
  • Voltage - Supply: 3.135V ~ 3.6V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20.1)
패키지: -
Request a Quote
SRAM
SRAM - Synchronous
8Mbit
Parallel
100 MHz
-
5 ns
3.135V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20.1)
EM6HC08EWUG-10H
Etron Technology, Inc.

IC DRAM 1GBIT PAR 78FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 1Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 933 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.283V ~ 1.45V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-VFBGA
  • Supplier Device Package: 78-FBGA (8x10.5)
패키지: -
Request a Quote
DRAM
SDRAM - DDR3L
1Gbit
Parallel
933 MHz
15ns
20 ns
1.283V ~ 1.45V
0°C ~ 95°C (TC)
Surface Mount
78-VFBGA
78-FBGA (8x10.5)
R1EX25064ATA00A-S0
Renesas Electronics Corporation

IC EEPROM 64KBIT SPI 5MHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 64Kbit
  • Memory Interface: SPI
  • Clock Frequency: 5 MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.8V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
패키지: -
Request a Quote
EEPROM
EEPROM
64Kbit
SPI
5 MHz
5ms
-
1.8V ~ 5.5V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
MT61A512M32KPA-12-AAT-E-TR
Micron Technology Inc.

GDDR6 16G 512MX32 FBGA DDP

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
CAT93C76BYI-GT3
onsemi

IC EEPROM 8KBIT MICROWIRE 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 8Kbit
  • Memory Interface: Microwire
  • Clock Frequency: 4 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.8V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
패키지: -
Request a Quote
EEPROM
EEPROM
8Kbit
Microwire
4 MHz
-
-
1.8V ~ 5.5V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
W29N04KWBIBG-TR
Winbond Electronics

IC FLASH 4GBIT ONFI 63VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 4Gbit
  • Memory Interface: ONFI
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 35ns, 700µs
  • Access Time: 25 ns
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 63-VFBGA
  • Supplier Device Package: 63-VFBGA (9x11)
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FLASH
FLASH - NAND (SLC)
4Gbit
ONFI
-
35ns, 700µs
25 ns
1.7V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
63-VFBGA
63-VFBGA (9x11)
CY7C195B-12VC
Cypress Semiconductor Corp

IC SRAM 256KBIT PARALLEL 24SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 256Kbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-BSOJ (0.300", 7.62mm Width)
  • Supplier Device Package: 24-SOJ
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SRAM
SRAM - Asynchronous
256Kbit
Parallel
-
12ns
12 ns
4.5V ~ 5.5V
0°C ~ 70°C (TA)
Surface Mount
24-BSOJ (0.300", 7.62mm Width)
24-SOJ