페이지 1291 - 메모리 | 집적 회로(IC) | Heisener Electronics
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기록 62,144
페이지  1,291/2,220
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부품 번호
제조업체
설명
패키지
재고
수량
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
CG8233AAT
Cypress Semiconductor Corp

IC SRAM MICROPOWER

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,840
-
-
-
-
-
-
-
-
-
-
-
-
hot CYD18S72V-133BBC
Cypress Semiconductor Corp

IC SRAM 18MBIT 133MHZ 484FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Synchronous
  • Memory Size: 18Mb (256K x 72)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 484-BGA
  • Supplier Device Package: 484-FBGA (23x23)
패키지: 484-BGA
재고6,176
SRAM
SRAM - Dual Port, Synchronous
18Mb (256K x 72)
Parallel
133MHz
-
5ns
3.135 V ~ 3.465 V
0°C ~ 70°C (TA)
Surface Mount
484-BGA
484-FBGA (23x23)
CY7C027V-15AXIT
Cypress Semiconductor Corp

IC SRAM 512KBIT 15NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 512Kb (32K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 15ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
패키지: 100-LQFP
재고7,040
SRAM
SRAM - Dual Port, Asynchronous
512Kb (32K x 16)
Parallel
-
15ns
15ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
M50FW080NB5TG TR
Micron Technology Inc.

IC FLASH 8MBIT 33MHZ 32TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 8Mb (1M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 33MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 250ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-TFSOP (0.488", 12.40mm Width)
  • Supplier Device Package: 32-TSOP (8x14)
패키지: 32-TFSOP (0.488", 12.40mm Width)
재고2,256
FLASH
FLASH - NOR
8Mb (1M x 8)
Parallel
33MHz
-
250ns
3 V ~ 3.6 V
-20°C ~ 85°C (TA)
Surface Mount
32-TFSOP (0.488", 12.40mm Width)
32-TSOP (8x14)
CY7C1399B-15ZXIT
Cypress Semiconductor Corp

IC SRAM 256KBIT 15NS 28TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 15ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-TSSOP (0.465", 11.80mm Width)
  • Supplier Device Package: 28-TSOP I
패키지: 28-TSSOP (0.465", 11.80mm Width)
재고3,504
SRAM
SRAM - Asynchronous
256Kb (32K x 8)
Parallel
-
15ns
15ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
28-TSSOP (0.465", 11.80mm Width)
28-TSOP I
hot CY7C199C-15PC
Cypress Semiconductor Corp

IC SRAM 256KBIT 15NS 28DIP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 15ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 28-DIP (0.300", 7.62mm)
  • Supplier Device Package: 28-PDIP
패키지: 28-DIP (0.300", 7.62mm)
재고6,784
SRAM
SRAM - Asynchronous
256Kb (32K x 8)
Parallel
-
15ns
15ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Through Hole
28-DIP (0.300", 7.62mm)
28-PDIP
AT27LV256A-12JI
Microchip Technology

IC OTP 256KBIT 120NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 120ns
  • Voltage - Supply: 3 V ~ 3.6 V, 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
패키지: 32-LCC (J-Lead)
재고5,360
EPROM
EPROM - OTP
256Kb (32K x 8)
Parallel
-
-
120ns
3 V ~ 3.6 V, 4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC
MT29F1T208ECCBBJ4-37:B TR
Micron Technology Inc.

IC FLASH 1.125TBIT 267MHZ 132BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 1.125Tb (144G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 267MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,224
FLASH
FLASH - NAND
1.125Tb (144G x 8)
Parallel
267MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
CY7C1061GE30-10BVXI
Cypress Semiconductor Corp

IC SRAM 16MBIT 10NS 48BGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 2.2 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFBGA
  • Supplier Device Package: 48-VFBGA (6x8)
패키지: 48-VFBGA
재고4,144
SRAM
SRAM - Asynchronous
16Mb (1M x 16)
Parallel
-
10ns
10ns
2.2 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-VFBGA
48-VFBGA (6x8)
IS43TR16128CL-15HBL
ISSI, Integrated Silicon Solution Inc

IC SDRAM 2GBIT 667MHZ 96BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 2Gb (128M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 667MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20ns
  • Voltage - Supply: 1.283 V ~ 1.45 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-BGA (13x9)
패키지: 96-TFBGA
재고3,360
DRAM
SDRAM - DDR3L
2Gb (128M x 16)
Parallel
667MHz
15ns
20ns
1.283 V ~ 1.45 V
0°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-BGA (13x9)
IS45S16800F-7BLA1-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 143MHZ 54BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 128Mb (8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 143MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TFBGA
  • Supplier Device Package: 54-TFBGA (8x8)
패키지: 54-TFBGA
재고6,240
DRAM
SDRAM
128Mb (8M x 16)
Parallel
143MHz
-
5.4ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
54-TFBGA
54-TFBGA (8x8)
24AA01SC-I/WF16K
Microchip Technology

IC EEPROM 1K I2C 400KHZ WAFER

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (128 x 8)
  • Memory Interface: I²C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: Die
재고6,800
EEPROM
EEPROM
1Kb (128 x 8)
I²C
400kHz
5ms
900ns
1.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
Die
Die
S29PL127J60TFID30H
Cypress Semiconductor Corp

IC FLASH MEM NOR 56PIN

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128M (8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 60ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 56-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 56-TSOP
패키지: 56-TFSOP (0.724", 18.40mm Width)
재고3,712
FLASH
FLASH - NOR
128M (8M x 16)
Parallel
-
60ns
60ns
2.7 V ~ 3.6 V
-40°C ~ 85°C
Surface Mount
56-TFSOP (0.724", 18.40mm Width)
56-TSOP
MT53D512M32D2NP-046 WT:D TR
Micron Technology Inc.

IC DRAM 16G 2133MHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 16Gb (512M x 32)
  • Memory Interface: -
  • Clock Frequency: 2133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,216
DRAM
SDRAM - Mobile LPDDR4
16Gb (512M x 32)
-
2133MHz
-
-
1.1V
-30°C ~ 85°C (TC)
-
-
-
W25Q20CLSNIG
Winbond Electronics

IC FLASH 2MBIT 50MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 2Mb (256K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 104MHz
  • Write Cycle Time - Word, Page: 800µs
  • Access Time: -
  • Voltage - Supply: 2.3V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고6,960
FLASH
FLASH - NOR
2Mb (256K x 8)
SPI
104MHz
800µs
-
2.3V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
UPD44645184AF5-E50-FQ1
Renesas Electronics Corporation

72-MB DDR II+ SRAM (2M X 36-BIT)

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
MT62F2G32D4DS-023-WT-C-TR
Micron Technology Inc.

LPDDR5 64GBIT 32 315/315 TFBGA 4

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR5
  • Memory Size: 64Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 2.133 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.05V
  • Operating Temperature: -25°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 200-WFBGA
  • Supplier Device Package: 200-WFBGA (10x14.5)
패키지: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR5
64Gbit
Parallel
2.133 GHz
-
-
1.05V
-25°C ~ 85°C
Surface Mount
200-WFBGA
200-WFBGA (10x14.5)
BY25Q32CSTJG-R
BYTe Semiconductor

32 MBIT, 3.0V (2.7V TO 3.6V), -4

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 32Mbit
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 108 MHz
  • Write Cycle Time - Word, Page: 60µs, 4ms
  • Access Time: 7 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
Request a Quote
FLASH
FLASH - NOR (SLC)
32Mbit
SPI - Quad I/O, QPI
108 MHz
60µs, 4ms
7 ns
2.7V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
MT53E1536M32D4DE-046-AIT-C
Micron Technology Inc.

IC DRAM 48GBIT 2.133GHZ WFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 48Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 2.133 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-TFBGA
  • Supplier Device Package: 200-TFBGA (10x14.5)
패키지: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR4
48Gbit
Parallel
2.133 GHz
18ns
3.5 ns
1.06V ~ 1.17V
-40°C ~ 95°C (TC)
Surface Mount
200-TFBGA
200-TFBGA (10x14.5)
CY7C1041CV33-20ZXI
Cypress Semiconductor Corp

IC SRAM 4MBIT PARALLEL 44TSOP II

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20ns
  • Access Time: 20 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
패키지: -
Request a Quote
SRAM
SRAM - Asynchronous
4Mbit
Parallel
-
20ns
20 ns
3V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
W25N01GVSFIG-TR
Winbond Electronics

IC FLASH 1GBIT SPI/QUAD 16SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 1Gbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 104 MHz
  • Write Cycle Time - Word, Page: 700µs
  • Access Time: 7 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
패키지: -
Request a Quote
FLASH
FLASH - NAND (SLC)
1Gbit
SPI - Quad I/O
104 MHz
700µs
7 ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
S25HL02GTDPBHV153
Infineon Technologies

SEMPER

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 2Gbit
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 1.7ms
  • Access Time: 6.5 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-BGA (8x6)
패키지: -
Request a Quote
FLASH
FLASH - NOR (SLC)
2Gbit
SPI - Quad I/O, QPI
133 MHz
1.7ms
6.5 ns
2.7V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
24-TBGA
24-BGA (8x6)
AS4C256M16D4A-62BIN
Alliance Memory, Inc.

4G, DDR4, 256 X 16, 1.2V, 96-BAL

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 4Gbit
  • Memory Interface: POD
  • Clock Frequency: 1.6 GHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 18 ns
  • Voltage - Supply: 1.14V ~ 1.26V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-FBGA (7.5x13)
패키지: -
재고51
DRAM
SDRAM - DDR4
4Gbit
POD
1.6 GHz
15ns
18 ns
1.14V ~ 1.26V
-40°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-FBGA (7.5x13)
CY7C1019CV33-15ZXC
Cypress Semiconductor Corp

IC SRAM 1MBIT PARALLEL 32TSOP II

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 15 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-SOIC (0.400", 10.16mm Width)
  • Supplier Device Package: 32-TSOP II
패키지: -
Request a Quote
SRAM
SRAM - Asynchronous
1Mbit
Parallel
-
15ns
15 ns
3V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
32-SOIC (0.400", 10.16mm Width)
32-TSOP II
GD9FS2G8F2ALGI
GigaDevice Semiconductor (HK) Limited

LINEAR IC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 2Gbit
  • Memory Interface: ONFI
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 63-VFBGA
  • Supplier Device Package: 63-FBGA (9x11)
패키지: -
Request a Quote
FLASH
FLASH - NAND (SLC)
2Gbit
ONFI
-
25ns
20 ns
1.7V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
63-VFBGA
63-FBGA (9x11)
IS34ML02G081-TLI-TR
ISSI, Integrated Silicon Solution Inc

2 Gbit(x8, 1 bit ECC), TSOP-48,

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 2Gbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 20 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
패키지: -
Request a Quote
FLASH
FLASH - NAND (SLC)
2Gbit
Parallel
-
25ns
20 ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
IS49RL18640-093FBL
ISSI, Integrated Silicon Solution Inc

RLDRAM3 Memory, 1.15Gbit, x18, C

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: RLDRAM 3
  • Memory Size: 1.152Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 1.066 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 7.5 ns
  • Voltage - Supply: 1.28V ~ 1.42V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 168-LBGA
  • Supplier Device Package: 168-FBGA (13.5x13.5)
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DRAM
RLDRAM 3
1.152Gbit
Parallel
1.066 GHz
-
7.5 ns
1.28V ~ 1.42V
0°C ~ 95°C (TC)
Surface Mount
168-LBGA
168-FBGA (13.5x13.5)
IS49RL18320A-093EBLI
ISSI, Integrated Silicon Solution Inc

IC DRAM 576MBIT PAR 168FCBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: RLDRAM 3
  • Memory Size: 576Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 1.066 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 7.5 ns
  • Voltage - Supply: 1.28V ~ 1.42V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 168-LBGA
  • Supplier Device Package: 168-FBGA (13.5x13.5)
패키지: -
Request a Quote
DRAM
RLDRAM 3
576Mbit
Parallel
1.066 GHz
-
7.5 ns
1.28V ~ 1.42V
-40°C ~ 95°C (TC)
Surface Mount
168-LBGA
168-FBGA (13.5x13.5)