페이지 1622 - 메모리 | 집적 회로(IC) | Heisener Electronics
고객 문의
SalesDept@heisener.com +86-755-83210559 ext. 805
로그인/등록
Language Translation

* Please refer to the English Version as our Official Version.

BOM
카트 0

메모리

기록 62,144
페이지  1,622/2,220
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot M58WR064KB70ZB6E
Micron Technology Inc.

IC FLASH 64MBIT 70NS 56VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mb (4M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 66MHz
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 1.7 V ~ 2 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 56-VFBGA
  • Supplier Device Package: 56-VFBGA (7.7x9)
패키지: 56-VFBGA
재고23,892
FLASH
FLASH - NOR
64Mb (4M x 16)
Parallel
66MHz
70ns
70ns
1.7 V ~ 2 V
-40°C ~ 85°C (TA)
Surface Mount
56-VFBGA
56-VFBGA (7.7x9)
MT29F128G08AMAAAC5-ITZ:A
Micron Technology Inc.

IC FLASH 128GBIT 52VLGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 128Gb (16G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 52-VLGA
  • Supplier Device Package: 52-VLGA (18x14)
패키지: 52-VLGA
재고2,320
FLASH
FLASH - NAND
128Gb (16G x 8)
Parallel
-
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
52-VLGA
52-VLGA (18x14)
LH5116NA-10F
Sharp Microelectronics

IC SRAM 16KBIT 100NS 24SOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-SOIC (0.339", 8.60mm Width)
  • Supplier Device Package: 24-SOP
패키지: 24-SOIC (0.339", 8.60mm Width)
재고3,760
SRAM
SRAM
16Kb (2K x 8)
Parallel
-
100ns
100ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
24-SOIC (0.339", 8.60mm Width)
24-SOP
70T3399S133BC
IDT, Integrated Device Technology Inc

IC SRAM 2MBIT 133MHZ 256CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Synchronous
  • Memory Size: 2Mb (128K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 4.2ns
  • Voltage - Supply: 2.4 V ~ 2.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-LBGA
  • Supplier Device Package: 256-CABGA (17x17)
패키지: 256-LBGA
재고5,328
SRAM
SRAM - Dual Port, Synchronous
2Mb (128K x 18)
Parallel
133MHz
-
4.2ns
2.4 V ~ 2.6 V
0°C ~ 70°C (TA)
Surface Mount
256-LBGA
256-CABGA (17x17)
MT29TZZZ7D7EKKBT-107 W.97V TR
Micron Technology Inc.

256MX8/128MX16 MCP PLASTIC 1.8V

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,672
-
-
-
-
-
-
-
-
-
-
-
-
71V65803S150PFG
IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 150MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous ZBT
  • Memory Size: 9Mb (512K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 150MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.8ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
패키지: 100-LQFP
재고5,520
SRAM
SRAM - Synchronous ZBT
9Mb (512K x 18)
Parallel
150MHz
-
3.8ns
3.135 V ~ 3.465 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
CY7C1049G30-10VXIT
Cypress Semiconductor Corp

IC SRAM 4MBIT 10NS 36SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 2.2 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 36-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package: 36-SOJ
패키지: 36-BSOJ (0.400", 10.16mm Width)
재고5,456
SRAM
SRAM - Asynchronous
4Mb (512K x 8)
Parallel
-
10ns
10ns
2.2 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
36-BSOJ (0.400", 10.16mm Width)
36-SOJ
IS42SM32200M-75BLI
ISSI, Integrated Silicon Solution Inc

IC SDRAM 64MBIT 133MHZ 90BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile
  • Memory Size: 64Mb (2M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 6ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-TFBGA (8x13)
패키지: 90-TFBGA
재고3,728
DRAM
SDRAM - Mobile
64Mb (2M x 32)
Parallel
133MHz
-
6ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
90-TFBGA
90-TFBGA (8x13)
CY15B128Q-SXA
Cypress Semiconductor Corp

IC FRAM 128KBIT 40MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FRAM
  • Technology: FRAM (Ferroelectric RAM)
  • Memory Size: 128Kb (16K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 40MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고4,384
FRAM
FRAM (Ferroelectric RAM)
128Kb (16K x 8)
SPI
40MHz
-
-
2 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
AS6C1008-55TINL
Alliance Memory, Inc.

IC SRAM 1MBIT 55NS 32TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 32-TSOP I
패키지: 32-TFSOP (0.724", 18.40mm Width)
재고6,160
SRAM
SRAM - Asynchronous
1Mb (128K x 8)
Parallel
-
55ns
55ns
2.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
32-TFSOP (0.724", 18.40mm Width)
32-TSOP I
hot SST25VF020B-80-4I-Q3AE-T
Microchip Technology

IC FLASH 2MBIT 80MHZ 8USON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 2Mb (256K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 80MHz
  • Write Cycle Time - Word, Page: 10µs
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UFDFN Exposed Pad
  • Supplier Device Package: 8-USON (2x3)
패키지: 8-UFDFN Exposed Pad
재고21,804
FLASH
FLASH
2Mb (256K x 8)
SPI
80MHz
10µs
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-UFDFN Exposed Pad
8-USON (2x3)
24C02CT-E/ST
Microchip Technology

IC EEPROM 2KBIT 400KHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 100kHz
  • Write Cycle Time - Word, Page: 1.5ms
  • Access Time: 3500ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
패키지: 8-TSSOP (0.173", 4.40mm Width)
재고6,016
EEPROM
EEPROM
2Kb (256 x 8)
I2C
100kHz
1.5ms
3500ns
4.5 V ~ 5.5 V
-40°C ~ 125°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
11AA040T-I/MS
Microchip Technology

IC EEPROM 4KBIT 100KHZ 8MSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (512 x 8)
  • Memory Interface: Single Wire
  • Clock Frequency: 100kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 8-MSOP
패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
재고2,928
EEPROM
EEPROM
4Kb (512 x 8)
Single Wire
100kHz
5ms
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
8-MSOP
MT53D512M32D2DS-053 AIT:D
Micron Technology Inc.

IC DRAM 16G 1866MHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 16Gb (512M x 32)
  • Memory Interface: -
  • Clock Frequency: 1866MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,240
DRAM
SDRAM - Mobile LPDDR4
16Gb (512M x 32)
-
1866MHz
-
-
1.1V
-40°C ~ 85°C (TA)
-
-
-
S29GL512T11TFB023
Cypress Semiconductor Corp

IC 512 MB FLASH MEMORY

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,240
-
-
-
-
-
-
-
-
-
-
-
-
IS43TR16640BL-125KBLI
ISSI, Integrated Silicon Solution Inc

IC DRAM 1G PARALLEL 96TWBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 1Gb (64M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 800MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20ns
  • Voltage - Supply: 1.283 V ~ 1.45 V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-TWBGA (9x13)
패키지: 96-TFBGA
재고7,168
DRAM
SDRAM - DDR3L
1Gb (64M x 16)
Parallel
800MHz
15ns
20ns
1.283 V ~ 1.45 V
-40°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-TWBGA (9x13)
S29GL256P90FAIR23
Cypress Semiconductor Corp

IC FLASH 256M PARALLEL 64BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (32M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 90ns
  • Access Time: 90ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-FBGA (13x11)
패키지: 64-LBGA
재고3,424
FLASH
FLASH - NOR
256Mb (32M x 8)
Parallel
-
90ns
90ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
64-LBGA
64-FBGA (13x11)
S29VS256R0SBHW013
Cypress Semiconductor Corp

IC FLASH 256M PARALLEL 44FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 108MHz
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 80ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -25°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-VFBGA
  • Supplier Device Package: 44-FBGA (7.7x6.2)
패키지: 44-VFBGA
재고7,264
FLASH
FLASH - NOR
256Mb (16M x 16)
Parallel
108MHz
60ns
80ns
1.7 V ~ 1.95 V
-25°C ~ 85°C (TA)
Surface Mount
44-VFBGA
44-FBGA (7.7x6.2)
S25FL256SAGBHAC03
Cypress Semiconductor Corp

IC 256 MB FLASH MEMORY

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (32M x 8)
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-BGA (8x6)
패키지: 24-TBGA
재고6,448
FLASH
FLASH - NOR
256Mb (32M x 8)
SPI - Quad I/O
133MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
24-TBGA
24-BGA (8x6)
AS4C512M8D3B-12BANTR
Alliance Memory, Inc.

IC DRAM 4G PARALLEL 78FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 4Gb (512M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 800MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20ns
  • Voltage - Supply: 1.425 V ~ 1.575 V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-VFBGA
  • Supplier Device Package: 78-FBGA (10.5x9)
패키지: 78-VFBGA
재고2,672
DRAM
SDRAM - DDR3
4Gb (512M x 8)
Parallel
800MHz
15ns
20ns
1.425 V ~ 1.575 V
-40°C ~ 105°C (TC)
Surface Mount
78-VFBGA
78-FBGA (10.5x9)
MT53B512M16D1Z11MWC1
Micron Technology Inc.

LPDDR4 8G DIE 512MX16

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고7,056
-
-
-
-
-
-
-
-
-
-
-
-
S25FL256SAGNFM003
Infineon Technologies

IC FLASH 256MBIT SPI/QUAD 8WSON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 256Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 750µs
  • Access Time: 6.5 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (6x8)
패키지: -
Request a Quote
FLASH
FLASH - NOR (SLC)
256Mbit
SPI - Quad I/O
133 MHz
750µs
6.5 ns
2.7V ~ 3.6V
-40°C ~ 125°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (6x8)
S25HS02GTDPBHV150
Infineon Technologies

Nor

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 2Gbit
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 1.7ms
  • Access Time: 6 ns
  • Voltage - Supply: 1.7V ~ 2V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-FBGA (8x8)
패키지: -
Request a Quote
FLASH
FLASH - NOR (SLC)
2Gbit
SPI - Quad I/O, QPI
133 MHz
1.7ms
6 ns
1.7V ~ 2V
-40°C ~ 105°C (TA)
Surface Mount
24-TBGA
24-FBGA (8x8)
CY7C0830AV-167BBC
Cypress Semiconductor Corp

IC SRAM 1.152MBIT PAR 144FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Synchronous
  • Memory Size: 1.152Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 167 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 3.135V ~ 3.465V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 144-LBGA
  • Supplier Device Package: 144-FBGA (13x13)
패키지: -
Request a Quote
SRAM
SRAM - Dual Port, Synchronous
1.152Mbit
Parallel
167 MHz
-
-
3.135V ~ 3.465V
0°C ~ 70°C (TA)
Surface Mount
144-LBGA
144-FBGA (13x13)
W25M512JWBIQ
Winbond Electronics

IC FLASH 512MBIT SPI 24TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 512Mbit
  • Memory Interface: SPI
  • Clock Frequency: 104 MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 7 ns
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-TFBGA (6x8)
패키지: -
Request a Quote
FLASH
FLASH - NOR
512Mbit
SPI
104 MHz
5ms
7 ns
1.7V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
24-TBGA
24-TFBGA (6x8)
CG8985AM
Infineon Technologies

IC

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
MT62F4D1AZX-DC-TR
Micron Technology Inc.

SPECIAL/CUSTOM LPDDR5 PLASTIC MI

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
IS46LQ32640AL-062TBLA2-TR
ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +105C), 2

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4X
  • Memory Size: 2Gbit
  • Memory Interface: LVSTL
  • Clock Frequency: 1.6 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-TFBGA
  • Supplier Device Package: 200-TFBGA (10x14.5)
패키지: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR4X
2Gbit
LVSTL
1.6 GHz
18ns
3.5 ns
1.06V ~ 1.17V, 1.7V ~ 1.95V
-40°C ~ 105°C (TC)
Surface Mount
200-TFBGA
200-TFBGA (10x14.5)