페이지 169 - 메모리 | 집적 회로(IC) | Heisener Electronics
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메모리

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부품 번호
제조업체
설명
패키지
재고
수량
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
EDBM432B3PB-1D-F-D
Micron Technology Inc.

IC SDRAM 12GBIT 533MHZ 168VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR2
  • Memory Size: 12Gb (384M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 533MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.95 V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 168-VFBGA
  • Supplier Device Package: 168-FBGA (12x12)
패키지: 168-VFBGA
재고6,864
DRAM
SDRAM - Mobile LPDDR2
12Gb (384M x 32)
Parallel
533MHz
-
-
1.14 V ~ 1.95 V
-30°C ~ 85°C (TC)
Surface Mount
168-VFBGA
168-FBGA (12x12)
MT29F1G08ABADAWP-ITE:D
Micron Technology Inc.

IC FLASH 1GBIT 20NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고7,824
FLASH
FLASH - NAND
1Gb (128M x 8)
Parallel
-
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
-
-
-
SST26VF016BA-104I/UB
Microchip Technology

IC FLASH 16MBIT 104MHZ 8USON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 16Mb (2M x 8)
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 104MHz
  • Write Cycle Time - Word, Page: 1.5ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: -
  • Supplier Device Package: 8-USON (4x3)
패키지: -
재고3,472
FLASH
FLASH
16Mb (2M x 8)
SPI - Quad I/O
104MHz
1.5ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
-
8-USON (4x3)
IDT71V416YL10Y8
IDT, Integrated Device Technology Inc

IC SRAM 4MBIT 10NS 44SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package: 44-SOJ
패키지: 44-BSOJ (0.400", 10.16mm Width)
재고3,568
SRAM
SRAM - Asynchronous
4Mb (256K x 16)
Parallel
-
10ns
10ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
44-BSOJ (0.400", 10.16mm Width)
44-SOJ
IDT7164L20TPI
IDT, Integrated Device Technology Inc

IC SRAM 64KBIT 20NS 28DIP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20ns
  • Access Time: 20ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 28-DIP (0.300", 7.62mm)
  • Supplier Device Package: 28-PDIP
패키지: 28-DIP (0.300", 7.62mm)
재고6,016
SRAM
SRAM - Asynchronous
64Kb (8K x 8)
Parallel
-
20ns
20ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Through Hole
28-DIP (0.300", 7.62mm)
28-PDIP
CY62126DV30L-55BVXE
Cypress Semiconductor Corp

IC SRAM 1MBIT 55NS 48VFBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (64K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 2.2 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFBGA
  • Supplier Device Package: 48-VFBGA (6x8)
패키지: 48-VFBGA
재고2,528
SRAM
SRAM - Asynchronous
1Mb (64K x 16)
Parallel
-
55ns
55ns
2.2 V ~ 3.6 V
-40°C ~ 125°C (TA)
Surface Mount
48-VFBGA
48-VFBGA (6x8)
CY7C199CL-15ZXC
Cypress Semiconductor Corp

IC SRAM 256KBIT 15NS 28TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 15ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-TSSOP (0.465", 11.80mm Width)
  • Supplier Device Package: 28-TSOP I
패키지: 28-TSSOP (0.465", 11.80mm Width)
재고5,728
SRAM
SRAM - Asynchronous
256Kb (32K x 8)
Parallel
-
15ns
15ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
28-TSSOP (0.465", 11.80mm Width)
28-TSOP I
AT25HP512C1-10CI-1.8
Microchip Technology

IC EEPROM 512KBIT 10MHZ 8LAP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 512Kb (64K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 10MHz
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TDFN
  • Supplier Device Package: 8-LAP (5x8)
패키지: 8-TDFN
재고7,312
EEPROM
EEPROM
512Kb (64K x 8)
SPI
10MHz
10ms
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-TDFN
8-LAP (5x8)
AT25640-10PC-1.8
Microchip Technology

IC EEPROM 64KBIT 3MHZ 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 3MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
패키지: 8-DIP (0.300", 7.62mm)
재고2,272
EEPROM
EEPROM
64Kb (8K x 8)
SPI
3MHz
5ms
-
1.8 V ~ 3.6 V
0°C ~ 70°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
DS1265Y-70IND+
Maxim Integrated

IC NVSRAM 8MBIT 70NS 36EDIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 8Mb (1M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 36-DIP Module (0.600", 15.24mm)
  • Supplier Device Package: 36-EDIP
패키지: 36-DIP Module (0.600", 15.24mm)
재고6,720
NVSRAM
NVSRAM (Non-Volatile SRAM)
8Mb (1M x 8)
Parallel
-
70ns
70ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Through Hole
36-DIP Module (0.600", 15.24mm)
36-EDIP
MT53B384M32D2NP-062 AAT:B TR
Micron Technology Inc.

IC SDRAM 12GBIT 1.6GHZ FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 12Gb (384M x 32)
  • Memory Interface: -
  • Clock Frequency: 1600MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,552
DRAM
SDRAM - Mobile LPDDR4
12Gb (384M x 32)
-
1600MHz
-
-
1.1V
-40°C ~ 105°C (TA)
-
-
-
CY7C1061G18-15ZXIT
Cypress Semiconductor Corp

IC SRAM 16MBIT 15NS 48TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 15ns
  • Voltage - Supply: 1.65 V ~ 2.2 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
패키지: 48-TFSOP (0.724", 18.40mm Width)
재고4,048
SRAM
SRAM - Asynchronous
16Mb (1M x 16)
Parallel
-
15ns
15ns
1.65 V ~ 2.2 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
IS42S83200G-7BL-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 143MHZ 54BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 256Mb (32M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 143MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TFBGA
  • Supplier Device Package: 54-TFBGA (8x8)
패키지: 54-TFBGA
재고7,536
DRAM
SDRAM
256Mb (32M x 8)
Parallel
143MHz
-
5.4ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
54-TFBGA
54-TFBGA (8x8)
SST39VF3201-70-4I-B3KE-T
Microchip Technology

IC FLASH 32MBIT 70NS 48TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 32Mb (2M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10µs
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-TFBGA
패키지: 48-TFBGA
재고6,912
FLASH
FLASH
32Mb (2M x 16)
Parallel
-
10µs
70ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFBGA
48-TFBGA
IS62WV2568BLL-55TLI-TR
ISSI, Integrated Silicon Solution Inc

IC SRAM 2MBIT 55NS 32TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 2Mb (256K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 2.5 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 32-TSOP I
패키지: 32-TFSOP (0.724", 18.40mm Width)
재고2,352
SRAM
SRAM - Asynchronous
2Mb (256K x 8)
Parallel
-
55ns
55ns
2.5 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
32-TFSOP (0.724", 18.40mm Width)
32-TSOP I
AT25DN512C-SSHFGP-B
Adesto Technologies

IC FLASH 512KBIT 85MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 512Kb (64K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 104MHz
  • Write Cycle Time - Word, Page: 8µs, 1.75ms
  • Access Time: -
  • Voltage - Supply: 2.3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고3,920
FLASH
FLASH
512Kb (64K x 8)
SPI
104MHz
8µs, 1.75ms
-
2.3 V ~ 3.6 V
-40°C ~ 85°C (TC)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
GT28F320B3BA100
Intel

IC FLASH 32MBIT 100NS 48UBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - Boot Block
  • Memory Size: 32Mb (2M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFBGA
  • Supplier Device Package: 48-µBGA CSP
패키지: 48-VFBGA
재고4,048
FLASH
FLASH - Boot Block
32Mb (2M x 16)
Parallel
-
100ns
100ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-VFBGA
48-µBGA CSP
hot 24C00-I/SN
Microchip Technology

IC EEPROM 128BIT 400KHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 128b (16 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 4ms
  • Access Time: 3500ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고16,380
EEPROM
EEPROM
128b (16 x 8)
I2C
400kHz
4ms
3500ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MX25R1635FBDIH0
Macronix

IC FLASH 16MBIT

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,064
-
-
-
-
-
-
-
-
-
-
-
-
AT28HC256E-12JU-T
Microchip Technology

IC EEPROM 256K PARALLEL 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 120ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
패키지: 32-LCC (J-Lead)
재고3,456
EEPROM
EEPROM
256Kb (32K x 8)
Parallel
-
10ms
120ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC
hot MT41K512M16HA-107G:A
Micron Technology Inc.

IC DRAM 8G PARALLEL 933MHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 8Gb (512M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 933MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 20ns
  • Voltage - Supply: 1.283 V ~ 1.45 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-FBGA (14x9)
패키지: 96-TFBGA
재고6,608
DRAM
SDRAM - DDR3L
8Gb (512M x 16)
Parallel
933MHz
-
20ns
1.283 V ~ 1.45 V
0°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-FBGA (14x9)
MT29F64G08AEEDBJ4-12:D
Micron Technology Inc.

IC FLASH 64G PARALLEL 83MHZ

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 64Gb (8G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 83MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,920
FLASH
FLASH - NAND
64Gb (8G x 8)
Parallel
83MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
47C16T-E/SN16KVAO
Microchip Technology

16K 5.0V EERAM 125C AUTO

  • Memory Type: Non-Volatile
  • Memory Format: EERAM
  • Technology: EEPROM, SRAM
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: I²C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 1ms
  • Access Time: -
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고6,784
EERAM
EEPROM, SRAM
16Kb (2K x 8)
I²C
1MHz
1ms
-
4.5V ~ 5.5V
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
W631GU6NB-15-TR
Winbond Electronics

IC DRAM 1GBIT PAR 96VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 1Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 667 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.283V ~ 1.45V, 1.425V ~ 1.575V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-VFBGA
  • Supplier Device Package: 96-VFBGA (7.5x13)
패키지: -
Request a Quote
DRAM
SDRAM - DDR3L
1Gbit
Parallel
667 MHz
15ns
20 ns
1.283V ~ 1.45V, 1.425V ~ 1.575V
0°C ~ 95°C (TC)
Surface Mount
96-VFBGA
96-VFBGA (7.5x13)
IS37SML01G1-MLI-TY
ISSI, Integrated Silicon Solution Inc

IC FLASH 1GBIT SPI 104MHZ 16SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 1Gbit
  • Memory Interface: SPI
  • Clock Frequency: 104 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 8 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
패키지: -
Request a Quote
FLASH
FLASH - NAND (SLC)
1Gbit
SPI
104 MHz
-
8 ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
SM662PEB-BEST
Silicon Motion, Inc.

IC FLASH 256GBIT EMMC 100BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (TLC)
  • Memory Size: 256Gbit
  • Memory Interface: eMMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 100-LBGA
  • Supplier Device Package: 100-BGA (14x18)
패키지: -
Request a Quote
FLASH
FLASH - NAND (TLC)
256Gbit
eMMC
-
-
-
-
-40°C ~ 85°C
Surface Mount
100-LBGA
100-BGA (14x18)
BY25Q128ASFIG-T
BYTe Semiconductor

128 MBIT, 3.0V (2.7V TO 3.6V), -

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 128Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 108 MHz
  • Write Cycle Time - Word, Page: 50µs, 2.4ms
  • Access Time: 7 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOP
패키지: -
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FLASH
FLASH - NOR (SLC)
128Mbit
SPI - Quad I/O
108 MHz
50µs, 2.4ms
7 ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOP
25CS640-E-SN
Microchip Technology

IC MEMORY EEPROM 64MB SPI

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
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