페이지 1597 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT29F64G08CFACBWP-12:C TR	Micron Technology Inc.	IC FLASH 64GBIT 83MHZ 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 64Gb (8G x 8) Memory Interface: Parallel Clock Frequency: 83MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,632	FLASH	FLASH - NAND	64Gb (8G x 8)	Parallel	83MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
RC28F640P33BF60A	Micron Technology Inc.	IC FLASH 64MBIT 60NS 64EASYBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (4M x 16) Memory Interface: Parallel Clock Frequency: 52MHz Write Cycle Time - Word, Page: 60ns Access Time: 60ns Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 64-TBGA Supplier Device Package: 64-EasyBGA (10x13)	패키지: 64-TBGA	재고7,184	FLASH	FLASH - NOR	64Mb (4M x 16)	Parallel	52MHz	60ns	60ns	2.3 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	64-TBGA	64-EasyBGA (10x13)
PF48F4400P0VBQE3	Micron Technology Inc.	IC FLASH 512MBIT 100NS 88SCSP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 52MHz Write Cycle Time - Word, Page: 100ns Access Time: 100ns Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 88-TFBGA, CSPBGA Supplier Device Package: 88-SCSP (11x8)	패키지: 88-TFBGA, CSPBGA	재고6,896	FLASH	FLASH - NOR	512Mb (32M x 16)	Parallel	52MHz	100ns	100ns	1.7 V ~ 2 V	-40°C ~ 85°C (TC)	Surface Mount	88-TFBGA, CSPBGA	88-SCSP (11x8)
AT45DB321D-MWU	Microchip Technology	IC FLASH 32MBIT 66MHZ 8VDFN Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 32Mb (528 Bytes x 8192 pages) Memory Interface: SPI Clock Frequency: 66MHz Write Cycle Time - Word, Page: 6ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-VDFN (8x6)	패키지: 8-VDFN Exposed Pad	재고84,108	FLASH	FLASH	32Mb (528 Bytes x 8192 pages)	SPI	66MHz	6ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	8-VDFN Exposed Pad	8-VDFN (8x6)
M25P20-VMP6TG TR	Micron Technology Inc.	IC FLASH 2MBIT 50MHZ 8VFDFPN Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 2Mb (256K x 8) Memory Interface: SPI Clock Frequency: 50MHz Write Cycle Time - Word, Page: 15ms, 5ms Access Time: - Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-VFQFPN (6x5)	패키지: 8-VDFN Exposed Pad	재고6,128	FLASH	FLASH - NOR	2Mb (256K x 8)	SPI	50MHz	15ms, 5ms	-	2.3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-VDFN Exposed Pad	8-VFQFPN (6x5)
MT46V64M8TG-6T:F TR	Micron Technology Inc.	IC SDRAM 512MBIT 167MHZ 66TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (64M x 8) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 66-TSSOP (0.400", 10.16mm Width) Supplier Device Package: 66-TSOP	패키지: 66-TSSOP (0.400", 10.16mm Width)	재고5,936	DRAM	SDRAM - DDR	512Mb (64M x 8)	Parallel	167MHz	15ns	700ps	2.3 V ~ 2.7 V	0°C ~ 70°C (TA)	Surface Mount	66-TSSOP (0.400", 10.16mm Width)	66-TSOP
AT24C64-10TI-1.8	Microchip Technology	IC EEPROM 64KBIT 400KHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64Kb (8K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 10ms Access Time: 900ns Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고7,520	EEPROM	EEPROM	64Kb (8K x 8)	I2C	400kHz	10ms	900ns	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
AT28HC256-90JC	Microchip Technology	IC EEPROM 256KBIT 90NS 32PLCC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ms Access Time: 90ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	패키지: 32-LCC (J-Lead)	재고9,672	EEPROM	EEPROM	256Kb (32K x 8)	Parallel	-	10ms	90ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TC)	Surface Mount	32-LCC (J-Lead)	32-PLCC
AT24C128N-10SI	Microchip Technology	IC EEPROM 128KBIT 1MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 128Kb (16K x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 10ms Access Time: 550ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고4,608	EEPROM	EEPROM	128Kb (16K x 8)	I2C	1MHz	10ms	550ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IS64LF25636A-7.5B3LA3-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 9MBIT 7.5NS 165BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 9Mb (256K x 36) Memory Interface: Parallel Clock Frequency: 117MHz Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-TFBGA (13x15)	패키지: 165-TBGA	재고5,328	SRAM	SRAM - Synchronous	9Mb (256K x 36)	Parallel	117MHz	-	7.5ns	3.135 V ~ 3.465 V	-40°C ~ 125°C (TA)	Surface Mount	165-TBGA	165-TFBGA (13x15)
IS43TR85120A-15HBL-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 4GBIT 667MHZ 78BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: 667MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-TWBGA (9x10.5)	패키지: 78-TFBGA	재고4,992	DRAM	SDRAM - DDR3	4Gb (512M x 8)	Parallel	667MHz	15ns	20ns	1.425 V ~ 1.575 V	0°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-TWBGA (9x10.5)
93C66AT-I/ST	Microchip Technology	IC EEPROM 4KBIT 2MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (512 x 8) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 2ms Access Time: - Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고2,720	EEPROM	EEPROM	4Kb (512 x 8)	SPI	2MHz	2ms	-	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
93C66C-I/ST	Microchip Technology	IC EEPROM 4KBIT 3MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (512 x 8, 256 x 16) Memory Interface: SPI Clock Frequency: 3MHz Write Cycle Time - Word, Page: 2ms Access Time: - Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고2,976	EEPROM	EEPROM	4Kb (512 x 8, 256 x 16)	SPI	3MHz	2ms	-	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
DS24L65P+	Maxim Integrated	IC EEPROM 64BIT 1WIRE 6TSOC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 512b (32 Bytes x 2 pages) Memory Interface: 1-Wire? Clock Frequency: 400kHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.71 V ~ 1.89 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 6-LSOJ (0.148", 3.76mm Width) Supplier Device Package: 6-TSOC	패키지: 6-LSOJ (0.148", 3.76mm Width)	재고19,680	EEPROM	EEPROM	512b (32 Bytes x 2 pages)	1-Wire?	400kHz	-	-	1.71 V ~ 1.89 V	-40°C ~ 85°C (TA)	Surface Mount	6-LSOJ (0.148", 3.76mm Width)	6-TSOC
24AA16-I/WF16K	Microchip Technology	IC EEPROM 16K I2C 400KHZ WAFER Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: I²C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: Die	재고3,696	EEPROM	EEPROM	16Kb (2K x 8)	I²C	400kHz	5ms	900ns	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	Die	Die
IS49NLS18320A-25WBL	ISSI, Integrated Silicon Solution Inc	IC DRAM 576M PARALLEL 400MHZ Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 576Mb (32M x 18) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 144-TBGA Supplier Device Package: 144-TWBGA (11x18.5)	패키지: 144-TBGA	재고6,576	DRAM	DRAM	576Mb (32M x 18)	Parallel	400MHz	-	20ns	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	144-TBGA	144-TWBGA (11x18.5)
CY7C1312LV18-300BZXI	Cypress Semiconductor Corp	IC SRAM 18M PARALLEL 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II Memory Size: 18Mb (1M x 18) Memory Interface: Parallel Clock Frequency: 300MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	패키지: 165-LBGA	재고5,056	SRAM	SRAM - Synchronous, QDR II	18Mb (1M x 18)	Parallel	300MHz	-	-	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
S34ML04G100TFA003	Cypress Semiconductor Corp	IC FLASH 4G PARALLEL 48TSOP I Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	패키지: 48-TFSOP (0.724", 18.40mm Width)	재고6,624	FLASH	FLASH - NAND	4Gb (512M x 8)	Parallel	-	25ns	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
S29GL256P90FFSS80	Cypress Semiconductor Corp	IC FLASH 256M PARALLEL 64BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 90ns Access Time: 90ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (13x11)	패키지: 64-LBGA	재고7,824	FLASH	FLASH - NOR	256Mb (32M x 8)	Parallel	-	90ns	90ns	2.7 V ~ 3.6 V	0°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-FBGA (13x11)
S29JL032J70TFI413	Cypress Semiconductor Corp	IC FLASH 32M PARALLEL 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (4M x 8, 2M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP	패키지: 48-TFSOP (0.724", 18.40mm Width)	재고7,488	FLASH	FLASH - NOR	32Mb (4M x 8, 2M x 16)	Parallel	-	70ns	70ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP
W25Q16DVSSJP TR	Winbond Electronics	IC FLASH MEMORY 16MB Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,440	-	-	-	-	-	-	-	-	-	-	-	-
EM-10 8GB I-GRADE	Swissbit	IND EMBEDDED MMC EM-10 8 GB MLC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (MLC) Memory Size: 8GB Memory Interface: eMMC Clock Frequency: 52MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 153-VFBGA Supplier Device Package: 153-BGA (11.5x13)	패키지: 153-VFBGA	재고2,656	FLASH	FLASH - NAND (MLC)	8GB	eMMC	52MHz	-	-	2.7V ~ 3.6V	-40°C ~ 105°C	Surface Mount	153-VFBGA	153-BGA (11.5x13)
MX25L25645GXDR-08G	Macronix	SERIAL NOR Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8) Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 133MHz Write Cycle Time - Word, Page: 30µs, 750µs Access Time: - Voltage - Supply: 2.65V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-BGA (6x8)	패키지: 24-TBGA	재고7,696	FLASH	FLASH - NOR	256Mb (32M x 8)	SPI - Quad I/O, QPI, DTR	133MHz	30µs, 750µs	-	2.65V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	24-TBGA	24-BGA (6x8)
MT62F3G32D8DV-023-IT-B-TR	Micron Technology Inc.	LPDDR5 96G 3GX32 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR5 Memory Size: 96Gbit Memory Interface: Parallel Clock Frequency: 4.266 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 95°C Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR5	96Gbit	Parallel	4.266 GHz	-	-	-	-40°C ~ 95°C	-	-	-
IS26KS256S-DPBLA100	Infineon Technologies	INFINEON Memory Type: Non-Volatile Memory Format: FLASH Technology: HyperFlash Memory Size: 256Mbit Memory Interface: HyperBus Clock Frequency: 166 MHz Write Cycle Time - Word, Page: - Access Time: 96 ns Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-VFBGA (6x8)	패키지: -	Request a Quote	FLASH	HyperFlash	256Mbit	HyperBus	166 MHz	-	96 ns	1.7V ~ 1.95V	-40°C ~ 85°C (TA)	Surface Mount	24-VBGA	24-VFBGA (6x8)
W66BQ6NBHAHJ	Winbond Electronics	2GB LPDDR4X, X16, 2133MHZ, -40C~ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4X Memory Size: 2Gbit Memory Interface: LVSTL_06 Clock Frequency: 2.133 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.6 ns Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 100-VFBGA Supplier Device Package: 100-VFBGA (10x7.5)	패키지: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4X	2Gbit	LVSTL_06	2.133 GHz	18ns	3.6 ns	1.06V ~ 1.17V, 1.7V ~ 1.95V	-40°C ~ 105°C (TC)	Surface Mount	100-VFBGA	100-VFBGA (10x7.5)
AS7C34098A-8TAN	Alliance Memory, Inc.	MEMORY Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 8ns Access Time: 8 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	패키지: -	Request a Quote	SRAM	SRAM - Asynchronous	4Mbit	Parallel	-	8ns	8 ns	3V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
SM662GXD-BEST-1	Silicon Motion, Inc.	IC FLASH 1TBIT EMMC 100BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (TLC) Memory Size: 1Tbit Memory Interface: eMMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -25°C ~ 85°C Mounting Type: Surface Mount Package / Case: 100-LBGA Supplier Device Package: 100-BGA (14x18)	패키지: -	Request a Quote	FLASH	FLASH - NAND (TLC)	1Tbit	eMMC	-	-	-	-	-25°C ~ 85°C	Surface Mount	100-LBGA	100-BGA (14x18)

MT29F64G08CFACBWP-12:C TR

Micron Technology Inc.

IC FLASH 64GBIT 83MHZ 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 64Gb (8G x 8)
Memory Interface: Parallel
Clock Frequency: 83MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,632

FLASH

FLASH - NAND

64Gb (8G x 8)

Parallel

83MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

RC28F640P33BF60A

Micron Technology Inc.

IC FLASH 64MBIT 60NS 64EASYBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (4M x 16)
Memory Interface: Parallel
Clock Frequency: 52MHz
Write Cycle Time - Word, Page: 60ns
Access Time: 60ns
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 64-TBGA
Supplier Device Package: 64-EasyBGA (10x13)

패키지: 64-TBGA

재고7,184

FLASH

FLASH - NOR

64Mb (4M x 16)

Parallel

52MHz

60ns

2.3 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

64-TBGA

64-EasyBGA (10x13)

PF48F4400P0VBQE3

Micron Technology Inc.

IC FLASH 512MBIT 100NS 88SCSP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 52MHz
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 88-TFBGA, CSPBGA
Supplier Device Package: 88-SCSP (11x8)

패키지: 88-TFBGA, CSPBGA

재고6,896

FLASH

FLASH - NOR

512Mb (32M x 16)

Parallel

52MHz

100ns

1.7 V ~ 2 V

-40°C ~ 85°C (TC)

Surface Mount

88-TFBGA, CSPBGA

88-SCSP (11x8)

AT45DB321D-MWU

Microchip Technology

IC FLASH 32MBIT 66MHZ 8VDFN

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 32Mb (528 Bytes x 8192 pages)
Memory Interface: SPI
Clock Frequency: 66MHz
Write Cycle Time - Word, Page: 6ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-VDFN (8x6)

패키지: 8-VDFN Exposed Pad

재고84,108

FLASH

32Mb (528 Bytes x 8192 pages)

SPI

66MHz

6ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

8-VDFN Exposed Pad

8-VDFN (8x6)

M25P20-VMP6TG TR

Micron Technology Inc.

IC FLASH 2MBIT 50MHZ 8VFDFPN

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 2Mb (256K x 8)
Memory Interface: SPI
Clock Frequency: 50MHz
Write Cycle Time - Word, Page: 15ms, 5ms
Access Time: -
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-VFQFPN (6x5)

패키지: 8-VDFN Exposed Pad

재고6,128

FLASH

FLASH - NOR

2Mb (256K x 8)

SPI

50MHz

15ms, 5ms

-

2.3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-VDFN Exposed Pad

8-VFQFPN (6x5)

MT46V64M8TG-6T:F TR

Micron Technology Inc.

IC SDRAM 512MBIT 167MHZ 66TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512Mb (64M x 8)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package: 66-TSOP

패키지: 66-TSSOP (0.400", 10.16mm Width)

재고5,936

DRAM

SDRAM - DDR

512Mb (64M x 8)

Parallel

167MHz

15ns

700ps

2.3 V ~ 2.7 V

0°C ~ 70°C (TA)

Surface Mount

66-TSSOP (0.400", 10.16mm Width)

66-TSOP

AT24C64-10TI-1.8

Microchip Technology

IC EEPROM 64KBIT 400KHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kb (8K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 10ms
Access Time: 900ns
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고7,520

EEPROM

64Kb (8K x 8)

I2C

400kHz

10ms

900ns

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

AT28HC256-90JC

Microchip Technology

IC EEPROM 256KBIT 90NS 32PLCC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ms
Access Time: 90ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC

패키지: 32-LCC (J-Lead)

재고9,672

EEPROM

256Kb (32K x 8)

Parallel

-

10ms

90ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TC)

Surface Mount

32-LCC (J-Lead)

32-PLCC

AT24C128N-10SI

Microchip Technology

IC EEPROM 128KBIT 1MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 128Kb (16K x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 10ms
Access Time: 550ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고4,608

EEPROM

128Kb (16K x 8)

I2C

1MHz

10ms

550ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

IS64LF25636A-7.5B3LA3-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 9MBIT 7.5NS 165BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 9Mb (256K x 36)
Memory Interface: Parallel
Clock Frequency: 117MHz
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-TFBGA (13x15)

패키지: 165-TBGA

재고5,328

SRAM

SRAM - Synchronous

9Mb (256K x 36)

Parallel

117MHz

-

7.5ns

3.135 V ~ 3.465 V

-40°C ~ 125°C (TA)

Surface Mount

165-TBGA

165-TFBGA (13x15)

IS43TR85120A-15HBL-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 4GBIT 667MHZ 78BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: 667MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-TWBGA (9x10.5)

패키지: 78-TFBGA

재고4,992

DRAM

SDRAM - DDR3

4Gb (512M x 8)

Parallel

667MHz

15ns

20ns

1.425 V ~ 1.575 V

0°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-TWBGA (9x10.5)

93C66AT-I/ST

Microchip Technology

IC EEPROM 4KBIT 2MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (512 x 8)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 2ms
Access Time: -
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고2,720

EEPROM

4Kb (512 x 8)

SPI

2MHz

2ms

-

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

93C66C-I/ST

Microchip Technology

IC EEPROM 4KBIT 3MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (512 x 8, 256 x 16)
Memory Interface: SPI
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 2ms
Access Time: -
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고2,976

EEPROM

4Kb (512 x 8, 256 x 16)

SPI

3MHz

2ms

-

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

DS24L65P+

Maxim Integrated

IC EEPROM 64BIT 1WIRE 6TSOC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 512b (32 Bytes x 2 pages)
Memory Interface: 1-Wire?
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.71 V ~ 1.89 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-LSOJ (0.148", 3.76mm Width)
Supplier Device Package: 6-TSOC

패키지: 6-LSOJ (0.148", 3.76mm Width)

재고19,680

EEPROM

512b (32 Bytes x 2 pages)

1-Wire?

400kHz

-

1.71 V ~ 1.89 V

-40°C ~ 85°C (TA)

Surface Mount

6-LSOJ (0.148", 3.76mm Width)

6-TSOC

24AA16-I/WF16K

Microchip Technology

IC EEPROM 16K I2C 400KHZ WAFER

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: I²C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: Die

재고3,696

EEPROM

16Kb (2K x 8)

I²C

400kHz

5ms

900ns

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

Die

IS49NLS18320A-25WBL

ISSI, Integrated Silicon Solution Inc

IC DRAM 576M PARALLEL 400MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 576Mb (32M x 18)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 144-TBGA
Supplier Device Package: 144-TWBGA (11x18.5)

패키지: 144-TBGA

재고6,576

DRAM

576Mb (32M x 18)

Parallel

400MHz

-

20ns

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

144-TBGA

144-TWBGA (11x18.5)

CY7C1312LV18-300BZXI

Cypress Semiconductor Corp

IC SRAM 18M PARALLEL 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 18Mb (1M x 18)
Memory Interface: Parallel
Clock Frequency: 300MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

패키지: 165-LBGA

재고5,056

SRAM

SRAM - Synchronous, QDR II

18Mb (1M x 18)

Parallel

300MHz

-

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

S34ML04G100TFA003

Cypress Semiconductor Corp

IC FLASH 4G PARALLEL 48TSOP I

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

패키지: 48-TFSOP (0.724", 18.40mm Width)

재고6,624

FLASH

FLASH - NAND

4Gb (512M x 8)

Parallel

-

25ns

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I

S29GL256P90FFSS80

Cypress Semiconductor Corp

IC FLASH 256M PARALLEL 64BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (13x11)

패키지: 64-LBGA

재고7,824

FLASH

FLASH - NOR

256Mb (32M x 8)

Parallel

-

90ns

2.7 V ~ 3.6 V

0°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-FBGA (13x11)

S29JL032J70TFI413

Cypress Semiconductor Corp

IC FLASH 32M PARALLEL 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8, 2M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP

패키지: 48-TFSOP (0.724", 18.40mm Width)

재고7,488

FLASH

FLASH - NOR

32Mb (4M x 8, 2M x 16)

Parallel

-

70ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP

W25Q16DVSSJP TR

Winbond Electronics

IC FLASH MEMORY 16MB

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,440

-

EM-10 8GB I-GRADE

Swissbit

IND EMBEDDED MMC EM-10 8 GB MLC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (MLC)
Memory Size: 8GB
Memory Interface: eMMC
Clock Frequency: 52MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 153-VFBGA
Supplier Device Package: 153-BGA (11.5x13)

패키지: 153-VFBGA

재고2,656

FLASH

FLASH - NAND (MLC)

8GB

eMMC

52MHz

-

2.7V ~ 3.6V

-40°C ~ 105°C

Surface Mount

153-VFBGA

153-BGA (11.5x13)

MX25L25645GXDR-08G

Macronix

SERIAL NOR

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8)
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 30µs, 750µs
Access Time: -
Voltage - Supply: 2.65V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-BGA (6x8)

패키지: 24-TBGA

재고7,696

FLASH

FLASH - NOR

256Mb (32M x 8)

SPI - Quad I/O, QPI, DTR

133MHz

30µs, 750µs

-

2.65V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

24-TBGA

24-BGA (6x8)

MT62F3G32D8DV-023-IT-B-TR

Micron Technology Inc.

LPDDR5 96G 3GX32 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR5
Memory Size: 96Gbit
Memory Interface: Parallel
Clock Frequency: 4.266 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 95°C
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR5

96Gbit

Parallel

4.266 GHz

-

-40°C ~ 95°C

-

IS26KS256S-DPBLA100

Infineon Technologies

INFINEON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: HyperFlash
Memory Size: 256Mbit
Memory Interface: HyperBus
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: -
Access Time: 96 ns
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-VFBGA (6x8)

패키지: -

Request a Quote

FLASH

HyperFlash

256Mbit

HyperBus

166 MHz

-

96 ns

1.7V ~ 1.95V

-40°C ~ 85°C (TA)

Surface Mount

24-VBGA

24-VFBGA (6x8)

W66BQ6NBHAHJ

Winbond Electronics

2GB LPDDR4X, X16, 2133MHZ, -40C~

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4X
Memory Size: 2Gbit
Memory Interface: LVSTL_06
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.6 ns
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 100-VFBGA
Supplier Device Package: 100-VFBGA (10x7.5)

패키지: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR4X

2Gbit

LVSTL_06

2.133 GHz

18ns

3.6 ns

1.06V ~ 1.17V, 1.7V ~ 1.95V

-40°C ~ 105°C (TC)

Surface Mount

100-VFBGA

100-VFBGA (10x7.5)

AS7C34098A-8TAN

Alliance Memory, Inc.

MEMORY

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 8ns
Access Time: 8 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

패키지: -

Request a Quote

SRAM

SRAM - Asynchronous

4Mbit

Parallel

-

8ns

8 ns

3V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

SM662GXD-BEST-1

Silicon Motion, Inc.

IC FLASH 1TBIT EMMC 100BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (TLC)
Memory Size: 1Tbit
Memory Interface: eMMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -25°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 100-LBGA
Supplier Device Package: 100-BGA (14x18)

패키지: -

Request a Quote

FLASH

FLASH - NAND (TLC)

1Tbit

eMMC

-

-25°C ~ 85°C

Surface Mount

100-LBGA

100-BGA (14x18)