페이지 1100 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
W632GG6KB-09	Winbond Electronics	IC SDRAM 2GBIT 96WBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 1066MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,352	DRAM	SDRAM - DDR3	2Gb (128M x 16)	Parallel	1066MHz	-	20ns	1.425 V ~ 1.575 V	0°C ~ 95°C (TC)	-	-	-
N25Q032A11EF440F TR	Micron Technology Inc.	IC FLASH NOR 8MX4 UFDFPN Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (8M x 4) Memory Interface: SPI Clock Frequency: 108MHz Write Cycle Time - Word, Page: 8ms, 5ms Access Time: - Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,104	FLASH	FLASH - NOR	32Mb (8M x 4)	SPI	108MHz	8ms, 5ms	-	1.7 V ~ 2 V	-40°C ~ 85°C (TA)	-	-	-
IS61NLF25636A-7.5B2I	ISSI, Integrated Silicon Solution Inc	IC SRAM 9MBIT 7.5NS 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 9Mb (256K x 36) Memory Interface: Parallel Clock Frequency: 117MHz Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 119-BBGA Supplier Device Package: 119-PBGA (14x22)	패키지: 119-BBGA	재고2,912	SRAM	SRAM - Synchronous	9Mb (256K x 36)	Parallel	117MHz	-	7.5ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	119-BBGA	119-PBGA (14x22)
M29W320DB7AN6F TR	Micron Technology Inc.	IC FLASH 32MBIT 70NS 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (4M x 8, 2M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP	패키지: 48-TFSOP (0.724", 18.40mm Width)	재고7,040	FLASH	FLASH - NOR	32Mb (4M x 8, 2M x 16)	Parallel	-	70ns	70ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP
MT46H128M32L2KQ-6 IT:B TR	Micron Technology Inc.	IC SDRAM 4GBIT 167MHZ 168WFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 4Gb (128M x 32) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.0ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 168-WFBGA Supplier Device Package: 168-WFBGA (12x12)	패키지: 168-WFBGA	재고7,200	DRAM	SDRAM - Mobile LPDDR	4Gb (128M x 32)	Parallel	166MHz	15ns	5.0ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	168-WFBGA	168-WFBGA (12x12)
MT29C1G12MAADYAKD-5 IT TR	Micron Technology Inc.	IC FLASH/LPDRAM 1.5GBIT 137TFBGA Memory Type: Non-Volatile Memory Format: FLASH, RAM Technology: FLASH - NAND, Mobile LPDRAM Memory Size: 1Gb (64M x 16)(NAND), 512Mb (16M x 32)(LPDRAM) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 137-TFBGA Supplier Device Package: 137-TFBGA (10.5x13)	패키지: 137-TFBGA	재고2,128	FLASH, RAM	FLASH - NAND, Mobile LPDRAM	1Gb (64M x 16)(NAND), 512Mb (16M x 32)(LPDRAM)	Parallel	200MHz	-	-	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	137-TFBGA	137-TFBGA (10.5x13)
MT46V64M8P-5B L IT:J	Micron Technology Inc.	IC SDRAM 512MBIT 200MHZ 66TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (64M x 8) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.5 V ~ 2.7 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 66-TSSOP (0.400", 10.16mm Width) Supplier Device Package: 66-TSOP	패키지: 66-TSSOP (0.400", 10.16mm Width)	재고3,648	DRAM	SDRAM - DDR	512Mb (64M x 8)	Parallel	200MHz	15ns	700ps	2.5 V ~ 2.7 V	-40°C ~ 85°C (TA)	Surface Mount	66-TSSOP (0.400", 10.16mm Width)	66-TSOP
IDT71V2548S150PF	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 150MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 4.5Mb (256K x 18) Memory Interface: Parallel Clock Frequency: 150MHz Write Cycle Time - Word, Page: - Access Time: 3.8ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: 100-LQFP	재고7,744	SRAM	SRAM - Synchronous ZBT	4.5Mb (256K x 18)	Parallel	150MHz	-	3.8ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
IDT71P72804S167BQGI8	IDT, Integrated Device Technology Inc	IC SRAM 18MBIT 167MHZ 165CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II Memory Size: 18Mb (1M x 18) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: 8.4ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-CABGA (13x15)	패키지: 165-TBGA	재고7,664	SRAM	SRAM - Synchronous, QDR II	18Mb (1M x 18)	Parallel	167MHz	-	8.4ns	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	165-TBGA	165-CABGA (13x15)
AT49LV002-90JI	Microchip Technology	IC FLASH 2MBIT 90NS 32PLCC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 2Mb (256K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 50µs Access Time: 90ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	패키지: 32-LCC (J-Lead)	재고7,120	FLASH	FLASH	2Mb (256K x 8)	Parallel	-	50µs	90ns	3 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	32-LCC (J-Lead)	32-PLCC
AT45D011-XC	Microchip Technology	IC FLASH 1MBIT 15MHZ 14TSSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 1Mb (264 Bytes x 512 pages) Memory Interface: SPI Clock Frequency: 15MHz Write Cycle Time - Word, Page: 15ms Access Time: - Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 14-TSSOP	패키지: 14-TSSOP (0.173", 4.40mm Width)	재고4,160	FLASH	FLASH	1Mb (264 Bytes x 512 pages)	SPI	15MHz	15ms	-	4.5 V ~ 5.5 V	0°C ~ 70°C (TC)	Surface Mount	14-TSSOP (0.173", 4.40mm Width)	14-TSSOP
7130SA35C	IDT, Integrated Device Technology Inc	IC SRAM 8KBIT 35NS 48DIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 8Kb (1K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 48-DIP (0.600", 15.24mm) Supplier Device Package: 48-SIDE BRAZED	패키지: 48-DIP (0.600", 15.24mm)	재고3,248	SRAM	SRAM - Dual Port, Asynchronous	8Kb (1K x 8)	Parallel	-	35ns	35ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Through Hole	48-DIP (0.600", 15.24mm)	48-SIDE BRAZED
70V25L20PFI8	IDT, Integrated Device Technology Inc	IC SRAM 128KBIT 20NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 128Kb (8K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: 100-LQFP	재고4,192	SRAM	SRAM - Dual Port, Asynchronous	128Kb (8K x 16)	Parallel	-	20ns	20ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
MTFC8GLGDM-AIT Z	Micron Technology Inc.	IC FLASH 64GBIT 153TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 64Gb (8G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,176	FLASH	FLASH - NAND	64Gb (8G x 8)	MMC	-	-	-	1.65 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
24LC014T-I/ST	Microchip Technology	IC EEPROM 1KBIT 400KHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고7,888	EEPROM	EEPROM	1Kb (128 x 8)	I2C	400kHz	5ms	900ns	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
LE2432DXATBG	ON Semiconductor	IC EEPROM 32KBIT I2C 6WLCSP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 32Kb (4K x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 450ns Voltage - Supply: 1.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,024	EEPROM	EEPROM	32Kb (4K x 8)	I2C	1MHz	5ms	450ns	1.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
71256SA20YGI8	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT 20NS 28SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 28-BSOJ (0.300", 7.62mm Width) Supplier Device Package: 28-SOJ	패키지: 28-BSOJ (0.300", 7.62mm Width)	재고5,280	SRAM	SRAM - Asynchronous	256Kb (32K x 8)	Parallel	-	20ns	20ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	28-BSOJ (0.300", 7.62mm Width)	28-SOJ
24LC128T-I/MS	Microchip Technology	IC EEPROM 128KBIT 400KHZ 8MSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 128Kb (16K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	재고19,632	EEPROM	EEPROM	128Kb (16K x 8)	I2C	400kHz	5ms	900ns	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP
S25FL256SAGMFIR10	Cypress Semiconductor Corp	IC FLASH 256M SPI 133MHZ 16SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	패키지: 16-SOIC (0.295", 7.50mm Width)	재고6,108	FLASH	FLASH - NOR	256Mb (32M x 8)	SPI - Quad I/O	133MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
S25FL128SDSMFB001	Cypress Semiconductor Corp	IC FLASH 128M SPI 80MHZ 16SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 80MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	패키지: 16-SOIC (0.295", 7.50mm Width)	재고2,992	FLASH	FLASH - NOR	128Mb (16M x 8)	SPI - Quad I/O	80MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
W632GU8MB11I	Winbond Electronics	IC SDRAM DDR3L 2G 78WBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-VFBGA Supplier Device Package: 78-VFBGA (8x10.5)	패키지: 78-VFBGA	재고2,272	DRAM	SDRAM - DDR3L	2Gb (256M x 8)	Parallel	933MHz	15ns	20ns	1.283V ~ 1.45V	-40°C ~ 95°C (TC)	Surface Mount	78-VFBGA	78-VFBGA (8x10.5)
CAT25512HU5E-GT3	onsemi	EEPROM, 64KX8, SERIAL, CMOS, PDS Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 512Kbit Memory Interface: SPI Clock Frequency: 10 MHz Write Cycle Time - Word, Page: 5ms Access Time: 40 ns Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-UDFN (3x2)	패키지: -	Request a Quote	EEPROM	EEPROM	512Kbit	SPI	10 MHz	5ms	40 ns	2.5V ~ 5.5V	-40°C ~ 125°C (TA)	Surface Mount	8-UFDFN Exposed Pad	8-UDFN (3x2)
CAT24C03VP2GI-T3	onsemi	IC EEPROM 2KBIT I2C 400KHZ 8TDFN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kbit Memory Interface: I2C Clock Frequency: 400 kHz Write Cycle Time - Word, Page: 5ms Access Time: 900 ns Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WFDFN Exposed Pad Supplier Device Package: 8-TDFN (2x3)	패키지: -	Request a Quote	EEPROM	EEPROM	2Kbit	I2C	400 kHz	5ms	900 ns	1.8V ~ 5.5V	-40°C ~ 85°C (TA)	Surface Mount	8-WFDFN Exposed Pad	8-TDFN (2x3)
CY7C1470BV33-1XWI	Infineon Technologies	IC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Single Port, Asynchronous, Synchronous, ZBT Memory Size: 72Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 3.135V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Wafer	패키지: -	Request a Quote	SRAM	SRAM - Single Port, Asynchronous, Synchronous, ZBT	72Mbit	Parallel	-	-	-	3.135V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	Die	Wafer
S-24CS01AFM-TFH-U	ABLIC Inc.	LINEAR IC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kbit Memory Interface: I2C Clock Frequency: 350 kHz Write Cycle Time - Word, Page: 10ms Access Time: 1 µs Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-WSSOP, 8-MSOP (0.110", 2.80mm Width) Supplier Device Package: 8-TMSOP	패키지: -	Request a Quote	EEPROM	EEPROM	1Kbit	I2C	350 kHz	10ms	1 µs	1.8V ~ 5.5V	-40°C ~ 105°C (TA)	Surface Mount	8-WSSOP, 8-MSOP (0.110", 2.80mm Width)	8-TMSOP
IM2516SDBDBG-6I	Intelligent Memory Ltd.	SDRAM, 256MB, 3.3V, 16MX16, 166M Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mbit Memory Interface: LVTTL Clock Frequency: 166 MHz Write Cycle Time - Word, Page: 12ns Access Time: 5 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-FBGA (8x8)	패키지: -	Request a Quote	DRAM	SDRAM	256Mbit	LVTTL	166 MHz	12ns	5 ns	3V ~ 3.6V	-40°C ~ 95°C (TC)	Surface Mount	54-TFBGA	54-FBGA (8x8)
FT24C04A-KTR-T	Fremont Micro Devices Ltd	IC EEPROM 4KBIT I2C 1MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kbit Memory Interface: I2C Clock Frequency: 1 MHz Write Cycle Time - Word, Page: 5ms Access Time: 550 ns Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: -	Request a Quote	EEPROM	EEPROM	4Kbit	I2C	1 MHz	5ms	550 ns	1.8V ~ 5.5V	-40°C ~ 85°C	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
MT53E4G32D8GS-046-WT-ES-C	Micron Technology Inc.	LPDDR4 128GBIT 32 200/264 LFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 128Gbit Memory Interface: Parallel Clock Frequency: 2.133 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -25°C ~ 85°C Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4	128Gbit	Parallel	2.133 GHz	-	-	-	-25°C ~ 85°C	-	-	-

W632GG6KB-09

Winbond Electronics

IC SDRAM 2GBIT 96WBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 1066MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,352

DRAM

SDRAM - DDR3

2Gb (128M x 16)

Parallel

1066MHz

-

20ns

1.425 V ~ 1.575 V

0°C ~ 95°C (TC)

-

N25Q032A11EF440F TR

Micron Technology Inc.

IC FLASH NOR 8MX4 UFDFPN

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (8M x 4)
Memory Interface: SPI
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 8ms, 5ms
Access Time: -
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,104

FLASH

FLASH - NOR

32Mb (8M x 4)

SPI

108MHz

8ms, 5ms

-

1.7 V ~ 2 V

-40°C ~ 85°C (TA)

-

IS61NLF25636A-7.5B2I

ISSI, Integrated Silicon Solution Inc

IC SRAM 9MBIT 7.5NS 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 9Mb (256K x 36)
Memory Interface: Parallel
Clock Frequency: 117MHz
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BBGA
Supplier Device Package: 119-PBGA (14x22)

패키지: 119-BBGA

재고2,912

SRAM

SRAM - Synchronous

9Mb (256K x 36)

Parallel

117MHz

-

7.5ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

119-BBGA

119-PBGA (14x22)

M29W320DB7AN6F TR

Micron Technology Inc.

IC FLASH 32MBIT 70NS 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8, 2M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP

패키지: 48-TFSOP (0.724", 18.40mm Width)

재고7,040

FLASH

FLASH - NOR

32Mb (4M x 8, 2M x 16)

Parallel

-

70ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP

MT46H128M32L2KQ-6 IT:B TR

Micron Technology Inc.

IC SDRAM 4GBIT 167MHZ 168WFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 4Gb (128M x 32)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.0ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 168-WFBGA
Supplier Device Package: 168-WFBGA (12x12)

패키지: 168-WFBGA

재고7,200

DRAM

SDRAM - Mobile LPDDR

4Gb (128M x 32)

Parallel

166MHz

15ns

5.0ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

168-WFBGA

168-WFBGA (12x12)

MT29C1G12MAADYAKD-5 IT TR

Micron Technology Inc.

IC FLASH/LPDRAM 1.5GBIT 137TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH, RAM
Technology: FLASH - NAND, Mobile LPDRAM
Memory Size: 1Gb (64M x 16)(NAND), 512Mb (16M x 32)(LPDRAM)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 137-TFBGA
Supplier Device Package: 137-TFBGA (10.5x13)

패키지: 137-TFBGA

재고2,128

FLASH, RAM

FLASH - NAND, Mobile LPDRAM

1Gb (64M x 16)(NAND), 512Mb (16M x 32)(LPDRAM)

Parallel

200MHz

-

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

137-TFBGA

137-TFBGA (10.5x13)

MT46V64M8P-5B L IT:J

Micron Technology Inc.

IC SDRAM 512MBIT 200MHZ 66TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512Mb (64M x 8)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.5 V ~ 2.7 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package: 66-TSOP

패키지: 66-TSSOP (0.400", 10.16mm Width)

재고3,648

DRAM

SDRAM - DDR

512Mb (64M x 8)

Parallel

200MHz

15ns

700ps

2.5 V ~ 2.7 V

-40°C ~ 85°C (TA)

Surface Mount

66-TSSOP (0.400", 10.16mm Width)

66-TSOP

IDT71V2548S150PF

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 150MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 4.5Mb (256K x 18)
Memory Interface: Parallel
Clock Frequency: 150MHz
Write Cycle Time - Word, Page: -
Access Time: 3.8ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: 100-LQFP

재고7,744

SRAM

SRAM - Synchronous ZBT

4.5Mb (256K x 18)

Parallel

150MHz

-

3.8ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

IDT71P72804S167BQGI8

IDT, Integrated Device Technology Inc

IC SRAM 18MBIT 167MHZ 165CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 18Mb (1M x 18)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: 8.4ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-CABGA (13x15)

패키지: 165-TBGA

재고7,664

SRAM

SRAM - Synchronous, QDR II

18Mb (1M x 18)

Parallel

167MHz

-

8.4ns

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

165-TBGA

165-CABGA (13x15)

AT49LV002-90JI

Microchip Technology

IC FLASH 2MBIT 90NS 32PLCC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 2Mb (256K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 50µs
Access Time: 90ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC

패키지: 32-LCC (J-Lead)

재고7,120

FLASH

2Mb (256K x 8)

Parallel

-

50µs

90ns

3 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

32-LCC (J-Lead)

32-PLCC

AT45D011-XC

Microchip Technology

IC FLASH 1MBIT 15MHZ 14TSSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 1Mb (264 Bytes x 512 pages)
Memory Interface: SPI
Clock Frequency: 15MHz
Write Cycle Time - Word, Page: 15ms
Access Time: -
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 14-TSSOP

패키지: 14-TSSOP (0.173", 4.40mm Width)

재고4,160

FLASH

1Mb (264 Bytes x 512 pages)

SPI

15MHz

15ms

-

4.5 V ~ 5.5 V

0°C ~ 70°C (TC)

Surface Mount

14-TSSOP (0.173", 4.40mm Width)

14-TSSOP

7130SA35C

IDT, Integrated Device Technology Inc

IC SRAM 8KBIT 35NS 48DIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 8Kb (1K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 48-DIP (0.600", 15.24mm)
Supplier Device Package: 48-SIDE BRAZED

패키지: 48-DIP (0.600", 15.24mm)

재고3,248

SRAM

SRAM - Dual Port, Asynchronous

8Kb (1K x 8)

Parallel

-

35ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Through Hole

48-DIP (0.600", 15.24mm)

48-SIDE BRAZED

70V25L20PFI8

IDT, Integrated Device Technology Inc

IC SRAM 128KBIT 20NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 128Kb (8K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: 100-LQFP

재고4,192

SRAM

SRAM - Dual Port, Asynchronous

128Kb (8K x 16)

Parallel

-

20ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

MTFC8GLGDM-AIT Z

Micron Technology Inc.

IC FLASH 64GBIT 153TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 64Gb (8G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,176

FLASH

FLASH - NAND

64Gb (8G x 8)

MMC

-

1.65 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

24LC014T-I/ST

Microchip Technology

IC EEPROM 1KBIT 400KHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고7,888

EEPROM

1Kb (128 x 8)

I2C

400kHz

5ms

900ns

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

LE2432DXATBG

ON Semiconductor

IC EEPROM 32KBIT I2C 6WLCSP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 32Kb (4K x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 450ns
Voltage - Supply: 1.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,024

EEPROM

32Kb (4K x 8)

I2C

1MHz

5ms

450ns

1.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

71256SA20YGI8

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 20NS 28SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Supplier Device Package: 28-SOJ

패키지: 28-BSOJ (0.300", 7.62mm Width)

재고5,280

SRAM

SRAM - Asynchronous

256Kb (32K x 8)

Parallel

-

20ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

28-BSOJ (0.300", 7.62mm Width)

28-SOJ

24LC128T-I/MS

Microchip Technology

IC EEPROM 128KBIT 400KHZ 8MSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 128Kb (16K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

재고19,632

EEPROM

128Kb (16K x 8)

I2C

400kHz

5ms

900ns

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-MSOP

S25FL256SAGMFIR10

Cypress Semiconductor Corp

IC FLASH 256M SPI 133MHZ 16SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

패키지: 16-SOIC (0.295", 7.50mm Width)

재고6,108

FLASH

FLASH - NOR

256Mb (32M x 8)

SPI - Quad I/O

133MHz

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

S25FL128SDSMFB001

Cypress Semiconductor Corp

IC FLASH 128M SPI 80MHZ 16SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 80MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

패키지: 16-SOIC (0.295", 7.50mm Width)

재고2,992

FLASH

FLASH - NOR

128Mb (16M x 8)

SPI - Quad I/O

80MHz

-

2.7 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

W632GU8MB11I

Winbond Electronics

IC SDRAM DDR3L 2G 78WBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 2Gb (256M x 8)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-VFBGA
Supplier Device Package: 78-VFBGA (8x10.5)

패키지: 78-VFBGA

재고2,272

DRAM

SDRAM - DDR3L

2Gb (256M x 8)

Parallel

933MHz

15ns

20ns

1.283V ~ 1.45V

-40°C ~ 95°C (TC)

Surface Mount

78-VFBGA

78-VFBGA (8x10.5)

CAT25512HU5E-GT3

onsemi

EEPROM, 64KX8, SERIAL, CMOS, PDS

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 512Kbit
Memory Interface: SPI
Clock Frequency: 10 MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 40 ns
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-UDFN (3x2)

패키지: -

Request a Quote

EEPROM

512Kbit

SPI

10 MHz

5ms

40 ns

2.5V ~ 5.5V

-40°C ~ 125°C (TA)

Surface Mount

8-UFDFN Exposed Pad

8-UDFN (3x2)

CAT24C03VP2GI-T3

onsemi

IC EEPROM 2KBIT I2C 400KHZ 8TDFN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kbit
Memory Interface: I2C
Clock Frequency: 400 kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900 ns
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WFDFN Exposed Pad
Supplier Device Package: 8-TDFN (2x3)

패키지: -

Request a Quote

EEPROM

2Kbit

I2C

400 kHz

5ms

900 ns

1.8V ~ 5.5V

-40°C ~ 85°C (TA)

Surface Mount

8-WFDFN Exposed Pad

8-TDFN (2x3)

CY7C1470BV33-1XWI

Infineon Technologies

IC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Single Port, Asynchronous, Synchronous, ZBT
Memory Size: 72Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Wafer

패키지: -

Request a Quote

SRAM

SRAM - Single Port, Asynchronous, Synchronous, ZBT

72Mbit

Parallel

-

3.135V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

Die

Wafer

S-24CS01AFM-TFH-U

ABLIC Inc.

LINEAR IC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kbit
Memory Interface: I2C
Clock Frequency: 350 kHz
Write Cycle Time - Word, Page: 10ms
Access Time: 1 µs
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WSSOP, 8-MSOP (0.110", 2.80mm Width)
Supplier Device Package: 8-TMSOP

패키지: -

Request a Quote

EEPROM

1Kbit

I2C

350 kHz

10ms

1 µs

1.8V ~ 5.5V

-40°C ~ 105°C (TA)

Surface Mount

8-WSSOP, 8-MSOP (0.110", 2.80mm Width)

8-TMSOP

IM2516SDBDBG-6I

Intelligent Memory Ltd.

SDRAM, 256MB, 3.3V, 16MX16, 166M

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mbit
Memory Interface: LVTTL
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 12ns
Access Time: 5 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-FBGA (8x8)

패키지: -

Request a Quote

DRAM

SDRAM

256Mbit

LVTTL

166 MHz

12ns

5 ns

3V ~ 3.6V

-40°C ~ 95°C (TC)

Surface Mount

54-TFBGA

54-FBGA (8x8)

FT24C04A-KTR-T

Fremont Micro Devices Ltd

IC EEPROM 4KBIT I2C 1MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kbit
Memory Interface: I2C
Clock Frequency: 1 MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 550 ns
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: -

Request a Quote

EEPROM

4Kbit

I2C

1 MHz

5ms

550 ns

1.8V ~ 5.5V

-40°C ~ 85°C

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

MT53E4G32D8GS-046-WT-ES-C

Micron Technology Inc.

LPDDR4 128GBIT 32 200/264 LFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 128Gbit
Memory Interface: Parallel
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -25°C ~ 85°C
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR4

128Gbit

Parallel

2.133 GHz

-

-25°C ~ 85°C

-