페이지 1515 - 메모리 | 집적 회로(IC) | Heisener Electronics
고객 문의
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* Please refer to the English Version as our Official Version.

메모리

기록 62,144
페이지  1,515/2,220
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
AT25M02-SSHD-B
Microchip Technology

IC EEPROM 2MBIT 5MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Mb (256K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 5MHz
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고5,616
EEPROM
EEPROM
2Mb (256K x 8)
SPI
5MHz
10ms
-
2.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
IDT71V3577SA80BQI
IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 8NS 165CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 4.5Mb (128K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 8ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-CABGA (13x15)
패키지: 165-TBGA
재고5,264
SRAM
SRAM - Synchronous
4.5Mb (128K x 36)
Parallel
-
-
8ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
165-TBGA
165-CABGA (13x15)
CY7C1381D-100BZIT
Cypress Semiconductor Corp

IC SRAM 18MBIT 100MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 18Mb (512K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 8.5ns
  • Voltage - Supply: 3.135 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (13x15)
패키지: 165-LBGA
재고6,256
SRAM
SRAM - Synchronous
18Mb (512K x 36)
Parallel
100MHz
-
8.5ns
3.135 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
165-LBGA
165-FBGA (13x15)
MT48LC16M8A2BB-75:G TR
Micron Technology Inc.

IC SDRAM 128MBIT 133MHZ 60FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 128Mb (16M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-FBGA
  • Supplier Device Package: 60-FBGA (8x16)
패키지: 60-FBGA
재고7,184
DRAM
SDRAM
128Mb (16M x 8)
Parallel
133MHz
15ns
5.4ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
60-FBGA
60-FBGA (8x16)
MT28F640J3FS-115 XMET TR
Micron Technology Inc.

IC FLASH 64MBIT 115NS 64FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 64Mb (8M x 8, 4M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 115ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-FBGA
  • Supplier Device Package: 64-FBGA (10x13)
패키지: 64-FBGA
재고2,528
FLASH
FLASH
64Mb (8M x 8, 4M x 16)
Parallel
-
-
115ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
64-FBGA
64-FBGA (10x13)
hot LH5164A-10L
Sharp Microelectronics

IC SRAM 64KBIT 100NS 28DIP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -10°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 28-DIP (0.600", 15.24mm)
  • Supplier Device Package: 28-DIP
패키지: 28-DIP (0.600", 15.24mm)
재고19,608
SRAM
SRAM
64Kb (8K x 8)
Parallel
-
100ns
100ns
4.5 V ~ 5.5 V
-10°C ~ 70°C (TA)
Through Hole
28-DIP (0.600", 15.24mm)
28-DIP
AT27C1024-15VC
Microchip Technology

IC OTP 1MBIT 150NS 40VSOP

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 1Mb (64K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 150ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 40-TFSOP (0.488", 12.40mm Width)
  • Supplier Device Package: 40-VSOP
패키지: 40-TFSOP (0.488", 12.40mm Width)
재고3,360
EPROM
EPROM - OTP
1Mb (64K x 16)
Parallel
-
-
150ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TC)
Surface Mount
40-TFSOP (0.488", 12.40mm Width)
40-VSOP
BQ4016YMC-70
Texas Instruments

IC NVSRAM 8MBIT 70NS 36DIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 8Mb (1M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 36-DIP Module (0.610", 15.49mm)
  • Supplier Device Package: 36-DIP Module (18.42x52.96)
패키지: 36-DIP Module (0.610", 15.49mm)
재고5,280
NVSRAM
NVSRAM (Non-Volatile SRAM)
8Mb (1M x 8)
Parallel
-
70ns
70ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Through Hole
36-DIP Module (0.610", 15.49mm)
36-DIP Module (18.42x52.96)
70V05S35PF
IDT, Integrated Device Technology Inc

IC SRAM 64KBIT 35NS 64TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 35ns
  • Access Time: 35ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-TQFP (14x14)
패키지: 64-LQFP
재고3,808
SRAM
SRAM - Dual Port, Asynchronous
64Kb (8K x 8)
Parallel
-
35ns
35ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
64-LQFP
64-TQFP (14x14)
IS61NLF102418B-7.5TQLI
ISSI, Integrated Silicon Solution Inc

IC SRAM 18MBIT 7.5NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 18Mb (1M x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 117MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 7.5ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-LQFP (14x20)
패키지: 100-LQFP
재고6,640
SRAM
SRAM - Synchronous
18Mb (1M x 18)
Parallel
117MHz
-
7.5ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-LQFP (14x20)
IS43TR82560B-15HBL
ISSI, Integrated Silicon Solution Inc

IC SDRAM 2GBIT 667MHZ 78BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 2Gb (256M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 667MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20ns
  • Voltage - Supply: 1.425 V ~ 1.575 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-TFBGA
  • Supplier Device Package: 78-TWBGA (8x10.5)
패키지: 78-TFBGA
재고2,064
DRAM
SDRAM - DDR3
2Gb (256M x 8)
Parallel
667MHz
15ns
20ns
1.425 V ~ 1.575 V
0°C ~ 95°C (TC)
Surface Mount
78-TFBGA
78-TWBGA (8x10.5)
AS4C4M16SA-5TCN
Alliance Memory, Inc.

IC SDRAM 64MBIT 200MHZ 54TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 64Mb (4M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: 2ns
  • Access Time: 4.5ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
패키지: 54-TSOP (0.400", 10.16mm Width)
재고4,848
DRAM
SDRAM
64Mb (4M x 16)
Parallel
200MHz
2ns
4.5ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
BR24S128FV-WE2
Rohm Semiconductor

IC EEPROM 128KBIT 400KHZ 8SSOPB

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 128Kb (16K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SSOPB
패키지: 8-TSSOP (0.173", 4.40mm Width)
재고3,264
EEPROM
EEPROM
128Kb (16K x 8)
I2C
400kHz
5ms
-
1.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-SSOPB
hot 24LC21A/SN
Microchip Technology

IC EEPROM 1KBIT 400KHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (128 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 900ns
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고120,636
EEPROM
EEPROM
1Kb (128 x 8)
I2C
400kHz
10ms
900ns
2.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
24C01C-E/SN
Microchip Technology

IC EEPROM 1KBIT 400KHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (128 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 100kHz
  • Write Cycle Time - Word, Page: 1.5ms
  • Access Time: 3500ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고2,320
EEPROM
EEPROM
1Kb (128 x 8)
I2C
100kHz
1.5ms
3500ns
4.5 V ~ 5.5 V
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
S25FL128LAGBHV033
Cypress Semiconductor Corp

IC NOR

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (16M x 8)
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-BGA (6x8)
패키지: 24-TBGA
재고5,952
FLASH
FLASH - NOR
128Mb (16M x 8)
SPI - Quad I/O, QPI
133MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 105°C (TA)
Surface Mount
24-TBGA
24-BGA (6x8)
hot AK6417CH
AKM Semiconductor Inc.

INTEGRATED CIRCUIT

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고14,316
-
-
-
-
-
-
-
-
-
-
-
-
CG8264AAT
Cypress Semiconductor Corp

IC SRAM

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,064
-
-
-
-
-
-
-
-
-
-
-
-
W972GG8KB25I
Winbond Electronics

IC DDR2 SDRAM 2GBIT 2.5NS 60WBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 2Gb (256M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 400MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 400ps
  • Voltage - Supply: 1.7V ~ 1.9V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 84-TFBGA
  • Supplier Device Package: 84-WBGA (8x12.5)
패키지: 84-TFBGA
재고4,848
DRAM
SDRAM - DDR2
2Gb (256M x 8)
Parallel
400MHz
15ns
400ps
1.7V ~ 1.9V
-40°C ~ 95°C (TC)
Surface Mount
84-TFBGA
84-WBGA (8x12.5)
24FC02T-I/OT
Microchip Technology

2KB I2C EEPROM 1MHZ 1.7-5.5V 5-S

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: I²C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 450ns
  • Voltage - Supply: 1.7V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SOT-23-5
패키지: SC-74A, SOT-753
재고5,632
EEPROM
EEPROM
2Kb (256 x 8)
I²C
1MHz
5ms
450ns
1.7V ~ 5.5V
-40°C ~ 85°C (TA)
Surface Mount
SC-74A, SOT-753
SOT-23-5
MB85RS16NPNF-G-JNE1
Fujitsu Semiconductor Memory Solution

16KBIT FRAM WITH SPI SERIAL INTE

  • Memory Type: Non-Volatile
  • Memory Format: FRAM
  • Technology: FRAM (Ferroelectric RAM)
  • Memory Size: 16Kbit
  • Memory Interface: SPI
  • Clock Frequency: 20 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 18 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 95°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
Request a Quote
FRAM
FRAM (Ferroelectric RAM)
16Kbit
SPI
20 MHz
-
18 ns
2.7V ~ 3.6V
-40°C ~ 95°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
7007S12PFI8
Renesas Electronics Corporation

IC RAM

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 256Kbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 80-LQFP
  • Supplier Device Package: 80-TQFP (14x14)
패키지: -
Request a Quote
SRAM
SRAM - Dual Port, Asynchronous
256Kbit
Parallel
-
12ns
12 ns
4.5V ~ 5.5V
-40°C ~ 85°C (TA)
Surface Mount
80-LQFP
80-TQFP (14x14)
71256SA12PI
Renesas Electronics Corporation

IC SRAM ASYNCH

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 256Kbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-TSSOP (0.465", 11.80mm Width)
  • Supplier Device Package: 28-TSOP
패키지: -
Request a Quote
SRAM
SRAM - Asynchronous
256Kbit
Parallel
-
12ns
12 ns
4.5V ~ 5.5V
-40°C ~ 85°C (TA)
Surface Mount
28-TSSOP (0.465", 11.80mm Width)
28-TSOP
SM662GEC-BESS-1
Silicon Motion, Inc.

IC FLASH 160GBIT EMMC 100BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 160Gbit
  • Memory Interface: eMMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 100-LBGA
  • Supplier Device Package: 100-BGA (14x18)
패키지: -
Request a Quote
FLASH
FLASH - NAND (SLC)
160Gbit
eMMC
-
-
-
-
-40°C ~ 85°C
Surface Mount
100-LBGA
100-BGA (14x18)
AS4C512M16D3LB-12BINTR
Alliance Memory, Inc.

IC DRAM 8GBIT PARALLEL 96FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 8Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 800 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.283V ~ 1.45V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-FBGA (13.5x9)
패키지: -
Request a Quote
DRAM
SDRAM - DDR3L
8Gbit
Parallel
800 MHz
15ns
20 ns
1.283V ~ 1.45V
-40°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-FBGA (13.5x9)
MT62F1536M64D8WT-031-XT-B-TR
Micron Technology Inc.

LPDDR5 96G 1.5GX64 FBGA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
GS82564Z18GB-400I
GSI Technology Inc.

IC SRAM 288MBIT PAR 119FPBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, ZBT
  • Memory Size: 288Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 400 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.3V ~ 2.7V, 3V ~ 3.6V
  • Operating Temperature: -40°C ~ 100°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 119-BGA
  • Supplier Device Package: 119-FPBGA (22x14)
패키지: -
Request a Quote
SRAM
SRAM - Synchronous, ZBT
288Mbit
Parallel
400 MHz
-
-
2.3V ~ 2.7V, 3V ~ 3.6V
-40°C ~ 100°C (TJ)
Surface Mount
119-BGA
119-FPBGA (22x14)
S25FL256SAGBHEA00
Infineon Technologies

IC FLASH 256MBIT SPI/QUAD 24BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -55°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-BGA (8x6)
패키지: -
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FLASH
FLASH - NOR
256Mbit
SPI - Quad I/O
133 MHz
-
-
2.7V ~ 3.6V
-55°C ~ 125°C (TA)
Surface Mount
24-TBGA
24-BGA (8x6)