페이지 165 - 메모리 | 집적 회로(IC) | Heisener Electronics
고객 문의
SalesDept@heisener.com 86-755-83210559-841
로그인/등록
Language Translation

* Please refer to the English Version as our Official Version.

BOM
카트 0

메모리

기록 62,144
페이지  165/2,220
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
93LC76AT-E/ST
Microchip Technology

IC EEPROM 8KBIT 3MHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 8Kb (1K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 3MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
패키지: 8-TSSOP (0.173", 4.40mm Width)
재고2,640
EEPROM
EEPROM
8Kb (1K x 8)
SPI
3MHz
5ms
-
2.5 V ~ 5.5 V
-40°C ~ 125°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
MT29F64G08AKABAC5-IT:B
Micron Technology Inc.

IC FLASH 64GBIT 52VLGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 64Gb (8G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 52-VLGA
  • Supplier Device Package: 52-VLGA (18x14)
패키지: 52-VLGA
재고3,440
FLASH
FLASH - NAND
64Gb (8G x 8)
Parallel
-
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
52-VLGA
52-VLGA (18x14)
MT29F1G08ABCHC-ET:C TR
Micron Technology Inc.

IC FLASH 1GBIT 35NS 63VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 63-VFBGA
  • Supplier Device Package: 63-VFBGA
패키지: 63-VFBGA
재고2,048
FLASH
FLASH - NAND
1Gb (128M x 8)
Parallel
-
-
-
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
63-VFBGA
63-VFBGA
IDT71V67802S150PF
IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 150MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 9Mb (512K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 150MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.8ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
패키지: 100-LQFP
재고6,608
SRAM
SRAM - Synchronous
9Mb (512K x 18)
Parallel
150MHz
-
3.8ns
3.135 V ~ 3.465 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
IDT7164L25YI8
IDT, Integrated Device Technology Inc

IC SRAM 64KBIT 25NS 28SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-BSOJ (0.300", 7.62mm Width)
  • Supplier Device Package: 28-SOJ
패키지: 28-BSOJ (0.300", 7.62mm Width)
재고4,640
SRAM
SRAM - Asynchronous
64Kb (8K x 8)
Parallel
-
25ns
25ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
28-BSOJ (0.300", 7.62mm Width)
28-SOJ
TE48F4400P0VB00A
Micron Technology Inc.

IC FLASH 512MBIT 85NS 56TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 512Mb (32M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 40MHz
  • Write Cycle Time - Word, Page: 85ns
  • Access Time: 85ns
  • Voltage - Supply: 1.7 V ~ 2 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 56-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 56-TSOP (14x20)
패키지: 56-TFSOP (0.724", 18.40mm Width)
재고5,920
FLASH
FLASH - NOR
512Mb (32M x 16)
Parallel
40MHz
85ns
85ns
1.7 V ~ 2 V
-40°C ~ 85°C (TC)
Surface Mount
56-TFSOP (0.724", 18.40mm Width)
56-TSOP (14x20)
IS61NLP25636A-200B3I-TR
ISSI, Integrated Silicon Solution Inc

IC SRAM 9MBIT 200MHZ 165BGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 9Mb (256K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.1ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TFBGA
  • Supplier Device Package: 165-TFBGA (13x15)
패키지: 165-TFBGA
재고4,464
SRAM
SRAM - Synchronous
9Mb (256K x 36)
Parallel
200MHz
-
3.1ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
165-TFBGA
165-TFBGA (13x15)
IS61LV25616AL-10KLI-TR
ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT 10NS 44SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 3.135 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package: 44-SOJ
패키지: 44-BSOJ (0.400", 10.16mm Width)
재고6,848
SRAM
SRAM - Asynchronous
4Mb (256K x 16)
Parallel
-
10ns
10ns
3.135 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
44-BSOJ (0.400", 10.16mm Width)
44-SOJ
AT45DB1282-TC
Microchip Technology

IC FLASH 128MBIT 40MHZ 40TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 128Mb (1056 Bytes x 16,384 pages)
  • Memory Interface: SPI
  • Clock Frequency: 40MHz
  • Write Cycle Time - Word, Page: 50ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 40-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 40-TSOP
패키지: 40-TFSOP (0.724", 18.40mm Width)
재고2,384
FLASH
FLASH
128Mb (1056 Bytes x 16,384 pages)
SPI
40MHz
50ms
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TC)
Surface Mount
40-TFSOP (0.724", 18.40mm Width)
40-TSOP
AT27C080-90RC
Microchip Technology

IC OTP 8MBIT 90NS 32SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 8Mb (1M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 90ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-SOIC (0.445", 11.30mm Width)
  • Supplier Device Package: 32-SOIC
패키지: 32-SOIC (0.445", 11.30mm Width)
재고4,368
EPROM
EPROM - OTP
8Mb (1M x 8)
Parallel
-
-
90ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TC)
Surface Mount
32-SOIC (0.445", 11.30mm Width)
32-SOIC
AT27C256R-70RC
Microchip Technology

IC OTP 256KBIT 70NS 28SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 70ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 28-SOIC (0.342", 8.69mm Width)
  • Supplier Device Package: 28-SOIC
패키지: 28-SOIC (0.342", 8.69mm Width)
재고7,472
EPROM
EPROM - OTP
256Kb (32K x 8)
Parallel
-
-
70ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TC)
Surface Mount
28-SOIC (0.342", 8.69mm Width)
28-SOIC
70T3339S133BCI8
IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 133MHZ 256CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Synchronous
  • Memory Size: 9Mb (512K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 4.2ns
  • Voltage - Supply: 2.4 V ~ 2.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-LBGA
  • Supplier Device Package: 256-CABGA (17x17)
패키지: 256-LBGA
재고3,136
SRAM
SRAM - Dual Port, Synchronous
9Mb (512K x 18)
Parallel
133MHz
-
4.2ns
2.4 V ~ 2.6 V
-40°C ~ 85°C (TA)
Surface Mount
256-LBGA
256-CABGA (17x17)
MT29F1T08CPCABH8-6:A TR
Micron Technology Inc.

IC FLASH 1TBIT 167MHZ 152LBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 1Tb (128G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,528
FLASH
FLASH - NAND
1Tb (128G x 8)
Parallel
166MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
IS61QDB451236A-250M3L
ISSI, Integrated Silicon Solution Inc

IC SRAM 18MBIT 250MHZ 165BGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, QUAD
  • Memory Size: 18Mb (512K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 250MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 1.8ns
  • Voltage - Supply: 1.71 V ~ 1.89 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-LFBGA (15x17)
패키지: 165-LBGA
재고5,664
SRAM
SRAM - Synchronous, QUAD
18Mb (512K x 36)
Parallel
250MHz
-
1.8ns
1.71 V ~ 1.89 V
0°C ~ 70°C (TA)
Surface Mount
165-LBGA
165-LFBGA (15x17)
hot CY14B104LA-BA45XIT
Cypress Semiconductor Corp

IC NVSRAM 4MBIT 45NS 48FBGA

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-FBGA (6x10)
패키지: 48-TFBGA
재고8,520
NVSRAM
NVSRAM (Non-Volatile SRAM)
4Mb (512K x 8)
Parallel
-
45ns
45ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFBGA
48-FBGA (6x10)
FM25V20A-DGTR
Cypress Semiconductor Corp

IC FRAM 2MBIT 40MHZ 8TDFN

  • Memory Type: Non-Volatile
  • Memory Format: FRAM
  • Technology: FRAM (Ferroelectric RAM)
  • Memory Size: 2Mb (256K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 40MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-TDFN (5x6)
패키지: 8-WDFN Exposed Pad
재고6,816
FRAM
FRAM (Ferroelectric RAM)
2Mb (256K x 8)
SPI
40MHz
-
-
2 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-TDFN (5x6)
IS43R86400D-5BL
ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 200MHZ 60BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR
  • Memory Size: 512Mb (64M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 700ps
  • Voltage - Supply: 2.5 V ~ 2.7 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-TFBGA (8x13)
패키지: 60-TFBGA
재고7,680
DRAM
SDRAM - DDR
512Mb (64M x 8)
Parallel
200MHz
15ns
700ps
2.5 V ~ 2.7 V
0°C ~ 70°C (TA)
Surface Mount
60-TFBGA
60-TFBGA (8x13)
23K640-I/P
Microchip Technology

IC SRAM 64KBIT 20MHZ 8DIP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 20MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
패키지: 8-DIP (0.300", 7.62mm)
재고5,424
SRAM
SRAM
64Kb (8K x 8)
SPI
20MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
MT40A2G8FSE-083E:A
Micron Technology Inc.

IC DRAM 16G PARALLEL 1.2GHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 16Gb (2G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 1.2GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.26 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,104
DRAM
SDRAM - DDR4
16Gb (2G x 8)
Parallel
1.2GHz
-
-
1.14 V ~ 1.26 V
0°C ~ 95°C (TC)
-
-
-
S29GL01GS10FAI010
Cypress Semiconductor Corp

IC FLASH 1G PARALLEL 64BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 1Gb (64M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 100ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-FBGA (13x11)
패키지: 64-LBGA
재고6,528
FLASH
FLASH - NOR
1Gb (64M x 16)
Parallel
-
60ns
100ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
64-LBGA
64-FBGA (13x11)
SFEM032GB1EA1TO-I-LF-111-E16
Swissbit

IC FLASH 16GBIT EMMC 153LFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (pSLC)
  • Memory Size: 16Gb (2G x 8)
  • Memory Interface: eMMC
  • Clock Frequency: 400MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 153-LFBGA
  • Supplier Device Package: 153-LFBGA (11.5x13)
패키지: 153-LFBGA
재고6,400
FLASH
FLASH - NAND (pSLC)
16Gb (2G x 8)
eMMC
400MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C
Surface Mount
153-LFBGA
153-LFBGA (11.5x13)
71321SA55TFI8
IDT, Integrated Device Technology Inc

IC SRAM 16K PARALLEL 64TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-TQFP (10x10)
패키지: 64-LQFP
재고6,336
SRAM
SRAM - Dual Port, Asynchronous
16Kb (2K x 8)
Parallel
-
55ns
55ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
64-LQFP
64-TQFP (10x10)
MT29F4G16ABAFAH4-AIT:F
Micron Technology Inc.

IC FLASH SLC 4G 256MX16 FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 4Gb (256M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 63-VFBGA
  • Supplier Device Package: 63-VFBGA (9x11)
패키지: 63-VFBGA
재고5,376
FLASH
FLASH - NAND (SLC)
4Gb (256M x 16)
Parallel
-
-
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
63-VFBGA
63-VFBGA (9x11)
24CS512T-E-SN
Microchip Technology

IC EEPROM 512KBIT I2C 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 512Kbit
  • Memory Interface: I2C
  • Clock Frequency: 3.4 MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 400 ns
  • Voltage - Supply: 1.7V ~ 5.5V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: -
재고9,819
EEPROM
EEPROM
512Kbit
I2C
3.4 MHz
5ms
400 ns
1.7V ~ 5.5V
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
W29N02KVDIAF-TR
Winbond Electronics

IC FLASH 2GBIT PARALLEL 48VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 2Gbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 20 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFBGA
  • Supplier Device Package: 48-VFBGA (8x6.5)
패키지: -
Request a Quote
FLASH
FLASH - NAND (SLC)
2Gbit
Parallel
-
25ns
20 ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
48-VFBGA
48-VFBGA (8x6.5)
IS45S16400N-7BLA1-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 64MBIT PAR 54TFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 64Mbit
  • Memory Interface: LVTTL
  • Clock Frequency: 143 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TFBGA
  • Supplier Device Package: 54-TFBGA (8x8)
패키지: -
Request a Quote
DRAM
SDRAM
64Mbit
LVTTL
143 MHz
-
5.4 ns
3V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
54-TFBGA
54-TFBGA (8x8)
R1EV58064BTCNBI-B2
Renesas Electronics Corporation

IC EEPROM 64KBIT PAR 28TSOP I

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 64Kbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 100 ns
  • Voltage - Supply: 2.7V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-TSSOP (0.465", 11.80mm Width)
  • Supplier Device Package: 28-TSOP I
패키지: -
Request a Quote
EEPROM
EEPROM
64Kbit
Parallel
-
10ms
100 ns
2.7V ~ 5.5V
-40°C ~ 85°C (TA)
Surface Mount
28-TSSOP (0.465", 11.80mm Width)
28-TSOP I
SM671PAD-BFSS
Silicon Motion, Inc.

IC FLASH 320GBIT UFS3.1 153BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 320Gbit
  • Memory Interface: UFS3.1
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 153-TBGA
  • Supplier Device Package: 153-BGA (11.5x13)
패키지: -
Request a Quote
FLASH
FLASH - NAND (SLC)
320Gbit
UFS3.1
-
-
-
-
-40°C ~ 85°C
Surface Mount
153-TBGA
153-BGA (11.5x13)