페이지 1566 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
CY7C2570KV18-500BZC	Cypress Semiconductor Corp	IC SRAM 72MBIT 500MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, DDR II+ Memory Size: 72Mb (2M x 36) Memory Interface: Parallel Clock Frequency: 500MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	패키지: 165-LBGA	재고4,912	SRAM	SRAM - Synchronous, DDR II+	72Mb (2M x 36)	Parallel	500MHz	-	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
IDT71V3556S100BQG8	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 100MHZ 165CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 100MHz Write Cycle Time - Word, Page: - Access Time: 5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-CABGA (13x15)	패키지: 165-TBGA	재고2,960	SRAM	SRAM - Synchronous ZBT	4.5Mb (128K x 36)	Parallel	100MHz	-	5ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	165-TBGA	165-CABGA (13x15)
IS61LV12816L-10LQI	ISSI, Integrated Silicon Solution Inc	IC SRAM 2MBIT 10NS 44LQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 2Mb (128K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 3.135 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-LQFP Supplier Device Package: 44-LQFP (10x10)	패키지: 44-LQFP	재고7,216	SRAM	SRAM - Asynchronous	2Mb (128K x 16)	Parallel	-	10ns	10ns	3.135 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	44-LQFP	44-LQFP (10x10)
IS42S32800B-7BI-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 256MBIT 143MHZ 90BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mb (8M x 32) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: 5.5ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-LFBGA Supplier Device Package: 90-LFBGA (8x13)	패키지: 90-LFBGA	재고5,920	DRAM	SDRAM	256Mb (8M x 32)	Parallel	143MHz	-	5.5ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	90-LFBGA	90-LFBGA (8x13)
AT28BV16-25PC	Microchip Technology	IC EEPROM 16KBIT 250NS 24DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 3ms Access Time: 250ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Through Hole Package / Case: 24-DIP (0.600", 15.24mm) Supplier Device Package: 24-PDIP	패키지: 24-DIP (0.600", 15.24mm)	재고3,920	EEPROM	EEPROM	16Kb (2K x 8)	Parallel	-	3ms	250ns	2.7 V ~ 3.6 V	0°C ~ 70°C (TC)	Through Hole	24-DIP (0.600", 15.24mm)	24-PDIP
IS62WV20488BLL-25TLI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 16MBIT 25NS 44TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Mb (2M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 2.4 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	패키지: 44-TSOP (0.400", 10.16mm Width)	재고3,712	SRAM	SRAM - Asynchronous	16Mb (2M x 8)	Parallel	-	25ns	25ns	2.4 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
MR25H10MDFR	Everspin Technologies Inc.	IC MRAM 1MBIT 40MHZ 8DFN Memory Type: Non-Volatile Memory Format: RAM Technology: MRAM (Magnetoresistive RAM) Memory Size: 1Mb (128K x 8) Memory Interface: SPI Clock Frequency: 40MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-DFN-EP, Small Flag (5x6)	패키지: 8-VDFN Exposed Pad	재고4,512	RAM	MRAM (Magnetoresistive RAM)	1Mb (128K x 8)	SPI	40MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 125°C (TA)	Surface Mount	8-VDFN Exposed Pad	8-DFN-EP, Small Flag (5x6)
IS45S16160J-7CTLA1-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 256MBIT 143MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	패키지: 54-TSOP (0.400", 10.16mm Width)	재고5,648	DRAM	SDRAM	256Mb (16M x 16)	Parallel	143MHz	-	5.4ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
M25PX32-VMW6E	Micron Technology Inc.	IC FLASH 32MBIT 75MHZ 8SO Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (4M x 8) Memory Interface: SPI Clock Frequency: 75MHz Write Cycle Time - Word, Page: 15ms, 5ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.295", 7.50mm Width) Supplier Device Package: 8-SO W	패키지: 8-SOIC (0.295", 7.50mm Width)	재고180,684	FLASH	FLASH - NOR	32Mb (4M x 8)	SPI	75MHz	15ms, 5ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.295", 7.50mm Width)	8-SO W
24LC128T-E/SN	Microchip Technology	IC EEPROM 128KBIT 400KHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 128Kb (16K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고7,504	EEPROM	EEPROM	128Kb (16K x 8)	I2C	400kHz	5ms	900ns	2.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
93AA46BT-I/MC	Microchip Technology	IC EEPROM 1KBIT 2MHZ 8DFN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (64 x 16) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 6ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-VFDFN Exposed Pad Supplier Device Package: 8-DFN (2x3)	패키지: 8-VFDFN Exposed Pad	재고24,408	EEPROM	EEPROM	1Kb (64 x 16)	SPI	2MHz	6ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-VFDFN Exposed Pad	8-DFN (2x3)
S25FL512SAGMFVG10	Cypress Semiconductor Corp	IC FLASH 512MBIT 133MHZ 16SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (64M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	패키지: 16-SOIC (0.295", 7.50mm Width)	재고8,388	FLASH	FLASH - NOR	512Mb (64M x 8)	SPI - Quad I/O	133MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
MT29F1G08ABAEAWP-AITX:E TR	Micron Technology Inc.	IC FLASH 1G PARALLEL 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP	패키지: 48-TFSOP (0.724", 18.40mm Width)	재고22,752	FLASH	FLASH - NAND	1Gb (128M x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP
BR93H86RFJ-2CE2	Rohm Semiconductor	AUTOMOTIVE MICROWIRE BUS 16KBIT( Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (1K x 16) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 4ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP-J	패키지: 8-SOIC (0.154", 3.90mm Width)	재고24,252	EEPROM	EEPROM	16Kb (1K x 16)	SPI	2MHz	4ms	-	2.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP-J
AS7C351232-10BINTR	Alliance Memory, Inc.	IC SRAM 16M PARALLEL 90TFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Mb (512K x 32) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	패키지: 90-TFBGA	재고7,552	SRAM	SRAM - Asynchronous	16Mb (512K x 32)	Parallel	-	10ns	10ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
S29GL256N11FFIIH0	Cypress Semiconductor Corp	IC GATE NOR Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,656	-	-	-	-	-	-	-	-	-	-	-	-
CY7C1021CV26-15XEKJT	Cypress Semiconductor Corp	CY7C1021 - STANDARD SRAM, 64KX16 Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
BR24H256NUX-5ACTR	Rohm Semiconductor	IC EEPROM 256KBIT I2C 8VSON Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kbit Memory Interface: I2C Clock Frequency: 1 MHz Write Cycle Time - Word, Page: 3.5ms Access Time: - Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: VSON008X2030	패키지: -	재고15,912	EEPROM	EEPROM	256Kbit	I2C	1 MHz	3.5ms	-	1.7V ~ 5.5V	-40°C ~ 125°C (TA)	Surface Mount	8-UFDFN Exposed Pad	VSON008X2030
IS62WVS5128GBLL-45NLI-TR	ISSI, Integrated Silicon Solution Inc	4Mb, Serial SRAM, 2.7V-3.6V, 45M Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4Mbit Memory Interface: SPI - Quad I/O, SDI Clock Frequency: 45 MHz Write Cycle Time - Word, Page: - Access Time: 15 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	Request a Quote	SRAM	SRAM - Synchronous	4Mbit	SPI - Quad I/O, SDI	45 MHz	-	15 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
CG9026AT	Infineon Technologies	ASYNC Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
CY62138CV33LL-70BAI	Cypress Semiconductor Corp	IC SRAM 2MBIT PARALLEL 36FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 2Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 36-TFBGA Supplier Device Package: 36-FBGA (7x7)	패키지: -	Request a Quote	SRAM	SRAM - Asynchronous	2Mbit	Parallel	-	70ns	70 ns	3V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	36-TFBGA	36-FBGA (7x7)
BY25Q40GWUIG-R	BYTe Semiconductor	4MBIT, WIDE VCC (1.7V TO 3.6V), Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 4Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 85 MHz Write Cycle Time - Word, Page: 3ms Access Time: 17 ns Voltage - Supply: 1.65V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-USON (2x3)	패키지: -	Request a Quote	FLASH	FLASH - NOR (SLC)	4Mbit	SPI - Quad I/O	85 MHz	3ms	17 ns	1.65V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-UFDFN Exposed Pad	8-USON (2x3)
MT53E1D1BZW-DC	Micron Technology Inc.	LPDDR4 BGA Z42M Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT40A512M16TB-062E-R-TR	Micron Technology Inc.	IC DRAM 8GBIT PARALLEL 96FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 8Gbit Memory Interface: Parallel Clock Frequency: 1.6 GHz Write Cycle Time - Word, Page: 15ns Access Time: 19 ns Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (7.5x13)	패키지: -	재고1,833	DRAM	SDRAM - DDR4	8Gbit	Parallel	1.6 GHz	15ns	19 ns	1.14V ~ 1.26V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (7.5x13)
GS8256436GB-250I	GSI Technology Inc.	IC SRAM 288MBIT PAR 119FPBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, Standard Memory Size: 288Mbit Memory Interface: Parallel Clock Frequency: 250 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.3V ~ 2.7V, 3V ~ 3.6V Operating Temperature: -40°C ~ 100°C (TJ) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-FPBGA (22x14)	패키지: -	Request a Quote	SRAM	SRAM - Synchronous, Standard	288Mbit	Parallel	250 MHz	-	-	2.3V ~ 2.7V, 3V ~ 3.6V	-40°C ~ 100°C (TJ)	Surface Mount	119-BGA	119-FPBGA (22x14)
CG8776AFT	Infineon Technologies	FRAM Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT29F16T08GSLCEM9-QB-C	Micron Technology Inc.	QLC 16T 2TX8 FBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
W35N01JWTBIG	Winbond Electronics	1G-BIT OCTAL NAND FLASH, 1.8V Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 1Gbit Memory Interface: SPI - Octal I/O Clock Frequency: 166 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-TFBGA (8x6)	패키지: -	Request a Quote	FLASH	FLASH - NAND (SLC)	1Gbit	SPI - Octal I/O	166 MHz	-	-	1.7V ~ 1.95V	-40°C ~ 85°C (TA)	Surface Mount	24-TBGA	24-TFBGA (8x6)

CY7C2570KV18-500BZC

Cypress Semiconductor Corp

IC SRAM 72MBIT 500MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, DDR II+
Memory Size: 72Mb (2M x 36)
Memory Interface: Parallel
Clock Frequency: 500MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

패키지: 165-LBGA

재고4,912

SRAM

SRAM - Synchronous, DDR II+

72Mb (2M x 36)

Parallel

500MHz

-

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

IDT71V3556S100BQG8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 100MHZ 165CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: -
Access Time: 5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-CABGA (13x15)

패키지: 165-TBGA

재고2,960

SRAM

SRAM - Synchronous ZBT

4.5Mb (128K x 36)

Parallel

100MHz

-

5ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

165-TBGA

165-CABGA (13x15)

IS61LV12816L-10LQI

ISSI, Integrated Silicon Solution Inc

IC SRAM 2MBIT 10NS 44LQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 2Mb (128K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 3.135 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-LQFP
Supplier Device Package: 44-LQFP (10x10)

패키지: 44-LQFP

재고7,216

SRAM

SRAM - Asynchronous

2Mb (128K x 16)

Parallel

-

10ns

3.135 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

44-LQFP

44-LQFP (10x10)

IS42S32800B-7BI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 143MHZ 90BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mb (8M x 32)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: 5.5ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-LFBGA
Supplier Device Package: 90-LFBGA (8x13)

패키지: 90-LFBGA

재고5,920

DRAM

SDRAM

256Mb (8M x 32)

Parallel

143MHz

-

5.5ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

90-LFBGA

90-LFBGA (8x13)

AT28BV16-25PC

Microchip Technology

IC EEPROM 16KBIT 250NS 24DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 3ms
Access Time: 250ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Through Hole
Package / Case: 24-DIP (0.600", 15.24mm)
Supplier Device Package: 24-PDIP

패키지: 24-DIP (0.600", 15.24mm)

재고3,920

EEPROM

16Kb (2K x 8)

Parallel

-

3ms

250ns

2.7 V ~ 3.6 V

0°C ~ 70°C (TC)

Through Hole

24-DIP (0.600", 15.24mm)

24-PDIP

IS62WV20488BLL-25TLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 16MBIT 25NS 44TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mb (2M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 2.4 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

패키지: 44-TSOP (0.400", 10.16mm Width)

재고3,712

SRAM

SRAM - Asynchronous

16Mb (2M x 8)

Parallel

-

25ns

2.4 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

MR25H10MDFR

Everspin Technologies Inc.

IC MRAM 1MBIT 40MHZ 8DFN

Memory Type: Non-Volatile
Memory Format: RAM
Technology: MRAM (Magnetoresistive RAM)
Memory Size: 1Mb (128K x 8)
Memory Interface: SPI
Clock Frequency: 40MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-DFN-EP, Small Flag (5x6)

패키지: 8-VDFN Exposed Pad

재고4,512

RAM

MRAM (Magnetoresistive RAM)

1Mb (128K x 8)

SPI

40MHz

-

2.7 V ~ 3.6 V

-40°C ~ 125°C (TA)

Surface Mount

8-VDFN Exposed Pad

8-DFN-EP, Small Flag (5x6)

IS45S16160J-7CTLA1-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 143MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

패키지: 54-TSOP (0.400", 10.16mm Width)

재고5,648

DRAM

SDRAM

256Mb (16M x 16)

Parallel

143MHz

-

5.4ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

M25PX32-VMW6E

Micron Technology Inc.

IC FLASH 32MBIT 75MHZ 8SO

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8)
Memory Interface: SPI
Clock Frequency: 75MHz
Write Cycle Time - Word, Page: 15ms, 5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 8-SO W

패키지: 8-SOIC (0.295", 7.50mm Width)

재고180,684

FLASH

FLASH - NOR

32Mb (4M x 8)

SPI

75MHz

15ms, 5ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.295", 7.50mm Width)

8-SO W

24LC128T-E/SN

Microchip Technology

IC EEPROM 128KBIT 400KHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 128Kb (16K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고7,504

EEPROM

128Kb (16K x 8)

I2C

400kHz

5ms

900ns

2.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

93AA46BT-I/MC

Microchip Technology

IC EEPROM 1KBIT 2MHZ 8DFN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (64 x 16)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 6ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VFDFN Exposed Pad
Supplier Device Package: 8-DFN (2x3)

패키지: 8-VFDFN Exposed Pad

재고24,408

EEPROM

1Kb (64 x 16)

SPI

2MHz

6ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-VFDFN Exposed Pad

8-DFN (2x3)

S25FL512SAGMFVG10

Cypress Semiconductor Corp

IC FLASH 512MBIT 133MHZ 16SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (64M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

패키지: 16-SOIC (0.295", 7.50mm Width)

재고8,388

FLASH

FLASH - NOR

512Mb (64M x 8)

SPI - Quad I/O

133MHz

-

2.7 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

MT29F1G08ABAEAWP-AITX:E TR

Micron Technology Inc.

IC FLASH 1G PARALLEL 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP

패키지: 48-TFSOP (0.724", 18.40mm Width)

재고22,752

FLASH

FLASH - NAND

1Gb (128M x 8)

Parallel

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP

BR93H86RFJ-2CE2

Rohm Semiconductor

AUTOMOTIVE MICROWIRE BUS 16KBIT(

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (1K x 16)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 4ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP-J

패키지: 8-SOIC (0.154", 3.90mm Width)

재고24,252

EEPROM

16Kb (1K x 16)

SPI

2MHz

4ms

-

2.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP-J

AS7C351232-10BINTR

Alliance Memory, Inc.

IC SRAM 16M PARALLEL 90TFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mb (512K x 32)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

패키지: 90-TFBGA

재고7,552

SRAM

SRAM - Asynchronous

16Mb (512K x 32)

Parallel

-

10ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

S29GL256N11FFIIH0

Cypress Semiconductor Corp

IC GATE NOR

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,656

-

CY7C1021CV26-15XEKJT

Cypress Semiconductor Corp

CY7C1021 - STANDARD SRAM, 64KX16

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

BR24H256NUX-5ACTR

Rohm Semiconductor

IC EEPROM 256KBIT I2C 8VSON

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kbit
Memory Interface: I2C
Clock Frequency: 1 MHz
Write Cycle Time - Word, Page: 3.5ms
Access Time: -
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: VSON008X2030

패키지: -

재고15,912

EEPROM

256Kbit

I2C

1 MHz

3.5ms

-

1.7V ~ 5.5V

-40°C ~ 125°C (TA)

Surface Mount

8-UFDFN Exposed Pad

VSON008X2030

IS62WVS5128GBLL-45NLI-TR

ISSI, Integrated Silicon Solution Inc

4Mb, Serial SRAM, 2.7V-3.6V, 45M

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4Mbit
Memory Interface: SPI - Quad I/O, SDI
Clock Frequency: 45 MHz
Write Cycle Time - Word, Page: -
Access Time: 15 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

Request a Quote

SRAM

SRAM - Synchronous

4Mbit

SPI - Quad I/O, SDI

45 MHz

-

15 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

CG9026AT

Infineon Technologies

ASYNC

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

CY62138CV33LL-70BAI

Cypress Semiconductor Corp

IC SRAM 2MBIT PARALLEL 36FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 2Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 36-TFBGA
Supplier Device Package: 36-FBGA (7x7)

패키지: -

Request a Quote

SRAM

SRAM - Asynchronous

2Mbit

Parallel

-

70ns

70 ns

3V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

36-TFBGA

36-FBGA (7x7)

BY25Q40GWUIG-R

BYTe Semiconductor

4MBIT, WIDE VCC (1.7V TO 3.6V),

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 4Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 85 MHz
Write Cycle Time - Word, Page: 3ms
Access Time: 17 ns
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-USON (2x3)

패키지: -

Request a Quote

FLASH

FLASH - NOR (SLC)

4Mbit

SPI - Quad I/O

85 MHz

3ms

17 ns

1.65V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-UFDFN Exposed Pad

8-USON (2x3)

MT53E1D1BZW-DC

Micron Technology Inc.

LPDDR4 BGA Z42M

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

MT40A512M16TB-062E-R-TR

Micron Technology Inc.

IC DRAM 8GBIT PARALLEL 96FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 8Gbit
Memory Interface: Parallel
Clock Frequency: 1.6 GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 19 ns
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (7.5x13)

패키지: -

재고1,833

DRAM

SDRAM - DDR4

8Gbit

Parallel

1.6 GHz

15ns

19 ns

1.14V ~ 1.26V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (7.5x13)

GS8256436GB-250I

GSI Technology Inc.

IC SRAM 288MBIT PAR 119FPBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, Standard
Memory Size: 288Mbit
Memory Interface: Parallel
Clock Frequency: 250 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.3V ~ 2.7V, 3V ~ 3.6V
Operating Temperature: -40°C ~ 100°C (TJ)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-FPBGA (22x14)

패키지: -

Request a Quote

SRAM

SRAM - Synchronous, Standard

288Mbit

Parallel

250 MHz

-

2.3V ~ 2.7V, 3V ~ 3.6V

-40°C ~ 100°C (TJ)

Surface Mount

119-BGA

119-FPBGA (22x14)

CG8776AFT

Infineon Technologies

FRAM

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

MT29F16T08GSLCEM9-QB-C

Micron Technology Inc.

QLC 16T 2TX8 FBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

W35N01JWTBIG

Winbond Electronics

1G-BIT OCTAL NAND FLASH, 1.8V

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 1Gbit
Memory Interface: SPI - Octal I/O
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-TFBGA (8x6)

패키지: -

Request a Quote

FLASH

FLASH - NAND (SLC)

1Gbit

SPI - Octal I/O

166 MHz

-

1.7V ~ 1.95V

-40°C ~ 85°C (TA)

Surface Mount

24-TBGA

24-TFBGA (8x6)