페이지 1210 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
N25Q064A13ESED0G	Micron Technology Inc.	IC FLASH 64MBIT 108MHZ 8SO Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (16M x 4) Memory Interface: SPI Clock Frequency: 108MHz Write Cycle Time - Word, Page: 8ms, 5ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SO W	패키지: 8-SOIC (0.209", 5.30mm Width)	재고5,360	FLASH	FLASH - NOR	64Mb (16M x 4)	SPI	108MHz	8ms, 5ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SO W
AS4C256M16D3-12BIN	Alliance Memory, Inc.	IC SDRAM 4GBIT 800MHZ 96BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (13x9)	패키지: 96-TFBGA	재고7,680	DRAM	SDRAM - DDR3	4Gb (256M x 16)	Parallel	800MHz	15ns	20ns	1.425 V ~ 1.575 V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (13x9)
MT41J256M8HX-15E:D TR	Micron Technology Inc.	IC SDRAM 2GBIT 667MHZ 78FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: 667MHz Write Cycle Time - Word, Page: - Access Time: 13.5ns Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (9x11.5)	패키지: 78-TFBGA	재고2,736	DRAM	SDRAM - DDR3	2Gb (256M x 8)	Parallel	667MHz	-	13.5ns	1.425 V ~ 1.575 V	0°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-FBGA (9x11.5)
IDT71V546XS133PF	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 133MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 4.2ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: 100-LQFP	재고5,216	SRAM	SRAM - Synchronous ZBT	4.5Mb (128K x 36)	Parallel	133MHz	-	4.2ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
IDT71V2576S133PFI8	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 133MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 4.2ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: 100-LQFP	재고7,296	SRAM	SRAM - Synchronous	4.5Mb (128K x 36)	Parallel	133MHz	-	4.2ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
IS42S16800E-6TLI-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 128MBIT 166MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	패키지: 54-TSOP (0.400", 10.16mm Width)	재고6,368	DRAM	SDRAM	128Mb (8M x 16)	Parallel	166MHz	-	5.4ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
M93C56-MN6P	STMicroelectronics	IC EEPROM 2KBIT 2MHZ 8SO Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8, 128 x 16) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고6,288	EEPROM	EEPROM	2Kb (256 x 8, 128 x 16)	SPI	2MHz	5ms	-	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
M29F400BB70N6T TR	Micron Technology Inc.	IC FLASH 4MBIT 70NS 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 4Mb (512K x 8, 256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP	패키지: 48-TFSOP (0.724", 18.40mm Width)	재고6,752	FLASH	FLASH - NOR	4Mb (512K x 8, 256K x 16)	Parallel	-	70ns	70ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP
AT49BV1614-90TC	Microchip Technology	IC FLASH 16MBIT 90NS 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 16Mb (2M x 8, 1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 50µs Access Time: 90ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP	패키지: 48-TFSOP (0.724", 18.40mm Width)	재고4,368	FLASH	FLASH	16Mb (2M x 8, 1M x 16)	Parallel	-	50µs	90ns	3 V ~ 3.6 V	0°C ~ 70°C (TC)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP
AT27C040-12TC	Microchip Technology	IC OTP 4MBIT 120NS 32TSOP Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 120ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 32-TSOP	패키지: 32-TFSOP (0.724", 18.40mm Width)	재고7,984	EPROM	EPROM - OTP	4Mb (512K x 8)	Parallel	-	-	120ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TC)	Surface Mount	32-TFSOP (0.724", 18.40mm Width)	32-TSOP
70T3319S133BF8	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 133MHZ 208CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 4.5Mb (256K x 18) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 4.2ns Voltage - Supply: 2.4 V ~ 2.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 208-LFBGA Supplier Device Package: 208-CABGA (15x15)	패키지: 208-LFBGA	재고4,416	SRAM	SRAM - Dual Port, Synchronous	4.5Mb (256K x 18)	Parallel	133MHz	-	4.2ns	2.4 V ~ 2.6 V	0°C ~ 70°C (TA)	Surface Mount	208-LFBGA	208-CABGA (15x15)
IS46R16160F-6TLA2	ISSI, Integrated Silicon Solution Inc	IC SDRAM 256MBIT 167MHZ 66TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 66-TSSOP (0.400", 10.16mm Width) Supplier Device Package: 66-TSOP II	패키지: 66-TSSOP (0.400", 10.16mm Width)	재고5,840	DRAM	SDRAM - DDR	256Mb (16M x 16)	Parallel	166MHz	15ns	700ps	2.3 V ~ 2.7 V	-40°C ~ 105°C (TA)	Surface Mount	66-TSSOP (0.400", 10.16mm Width)	66-TSOP II
S29GL064N90FFA020	Cypress Semiconductor Corp	NOR Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8, 4M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 90ns Access Time: 90ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,256	FLASH	FLASH - NOR	64Mb (8M x 8, 4M x 16)	Parallel	-	90ns	90ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
AT28C010E-15JU-235	Microchip Technology	IC EEPROM 1MBIT 150NS 32PLCC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ms Access Time: 150ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	패키지: 32-LCC (J-Lead)	재고3,776	EEPROM	EEPROM	1Mb (128K x 8)	Parallel	-	10ms	150ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Surface Mount	32-LCC (J-Lead)	32-PLCC
BR93G76FVT-3BGE2	Rohm Semiconductor	IC EEPROM 8KBIT 3MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kb (512 x 16) Memory Interface: SPI Clock Frequency: 3MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP-B	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고25,668	EEPROM	EEPROM	8Kb (512 x 16)	SPI	3MHz	5ms	-	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP-B
AT45DB161E-SHF-B	Adesto Technologies	IC FLASH 16MBIT 85MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 16Mb (528 Bytes x 4096 pages) Memory Interface: SPI Clock Frequency: 85MHz Write Cycle Time - Word, Page: 8µs, 4ms Access Time: - Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.209", 5.30mm Width)	재고12,774	FLASH	FLASH	16Mb (528 Bytes x 4096 pages)	SPI	85MHz	8µs, 4ms	-	2.3 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
MX25L4006EPI-12G	Macronix	IC FLASH 4MBIT 86MHZ 8DIP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 4Mb (512K x 8) Memory Interface: SPI Clock Frequency: 86MHz Write Cycle Time - Word, Page: 50µs, 3ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	패키지: 8-DIP (0.300", 7.62mm)	재고21,558	FLASH	FLASH - NOR	4Mb (512K x 8)	SPI	86MHz	50µs, 3ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
DS28E04S-100+	Maxim Integrated	IC EEPROM 4KBIT 1WIRE 16SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (256 x 16) Memory Interface: 1-Wire? Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 2µs Voltage - Supply: - Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	패키지: 16-SOIC (0.154", 3.90mm Width)	재고47,100	EEPROM	EEPROM	4Kb (256 x 16)	1-Wire?	-	-	2µs	-	-40°C ~ 85°C (TA)	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC
24AA512-I/WF22K	Microchip Technology	IC EEPROM 512K I2C 400KHZ WAFER Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 512Kb (64K x 8) Memory Interface: I²C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: Die	재고7,152	EEPROM	EEPROM	512Kb (64K x 8)	I²C	400kHz	5ms	900ns	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	Die	Die
S29GL01GS11FHSS63	Cypress Semiconductor Corp	IC FLASH 1G PARALLEL 64BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Gb (64M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 110ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (13x11)	패키지: 64-LBGA	재고7,568	FLASH	FLASH - NOR	1Gb (64M x 16)	Parallel	-	60ns	110ns	2.7 V ~ 3.6 V	0°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-FBGA (13x11)
CY7C1062AV25-10BGI	Cypress Semiconductor Corp	IC SRAM 16MBIT PARALLEL 119PBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10 ns Voltage - Supply: 2.4V ~ 2.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	패키지: -	Request a Quote	SRAM	SRAM - Asynchronous	16Mbit	Parallel	-	10ns	10 ns	2.4V ~ 2.6V	-40°C ~ 85°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
MT53E1D1BZW-DC-TR	Micron Technology Inc.	LPDDR4 BGA Z42M Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
W25N02JWSFIF-TR	Winbond Electronics	IC FLASH 2GBIT SPI/QUAD 16SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 2Gbit Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 166 MHz Write Cycle Time - Word, Page: 700µs Access Time: 6 ns Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	패키지: -	Request a Quote	FLASH	FLASH - NAND (SLC)	2Gbit	SPI - Quad I/O, QPI, DTR	166 MHz	700µs	6 ns	1.7V ~ 1.95V	-40°C ~ 85°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
24CSM01T-I-SN	Microchip Technology	1MBIT 3.4MHZ I2C SERIAL EEPROM, Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Mbit Memory Interface: I2C Clock Frequency: 3.4 MHz Write Cycle Time - Word, Page: 5ms Access Time: 400 ns Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	Request a Quote	EEPROM	EEPROM	1Mbit	I2C	3.4 MHz	5ms	400 ns	1.7V ~ 5.5V	-40°C ~ 85°C (TC)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
MT58L256L32PT-6	Micron Technology Inc.	IC SRAM 8MBIT PARALLEL 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Standard Memory Size: 8Mbit Memory Interface: Parallel Clock Frequency: 166 MHz Write Cycle Time - Word, Page: - Access Time: 3.5 ns Voltage - Supply: 3.135V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20.1)	패키지: -	Request a Quote	SRAM	SRAM - Standard	8Mbit	Parallel	166 MHz	-	3.5 ns	3.135V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20.1)
IS42S83200L-7BL-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 256MBIT PAR 54TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mbit Memory Interface: LVTTL Clock Frequency: 143 MHz Write Cycle Time - Word, Page: - Access Time: 5.4 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8)	패키지: -	Request a Quote	DRAM	SDRAM	256Mbit	LVTTL	143 MHz	-	5.4 ns	3V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	54-TFBGA	54-TFBGA (8x8)
24CS512-E-SN66KVAO	Microchip Technology	IC EEPROM 512KBIT I2C 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 512Kbit Memory Interface: I2C Clock Frequency: 3.4 MHz Write Cycle Time - Word, Page: 5ms Access Time: 400 ns Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	Request a Quote	EEPROM	EEPROM	512Kbit	I2C	3.4 MHz	5ms	400 ns	1.7V ~ 5.5V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
MT29AZ2B1BHGTN-18IT-111-TR	Micron Technology Inc.	IC FLASH RAM 1G PARALLEL Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

N25Q064A13ESED0G

Micron Technology Inc.

IC FLASH 64MBIT 108MHZ 8SO

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (16M x 4)
Memory Interface: SPI
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 8ms, 5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SO W

패키지: 8-SOIC (0.209", 5.30mm Width)

재고5,360

FLASH

FLASH - NOR

64Mb (16M x 4)

SPI

108MHz

8ms, 5ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SO W

AS4C256M16D3-12BIN

Alliance Memory, Inc.

IC SDRAM 4GBIT 800MHZ 96BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (13x9)

패키지: 96-TFBGA

재고7,680

DRAM

SDRAM - DDR3

4Gb (256M x 16)

Parallel

800MHz

15ns

20ns

1.425 V ~ 1.575 V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (13x9)

MT41J256M8HX-15E:D TR

Micron Technology Inc.

IC SDRAM 2GBIT 667MHZ 78FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gb (256M x 8)
Memory Interface: Parallel
Clock Frequency: 667MHz
Write Cycle Time - Word, Page: -
Access Time: 13.5ns
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (9x11.5)

패키지: 78-TFBGA

재고2,736

DRAM

SDRAM - DDR3

2Gb (256M x 8)

Parallel

667MHz

-

13.5ns

1.425 V ~ 1.575 V

0°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-FBGA (9x11.5)

IDT71V546XS133PF

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 133MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 4.2ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: 100-LQFP

재고5,216

SRAM

SRAM - Synchronous ZBT

4.5Mb (128K x 36)

Parallel

133MHz

-

4.2ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

IDT71V2576S133PFI8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 133MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 4.2ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: 100-LQFP

재고7,296

SRAM

SRAM - Synchronous

4.5Mb (128K x 36)

Parallel

133MHz

-

4.2ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

IS42S16800E-6TLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 166MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

패키지: 54-TSOP (0.400", 10.16mm Width)

재고6,368

DRAM

SDRAM

128Mb (8M x 16)

Parallel

166MHz

-

5.4ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

M93C56-MN6P

STMicroelectronics

IC EEPROM 2KBIT 2MHZ 8SO

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8, 128 x 16)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고6,288

EEPROM

2Kb (256 x 8, 128 x 16)

SPI

2MHz

5ms

-

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

M29F400BB70N6T TR

Micron Technology Inc.

IC FLASH 4MBIT 70NS 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 4Mb (512K x 8, 256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP

패키지: 48-TFSOP (0.724", 18.40mm Width)

재고6,752

FLASH

FLASH - NOR

4Mb (512K x 8, 256K x 16)

Parallel

-

70ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP

AT49BV1614-90TC

Microchip Technology

IC FLASH 16MBIT 90NS 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 16Mb (2M x 8, 1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 50µs
Access Time: 90ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP

패키지: 48-TFSOP (0.724", 18.40mm Width)

재고4,368

FLASH

16Mb (2M x 8, 1M x 16)

Parallel

-

50µs

90ns

3 V ~ 3.6 V

0°C ~ 70°C (TC)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP

AT27C040-12TC

Microchip Technology

IC OTP 4MBIT 120NS 32TSOP

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 120ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP

패키지: 32-TFSOP (0.724", 18.40mm Width)

재고7,984

EPROM

EPROM - OTP

4Mb (512K x 8)

Parallel

-

120ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TC)

Surface Mount

32-TFSOP (0.724", 18.40mm Width)

32-TSOP

70T3319S133BF8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 133MHZ 208CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 4.5Mb (256K x 18)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 4.2ns
Voltage - Supply: 2.4 V ~ 2.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 208-LFBGA
Supplier Device Package: 208-CABGA (15x15)

패키지: 208-LFBGA

재고4,416

SRAM

SRAM - Dual Port, Synchronous

4.5Mb (256K x 18)

Parallel

133MHz

-

4.2ns

2.4 V ~ 2.6 V

0°C ~ 70°C (TA)

Surface Mount

208-LFBGA

208-CABGA (15x15)

IS46R16160F-6TLA2

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 167MHZ 66TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package: 66-TSOP II

패키지: 66-TSSOP (0.400", 10.16mm Width)

재고5,840

DRAM

SDRAM - DDR

256Mb (16M x 16)

Parallel

166MHz

15ns

700ps

2.3 V ~ 2.7 V

-40°C ~ 105°C (TA)

Surface Mount

66-TSSOP (0.400", 10.16mm Width)

66-TSOP II

S29GL064N90FFA020

Cypress Semiconductor Corp

NOR

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8, 4M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,256

FLASH

FLASH - NOR

64Mb (8M x 8, 4M x 16)

Parallel

-

90ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

AT28C010E-15JU-235

Microchip Technology

IC EEPROM 1MBIT 150NS 32PLCC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ms
Access Time: 150ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC

패키지: 32-LCC (J-Lead)

재고3,776

EEPROM

1Mb (128K x 8)

Parallel

-

10ms

150ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Surface Mount

32-LCC (J-Lead)

32-PLCC

BR93G76FVT-3BGE2

Rohm Semiconductor

IC EEPROM 8KBIT 3MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kb (512 x 16)
Memory Interface: SPI
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP-B

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고25,668

EEPROM

8Kb (512 x 16)

SPI

3MHz

5ms

-

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP-B

AT45DB161E-SHF-B

Adesto Technologies

IC FLASH 16MBIT 85MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 16Mb (528 Bytes x 4096 pages)
Memory Interface: SPI
Clock Frequency: 85MHz
Write Cycle Time - Word, Page: 8µs, 4ms
Access Time: -
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.209", 5.30mm Width)

재고12,774

FLASH

16Mb (528 Bytes x 4096 pages)

SPI

85MHz

8µs, 4ms

-

2.3 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

MX25L4006EPI-12G

Macronix

IC FLASH 4MBIT 86MHZ 8DIP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 4Mb (512K x 8)
Memory Interface: SPI
Clock Frequency: 86MHz
Write Cycle Time - Word, Page: 50µs, 3ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

패키지: 8-DIP (0.300", 7.62mm)

재고21,558

FLASH

FLASH - NOR

4Mb (512K x 8)

SPI

86MHz

50µs, 3ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

DS28E04S-100+

Maxim Integrated

IC EEPROM 4KBIT 1WIRE 16SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (256 x 16)
Memory Interface: 1-Wire?
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 2µs
Voltage - Supply: -
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

패키지: 16-SOIC (0.154", 3.90mm Width)

재고47,100

EEPROM

4Kb (256 x 16)

1-Wire?

-

2µs

-

-40°C ~ 85°C (TA)

Surface Mount

16-SOIC (0.154", 3.90mm Width)

16-SOIC

24AA512-I/WF22K

Microchip Technology

IC EEPROM 512K I2C 400KHZ WAFER

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 512Kb (64K x 8)
Memory Interface: I²C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: Die

재고7,152

EEPROM

512Kb (64K x 8)

I²C

400kHz

5ms

900ns

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

Die

S29GL01GS11FHSS63

Cypress Semiconductor Corp

IC FLASH 1G PARALLEL 64BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gb (64M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 110ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (13x11)

패키지: 64-LBGA

재고7,568

FLASH

FLASH - NOR

1Gb (64M x 16)

Parallel

-

60ns

110ns

2.7 V ~ 3.6 V

0°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-FBGA (13x11)

CY7C1062AV25-10BGI

Cypress Semiconductor Corp

IC SRAM 16MBIT PARALLEL 119PBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10 ns
Voltage - Supply: 2.4V ~ 2.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

패키지: -

Request a Quote

SRAM

SRAM - Asynchronous

16Mbit

Parallel

-

10ns

10 ns

2.4V ~ 2.6V

-40°C ~ 85°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

MT53E1D1BZW-DC-TR

Micron Technology Inc.

LPDDR4 BGA Z42M

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

W25N02JWSFIF-TR

Winbond Electronics

IC FLASH 2GBIT SPI/QUAD 16SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 2Gbit
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 700µs
Access Time: 6 ns
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

패키지: -

Request a Quote

FLASH

FLASH - NAND (SLC)

2Gbit

SPI - Quad I/O, QPI, DTR

166 MHz

700µs

6 ns

1.7V ~ 1.95V

-40°C ~ 85°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

24CSM01T-I-SN

Microchip Technology

1MBIT 3.4MHZ I2C SERIAL EEPROM,

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Mbit
Memory Interface: I2C
Clock Frequency: 3.4 MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 400 ns
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

Request a Quote

EEPROM

1Mbit

I2C

3.4 MHz

5ms

400 ns

1.7V ~ 5.5V

-40°C ~ 85°C (TC)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

MT58L256L32PT-6

Micron Technology Inc.

IC SRAM 8MBIT PARALLEL 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Standard
Memory Size: 8Mbit
Memory Interface: Parallel
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: -
Access Time: 3.5 ns
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20.1)

패키지: -

Request a Quote

SRAM

SRAM - Standard

8Mbit

Parallel

166 MHz

-

3.5 ns

3.135V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20.1)

IS42S83200L-7BL-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 256MBIT PAR 54TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mbit
Memory Interface: LVTTL
Clock Frequency: 143 MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)

패키지: -

Request a Quote

DRAM

SDRAM

256Mbit

LVTTL

143 MHz

-

5.4 ns

3V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

54-TFBGA

54-TFBGA (8x8)

24CS512-E-SN66KVAO

Microchip Technology

IC EEPROM 512KBIT I2C 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 512Kbit
Memory Interface: I2C
Clock Frequency: 3.4 MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 400 ns
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

Request a Quote

EEPROM

512Kbit

I2C

3.4 MHz

5ms

400 ns

1.7V ~ 5.5V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

MT29AZ2B1BHGTN-18IT-111-TR

Micron Technology Inc.

IC FLASH RAM 1G PARALLEL

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-