페이지 121 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
RMLV0816BGSD-4S2#HC0	Renesas Electronics America	IC SRAM 8MBIT 45NS 52TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM Memory Size: 8Mb (1M x 8, 512K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 2.4 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,528	SRAM	SRAM	8Mb (1M x 8, 512K x 16)	Parallel	-	45ns	45ns	2.4 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F128G08AMCABJ2-10Z:A TR	Micron Technology Inc.	IC FLASH 128GBIT 132TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 128Gb (16G x 8) Memory Interface: Parallel Clock Frequency: 100MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,728	FLASH	FLASH - NAND	128Gb (16G x 8)	Parallel	100MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
IDT71V124SA20YI8	IDT, Integrated Device Technology Inc	IC SRAM 1MBIT 20NS 32SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 32-SOJ	패키지: 32-BSOJ (0.400", 10.16mm Width)	재고3,792	SRAM	SRAM - Asynchronous	1Mb (128K x 8)	Parallel	-	20ns	20ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	32-BSOJ (0.400", 10.16mm Width)	32-SOJ
W19B320ABT7H	Winbond Electronics	IC FLASH 32MBIT 70NS 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 32Mb (4M x 8, 2M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -20°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP	패키지: 48-TFSOP (0.724", 18.40mm Width)	재고148,668	FLASH	FLASH	32Mb (4M x 8, 2M x 16)	Parallel	-	70ns	70ns	2.7 V ~ 3.6 V	-20°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP
DS1230Y-120IND	Maxim Integrated	IC NVSRAM 256KBIT 120NS 28EDIP Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 120ns Access Time: 120ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 28-DIP Module (0.600", 15.24mm) Supplier Device Package: 28-EDIP	패키지: 28-DIP Module (0.600", 15.24mm)	재고4,112	NVSRAM	NVSRAM (Non-Volatile SRAM)	256Kb (32K x 8)	Parallel	-	120ns	120ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Through Hole	28-DIP Module (0.600", 15.24mm)	28-EDIP
AT28BV64B-20TI	Microchip Technology	IC EEPROM 64KBIT 200NS 28TSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64Kb (8K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ms Access Time: 200ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 28-TSSOP (0.465", 11.80mm Width) Supplier Device Package: 28-TSOP	패키지: 28-TSSOP (0.465", 11.80mm Width)	재고9,108	EEPROM	EEPROM	64Kb (8K x 8)	Parallel	-	10ms	200ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	28-TSSOP (0.465", 11.80mm Width)	28-TSOP
7025S55G	IDT, Integrated Device Technology Inc	IC SRAM 128KBIT 55NS 84PGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 128Kb (8K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 84-BPGA Supplier Device Package: 84-PGA (27.94x27.94)	패키지: 84-BPGA	재고6,128	SRAM	SRAM - Dual Port, Asynchronous	128Kb (8K x 16)	Parallel	-	55ns	55ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Through Hole	84-BPGA	84-PGA (27.94x27.94)
LE25U81AQETXG	ON Semiconductor	IC FLASH 8MBIT 40MHZ 8VDFN Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 8Mb (1M x 8) Memory Interface: SPI Clock Frequency: 40MHz Write Cycle Time - Word, Page: 500µs Access Time: - Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-VDFN/VSONT (6x5)	패키지: 8-WDFN Exposed Pad	재고2,464	FLASH	FLASH	8Mb (1M x 8)	SPI	40MHz	500µs	-	2.3 V ~ 2.7 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-VDFN/VSONT (6x5)
BR24C16-WDW6TP	Rohm Semiconductor	IC EEPROM 16KBIT 400KHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고5,200	EEPROM	EEPROM	16Kb (2K x 8)	I2C	400kHz	5ms	-	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
BR24G16FJ-3AGTE2	Rohm Semiconductor	IC EEPROM 16KBIT 400KHZ 8SOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.6 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP-J	패키지: 8-SOIC (0.154", 3.90mm Width)	재고3,328	EEPROM	EEPROM	16Kb (2K x 8)	I2C	1MHz	5ms	-	1.6 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP-J
S29GL01GS11TFIV20	Cypress Semiconductor Corp	IC FLASH 1GBIT 110NS 56TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Gb (64M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 110ns Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 56-TSOP	패키지: 56-TFSOP (0.724", 18.40mm Width)	재고3,984	FLASH	FLASH - NOR	1Gb (64M x 16)	Parallel	-	60ns	110ns	1.65 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	56-TFSOP (0.724", 18.40mm Width)	56-TSOP
CY14B116M-BZ45XI	Cypress Semiconductor Corp	IC NVSRAM 16MBIT 45NS 165BGA Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (15x17)	패키지: 165-LBGA	재고5,664	NVSRAM	NVSRAM (Non-Volatile SRAM)	16Mb (1M x 16)	Parallel	-	45ns	45ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	165-LBGA	165-FBGA (15x17)
AT24C512C-SSHM-B	Microchip Technology	IC EEPROM 512KBIT 1MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 512Kb (64K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고12,204	EEPROM	EEPROM	512Kb (64K x 8)	I2C	400kHz	5ms	900ns	1.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
CY7C1414KV18-250BZXC	Cypress Semiconductor Corp	IC SRAM 36MBIT 250MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II Memory Size: 36Mb (1M x 36) Memory Interface: Parallel Clock Frequency: 250MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	패키지: 165-LBGA	재고12,372	SRAM	SRAM - Synchronous, QDR II	36Mb (1M x 36)	Parallel	250MHz	-	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
25LC040AT-E/OT	Microchip Technology	IC EEPROM 4KBIT 10MHZ SOT23-6 Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (512 x 8) Memory Interface: SPI Clock Frequency: 10MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6	패키지: SOT-23-6	재고96,744	EEPROM	EEPROM	4Kb (512 x 8)	SPI	10MHz	5ms	-	2.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	SOT-23-6	SOT-23-6
CY7C1357C-100BZC	Cypress Semiconductor Corp	IC SRAM 9MBIT 100MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 9Mb (512K x 18) Memory Interface: Parallel Clock Frequency: 100MHz Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 3.135 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	패키지: 165-LBGA	재고7,056	SRAM	SRAM - Synchronous	9Mb (512K x 18)	Parallel	100MHz	-	7.5ns	3.135 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
NM27C010VE120	ON Semiconductor	IC EPROM 1M PARALLEL 32PLCC Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 120ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC (14x11.46)	패키지: 32-LCC (J-Lead)	재고4,064	EPROM	EPROM - OTP	1Mb (128K x 8)	Parallel	-	-	120ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	32-LCC (J-Lead)	32-PLCC (14x11.46)
S34ML04G100BHI003	Cypress Semiconductor Corp	IC FLASH 4G PARALLEL 63BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-BGA (11x9)	패키지: 63-VFBGA	재고5,184	FLASH	FLASH - NAND	4Gb (512M x 8)	Parallel	-	25ns	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	63-VFBGA	63-BGA (11x9)
7007L20PFGI8	IDT, Integrated Device Technology Inc	IC SRAM 256K PARALLEL 80TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 80-LQFP Supplier Device Package: 80-TQFP (14x14)	패키지: 80-LQFP	재고2,032	SRAM	SRAM - Dual Port, Asynchronous	256Kb (32K x 8)	Parallel	-	20ns	20ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	80-LQFP	80-TQFP (14x14)
CY62136FV30LL-45ZSXAT	Cypress Semiconductor Corp	IC SRAM 2MBIT 45NS 44TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 2Mb (128K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 2.2V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	패키지: 44-TSOP (0.400", 10.16mm Width)	재고2,864	SRAM	SRAM - Asynchronous	2Mb (128K x 16)	Parallel	-	45ns	45ns	2.2V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
24FC02T-E/MUY	Microchip Technology	2KB I2C EEPROM 1MHZ 1.7-5.5V 8-U Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I²C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 450ns Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-UDFN (2x3)	패키지: 8-UFDFN Exposed Pad	재고5,232	EEPROM	EEPROM	2Kb (256 x 8)	I²C	1MHz	5ms	450ns	1.7V ~ 5.5V	-40°C ~ 125°C (TA)	Surface Mount	8-UFDFN Exposed Pad	8-UDFN (2x3)
AF032GEC5X-2004CX	ATP Electronics, Inc.	32GB E.MMC 153 BALLS BGA C-TEMP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
GS82583ET36GK-675I	GSI Technology Inc.	IC SRAM 288MBIT PAR 260BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 288Mbit Memory Interface: Parallel Clock Frequency: 675 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.25V ~ 1.35V Operating Temperature: -40°C ~ 100°C (TJ) Mounting Type: Surface Mount Package / Case: 260-BGA Supplier Device Package: 260-BGA (22x14)	패키지: -	Request a Quote	SRAM	SRAM - Synchronous	288Mbit	Parallel	675 MHz	-	-	1.25V ~ 1.35V	-40°C ~ 100°C (TJ)	Surface Mount	260-BGA	260-BGA (22x14)
IS43TR82560D-107MBL-TR	ISSI, Integrated Silicon Solution Inc	2G, 1.5V, DDR3L, 256Mx8, 1866MT/ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 2Gbit Memory Interface: Parallel Clock Frequency: 933 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-TWBGA (8x10.5)	패키지: -	Request a Quote	DRAM	SDRAM - DDR3	2Gbit	Parallel	933 MHz	15ns	20 ns	1.425V ~ 1.575V	0°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-TWBGA (8x10.5)
GD55LT01GEBIRY	GigaDevice Semiconductor (HK) Limited	LINEAR IC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 1Gbit Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.65V ~ 2V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-TFBGA (6x8)	패키지: -	Request a Quote	FLASH	FLASH - NOR (SLC)	1Gbit	SPI - Quad I/O, QPI, DTR	-	-	-	1.65V ~ 2V	-40°C ~ 85°C (TA)	Surface Mount	24-TBGA	24-TFBGA (6x8)
W25Q64JVZPIM	Winbond Electronics	IC FLASH 64MBIT SPI/QUAD 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mbit Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 3ms Access Time: 6 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x5)	패키지: -	재고1,695	FLASH	FLASH - NOR	64Mbit	SPI - Quad I/O, QPI, DTR	133 MHz	3ms	6 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x5)
MT62F512M64D2CZ-026-WT-E	Micron Technology Inc.	LPDDR5 32GBIT 64 561/570 TFBGA 2 Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
W25N01KVZEIR-TR	Winbond Electronics	1G-BIT SERIAL NAND FLASH, 3V Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 1Gbit Memory Interface: SPI - Quad I/O Clock Frequency: 104 MHz Write Cycle Time - Word, Page: 700µs Access Time: 7 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (8x6)	패키지: -	Request a Quote	FLASH	FLASH - NAND (SLC)	1Gbit	SPI - Quad I/O	104 MHz	700µs	7 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (8x6)

RMLV0816BGSD-4S2#HC0

Renesas Electronics America

IC SRAM 8MBIT 45NS 52TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 8Mb (1M x 8, 512K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 2.4 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,528

SRAM

8Mb (1M x 8, 512K x 16)

Parallel

-

45ns

2.4 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

MT29F128G08AMCABJ2-10Z:A TR

Micron Technology Inc.

IC FLASH 128GBIT 132TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
Memory Interface: Parallel
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,728

FLASH

FLASH - NAND

128Gb (16G x 8)

Parallel

100MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

IDT71V124SA20YI8

IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 20NS 32SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 32-SOJ

패키지: 32-BSOJ (0.400", 10.16mm Width)

재고3,792

SRAM

SRAM - Asynchronous

1Mb (128K x 8)

Parallel

-

20ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

32-BSOJ (0.400", 10.16mm Width)

32-SOJ

W19B320ABT7H

Winbond Electronics

IC FLASH 32MBIT 70NS 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 32Mb (4M x 8, 2M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -20°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP

패키지: 48-TFSOP (0.724", 18.40mm Width)

재고148,668

FLASH

32Mb (4M x 8, 2M x 16)

Parallel

-

70ns

2.7 V ~ 3.6 V

-20°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP

DS1230Y-120IND

Maxim Integrated

IC NVSRAM 256KBIT 120NS 28EDIP

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 120ns
Access Time: 120ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 28-DIP Module (0.600", 15.24mm)
Supplier Device Package: 28-EDIP

패키지: 28-DIP Module (0.600", 15.24mm)

재고4,112

NVSRAM

NVSRAM (Non-Volatile SRAM)

256Kb (32K x 8)

Parallel

-

120ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Through Hole

28-DIP Module (0.600", 15.24mm)

28-EDIP

AT28BV64B-20TI

Microchip Technology

IC EEPROM 64KBIT 200NS 28TSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kb (8K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ms
Access Time: 200ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Supplier Device Package: 28-TSOP

패키지: 28-TSSOP (0.465", 11.80mm Width)

재고9,108

EEPROM

64Kb (8K x 8)

Parallel

-

10ms

200ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

28-TSSOP (0.465", 11.80mm Width)

28-TSOP

7025S55G

IDT, Integrated Device Technology Inc

IC SRAM 128KBIT 55NS 84PGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 128Kb (8K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 84-BPGA
Supplier Device Package: 84-PGA (27.94x27.94)

패키지: 84-BPGA

재고6,128

SRAM

SRAM - Dual Port, Asynchronous

128Kb (8K x 16)

Parallel

-

55ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Through Hole

84-BPGA

84-PGA (27.94x27.94)

LE25U81AQETXG

ON Semiconductor

IC FLASH 8MBIT 40MHZ 8VDFN

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 8Mb (1M x 8)
Memory Interface: SPI
Clock Frequency: 40MHz
Write Cycle Time - Word, Page: 500µs
Access Time: -
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-VDFN/VSONT (6x5)

패키지: 8-WDFN Exposed Pad

재고2,464

FLASH

8Mb (1M x 8)

SPI

40MHz

500µs

-

2.3 V ~ 2.7 V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-VDFN/VSONT (6x5)

BR24C16-WDW6TP

Rohm Semiconductor

IC EEPROM 16KBIT 400KHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고5,200

EEPROM

16Kb (2K x 8)

I2C

400kHz

5ms

-

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

BR24G16FJ-3AGTE2

Rohm Semiconductor

IC EEPROM 16KBIT 400KHZ 8SOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.6 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP-J

패키지: 8-SOIC (0.154", 3.90mm Width)

재고3,328

EEPROM

16Kb (2K x 8)

I2C

1MHz

5ms

-

1.6 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP-J

S29GL01GS11TFIV20

Cypress Semiconductor Corp

IC FLASH 1GBIT 110NS 56TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gb (64M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 110ns
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP

패키지: 56-TFSOP (0.724", 18.40mm Width)

재고3,984

FLASH

FLASH - NOR

1Gb (64M x 16)

Parallel

-

60ns

110ns

1.65 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

56-TFSOP (0.724", 18.40mm Width)

56-TSOP

CY14B116M-BZ45XI

Cypress Semiconductor Corp

IC NVSRAM 16MBIT 45NS 165BGA

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (15x17)

패키지: 165-LBGA

재고5,664

NVSRAM

NVSRAM (Non-Volatile SRAM)

16Mb (1M x 16)

Parallel

-

45ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

165-LBGA

165-FBGA (15x17)

AT24C512C-SSHM-B

Microchip Technology

IC EEPROM 512KBIT 1MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 512Kb (64K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고12,204

EEPROM

512Kb (64K x 8)

I2C

400kHz

5ms

900ns

1.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

CY7C1414KV18-250BZXC

Cypress Semiconductor Corp

IC SRAM 36MBIT 250MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 36Mb (1M x 36)
Memory Interface: Parallel
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

패키지: 165-LBGA

재고12,372

SRAM

SRAM - Synchronous, QDR II

36Mb (1M x 36)

Parallel

250MHz

-

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

25LC040AT-E/OT

Microchip Technology

IC EEPROM 4KBIT 10MHZ SOT23-6

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (512 x 8)
Memory Interface: SPI
Clock Frequency: 10MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6

패키지: SOT-23-6

재고96,744

EEPROM

4Kb (512 x 8)

SPI

10MHz

5ms

-

2.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

SOT-23-6

CY7C1357C-100BZC

Cypress Semiconductor Corp

IC SRAM 9MBIT 100MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 9Mb (512K x 18)
Memory Interface: Parallel
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 3.135 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

패키지: 165-LBGA

재고7,056

SRAM

SRAM - Synchronous

9Mb (512K x 18)

Parallel

100MHz

-

7.5ns

3.135 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

NM27C010VE120

ON Semiconductor

IC EPROM 1M PARALLEL 32PLCC

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 120ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC (14x11.46)

패키지: 32-LCC (J-Lead)

재고4,064

EPROM

EPROM - OTP

1Mb (128K x 8)

Parallel

-

120ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

32-LCC (J-Lead)

32-PLCC (14x11.46)

S34ML04G100BHI003

Cypress Semiconductor Corp

IC FLASH 4G PARALLEL 63BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-BGA (11x9)

패키지: 63-VFBGA

재고5,184

FLASH

FLASH - NAND

4Gb (512M x 8)

Parallel

-

25ns

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

63-VFBGA

63-BGA (11x9)

7007L20PFGI8

IDT, Integrated Device Technology Inc

IC SRAM 256K PARALLEL 80TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Supplier Device Package: 80-TQFP (14x14)

패키지: 80-LQFP

재고2,032

SRAM

SRAM - Dual Port, Asynchronous

256Kb (32K x 8)

Parallel

-

20ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

80-LQFP

80-TQFP (14x14)

CY62136FV30LL-45ZSXAT

Cypress Semiconductor Corp

IC SRAM 2MBIT 45NS 44TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 2Mb (128K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

패키지: 44-TSOP (0.400", 10.16mm Width)

재고2,864

SRAM

SRAM - Asynchronous

2Mb (128K x 16)

Parallel

-

45ns

2.2V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

24FC02T-E/MUY

Microchip Technology

2KB I2C EEPROM 1MHZ 1.7-5.5V 8-U

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I²C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 450ns
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-UDFN (2x3)

패키지: 8-UFDFN Exposed Pad

재고5,232

EEPROM

2Kb (256 x 8)

I²C

1MHz

5ms

450ns

1.7V ~ 5.5V

-40°C ~ 125°C (TA)

Surface Mount

8-UFDFN Exposed Pad

8-UDFN (2x3)

AF032GEC5X-2004CX

ATP Electronics, Inc.

32GB E.MMC 153 BALLS BGA C-TEMP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

GS82583ET36GK-675I

GSI Technology Inc.

IC SRAM 288MBIT PAR 260BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 288Mbit
Memory Interface: Parallel
Clock Frequency: 675 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.25V ~ 1.35V
Operating Temperature: -40°C ~ 100°C (TJ)
Mounting Type: Surface Mount
Package / Case: 260-BGA
Supplier Device Package: 260-BGA (22x14)

패키지: -

Request a Quote

SRAM

SRAM - Synchronous

288Mbit

Parallel

675 MHz

-

1.25V ~ 1.35V

-40°C ~ 100°C (TJ)

Surface Mount

260-BGA

260-BGA (22x14)

IS43TR82560D-107MBL-TR

ISSI, Integrated Silicon Solution Inc

2G, 1.5V, DDR3L, 256Mx8, 1866MT/

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gbit
Memory Interface: Parallel
Clock Frequency: 933 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-TWBGA (8x10.5)

패키지: -

Request a Quote

DRAM

SDRAM - DDR3

2Gbit

Parallel

933 MHz

15ns

20 ns

1.425V ~ 1.575V

0°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-TWBGA (8x10.5)

GD55LT01GEBIRY

GigaDevice Semiconductor (HK) Limited

LINEAR IC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 1Gbit
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.65V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-TFBGA (6x8)

패키지: -

Request a Quote

FLASH

FLASH - NOR (SLC)

1Gbit

SPI - Quad I/O, QPI, DTR

-

1.65V ~ 2V

-40°C ~ 85°C (TA)

Surface Mount

24-TBGA

24-TFBGA (6x8)

W25Q64JVZPIM

Winbond Electronics

IC FLASH 64MBIT SPI/QUAD 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mbit
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 3ms
Access Time: 6 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x5)

패키지: -

재고1,695

FLASH

FLASH - NOR

64Mbit

SPI - Quad I/O, QPI, DTR

133 MHz

3ms

6 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (6x5)

MT62F512M64D2CZ-026-WT-E

Micron Technology Inc.

LPDDR5 32GBIT 64 561/570 TFBGA 2

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

W25N01KVZEIR-TR

Winbond Electronics

1G-BIT SERIAL NAND FLASH, 3V

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 1Gbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 104 MHz
Write Cycle Time - Word, Page: 700µs
Access Time: 7 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (8x6)

패키지: -

Request a Quote

FLASH

FLASH - NAND (SLC)

1Gbit

SPI - Quad I/O

104 MHz

700µs

7 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (8x6)