페이지 1083 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
S25FL064LABNFB010	Cypress Semiconductor Corp	IC FLASH NOR 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8) Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 108MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,240	FLASH	FLASH - NOR	64Mb (8M x 8)	SPI - Quad I/O, QPI	108MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	-	-	-
M25PE20-V6D11	Micron Technology Inc.	IC FLASH SER NOR SLC 2M DIE Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 2Mb (256K x 8) Memory Interface: SPI Clock Frequency: 75MHz Write Cycle Time - Word, Page: 15ms, 3ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,776	FLASH	FLASH - NOR	2Mb (256K x 8)	SPI	75MHz	15ms, 3ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
IS42RM32400G-6BLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 128MBIT 166MHZ 90BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile Memory Size: 128Mb (4M x 32) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 5.5ns Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	패키지: 90-TFBGA	재고6,528	DRAM	SDRAM - Mobile	128Mb (4M x 32)	Parallel	166MHz	-	5.5ns	2.3 V ~ 2.7 V	-40°C ~ 85°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
IS49NLC93200-33BLI	ISSI, Integrated Silicon Solution Inc	IC DRAM 288MBIT 300MHZ 144BGA Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 288Mb (32M x 9) Memory Interface: Parallel Clock Frequency: 300MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 144-TFBGA Supplier Device Package: 144-FCBGA (11x18.5)	패키지: 144-TFBGA	재고2,976	DRAM	DRAM	288Mb (32M x 9)	Parallel	300MHz	-	20ns	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	144-TFBGA	144-FCBGA (11x18.5)
IS42S16320B-75ETL	ISSI, Integrated Silicon Solution Inc	IC SDRAM 512MBIT 133MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 5.5ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	패키지: 54-TSOP (0.400", 10.16mm Width)	재고2,096	DRAM	SDRAM	512Mb (32M x 16)	Parallel	133MHz	-	5.5ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
SST39WF400A-90-4C-B3KE	Microchip Technology	IC FLASH 4MBIT 90NS 48TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 4Mb (256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 40µs Access Time: 90ns Voltage - Supply: 1.65 V ~ 1.95 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-TFBGA	패키지: 48-TFBGA	재고114,108	FLASH	FLASH	4Mb (256K x 16)	Parallel	-	40µs	90ns	1.65 V ~ 1.95 V	0°C ~ 70°C (TA)	Surface Mount	48-TFBGA	48-TFBGA
IDT71P72604S167BQG8	IDT, Integrated Device Technology Inc	IC SRAM 18MBIT 167MHZ 165CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II Memory Size: 18Mb (512K x 36) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: 8.4ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-CABGA (13x15)	패키지: 165-TBGA	재고7,456	SRAM	SRAM - Synchronous, QDR II	18Mb (512K x 36)	Parallel	167MHz	-	8.4ns	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-TBGA	165-CABGA (13x15)
CY62136VNLL-55ZSXAT	Cypress Semiconductor Corp	IC SRAM 2MBIT 55NS 44TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 2Mb (128K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	패키지: 44-TSOP (0.400", 10.16mm Width)	재고2,256	SRAM	SRAM - Asynchronous	2Mb (128K x 16)	Parallel	-	55ns	55ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
IS61LPS204818B-200TQLI	ISSI, Integrated Silicon Solution Inc	IC SRAM 36MBIT 200MHZ 100LQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 36Mb (2M x 18) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3.1ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x20)	패키지: 100-LQFP	재고6,576	SRAM	SRAM - Synchronous	36Mb (2M x 18)	Parallel	200MHz	-	3.1ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-LQFP (14x20)
7025L20J	IDT, Integrated Device Technology Inc	IC SRAM 128KBIT 20NS 84PLCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 128Kb (8K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 84-LCC (J-Lead) Supplier Device Package: 84-PLCC (29.21x29.21)	패키지: 84-LCC (J-Lead)	재고7,424	SRAM	SRAM - Dual Port, Asynchronous	128Kb (8K x 16)	Parallel	-	20ns	20ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	84-LCC (J-Lead)	84-PLCC (29.21x29.21)
MTFC8GLVEA-WT TR	Micron Technology Inc.	IC FLASH 64GBIT 153WFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 64Gb (8G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 153-WFBGA Supplier Device Package: 153-WFBGA (11.5x13)	패키지: 153-WFBGA	재고5,536	FLASH	FLASH - NAND	64Gb (8G x 8)	MMC	-	-	-	2.7 V ~ 3.6 V	-25°C ~ 85°C (TA)	Surface Mount	153-WFBGA	153-WFBGA (11.5x13)
MT29F32G08CBCCBH1-12Z:C	Micron Technology Inc.	IC FLASH 32GBIT 83MHZ 100VBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 32Gb (4G x 8) Memory Interface: Parallel Clock Frequency: 83MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-VBGA Supplier Device Package: 100-VBGA (12x18)	패키지: 100-VBGA	재고3,312	FLASH	FLASH - NAND	32Gb (4G x 8)	Parallel	83MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	100-VBGA	100-VBGA (12x18)
IS64WV25616EDBLL-10BLA3-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 4MBIT 10NS 48TFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 2.4 V ~ 3.6 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-TFBGA (6x8)	패키지: 48-TFBGA	재고7,264	SRAM	SRAM - Asynchronous	4Mb (256K x 16)	Parallel	-	10ns	10ns	2.4 V ~ 3.6 V	-40°C ~ 125°C (TA)	Surface Mount	48-TFBGA	48-TFBGA (6x8)
71V3577S85BGI8	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 8.5NS 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 87MHz Write Cycle Time - Word, Page: - Access Time: 8.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	패키지: 119-BGA	재고6,928	SRAM	SRAM - Synchronous	4.5Mb (128K x 36)	Parallel	87MHz	-	8.5ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
IS64WV6416EEBLL-10CTLA3	ISSI, Integrated Silicon Solution Inc	IC SRAM 1MBIT 10NS 44TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (64K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 2.4 V ~ 3.6 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	패키지: 44-TSOP (0.400", 10.16mm Width)	재고2,336	SRAM	SRAM - Asynchronous	1Mb (64K x 16)	Parallel	-	10ns	10ns	2.4 V ~ 3.6 V	-40°C ~ 125°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
W25Q32JVDAIQ TR	Winbond Electronics	IC FLASH 32MBIT 133MHZ 8DIP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (4M x 8) Memory Interface: SPI Clock Frequency: 133MHz Write Cycle Time - Word, Page: 3ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	패키지: 8-DIP (0.300", 7.62mm)	재고5,232	FLASH	FLASH - NOR	32Mb (4M x 8)	SPI	133MHz	3ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-DIP (0.300", 7.62mm)	8-PDIP
25AA640A-E/ST	Microchip Technology	IC EEPROM 64KBIT 10MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64Kb (8K x 8) Memory Interface: SPI Clock Frequency: 10MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고2,160	EEPROM	EEPROM	64Kb (8K x 8)	SPI	10MHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
25AA080AT-I/ST	Microchip Technology	IC EEPROM 8KBIT 10MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kb (1K x 8) Memory Interface: SPI Clock Frequency: 10MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고26,316	EEPROM	EEPROM	8Kb (1K x 8)	SPI	10MHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
CY14B104NA-ZS45XI	Cypress Semiconductor Corp	IC NVSRAM 4MBIT 45NS 44TSOP Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 4Mb (256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	패키지: 44-TSOP (0.400", 10.16mm Width)	재고5,904	NVSRAM	NVSRAM (Non-Volatile SRAM)	4Mb (256K x 16)	Parallel	-	45ns	45ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
MT40A1G8SA-075:E	Micron Technology Inc.	IC DRAM 8G PARALLEL 1.33GHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 8Gb (1G x 8) Memory Interface: Parallel Clock Frequency: 1.33GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.26 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,416	DRAM	SDRAM - DDR4	8Gb (1G x 8)	Parallel	1.33GHz	-	-	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	-	-	-
S29GL064N90TFVR20	Cypress Semiconductor Corp	IC FLASH 64M PARALLEL 56TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8, 4M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 90ns Access Time: 90ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 56-TSOP	패키지: 56-TFSOP (0.724", 18.40mm Width)	재고4,608	FLASH	FLASH - NOR	64Mb (8M x 8, 4M x 16)	Parallel	-	90ns	90ns	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	56-TFSOP (0.724", 18.40mm Width)	56-TSOP
M29W160EB80ZA3SE	Micron Technology Inc.	IC FLASH 16M PARALLEL 48TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 16Mb (2M x 8, 1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 80ns Access Time: 80ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-TFBGA (6x8)	패키지: 48-TFBGA	재고6,672	FLASH	FLASH - NOR	16Mb (2M x 8, 1M x 16)	Parallel	-	80ns	80ns	2.7 V ~ 3.6 V	-40°C ~ 125°C (TA)	Surface Mount	48-TFBGA	48-TFBGA (6x8)
7005L55PFI	IDT, Integrated Device Technology Inc	IC SRAM 64K PARALLEL 64TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 64Kb (8K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-TQFP (14x14)	패키지: 64-LQFP	재고4,944	SRAM	SRAM - Dual Port, Asynchronous	64Kb (8K x 8)	Parallel	-	55ns	55ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	64-LQFP	64-TQFP (14x14)
MX25U2033FZUI	Macronix	IC FLASH 2M 8USON Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,232	-	-	-	-	-	-	-	-	-	-	-	-
25LC010A-E/SN16KVAO	Microchip Technology	1K 128X8 2.5V SER EE Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8) Memory Interface: SPI Clock Frequency: 10MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고5,520	EEPROM	EEPROM	1Kb (128 x 8)	SPI	10MHz	5ms	-	2.5V ~ 5.5V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
S25HS512TFANHI010	Infineon Technologies	IC FLASH 512MBIT SPI/QUAD 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 166 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x8)	패키지: -	재고7,635	FLASH	FLASH - NOR	512Mbit	SPI - Quad I/O	166 MHz	-	-	1.7V ~ 2V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
MT29F2G01ABBGDM79A3WC1L	Micron Technology Inc.	IC FLASH 2GBIT SPI DIE Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 2Gbit Memory Interface: SPI Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	FLASH	FLASH - NAND (SLC)	2Gbit	SPI	-	-	-	1.7V ~ 1.95V	0°C ~ 70°C (TA)	Surface Mount	Die	Die
99326-02831	Infineon Technologies	INFINEON Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

S25FL064LABNFB010

Cypress Semiconductor Corp

IC FLASH NOR 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8)
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,240

FLASH

FLASH - NOR

64Mb (8M x 8)

SPI - Quad I/O, QPI

108MHz

-

2.7 V ~ 3.6 V

-40°C ~ 105°C (TA)

-

M25PE20-V6D11

Micron Technology Inc.

IC FLASH SER NOR SLC 2M DIE

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 2Mb (256K x 8)
Memory Interface: SPI
Clock Frequency: 75MHz
Write Cycle Time - Word, Page: 15ms, 3ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,776

FLASH

FLASH - NOR

2Mb (256K x 8)

SPI

75MHz

15ms, 3ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

IS42RM32400G-6BLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 166MHZ 90BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile
Memory Size: 128Mb (4M x 32)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 5.5ns
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

패키지: 90-TFBGA

재고6,528

DRAM

SDRAM - Mobile

128Mb (4M x 32)

Parallel

166MHz

-

5.5ns

2.3 V ~ 2.7 V

-40°C ~ 85°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

IS49NLC93200-33BLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 288MBIT 300MHZ 144BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 288Mb (32M x 9)
Memory Interface: Parallel
Clock Frequency: 300MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 144-TFBGA
Supplier Device Package: 144-FCBGA (11x18.5)

패키지: 144-TFBGA

재고2,976

DRAM

288Mb (32M x 9)

Parallel

300MHz

-

20ns

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

144-TFBGA

144-FCBGA (11x18.5)

IS42S16320B-75ETL

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 133MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 5.5ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

패키지: 54-TSOP (0.400", 10.16mm Width)

재고2,096

DRAM

SDRAM

512Mb (32M x 16)

Parallel

133MHz

-

5.5ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

SST39WF400A-90-4C-B3KE

Microchip Technology

IC FLASH 4MBIT 90NS 48TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 40µs
Access Time: 90ns
Voltage - Supply: 1.65 V ~ 1.95 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA

패키지: 48-TFBGA

재고114,108

FLASH

4Mb (256K x 16)

Parallel

-

40µs

90ns

1.65 V ~ 1.95 V

0°C ~ 70°C (TA)

Surface Mount

48-TFBGA

IDT71P72604S167BQG8

IDT, Integrated Device Technology Inc

IC SRAM 18MBIT 167MHZ 165CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 18Mb (512K x 36)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: 8.4ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-CABGA (13x15)

패키지: 165-TBGA

재고7,456

SRAM

SRAM - Synchronous, QDR II

18Mb (512K x 36)

Parallel

167MHz

-

8.4ns

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-TBGA

165-CABGA (13x15)

CY62136VNLL-55ZSXAT

Cypress Semiconductor Corp

IC SRAM 2MBIT 55NS 44TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 2Mb (128K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

패키지: 44-TSOP (0.400", 10.16mm Width)

재고2,256

SRAM

SRAM - Asynchronous

2Mb (128K x 16)

Parallel

-

55ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

IS61LPS204818B-200TQLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 36MBIT 200MHZ 100LQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 36Mb (2M x 18)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3.1ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x20)

패키지: 100-LQFP

재고6,576

SRAM

SRAM - Synchronous

36Mb (2M x 18)

Parallel

200MHz

-

3.1ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-LQFP (14x20)

7025L20J

IDT, Integrated Device Technology Inc

IC SRAM 128KBIT 20NS 84PLCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 128Kb (8K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 84-LCC (J-Lead)
Supplier Device Package: 84-PLCC (29.21x29.21)

패키지: 84-LCC (J-Lead)

재고7,424

SRAM

SRAM - Dual Port, Asynchronous

128Kb (8K x 16)

Parallel

-

20ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

84-LCC (J-Lead)

84-PLCC (29.21x29.21)

MTFC8GLVEA-WT TR

Micron Technology Inc.

IC FLASH 64GBIT 153WFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 64Gb (8G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 153-WFBGA
Supplier Device Package: 153-WFBGA (11.5x13)

패키지: 153-WFBGA

재고5,536

FLASH

FLASH - NAND

64Gb (8G x 8)

MMC

-

2.7 V ~ 3.6 V

-25°C ~ 85°C (TA)

Surface Mount

153-WFBGA

153-WFBGA (11.5x13)

MT29F32G08CBCCBH1-12Z:C

Micron Technology Inc.

IC FLASH 32GBIT 83MHZ 100VBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 32Gb (4G x 8)
Memory Interface: Parallel
Clock Frequency: 83MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-VBGA
Supplier Device Package: 100-VBGA (12x18)

패키지: 100-VBGA

재고3,312

FLASH

FLASH - NAND

32Gb (4G x 8)

Parallel

83MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

100-VBGA

100-VBGA (12x18)

IS64WV25616EDBLL-10BLA3-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT 10NS 48TFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 2.4 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA (6x8)

패키지: 48-TFBGA

재고7,264

SRAM

SRAM - Asynchronous

4Mb (256K x 16)

Parallel

-

10ns

2.4 V ~ 3.6 V

-40°C ~ 125°C (TA)

Surface Mount

48-TFBGA

48-TFBGA (6x8)

71V3577S85BGI8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 8.5NS 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 87MHz
Write Cycle Time - Word, Page: -
Access Time: 8.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

패키지: 119-BGA

재고6,928

SRAM

SRAM - Synchronous

4.5Mb (128K x 36)

Parallel

87MHz

-

8.5ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

IS64WV6416EEBLL-10CTLA3

ISSI, Integrated Silicon Solution Inc

IC SRAM 1MBIT 10NS 44TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (64K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 2.4 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

패키지: 44-TSOP (0.400", 10.16mm Width)

재고2,336

SRAM

SRAM - Asynchronous

1Mb (64K x 16)

Parallel

-

10ns

2.4 V ~ 3.6 V

-40°C ~ 125°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

W25Q32JVDAIQ TR

Winbond Electronics

IC FLASH 32MBIT 133MHZ 8DIP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8)
Memory Interface: SPI
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 3ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

패키지: 8-DIP (0.300", 7.62mm)

재고5,232

FLASH

FLASH - NOR

32Mb (4M x 8)

SPI

133MHz

3ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-DIP (0.300", 7.62mm)

8-PDIP

25AA640A-E/ST

Microchip Technology

IC EEPROM 64KBIT 10MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kb (8K x 8)
Memory Interface: SPI
Clock Frequency: 10MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고2,160

EEPROM

64Kb (8K x 8)

SPI

10MHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

25AA080AT-I/ST

Microchip Technology

IC EEPROM 8KBIT 10MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kb (1K x 8)
Memory Interface: SPI
Clock Frequency: 10MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고26,316

EEPROM

8Kb (1K x 8)

SPI

10MHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

CY14B104NA-ZS45XI

Cypress Semiconductor Corp

IC NVSRAM 4MBIT 45NS 44TSOP

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

패키지: 44-TSOP (0.400", 10.16mm Width)

재고5,904

NVSRAM

NVSRAM (Non-Volatile SRAM)

4Mb (256K x 16)

Parallel

-

45ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

MT40A1G8SA-075:E

Micron Technology Inc.

IC DRAM 8G PARALLEL 1.33GHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 8Gb (1G x 8)
Memory Interface: Parallel
Clock Frequency: 1.33GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.26 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,416

DRAM

SDRAM - DDR4

8Gb (1G x 8)

Parallel

1.33GHz

-

1.14 V ~ 1.26 V

0°C ~ 95°C (TC)

-

S29GL064N90TFVR20

Cypress Semiconductor Corp

IC FLASH 64M PARALLEL 56TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8, 4M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP

패키지: 56-TFSOP (0.724", 18.40mm Width)

재고4,608

FLASH

FLASH - NOR

64Mb (8M x 8, 4M x 16)

Parallel

-

90ns

2.7 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

56-TFSOP (0.724", 18.40mm Width)

56-TSOP

M29W160EB80ZA3SE

Micron Technology Inc.

IC FLASH 16M PARALLEL 48TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 16Mb (2M x 8, 1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 80ns
Access Time: 80ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA (6x8)

패키지: 48-TFBGA

재고6,672

FLASH

FLASH - NOR

16Mb (2M x 8, 1M x 16)

Parallel

-

80ns

2.7 V ~ 3.6 V

-40°C ~ 125°C (TA)

Surface Mount

48-TFBGA

48-TFBGA (6x8)

7005L55PFI

IDT, Integrated Device Technology Inc

IC SRAM 64K PARALLEL 64TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 64Kb (8K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (14x14)

패키지: 64-LQFP

재고4,944

SRAM

SRAM - Dual Port, Asynchronous

64Kb (8K x 8)

Parallel

-

55ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

64-LQFP

64-TQFP (14x14)

MX25U2033FZUI

Macronix

IC FLASH 2M 8USON

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,232

-

25LC010A-E/SN16KVAO

Microchip Technology

1K 128X8 2.5V SER EE

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Memory Interface: SPI
Clock Frequency: 10MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고5,520

EEPROM

1Kb (128 x 8)

SPI

10MHz

5ms

-

2.5V ~ 5.5V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

S25HS512TFANHI010

Infineon Technologies

IC FLASH 512MBIT SPI/QUAD 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x8)

패키지: -

재고7,635

FLASH

FLASH - NOR

512Mbit

SPI - Quad I/O

166 MHz

-

1.7V ~ 2V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (6x8)

MT29F2G01ABBGDM79A3WC1L

Micron Technology Inc.

IC FLASH 2GBIT SPI DIE

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 2Gbit
Memory Interface: SPI
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: -

Request a Quote

FLASH

FLASH - NAND (SLC)

2Gbit

SPI

-

1.7V ~ 1.95V

0°C ~ 70°C (TA)

Surface Mount

Die

99326-02831

Infineon Technologies

INFINEON

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-